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Novel In-Plane Semiconductor Lasers XXIV 2025

作者： Skipper, Alec M. Feng, Kaiyin Koscica, Rosalyn Shang, Chen Bowers, John E. Institute for Energy Efficiency University of California Santa Barbara Santa BarbaraCA93106 United States Department of Electrical and Computer Engineering University of California Santa Barbara Santa BarbaraCA93106 United States Materials Department University of California Santa Barbara Santa BarbaraCA93106 United States

ISBN: (纸本)9781510685185

Growing iii-V O-band lasers directly on patterned silicon photonics wafers has the potential to decrease the cost and increase the manufacturing throughput of integrated photonics chips needed for applications in data communications. However, this process introduces new challenges in materials growth and device design that are not present in current hybrid and heterogeneous integration techniques. In this work, we address the challenges associated with iii-V growth on patterned silicon and present integrated O-band quantum dot lasers grown directly on 300 mm silicon photonics wafers. © 2025 SPIE.

关键词： Quantum dot lasers

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Options for cost and performance improvements and integrated emitter design in GaN based electro-optical devices 29

Options for cost and performance improvements and integrated...

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Light-Emitting Devices, Materials, and Applications XXIX 2025

作者： Nähle, L. Gerhard, S. Somers, A. Jama, M.G. Lawrowski, R. Borovac, D. Eichler, C. Brüderl, G. Tautz, S. Heidemann, M. Reiger, E. Gosain, S. Jentzsch, B. Haimerl, M. Heine, U. Wurm, T. Malm, N. von Behringer, M. Mu, X. Sacher, W.D. ams-OSRAM International GmbH Leibnizstr. 4 Regensburg93055 Germany Max Planck Institute of Microstructure Physics Weinberg 2 Halle06120 Germany

ISBN: (纸本)9781510685208

While InGaN based lasers in the blue and green wavelength range have developed into well-established light sources over the last two decades, there is of course a constant drive to raise performance, lower price and enable new device designs. This publication discusses options for laser designs involving etched planes and facets that can drastically reduce production costs and at the same time offer opportunities for new device concepts. It also presents our newest results on high-power lasers in the blue wavelength range. First, InGaN lasers produced with etched facets are compared to state-of-the-art edge emitters. Tilt-angles and on-wafer mirror layer roughness are identified as the main contributors to the existing performance gap, mainly manifesting itself in a ~10 mA threshold current difference for devices with 400 µm resonator length. Following this, the application of the technology of smooth m-plane etching for the fabrication of nano-fins is demonstrated and an application example of a laser with etched facets in a photonic integrated circuit (PIC) is shown. In the second part of the paper, we describe the main improvements that our blue high-power InGaN chips experienced through epi and chip design optimization. Power conversion efficiencies (PCE) of 50% and above have been reached and a multi-die-package comprising several blue power lasers is demonstrated. © 2025 SPIE.

关键词： iii-V semiconductors

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Metasurfaces in optical Biosensing: Revolutionizing Detection Techniques and Shaping the Future

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Photonics 2025年第4期12卷 360-360页

作者： Kumar, Sunil Singh, Harbinder Singh, Dhiraj Kumar Department of Electrical Electronics and Communication Engineering Galgotias University Uttar Pradesh Greater Noida201308 India Galgotias University Uttar Pradesh Greater Noida201308 India Department of Electronics and Communication Engineering UCRD Chandigarh University Punjab Mohali140413 India Amity School of Engineering and Technology Amity University Haryana Amity Education ValleyManesarHaryana Gurugram122413 India

