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Conference on Silicon Photonics ii

作者： Castracane, James Tokranova, Natalya Song, Da SUNY Albany Coll Nanoscale Sci & Engn Albany NY 12203 USA

ISBN: (纸本)9780819465900

Among the major challenges confronting the current initiatives to incorporate optical interconnect capabilities for chip to chip I/O is to define, develop and implement the necessary components required for a complete pipeline from source to receiver. For next generation integrated circuits, the need for multi-functionality and multidimensional integration has resulted in new demands on interface technology to yield massively parallel data and clock lines. At this point, such methods are primarily limited to static reflectors, filters and gratings for interface and optical routing. One of the crucial elements is to develop a high performance and flexible optical network to transform an incoming optical pulse train into a widely distributed set of optical signals whose direction, alignment and power can be independently controlled. This coupling can be achieved using several methods including active (primarily, MEMS-based) beam steering arrays. For chip to chip applications, the overwhelming majority of the recent research and development effort has been focused on source and detector technologies, but less attention has been devoted to flexible, reconfigurable beam steering modalities. A variety of approaches for such beam steering and distribution of both timing and data lines has been examined. This paper will present an overview of active, silicon components under development at the College of Nanoscale Science and engineering for array-based I/O management with an emphasis on reconfigurable diffractive devices and adjustable, porous silicon-based components which combine optical beam steering, filtering and focusing capabilities. design details along with initial performance data from prototype components will be presented.

关键词： porous silicon MOEMS optical interconnect WDM

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Polarization dependent proximity effects

Polarization dependent proximity effects

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Conference on optical Microlithography XX

作者： Tyminski, Jacek. K. Matsuyama, Tomoyuki Nakashima, Tashiharu Schmoeller, Thomas Lewellen, John Nikon Precis Inc 1399 Shoreway Rd Belmont CA 94002 USA Synopsys Inc D-81737 Munich Germany Nikon Inc Kumagaya Saitama 3608559 Japan Synopsys Inc Mountain View CA 94043 USA

ISBN: (纸本)9780819466396

To meet the imaging resolution requirements, driven by the evolution of IC design rules, leading-edge scanners incorporate projection lenses with hyper-NAs. Moreover, immersion scanners are being introduced into IC manufacture. Both dry and immersion tools explore the lens design regimes of unprecedented complexity. The need to predict, to analyze and to control the IC pattern CDs is met by various photolithography simulators. The continuing demand for simulation accuracy is reflected by the requirement to quantify the scanner projection lens fingerprints, i.e. projection lens infinitesimal excursions from the ideal performance. The scanner engineering community has been relying on photolithography simulators to analyze the impact of the projection lens fingerprints on the imaging characteristics. However small, these excursions are always present in the projection tools and they control important imaging characteristics such as overlay, CD uniformity, across-field exposure latitude, to name but a few. Customarily, phase front aberrations and lens pupil apodization signatures have been used to predict the scanners imaging responses. Of course, the need to design, to manufacture and to deploy scanners of ever improving quality resulted in dramatic reductions of these non-ideal imaging excursions. The evolution of IC designs and imaging tools complexity escalate the requirements for imaging simulation accuracy. Simultaneously, predicting scanner imaging response has become a key mission in the Deign For Manufacture arena. In view of these developments, it necessary to pose a question if the conventional equipment engineering and imaging simulation methodologies predict scanner imaging responses with the accuracy required by the IC design rules. Differently put, the question is: what is necessary to provide simulation accuracy required by the current IC design rules? This report attempts to address these questions.

关键词： projection lens model vectorization wavefront aberrations optical proximity effects

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Micro- and Opto-Electronic Materials and Structures: Physics, Mechanics, design, Reliability, Packaging 2007

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2007年

作者： Ephraim Suhir Y.C. Lee C.P. Wong

ISBN: (数字)9780387329895

ISBN: (纸本)9780387279749

Micro- and Opto-Electronic Materials and Structures: Physics, Mechanics, design, Reliability, Packaging is the first comprehensive reference to collect and present the most, up-to-date, in-depth, practical and easy-to-use information on the physics, mechanics, reliability and packaging of micro- and opto-electronic materials, assemblies, structures and systems. The chapters in these two volumes contain summaries of the state-of-the-art and present new information on recently developed important methods or devices. Furthermore, practical recommendations are offered on how to successfully apply current knowledge and recently developed technology to design, manufacture and operate viable, reliable and cost-effective electronic components or photonic devices. The emphasis is on the science and engineering of electronic and photonic packaging, on physical design problems, challenges and solutions. Volume I focuses on physics and mechanics of micro- and opto-electronic structures and systems, i.e., on the science underpinnings of engineering methods and approaches used in microelectronics and photonics. Volume ii deals with various practical aspects of reliability and packaging of micro- and opto-electronic systems. Internationally recognized experts and world leaders in particular areas of this branch of applied science and engineering contributed to the book. Topics addressed in the book include, but are not limited to, the following: physics and mechanics of polymer materials; underfills; electrically conductive adhesives; plastic packages of IC devices; lead free solders; flip-chip packages; portable electronics; wirebond interconnects and metallurgical interconnections for harsh environments; reliability and stress testing and accelerated life testing; solder joint materials and technologies as well as lead-free solder materials and joints; reliability of mobile electronic products, photonic materials, optical fibers and active and passive optical components; thermal

