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Extending fault-based testing to microelectromechanical systems

JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS 2000年第3期16卷 279-288页

作者： Mir, S Charlot, B Courtois, B TIMA Lab F-38031 Grenoble France

As stable fabrication processes for MicroElectroMechanical Systems (MEMS) emerge, research efforts shift towards the design of systems of increasing complexity. The ways in which testing is going to be performed for large volume complex devices embedding MEMS are not known, As in the microelectronics industry, the development of cost-effective tests for larger systems may well require test stimuli targeting actual faults, developing fault lists and fault models fur realistic manufacturing defects and failure modes, and using fault simulation as a major approach fur assessing testability and dependability. In this paper, we illustrate how fault-based testing can be extended to MEMS, both for bulk and surface micromachining technologies, making possible the reuse of analog testing techniques.

关键词： MEMS defects failure modes fault modeling HDLs fault simulation nodal simulation

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Analytical modeling and simulation Studies of High Voltage Super-junction Drift layer for Power MOSFET

Analytical Modeling and Simulation Studies of High Voltage S...

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22nd International Conference on microelectronics (ICM 2010)

作者： Kondekar, Pravin N. Indian Inst Informat Technol Design & Mfg Jabalpur MP India

ISBN: (纸本)9781612841519

In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases it on resistance making it unsuitable for use. Super-junction power MOSFET (CooIMOS (TM)) claim to resolve this limitation and high voltage device up 1000V are using super junction drift layer with relatively low on resistance. In this paper an effort is made to explain in detail with the help of analytical treatment and simulation results to understand the physical mechanisms involved in improving the on resistance with high BV. An analytical modeling method is also proposed to get the design guide line for device dimensions and optimum doping levels for minimum on resistance based on Super-junction Theory.

关键词： Super-junction MOSFET VDMOS Charge imbalance Breakdown voltage Power MOSFET Charge compensation

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modeling of program Vth distribution for 3-D TLC NAND flash memory

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Science China(Information Sciences) 2019年第4期62卷 187-196页

作者： Kunliang WANG Gang DU Zhiyuan LUN Wangyong CHEN Xiaoyan LIU Institute of Microelectronics Peking University Huawei Technologies Co. Ltd.

This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and the RTN effect of tunneling oxide and poly Si, which are the major physical factors affecting the width of program Vth distribution. Then, the program Vth distribution shapes with different ISPP incremental voltage steps are compared, and the results are found to be consistent with the experimental results. Code and layer-dependent coupling coefficients of WL-WL interference in 3-D vertical channel NAND flash memory are considered. The effect of RTN on the program Vth distribution is comprehensively studied. The program Vth distribution of a WL is calibrated with the measurement, and a good agreement is obtained, validating the array program Vth distribution simulation method. The simulation method can help in improving the reliability of 3-D TLC NAND flash memory and provides guidance for the design and optimization of 3-D QLC NAND flash memory technology.

关键词： modeling and simulation measurement reliability program Vth distribution charge-trapping memory 3-D vertical channel TLC/QLC NAND flash memory

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How to Teach the Skills Needed in Writing Behavioral Models of Physical Systems?

How to Teach the Skills Needed in Writing Behavioral Models ...

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10th European Workshop on microelectronics Education (EWME)

作者： Rahkonen, Timo Aikio, Janne P. Univ Oulu Dept Elect Engn Elect Lab Oulu 90014 Finland

ISBN: (纸本)9781479940165

Electronic design relies heavily on simulation, and nowadays most of the designs start by behavioral simulations. Previously modeling has been done by people who have good understanding on heavy numerical computing, but now most designers need to write some behavioral models. In this paper we discuss how well electrical engineering students are prepared to that and what can to be done to give them sufficient skills for behavioral modeling.

关键词： Computer-aided circuit design analog integrated circuit design microelectronics circuit design

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Transmission line matrix (TLM) modeling of self-heating in power PIN diodes

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microelectronics JOURNAL 2018年第Sep.期79卷 64-69页

作者： Mimouni, S. Saidane, A. Chalabi, D. Abboun-Abid, M. ENP Oran Maurice Audin Dept Elect Engn CaSiCCE Lab BP 1523 El Mnaouer Oran Algeria

design of high-performance electronic components with stable static and dynamic characteristics requires a study of self-heating on electrical properties. TLM method is used to model electrothermal behavior of PIN diodes. simulation results show a non-uniform temperature distribution in the device. TLM simulation results are in good agreement with those obtained by DESSIS-ISE commercial simulator. TLM computational effort is only a fraction of that required by finite element methods. TLM method is useful in dealing with nonlinear problems since it is unconditionally stable. modeling and analysis results show that device self heating depends very much on material physical parameters and its geometry. In addition, it has been observed that blocking and conduction times influence heat dissipation.

关键词： PIN diode Self heating Heat diffusion TLM method simulation

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modeling and simulation of Novel GaN-based Light Emitting Transistor for Display Applications 14

Modeling and Simulation of Novel GaN-based Light Emitting Tr...