Metasurfaces have been widely investigated across the disciplines of optical biosensing due to their exceptional ability to manipulate electromagnetic fields. Consequently, over the past few years, there has been growing interest in the application of metasurfaces in optical biosensors in the field of biomedical sensing. While being label-free and offering real-time tracking, high sensitivity, and a quick response are among the benefits of conventional optical biosensors, the incorporation of metasurfaces improves their wavefront manipulation, selectivity for versatile sensing, and capacity for device miniaturization to satisfy increasingly complex application requirements. Furthermore, there is a lack of comprehensive evaluations that address the current research developments and future possibilities, despite the encouraging advancements in this emerging field. Hence, this work provides a comprehensive review and serves as a valuable resource for researchers exploring metasurface-based optical biosensors. This review delves into defining the basic sensing concepts, design procedures, and important figures of merit (FOM) for metasurface-based optical biosensors and their applications, including the detection of numerous analytes, such as viruses, toxins, antibodies, tumors, and drugs and the monitoring of blood sugar. Furthermore, presenting a critical evaluation of structural fabrication techniques with a view toward potential future commercialization, this review ends by highlighting several fascinating areas for further investigation. For this review article, a total of 5844 effective documents about metasurface optical biosensors were retrieved from the Scopus database. The VOSviewer version 1.6.20 bibliometric software was used for the scientific analysis of the data retrieved from the Scopus database from 2010 to 2025. © 2025 by the authors.

关键词： metasurfaces biosensing figure of merit limit of detection photolithography sensitivity

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Next-generation 80x nm high-power diode lasers: recent progress for single- and multi-bar packages 23

Next-generation 80x nm high-power diode lasers: recent progr...

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High-Power Diode Laser Technology XXiii 2025

作者： Kaaden, Tobias Meusel, Jens Zorn, Martin Pietrzak, Agnieszka Werner, Ekkehard Schroeder, Matthias Huelsewede, Ralf Stier, Martin Salge, Martin Doerfel, Falk Heidecke, Thomas Palinginis, Phedon JENOPTIK Optical Systems GmbH Goeschwitzer Str. 25 Jena07743 Germany JENOPTIK Optical Systems GmbH Max-Plank-Str. 25 Berlin12489 Germany

ISBN: (纸本)9781510684386

We report on recent developments to increase optical output power and reliability of 80x nm high-power diode lasers, significantly exceeding the performance of JENOPTIK’s current 80x nm diode laser generation. The increase in optical output power is mainly achieved via utilization of in-house laser bars with improved chip design. Employing JENOPTIK’s double-side cooled open heat sink designs and its related packaging technology allows for reliable operation of single-bar packages up to 120 W optical output power in continuous-wave (cw) operation. For hard-soldered multi-bar packages a novel solder deposition technology has been tested in combination with improved 80x nm broad-area laser bar designs demonstrating pulse peak power levels beyond ~ 400 W per bar in long-pulse (lp) mode operation, i.e. pulse durations up to 10 ms and duty cycles on the order of 10%. These promising results spur future developments in the field of optical pumping as well as direct diode laser applications. © 2025 SPIE.

关键词： optical pumping

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25 years of current developments in lens design and optical engineering: a review 25

25 years of current developments in lens design and optical ...

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Conference on current developments in Lens design and optical engineering XXV

作者： Thibault, Simon Univ Laval COPL Quebec City PQ Canada

ISBN: (纸本)9781510679221;9781510679238

These days, nothing lasts very long, and things often change for the better, but there are sure things in our community, such as this annual event, which has been going on for 25 years. The first edition in 2000 of the current developments in Lens design and optical Systems engineering Conference took place during International Symposium on optical science and technology, 30 July - 4 August 2000 in San Diego. Over 45 oral presentations and ten posters were presented. The chairs were Robert E. Fischer, Warren J. Smith, R. Barry Johnson, and William H. Swantner. The proceeding was numbered 4093 and 24 years later the number is 12666 (2023). This paper looks back on the great moments of our conference, its speakers, the subjects that have come and gone, and those that have remained.

关键词： History lens design optical engineering aberration instrumentation assembly testing metrology

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current developments in optical engineering iii

Current Developments in Optical Engineering III

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current developments in optical engineering iii 1988

The proceedings contain 39 papers. The topics discussed include: diffraction effects of secondary mirror spiders upon telescope image quality;a high efficiency diffraction grating design for a rhomb configuration;apodized apertures for infrared and visible high-power lasers;optical performance of a waveguide grating imaging device;improved optical resolution that exceeds the diffraction limit;roughness study of aluminum-coated surfaces by infrared ellipsometry;a vapor leak sensor using polarization property for plant inspection;practical aspects in the implementation of symbolic substitution logic;study of the theory of optical stabilizing image;and active phase compensation system for fiber optic holography.

