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current scenario in ternary metal indium sulfides-based heterojunctions for photocatalytic energy and environmental applications: A review

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MATERIALS TODAY COMMUNICATIONS 2023年 36卷

作者： Sharma, Pankaj Kumar, Amit Zheng, Gege Mashifana, Tebogo Dhiman, Pooja Sharma, Gaurav Stadler, Florian J. Shoolini Univ Int Res Ctr Nanotechnol Himalayan Sustainabil IRCN Solan 173229 India Shenzhen Univ Coll Mat Sci & Engn Guangdong Res Ctr Interfacial Engn Funct Mat Shenzhen Key Lab Polymer Sci & Technol Shenzhen 518055 Peoples R China Univ Johannesburg Dept Chem Engn POB 17011 ZA-2088 Johannesburg South Africa

The mounting pressure of the energy crisis and environmental pollution has led to unprecedented developments in designing new age materials with superior properties for solar and visible light energy conversion. In light of this, semiconductor photocatalysts have been recognized the most preferred materials for the generation of clean energy and advanced water treatment. With strong visible light absorption, tuneable band width, low toxicity, excellent stability, and a longer lifetime of excited charge-carriers, indium sulphide and ternary metal indium sulphides (MISs) have high potential for applicability in fields of photocatalytic water detoxification, hydrogen evolution, and energy production. To harness the advantages to the fullest and address the inherent drawbacks, numerous metal indium sulphides, nanocomposites, and heterojunctions have been developed in addition to optical and defect engineering and hybridization. In this review, various synthetic routes for improved photo-catalytic performance are discussed, followed by discussions on Z-scheme, S-scheme, and p-n heterojunctions of metal indium sulfides. The most recent advances in the design and utilisation of metal indium sulfide-based heterostructures for photocatalytic applications in environmental contaminants degradation and energy con-version are then summarised. Lastly, some future prospective and future recommendations for photocatalytic activity are discussed. Finally, the challenges, outlook, and research directions for designing superior next-generation MISs-based photocatalysts are discussed.

关键词： Metal indium sulfide Photocatalysis Heterojunctions Water treatment H2 generation

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Promising New Horizons in Medicine: Medical Advancements with Nanocomposite Manufacturing via 3D Printing

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POLYMERS 2023年第20期15卷 4122-4122页

作者： Li, Nan Khan, Sadaf Bashir Chen, Shenggui Aiyiti, Wurikaixi Zhou, Jianping Lu, Bingheng Xinjiang Univ Sch Mech Engn Urumqi 830017 Peoples R China Southwest Univ Sci & Technol Sch Mfg Sci & Engn Key Lab Testing Technol Mfg Proc Minist Educ Mianyang 621010 Peoples R China Dongguan Univ Technol Sch Educ Normal Sch Dongguan 523808 Peoples R China Guangzhou Panyu Polytech Sch Art & Design Guangzhou 511483 Peoples R China

Three-dimensional printing technology has fundamentally revolutionized the product development processes in several industries. Three-dimensional printing enables the creation of tailored prostheses and other medical equipment, anatomical models for surgical planning and training, and even innovative means of directly giving drugs to patients. Polymers and their composites have found broad usage in the healthcare business due to their many beneficial properties. As a result, the application of 3D printing technology in the medical area has transformed the design and manufacturing of medical devices and prosthetics. Polymers and their composites have become attractive materials in this industry because of their unique mechanical, thermal, electrical, and optical qualities. This review article presents a comprehensive analysis of the current state-of-the-art applications of polymer and its composites in the medical field using 3D printing technology. It covers the latest research developments in the design and manufacturing of patient-specific medical devices, prostheses, and anatomical models for surgical planning and training. The article also discusses the use of 3D printing technology for drug delivery systems (DDS) and tissue engineering. Various 3D printing techniques, such as stereolithography, fused deposition modeling (FDM), and selective laser sintering (SLS), are reviewed, along with their benefits and drawbacks. Legal and regulatory issues related to the use of 3D printing technology in the medical field are also addressed. The article concludes with an outlook on the future potential of polymer and its composites in 3D printing technology for the medical field. The research findings indicate that 3D printing technology has enormous potential to revolutionize the development and manufacture of medical devices, leading to improved patient outcomes and better healthcare services.