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Corrugatedr QWIP developments for tactical infrared imaging

Corrugatedr QWIP developments for tactical infrared imaging

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Infrared Systems and Photoelectronic Technology ii

作者： Forrai, David P. Choi, Kwong-Kit Devitt, John W. L-3 Communications Cincinnati Electronics 7500 Innovation Way Mason OH 45040 United States U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi MD 20783

ISBN: (纸本)9780819468086

The corrugated quantum well infrared detector (C-QWIP) offers improvements to quantum efficiency and spectral bandwidth compared to current commercial QWIPs. In addition to improved performance, the C-QWIP also uses manufacturing processes that are mature and low cost. Thus, very large format focal plane arrays (FPAs) can be fabricated with high yield. There are two applications where the C-QWIP can provide cost effective solutions. The first is very large format long-wave infrared (LWIR) sensors. Most very large format FPAs operate in the mid-wave infrared (MWIR). The MWIR band has significantly lower flux than LWIR, therefore in situations where the backgrounds are cold or there is potential motion blur, the LWIR C-QWIP offers better performance. The second application is two-color registered high-resolution wide area imagery. ARL and CE have been developing both C-QWIP detectors and read-out integrated circuits to support these needs. This paper describes the progress we've made in developing high conversion efficiency LWIR C-QWIP FPAs and MWIR/LWIR two-color FPAs and our path forward to multi-megapixel C-QWIP FPAs and sensors.

关键词： Infrared imaging

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Proceedings of SPIE - Zinc Oxide Materials and Devices ii

Proceedings of SPIE - Zinc Oxide Materials and Devices II

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Zinc Oxide Materials and Devices ii

ISBN: (纸本)0819465879

The proceedings contain 34 papers. The topics discussed include: new developments in ZnO materials and devices, analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation;metalorganic vapor phase epitaxy of ZNO: towards p-type conductivity, characterization of Ag doped p-type ZnO films;current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures;electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering;thin film of ZnO and its relation to substrate properties;p-type nitrogen- and phosphorous-doped thin films grown by pulsed deposition on sapphire substrates;formation of two-dimensional electron gas and enhancement of electron mobility by Zn polar ZnMgO/ZnO heterostructure;and etching of ZnO toward the development of ZnO homostructure LEDs.

关键词： Zinc oxide

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Investigation of current-voltage characteristics of n-GaN/i-Al xGa1-xN/n-GaN structures

Investigation of current-voltage characteristics of n-GaN/i-...

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Gallium Nitride Materials and Devices ii

作者： Ni, X. Xie, J. Fu, Y. Morkoç, H. Steinke, I.P. Liu, Y. Ruden, P.P. Son, K.-A. Yang, B. Dept. of Electrical Engineering Virginia Commonwealth University Richmond VA 23284 Dept. of Electrical and Computer Engineering University of Minnesota Minneapolis MN 55455 Jet Propulsion Laboratory Pasadena CA 91109

ISBN: (纸本)0819465860

Although standard GaN device structures used for FETs, light emitters, and detectors have been investigated extensively, device structures relying on the particulars of current transport over barriers in this material system have not received as much attention, to a large extent due to the insufficient quality of the layers. Unless special measures are taken, the defects present in the barrier material induce current conduction paths that preclude any possibility of observing the fundamental current conduction mechanisms. To overcome this impediment, high quality GaN layers, followed by vertical single barrier heterostructures, have been grown on sapphire substrates using epitaxial lateral overgrowth in a metal organic chemical vapor deposition system. With these templates, n-GaN/i-AlxGa1-xN/n-GaN structures with varying barrier width and height have been prepared and tested for their I-V characteristics. The rectification behavior observed is consistent with the barrier design. Since the energy bands are affected by polarization charge, which can be influenced by pressure, I-V measurements under hydrostatic pressure have also been recorded. In this presentation, the details of the measurements and analyses, as well as the pertinent aspects of growth related issues will be discussed.

关键词： Gallium nitride

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A design of real time image capturing and processing system using Texas instrument's processor

A design of real time image capturing and processing system ...