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Performance scaling of high-power diode laser pumps for fusion applications 8

Performance scaling of high-power diode laser pumps for fusi...

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High Power Lasers for Fusion Research Viii 2025

作者： Crump, P. Fenwick, W.E. Berlin12489 Germany 7000 East Ave. LivermoreCA94550 United States

ISBN: (纸本)9781510684348

The development, test and deployment of inertial fusion energy facilities depend critically on the economic supply of diode laser pumps. Efforts from innovation in automation to yield and volume scaling in semiconductor production and the development of ultra-low-cost packaging technologies are essential to lower purchase cost in Euros/dollars per Watt. It is equally important to substantially increase reliable output powers and conversion efficiency of the semiconductor devices, via continuous improvement in iii-V technology. We therefore summarize current developments in industry and research in the performance scaling of diode pumps for fusion application. First, we show how efficient 1-cm diode bars with 1000 W output power are migrating from the laboratory towards mass production, enabled by design improvement and techniques such as high-throughput passivation. Next, we summarize recent research, that shows a path to scaling 1-cm bars toward multi-kilowatt powers, whilst efforts in defect elimination promise increased fabrication yield and longer lifetimes. © 2025 SPIE.

关键词： optical pumping

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current developments in lens design and optical engineering II

Current developments in lens design and optical engineering ...

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current developments in Lens design and optical engineering II

The proceedings contained 20 papers from the journal on current developments in Lens design and optical engineering. The topics discussed included: optics for binocular telescopes;enhancements to the optimization proc... 详细信息

关键词： optical engineering

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Proceedings of SPIE: current developments in Lens design and optical engineering IV

Proceedings of SPIE: Current Developments in Lens Design and...

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current developments in Lens design and optical engineering IV

The proceedings contains 15 papers from the Proceedings of SPIE: current developments in Lens design and optical engineering IV. Topics discussed include: Zernike polynomials and aberration balancing;optical design for imaging spectroscopy;integral optical system design of injection molded optics;structured design method for automotive lamp reflectors;optical systems for free-space laser communications;and current status and future direction of sensors in Earth observing satellites.

关键词： optical systems

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Highly reliable, multi-watt continuous wave GaSb-based broad area diode lasers emitting around 2 µm 23

Highly reliable, multi-watt continuous wave GaSb-based broad...

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High-Power Diode Laser Technology XXiii 2025

作者： Boni, A. Wegelin, M. Fahrentz, F. Kaebe, A. Lumics GmbH Schwarze-Pumpe-Weg 16 Berlin12681 Germany

ISBN: (纸本)9781510684386

We have developed multi-watt continuous wave laser diodes based on the InGaSb/GaSb material system, emitting at an operating wavelength of 1.94 µm for a wide range of medical/life science and industrial applications. High conversion efficiency, multi-watt output power, efficient fiber coupling, and extended lifetime are the primary requirements for these applications. The vertical design is epitaxially grown by molecular beam epitaxy (MBE), consisting of InGaSb multi quantum wells (MQWs) with GaSb barriers. This optimized vertical design is fabricated into single emitters with a 190 µm stripe width and a 2.5 mm resonator length, and mounted p-side down on a CuW heatsink (thermal resistance = 3 K/W). The single emitter exhibits an output power of 2 W at 9.6 A with a power conversion efficiency of 23%, showing a peak power conversion efficiency of 29% at 4 A in continuous wave (CW) mode at T = 25◦ C. The slope efficiency decreases from 0.27 to 0.20 W/A as the current increases from 4 A to the peak saturation current of 9.6 A. We performed a lifetime test at the maximum power level at 23◦ C for 30 devices over 1000 hours. None of these devices showed any performance degradation due to catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD). © 2025 SPIE.

关键词： iii-V semiconductors

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