关键词： tissue engineering nanocomposite drug delivery systems (DDS) medicine 3D printing stereolithography fused deposition modeling (FDM)

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A 56 GHz InP VCO for Use in 112 GBaud (112 GBit/s NRZ or 224 GBit/s PAM-4) InP Integrated optical Receiver Front-End CDR Block

A 56 GHz InP VCO for Use in 112 GBaud (112 GBit/s NRZ or 224...

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Canadian Conference on Electrical and Computer engineering (CCECE)

作者： Shakeeb Abdullah John W. M. Rogers Wenyu Zhou Rony E. Amaya Department of Electronics (DOE) Carleton University Ottawa ON Canada

This paper presents the design of a 56 GHz voltage-controlled oscillator (VCO) designed in an Indium Phosphide (InP) 0.8 µm kit. InP (iii-V) semiconductor technology was chosen since the fastest photodiodes that currently exists on the market (for use with 112 GBaud) make use of InP PIN diodes. The goal is to integrate everything in one die and one technology of InP (including the PIN diode, front-end transimpedance amplifier (TIA), and CDR blocks with the VCO); for this reason InP was used and to assess if such a VCO can be designed for use in 112 GBit/s NRZ (or 224 GBit/s PAM-4) receiving CDR units. The 56 GHz VCO can either be used directly in a half-rate CDR or be used in a full rate 112 GBaud CDR using a frequency doubler circuit. Post-layout electro-magnetic simulations of the VCO had a tuning range of 55 GHz - 58 GHz. The small tuning range is due to the fact that there were no varactors in the InP kit, hence makeshift HBTs with their limited tuning capacitances were used as the core varactors. The VCO used 11.1 mA of current (including periphery circuitry: buffers & current mirrors) from a 3.3 V supply; for a total power consumption of 36.6 mW. The output signal had a phase noise of -98 dBc/Hz at 10 MHz offset (which is comparable to similar InP works). The VCO design used a -gm cross coupled pair that can provide differential oscillation to recover the clock signal from a differential data input. The core size of the VCO (meant to be used as part of a CDR unit) required only 113 µm × 94 µm of layout space.

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Improve the performance of 2μm GaSb-based high-power lasers by reducing the thermal effect of series resistance 16

Improve the performance of 2μm GaSb-based high-power lasers...

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16th National Conference on Laser Technology and Optoelectronics

作者： Chen, Yihang Zhang, Yi Yang, Cheng'ao Shang, Jinming Wang, Tianfang Wang, Haiteng Xu, Yingqiang Zhang, Yu Niu, Zhichuan State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China CRRC YANGTZE CO. LTD China

ISBN: (数字)9781510646643

ISBN: (纸本)9781510646636

The resistivity of each layer constituting a 2μm GaSb-based laser is measured with Van der Pauw method. The operation temperature of GaTe doping source is optimized for lower resistivity. The series resistance contribution of each layer is calculated. A new laser structure is designed, 65% of the optical field distributes in quantum wells and waveguide layers while the series resistance is reduced to 0.28ω.The laser with new design is fabricated, 0.89W continuous output power at room temperature can be achieved at a current of 3A with voltage of 1.40V. The slope efficiency of the emitter is 0.32W/A, and almost no slope efficiency is observed in the process of increasing current until 2.6A. © 2021 SPIE.

关键词： iii-V semiconductors

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发光铱(Ⅲ)配合物抗肿瘤活性研究及应用

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化学进展 2022年第9期34卷 1957-1971页

作者：顾顺心姜琴施鹏飞江苏海洋大学环境与化学工程学院连云港222005

铱(Ⅲ)配合物因其发光量子产率高且波长易调控、发光寿命长和光稳定性好的特点,在发光材料领域备受关注。铱(Ⅲ)配合物细胞渗透能力强,能靶向多种细胞组织并影响其结构和功能,表现出独特的抗肿瘤活性,是目前金属抗肿瘤药物特别是PDT光... 详细信息

