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current developments in optical design and optical engineering iii

The proceedings contains 44 papers. Some of the specific topics discussed are: multiple-temperature lens design optimization;engineering an agile beam director for laser radar;beam design of a noncooperative interfero... 详细信息

ISBN: (纸本)081941249X

关键词： optical systems

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Proceedings of SPIE: current developments in Lens design and optical engineering iii

Proceedings of SPIE: Current Developments in Lens Design and...

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current developments in Lens design and optical engineering iii

This Volume 4767 of the conference proceedings contains 19 papers. Topics discussed include optical system, optical sensors, optical materials, optical design and optical devices.

关键词： optical engineering

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Wireless Devices for optical Brain Stimulation: A Review of current developments for Optogenetic Applications in Freely Moving Mice

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CELLULAR AND MOLECULAR BIOengineering 2025年第1期18卷 1-13页

作者： Silva, Patricia Jacinto, Luis Fac Med Univ Porto FMUP Dept Biomed Expt Biol Unit P-4200319 Porto Portugal

PurposeOptogenetics is an invaluable tool to study brain circuits, but typical systems rely on tethered approaches to deliver light to the brain that hinder natural behavior. With the increasing prevalence of complex behavioral phenotyping in neuroscience experiments, wireless devices for optical stimulation offer great promise to overcome these *** this work we critically review recent systems engineering and device design approaches to deliver light to the brain with wireless operation for optogenetic *** describe strategies used for wireless control and communication, wireless power transfer, and light delivery to the brain with a focus on device integration for in vivo operation in freely behaving *** advances in optoelectronic systems, material science, and microtechnology have enabled the design and realization of miniaturized wirelessly-controlled optical stimulators for true untethered experiments in rodent models.

关键词： Optogenetics Wireless devices Optoelectronics Rodent behavior Neural modulation

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Flexible mechano-optical sensors from mechanoluminescence to mechanoplasmonics: designs, applications, and prospects

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JOURNAL OF MATERIALS CHEMISTRY C 2025年第5期13卷 2058-2090页

作者： Tao, Wei Xue, Yufeng Hu, Qinhua Yin, Ling Liu, Ye Maurer, Thomas Fleischer, Monika Dongguan Univ Technol DGUT CNAM Inst Dongguan 523106 Peoples R China Univ Technol Troyes Lab Light Nanomat & Nanotechnol L2n CNRS UMR 7076 F-10004 Troyes France Eberhard Karls Univ Tubingen Inst Appl Phys D-72076 Tubingen Germany Eberhard Karls Univ Tubingen Ctr LISA D-72076 Tubingen Germany Dongguan Univ Technol Sch Elect Engn & Intelligentizat Dongguan 523106 Peoples R China Univ Lille Sci Cite Cent Lille F-59000 Lille France

Flexible mechano-optical sensors (FMOS) achieve quantitative sensing of mechanical stimuli by monitoring changes in optical response, and due to the incorporation of a polymeric matrix/substrate, they exhibit high flexibility, elasticity, and biocompatibility. This wireless and visualized sensing capability offers potential for both in situ and in vivo applications. In this review, we delve into the mechanisms and developments of two types of FMOS: "active" mechanoluminescence (ML) and "passive" mechanoplasmonics (MP). The focus is on how ML particles and polymers can be combined in various configurations (such as bulk, laminar, and woven blending systems) to yield robust, multifunctional, and hybrid optical/electrical properties, exploring their potentials in engineering, information, and wearable/implantable applications. Additionally, the tunability of ML intensity and emission color under mechanical and various environmental stimuli is summarized, leading to a discussion on the versatile MP nanostructures. With their sophisticated artificial design, MP demonstrates promise for both small-scale sensing and high-level control over spectral wavelength and intensity. Lastly, based on current research on ML and MP, challenges and prospects for combining these two technologies to advance the field of FMOS are proposed.

关键词： optical sensors

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Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers

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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2025年第2期31卷

作者： Crump, Paul Boni, Anisuzzaman Elattar, Mohamed Khamari, S. K. Marko, Igor P. Sweeney, Stephen J. Arslan, Seval King, Ben Miah, Md. Jarez Martin, Dominik Knigge, Andrea Casa, Pietro Della Traenkle, Guenther Ferdinand Braun Inst FBH D-12489 Berlin Germany Univ Glasgow Glasgow City G12 8QQ Scotland FBH Berlin D-12489 Berlin Germany RRCAT Indore 452013 India Univ Glasgow Glasgow City G12 8LT Scotland

current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900 & mldr;1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90 & mldr;100 mu m wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 mu m stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 degrees C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. Overall, whilst operating efficiency and power continue to scale rapidly, a technological path for increased specific power and peak efficiency is also emerging.