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15th International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th Conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Lee, Sang Myung Yun, Ilgu Yonsei Univ Elect & Elect Engn Seoul South Korea

ISBN: (纸本)9781538653869

For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

关键词： inorganic LET TCAD simulation and modeling device prototype implementation

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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

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microelectronics RELIABILITY 2017年第Sep.期76卷 350-356页

作者： Mukherjee, K. Darracq, F. Curutchet, A. Malbert, N. Labat, N. Univ Bordeaux CNRS IMS Lab UMR 5218 F-33405 Talence France

2D TCAD Sentaurus simulations based on Drift-Diffusion transport are performed to identify the modeling parameters that crucially affect the reliability characteristics of AlGaN/GaN HEMT devices, demonstrated by their effects on the gate leakage characteristic. The behavioural nature and impact of each parameter on the leakage performance is discussed. Schottky gate tunneling and trapping effects within the structure are two major reliability issues that modulate the leakage characteristic. Hence, their contributions are precisely modeled. A simulation methodology is presented to recognize the relative control of individual parameters on distinct regions of the leakage characteristic. This modeling approach is demonstrated for a GaN HEMT technology and can be further applied to facilitate reliability comparisons across different device technologies. This validates TCAD simulation to be an effective aiding tool in reviewing and interpreting GaN HEMT reliability performance and design choices. (C) 2017 Elsevier Ltd. All rights reserved.

关键词： GaN HEMT TCAD simulation Gate current AlGaN/GaN gate leakage Reliability Tunneling Traps

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A TCAD modeling Approach for Diamond Particle Detectors: simulation and Test 13

A TCAD Modeling Approach for Diamond Particle Detectors: Sim...

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13th Conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International Conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)

作者： Morozzi, Arianna Passeri, Daniele Univ Perugia Engn Dept Perugia Italy INFN Perugia Perugia Italy

ISBN: (纸本)9781509065080

In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is not included in the material's library of commercial TCAD simulation tools, due to the novelty of using this material in electronics. To this end the TCAD tools capabilities have been enhanced by developing an innovative numerical model for the simulations of advanced diamond devices conceived for particle detection in High-Energy Physics (HEP) experiments. This work focuses on the parameterization of the TCAD numerical model for polycrystalline diamond, on its validation against experimental data and on its application as a predictive tool for the electrical behavior of commercial polycrystalline diamond and Diamond-on-Iridium detectors.

关键词： TCAD Diamond Numerical modeling

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Temperature-aware on-chip networks

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IEEE MICRO 2006年第1期26卷 130-139页

作者： Shang, L Peh, LS Kumar, A Jha, NK Queens Univ Dept Elect & Comp Engn Kingston ON K7L 3N6 Canada Princeton Univ Dept Elect Engn Princeton NJ 08544 USA

ON-CHIP NETWORKS ARE BECOMING INCREASINGLY POPULAR AS AWAY TO CONNECT HIGH-PERFORMANCE SINGLE-CHIP COMPUTER SYSTEMS, BUT THERMAL ISSUES GREATLY LIMIT NETWORK design. THIS THERMAL modeling AND simulation FRAMEWORK COMBINES WITH A DISTRIBUTED RUNTIME SCHEME FOR THERMAL MANAGEMENT TO OFFER A PATH TO THERMALLY EFFICIENT ON-CHIP NETWORK design.

关键词： THERMAL analysis COMPUTER networks INTEGRATED circuits ELECTRONIC circuits TEMPERATURE INTERNETWORKING devices ROUTERS (Computer networks) NETWORK computers microelectronics

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modeling and simulation of a parallel plate heat sink using computational fluid dynamics

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INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY 2010年第1-4期51卷 415-419页

作者： Arularasan, R. Velraj, R. SSN Coll Engn Dept Mech Engn Madras 603110 Tamil Nadu India Anna Univ CEG Inst Energy Studies Madras 600025 Tamil Nadu India

Desktop computers have changed to accommodate increasing power, approaching 100 W. Heat dissipation becomes a significant issue in efficiency promotion and stable operation of air-cooled microelectronics and power electronics components and assemblies. Finned heat sinks are commonly used devices for enhancing heat transfer from air-cooled microelectronics and power electronics components and assemblies. The use of finned heat sinks increases the effective surface area for convective heat transfer, reducing the thermal resistance and operating temperatures in air-cooled electronics. The task of selecting the best heat sink for a particular application from the hundreds of configurations available from the various manufacturers can be a formidable task for an engineer. In a typical heat sink design, the objective is to achieve target heat dissipation, while restricting the consumption of valuable resources such as mass, fan power, pressure drop, and space claim. In this research work, preliminary studies have been carried out for the performance improvement of a parallel-plate heat sink considering the various geometric parameters, such as number of fins, fin length, fin height, and base height. The modeling and simulation of the heat sink is carried out with the computational fluid dynamics package. The results are analyzed using analysis of variance and response graphs.

关键词： Heat sink Thermal resistance design of experiments CFD solver ANOVA

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