铱(Ⅲ)配合物因其发光量子产率高且波长易调控、发光寿命长和光稳定性好的特点,在发光材料领域备受关注。铱(Ⅲ)配合物细胞渗透能力强,能靶向多种细胞组织并影响其结构和功能,表现出独特的抗肿瘤活性,是目前金属抗肿瘤药物特别是PDT光敏剂方向的研究热点。本文重点关注铱(Ⅲ)配合物的结构对其发光性能与抗肿瘤性能的影响,综述了近期铱(Ⅲ)配合物在生物成像、探针与传感、抗肿瘤诊疗等领域的研究进展,并对目前研究中存在的问题及其应用前景进行探讨和展望。

关键词：铱(Ⅲ)配合物结构-功能调控发光材料抗肿瘤

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Smartphone-assisted personalized diagnostic devices and wearable sensors

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current OPINION IN BIOMEDICAL engineering 2020年 13卷 42-50页

作者： Purohit, Buddhadev Kumar, Ashutosh Mahato, Kuldeep Chandra, Pranjal Indian Inst Technol Guwahati Dept Biosci & Bioengn Lab Biophysio Sensors & Nanobioengn Gauhati 781039 India

Personalized point-of-care (POC) devices offer an easy access for health monitoring without using sophisticated instruments. Recently, miniaturized biosensors are being widely used as POC devices because of their reliable, sensitive, and fast detection of biomolecules with portable features. The recent advances in the camera and processor of smartphones are being eagerly integrated with biosensing applications, and this can be a big boost for health-care diagnoses owing to their wider presence all over the world. In this review, we have discussed most recent developments of portable diagnostic devices and wearable sensors based on the combined features of smartphones and biosensors for POC applications. optical, electrochemical, and wearable biosensors are discussed in detail, and their sensing mechanism using smartphones has been illustrated. To put perceptive insights into the importance of smartphone-based POC devices and wearable sensing devices, recent examples have been described including the sensor design, transduction mechanism, and smartphone integration.

关键词： Biosensor optical biosensor Electrochemical biosensor Wearable biosensor Point of care Smartphone

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Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

arXiv

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arXiv 2023年

作者： Li, Xintong Zhou, Peng Hu, Xuan Rivers, Ethan Watanabe, Kenji Taniguchi, Takashi Akinwande, Deji Friedman, Joseph S. Incorvia, Jean Anne C. Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Dallas RichardsonTX75080-3021 United States Research Center for Electronic and Optical Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan

Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 108and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits. © 2023, CC BY.

关键词： Logic gates

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显微集成术中光学相干断层血流造影术

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中国激光 2022年第15期49卷 119-126页

作者：张子艺俞晨阳乔依琳沈丽君程丹李鹏浙江大学光电科学与工程学院浙江杭州310027 浙江大学嘉兴研究院智能光电创新中心浙江嘉兴324000 温州医科大学附属眼视光医院杭州院区眼底病专科浙江杭州310020

提出一种集成手术显微镜的术中光学相干血流造影系统(iOCTA)来实现术中眼底视网膜血流灌注的动态监测。通过光学相干断层扫描血管造影(OCTA)系统的光路与商用手术显微镜的助手镜的成像光路耦合,实现显微镜-OCTA的系统集成,这种简捷的耦... 详细信息

提出一种集成手术显微镜的术中光学相干血流造影系统(iOCTA)来实现术中眼底视网膜血流灌注的动态监测。通过光学相干断层扫描血管造影(OCTA)系统的光路与商用手术显微镜的助手镜的成像光路耦合,实现显微镜-OCTA的系统集成,这种简捷的耦合方式便于现有手术显微镜的功能升级。采用基于逆信噪比和去相关的光学相干血流运动造影(ID-OCTA)算法,实现高信噪比的眼底微血管成像。利用该系统实现了活体兔眼的术中眼底血流灌注成像,揭示了血流灌注随眼内压的时空动态演变过程,发现急性高眼内压(60 mmHg;1 mmHg=133.32 Pa)将导致血流灌注密度值在短时间内降低至基线值的20%以下。所研制的iOCTA系统有望实现眼科手术中眼底血流灌注的实时监测,有助于外科医生客观评价手术过程和预测术后效果。

关键词：医用光学生物医学成像光学相干层析成像光学相干血流造影术中成像

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Inverse designed flat optics with multilevel diffractive lenses 11

Inverse designed flat optics with multilevel diffractive len...