关键词： optical resonators Semiconductor lasers Power generation Diode lasers Power lasers optical reflection Epitaxial layers Stimulated emission Reflectivity Power conversion Quantum well lasers power conversion

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Subcell-Resolved EQE Method Using Reverse Voltage Biasing for Multijunction Photovoltaics With Overlapping Subcell Absorptance

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PROGRESS IN PHOTOVOLTAICS 2025年

作者： Beattie, Meghan N. Schachtner, Michael Siefer, Gerald Lackner, David Hoehn, Oliver Hinzer, Karin Helmers, Henning Fraunhofer Inst Solar Energy Syst ISE Freiburg Germany Univ Ottawa Sch Elect Engn & Comp Sci SUNLAB Ottawa ON Canada

External quantum efficiency (EQE) measurements of individual subcells in multijunction photovoltaic devices are essential to evaluate current matching and to iterate the design process. The standard light biasing technique used to measure subcell EQE falls short when multiple subcells absorb within the same spectral region. In this work, we demonstrate a three-step reverse voltage biasing EQE method, which measures any number of subcells with overlapping absorptance: (1) A light bias is applied to generate current mismatch between the subcells. (2) current-voltage (I-V) characteristics are measured into reverse bias, where the limiting subcell enters reverse-bias breakdown and the device current climbs to a plateau at the photocurrent of the next limiting subcell, producing a staircase I-V curve. (3) Each subcell EQE curve is measured using a voltage bias within its current plateau. We demonstrate this approach for a two-junction GaAs-based photonic power converter, comparing to the standard light biasing method and revealing better than 0.8% absolute agreement when the top junction is preferentially biased in the reverse voltage biasing method. We demonstrate the viability of the method by measuring the EQE of all subcells in a six-junction GaAs-based photonic power converter.

关键词： external quantum efficiency iii-V semiconductors laser power converter luminescence coupling multijunction optical power transmission photonic power converter power by light spectral responsivity

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Recent advances and perspective in Boron Carbon Nitride and Boron Nitride based materials for photocatalytic energy and environmental applications

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JOURNAL OF WATER PROCESS engineering 2025年 70卷

作者： Sharma, Pankaj Kumar, Amit Dhiman, Pooja Sharma, Gaurav Wang, Tongtong Garcia-Penas, Alberto Lai, Chin Wei Shoolini Univ Int Res Ctr Nanotechnol Himalayan Sustainabil IRCN Bajhol India Xian Univ Architecture & Technol Interdisciplinary & Innovate Res Xian 710055 Peoples R China UPES Sch Hlth Sci & Technol Dept Allied Sci Dehra Dun 248007 India Univ Carlos III Madrid Dept Ciencia & Ingn Mat & Ingn Quim IAAB Leganes 28911 Spain Univ Malaya UM Inst Adv Studies IAS Nanotechnol & Catalysis Res Ctr NANOCAT Kuala Lumpur 50603 Malaysia

There has been an increase in interest with advanced photocatalytic materials due to the increasing importance of sustainable energy solutions and environmental remediation. BCN and BN-based materials have gained significant attention recently for their impressive electronic structures, exceptional chemical stability and interesting optical properties. This article provides a comprehensive analysis of the latest developments in BCN and BN-based photocatalysts. It delves into their structural design, synthesis methods and efforts to enhance their performance in energy conversion and pollutant degradation. In this analysis, we delve into the factors that enhance the photocatalytic activity of these materials like doping with heteroatoms and the engineering of interfaces in heterojunction systems. In addition, we offer an evaluative viewpoint on potential future directions, such as the creation of versatile BCN and BN composites designed specifically for CO2 reduction, hydrogen evolution and environmental decontamination. This analysis seeks to offer a thorough examination of these cutting-edge materials, providing valuable insights into their potential for addressing pulling global energy and environmental issues.

关键词： Keywords Boron carbon nitride Boron nitride Photocatalysis Water treatment Energy conversion

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Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for Silicon Photonics 29

Addressing the oxide-aperture dependency of the degradation ...