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Multimedia Systems and Applications X

作者： Wee, Toon-Joo Chaisorn, Lekha Rahardja, Susanto Gan, Woon-Seng Institute for Infocomm Research Singapore 119613 Singapore School of EEE Nanyang Technology University Singapore 639798 Singapore

ISBN: (纸本)9780819469373

In this work, we developed and implemented an image capturing and processing system that equipped with capability of capturing images from an input video in real time. The input video can be a video from a PC, video camcorder or DVD player. We developed two modes of operation in the system. In the first mode, an input image from the PC is processed on the processing board (development platform with a digital signal processor) and is displayed on the PC. In the second mode, current captured image from the video camcorder (or from DVD player) is processed on the board but is displayed on the LCD monitor. The major difference between our system and other existing conventional systems is that image-processing functions are performed on the board instead of the PC (so that the functions can be used for further developments on the board). The user can control the operations of the board through the Graphic User Interface (GUI) provided on the PC. In order to have a smooth image data transfer between the PC and the board, we employed Real Time Data Transfer (RTDX™) technology to create a link between them. For image processing functions, we developed three main groups of function: (1) Point Processing;(2) Filtering and;(3) 'Others'. Point Processing includes rotation, negation and mirroring. Filter category provides median, adaptive, smooth and sharpen filtering in the time domain. In 'Others' category, auto-contrast adjustment, edge detection, segmentation and sepia color are provided, these functions either add effect on the image or enhance the image. We have developed and implemented our system using C/C# programming language on TMS320DM642 (or DM642) board from Texas Instruments (TI). The system was showcased in College of engineering (CoE) exhibition 2006 at Nanyang Technological University (NTU) and have more than 40 users tried our system. It is demonstrated that our system is adequate for real time image capturing. Our system can be used or applied for application

关键词： Real time systems

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Wireless pressure sensor using laser targeting of silicon carbide

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optical engineering 2007年第1期46卷 014401-1-014401页

作者： Riza, Nabeel A. Ghauri, Farzan Perez, Frank Nuonics Inc Winter Pk FL 32792 USA Univ Cent Florida Coll Opt CREOL Orlando FL 32816 USA

To the best of our knowledge, proposed is the first extreme-environment wireless pressure sensor design using a remoted single-crystal SiC chip within a pressurized capsule. A detailed theoretical analysis of the sensor system is performed, including the SiC chip's mechanical response within the pressure capsule and the pressure measurement technique's optical response based on image demagnification. The remote sensor was experimentally tested at room temperature for pressures up to 41 atm, and the sensor response is consistent with the theoretical analysis. The demonstrated sensor has a current experimental resolution of 1.17 atm with a designed maximum pressure range of 140 atm. Improved sensing resolution and range can be achieved via optimal selection of the SiC chip's dimensions and its seating in the pressure capsule. Applications for this sensor include extreme environments involving hot gases and corrosive fluids, as in power generation systems, oil field operations, and aerospace systems. (c) 2007 Society of Photo-optical Instrumentation Engineers.

关键词： optical sensors pressure sensor extreme environments

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Proceedings of SPIE - current developments in Lens design and optical engineering Vii

Proceedings of SPIE - Current Developments in Lens Design an...

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current developments in Lens design and optical engineering Vii

ISBN: (纸本)0819463671

The proceedings contain 34 papers. The topics discussed include: fundamental and specific steps in Shack-Hartmann wavefront sensor design;a hardware-based simulation platform for optical design and engineering;low profile optic for mobile camera using dual freedom reflective lenses;end-to-end compensation of digital-optical imaging system;optical design for the adaptive secondary setup and instrument stimulator (ASSIST);actual field curvature and isoquals;self-weight distortion of lens elements;influence of striae on the homogeneity of the linear thermal expansion coefficient of ZERODUR;sedimentations on high precision surfaces of advanced materials by magnetorheological finishing;automatic birefringence characterization of single-mode erbium-doped fibers within the amplification band;stabilization of the line of sight of a cryogenic optical system;and design of a thermal imaging diagnostic using 90-degree off-axis parabolic mirrors.

关键词： optical design

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Balancing detector effects with aberrations in the design of wide-field grazing incidence x-ray telescopes

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optical engineering 2006年第6期45卷 063003-1-063003页

作者： Harvey, James E. Atanassova, Martina Krywonos, Andrey Univ Cent Florida CREOL Orlando FL 32826 USA

Most imaging systems today include a mosaic detector array in the focal plane. optical designers of astronomical telescopes typically produce a design that yields a superb on-axis aerial image in the focal plane, and detector effects are included only in the analysis of the final system performance. Aplanatic optical designs (corrected for spherical aberration and coma) are widely considered to be superior to nonaplanatic designs. However, there is little merit in an aplanatic design for wide-field applications because one needs to optimize some field-weighted-average measure of resolution over the desired operational field of view (OFOV). Furthermore, when used with a mosaic detector array in the focal plane, detector effects eliminate the advantage of the aplanatic design even at small field angles. For wide fields of view, the focal plane is frequently despaced to balance field curvature with defocus thus obtaining better overall performance. We will demonstrate that including detector effects in the optical design process results in a different optimal (nonaplanatic) design for each OFOV that is even superior to an optimally despaced aplanatic design. (c) 2006 Society of Photo-optical Instrumentation Engineers.

关键词： detector effects wide-field imaging systems grazing incidence x-ray telescopes

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