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Conference on current developments in Lens design and optical engineering XXI

作者： Banerji, Sourangsu Meem, Monjurul Majumder, Apratim Garcia, Juan C. Hon, Philip Pies, Christian Oberbiermann, Timo Menon, Rajesh Rodriguez, Berardi Sensale Univ Utah Elect & Comp Engn Salt Lake City UT 84102 USA Northrop Grumman Corp NG Next Redondo Beach CA 90278 USA Heidelberg Instruments Mikrotech Heidelberg Germany Oblate Opt Inc San Diego CA 92130 USA

ISBN: (数字)9781510637719

ISBN: (纸本)9781510637719

In conventional imaging, the information transfer from the object to the image plane is accomplished either with the help of a traditional lens that performs a one-to-one mapping or an unconventional lens that performs a one-to-many mapping. In the first case, the image is formed directly, whereas in the second case, the image is formed after a computation. The conventional lens approach is preferred in most cases due to the high signal-to-noise ratio achievable at each image pixel. By appealing to the fact that for most of the imaging applications, it is only the intensity, which is measured by the detector, the phase of the field in the image or focal plane is a free parameter, something that comes from the inverse diffraction transform. Therefore, it is easy to visualize that this phase of the plane wave after it transmits the lens can have multiple forms. Hence, the final choice can be made based upon specific application tailored requirements like achromaticity, depth-of-focus, wide-angle imaging, etc. This concept was exploited to design an achromatic MDL via inverse design across almost the entire electromagnetic spectrum (lambda = 450 nm to 15 mu m). Furthermore, a MDL with a Field Of View (FOV) up to 50 degrees for wide-angle imaging as well as a MDL to enable an extreme Depth of Focus (EDOF) imaging of up to 6 m in the NIR were also designed.

关键词： Inverse design Diffractive lens Imaging

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Measuring the device-level EQE of multi-junction photonic power converters

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PROGRESS IN PHOTOVOLTAICS 2024年第11期32卷 827-836页

作者： Schachtner, Michael Beattie, Meghan N. Reichmuth, S. Kasimir Wekkeli, Alexander Siefer, Gerald Helmers, Henning Fraunhofer Inst Solar Energy Syst ISE Freiburg Germany Univ Ottawa Sch Elect Engn & Comp Sci SUNLAB Ottawa ON Canada Univ Freiburg Dept Sustainable Syst Engn INATECH Lab Photovolta Energy Convers Freiburg Germany

Multi-junction photonic power converters (PPCs) are photovoltaic cells used in photonic power transmission systems that convert monochromatic light to electricity at enhanced output voltages. The junctions of a multi-junction PPC have overlapping spectral responsivity, which poses a unique challenge for spectrally resolved external quantum efficiency (EQE) measurements. In this work, we present a novel EQE measurement technique based on a wavelength-tunable laser system and characterize the differential multi-junction device-level EQE (dEQEMJ) as a function of the monochromatic irradiance over seven orders of magnitude. The irradiance-dependent measurements reveal three distinct irradiance regimes with different dEQEMJ. For the experimentally studied 2-junction GaAs-based device, at medium irradiance with photocurrent densities between 0.3 and 90 mA/cm2, dEQEMJ is independent of irradiance and follows the expected EQE of the current-limiting subcell across all wavelengths. At higher irradiance, nonlinear device response is observed and attributed to luminescent coupling between the subcells. At lower irradiances, namely, in the range of conventional EQE measurement systems, nonlinear effects appear, which mimic luminescent coupling behavior but are instead attributed to finite shunt resistance artifacts that artificially inflate dEQEMJ. The results demonstrate the importance of measuring the device-level dEQEMJ in the relevant irradiance regime. We propose that device-level measurements in the finite shunt artifact regime at low monochromatic irradiance should be avoided. Multi-junction photonic power converters convert monochromatic light to electricity with enhanced output voltages. In the paper, we introduce the new measurement method of irradiance-dependent device-level EQE (differential multi-junction device-level EQE [dEQEMJ]) by applying a tunable laser. Using a dual-junction GaAs device as an example, we demonstrate the dEQEMJ over a wide irradiance range an

关键词： external quantum efficiency iii-V semiconductors laser power converter luminescence coupling multi-junction nonlinearity optical power transmission photonic power converter power by light spectral responsivity

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