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Vertical-Cavity Surface-Emitting Lasers XXIX 2025

作者： Buffolo, Matteo Zenari, Michele De Santi, Carlo Rossi, Francesca Lazzarini, Laura Roelkens, Gunther Larsson, Anders Grabowski, Alexander Gustavsson, Johan Meneghesso, Gaudenzio Zanoni, Enrico Meneghini, Matteo University of Padova Department of Information Engineering Padua35131 Italy IMEM CNR Parma Parco Area delle Scienze 37/A Parma43124 Italy Photonics Research Group Ghent University-imec Gent9052 Belgium Photonics Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology GöteborgSE-412 96 Sweden University of Padova Department of Physics and Astronomy Padua35131 Italy

ISBN: (数字)9781510685178

ISBN: (纸本)9781510685161

Discrete NIR iii-As VCSELs have been used for a long time in the datacom industry. Recently, the integration of such devices onto SiN substrates was successfully achieved by means of micro-transfer printing techniques, thus allowing the use of these devices as the laser sources of next generation PICs for silicon photonics applications. Despite the maturity of modern iii-V epitaxy, previous reports investigating the reliability of these so-called vertical-cavity silicon-integrated lasers (VCSILs) identified the stress-induced relocation of point defects as the main cause for the electrical and optical degradation exhibited by the LDs during accelerated ageing. In this work, we further analyze these processes by evaluating through EL imaging, TEM, numerical modeling and simulations, the variation in the properties of iii-V bottom-emitting VCSELs based on the very same epitaxy and structure. The results indicate that i) the adopted aging procedure does not cause the formation of extended defects in proximity of the oxide aperture, ii) that the observed spreading in the optical beam of the laser is strongly correlated with the increase in series resistance, iii) that the electrical degradation is stronger for smaller oxide apertures, due to the more pronounced crowding of injected current occurring at the top DBR, which determines the overall series resistance of the device. These results further confirm our previous findings and help identify guidelines for the design of reliable VCSELs for future SiPh applications. © 2025 SPIE.

关键词： Silicon photonics

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design strategies for electrochromic displays

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Journal of the Korean Ceramic Society 2025年 1-36页

作者： Shin, Dongbin Lee, Jeongseo Pyo, Hoon Lee, Sihyun Kang, Hyunmook Kim, Hyojung Moon, Cheon Woo Department of Display Materials Engineering Soonchunhyang University Asan31538 Korea Republic of Department of Semiconductor Systems Engineering Sejong University Seoul05006 Korea Republic of

Non-emissive displays that harness ambient light are one of the cornerstones in the area of visually representing the desired object. Among the materials used, therein, electrochromic (EC) materials have shown their great potential, due to their low power consumption, wide-viewing angle, and excellent bistability. These features lead to ease of daily applications like IoT, where traditional famous displays such as LCD and LED cannot easily be adopted. Moreover, EC material-based pixels can dynamically represent RGB colors and contrast within a single pixel, which significantly differentiates them from traditional emissive devices. Displays based on EC materials demand complicated requirements, for example, the design of optically efficient nanostructures, the development of energetically efficient electrochemical systems, and the design of optimized device architectures. However, as these individual aspects and inter-effects are not yet fully understood, a comprehensive understanding of the electrical, chemical, and optical interactions is crucial for advancing device design. In this review paper, an overview of the current developments in non-emissive display technology based on EC materials is provided, and the principles necessary for designing efficient EC display devices are outlined for efficient EC device design. © The Korean Ceramic Society 2025.

关键词： Pixels

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developments toward monolithic iii-N microLEDs: red InGaN active region and tunnel junctions grown by MOCVD 29

Developments toward monolithic III-N microLEDs: red InGaN ac...

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Light-Emitting Devices, Materials, and Applications XXIX 2025

作者： Wong, Matthew S. Tak, Tanay Quevedo, Alejandro Li, Panpan Smith, Jordan M. Ewing, Jacob J. Rienzi, Vincent Nakamura, Shuji Speck, James S. DenBaars, Steven P. Materials Department University of California Santa BarbaraCA93106 United States Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States

ISBN: (纸本)9781510685208

As the display technology is expanding rapidly into wearable and near-eye displays, different novel approaches are being developed to enable the emerging display applications. iii-nitride microLEDs have been considered as a potential solution that reveals the possibility of high-resolution displays with ultrahigh brightness and outstanding operating lifespan. Among different methods to realize full-color microLED displays, monolithic microLEDs offer advantages in mass transfer, device fabrication, and integration processes. The monolithic microLED approach takes advantage of the wavelength tunability within the visible spectrum covering red, green, and blue (RGB) emission by controlling the indium incorporation in the active region. The concept of monolithic InGaN RGB LEDs have been demonstrated in the literature, but the electrical efficiency is low because of the inefficient injection efficiency in long-wavelength active region and the voltage penalty from tunnel junctions (TJs). For the long-wavelength active region, the method is to intentionally control the v-defect formation by opening and filling up the v-defects by growth conditions. The use of v-defect engineering in the active region has shown to promote injection efficiency especially in the green and red LEDs. On the other hand, a fabrication method is discussed that results in low voltage penalty by enhancing the efficacy of sidewall activation of the TJs in microLEDs. The two methods present in this work will enhance the electrical efficiency in the long-wavelength active region and the TJ performance that can be applied in the monolithic LED design. © 2025 SPIE.

关键词： Light emitting diodes

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