With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable s...
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With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.
Siemens opened its microelectronicsdesign Center in Singapore in 1991 to cover research and development of digital signal processing for speech, audio, and data applications, teletext for Asian languages, and 8-bit m...
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Siemens opened its microelectronicsdesign Center in Singapore in 1991 to cover research and development of digital signal processing for speech, audio, and data applications, teletext for Asian languages, and 8-bit microcontrollers. During the past three years, the center's Packaging Technology Department has developed over 19 kinds of electronics packages. The center's fully automated packaging process integrates all steps from die attachment to molding. Its laboratories handles finite element modeling, materials characterization, and process simulation. The Packaging Department currently works closely with research institutions and consortia on emerging packaging technologies.
The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulation. We present new approaches for fast and stable simulation of etching and deposition processes ...
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The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulation. We present new approaches for fast and stable simulation of etching and deposition processes by introducing non spherical structuring element algorithms to our morphological operation based cellular topography simulator. We demonstrate improvements and accelerations for a wide variety of etching and deposition models such as isotropic deposition, uni-directional etching, lithography development simulation, sputter deposition and reactive ion etching. we also draw comparisons with the originally implemented algorithm and other approaches such as the level set method. furthermore we show a fast, physically based, and accurate three-dimensional simulation of tin sputter deposition and, by means of a two metal layer interconnect structure, we demonstrate an efficient generation of three-dimensional geometries directly including layout information and photolithography simulation.
A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tu...
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A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.
The growing importance of three-dimensional simulation has made mesh generation the key to accurate and fast solutions. Where in two dimensions many different and only moderately sophisticated methods are established ...
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The growing importance of three-dimensional simulation has made mesh generation the key to accurate and fast solutions. Where in two dimensions many different and only moderately sophisticated methods are established and feasible, there is the need in three dimensions for far more efficient strategies. Not only the amount of data and the complexity of the simulated structures pose an increasing challenge, but also the visualization of the three-dimensional grid as an important feedback for the developer becomes more difficult. Meshing has been geared more and more towards automation. Especially, in Technology Computer-Aided design (TCAD) where the input to the gridder can be the output from a topography simulator the degree of automation requires further discussion. The authors investigate the state of the art and give an overview of activities in that field.
We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. element quality improvement can be handled by local me...
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We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. element quality improvement can be handled by local mesh adaptation steps. the three-dimensional meshing algorithm is suitable for complicated structures, because of its fully unstructured nature. the resulting Delaunay mesh possesses the flexibility possible within the scope of a tetrahedral representation not like octree based or other cartesian meshes which are commonly employed in technology cad (TCAD).
An overall three-dimensional photolithography simulator is presented, which has been developed for workstation based application. The simulator consists of three modules according to the fundamental processes of photo...
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An overall three-dimensional photolithography simulator is presented, which has been developed for workstation based application. The simulator consists of three modules according to the fundamental processes of photolithography, namely imaging, exposure/bleaching and development. General illumination forms are taken into account. The nonlinear bleaching reaction of the photoresist is considered and electromagnetic light-scattering due to a nonplanar topography is treated by solving repeatedly the maxwell equations within an inhomogeneous medium. A novel extension of the two-dimensional differential method into the third dimension is presented and a numerically efficient implementation for exposure simulation under partial coherent illumination is described. the development process is simulated with a cellular based surface advancement algorithm.
To accurately simulate modern semiconductor process steps, a simulation tool must include a variety of physical models and numerical methods. Increasingly complex physical formulations are required to account for effe...
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To accurately simulate modern semiconductor process steps, a simulation tool must include a variety of physical models and numerical methods. Increasingly complex physical formulations are required to account for effects that were not important in simulating previous generations of technology. Thus flexibility in definition of models as well as numerical solving methods is highly desirable. An object-oriented approach has been applied to implementing a dimension independent solver which uses an analytical input interface in the manner of Math-Cad, Mathematica, Matlab but highly optimized for numerical calculations of partial differential equations for complex simulation domains. It is equipped with a numerical solver, that supports direct and iterative solution methods, as well as an adaptive hierarchical grid adaptation algorithm which can be controlled by the analytical input language. To show the abilities of AMIGOS several examples in different dimensions are demonstrated.
The concept of partial automated design optimization and the improvement of a micropump as a first application is described. Starting with a parametrizable simulation model the parameter values are modified with evolu...
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The concept of partial automated design optimization and the improvement of a micropump as a first application is described. Starting with a parametrizable simulation model the parameter values are modified with evolutionary algorithms until the simulation results which describe the behaviour of the system satisfy the defined goals. As the quality of the optimization depends strongly on the quality of the simulation model we give an outlook on a concept for improving the simulation model or components of this model by using FEM-simulation results.
A programmable simulation environment for semiconductor technology analysis is presented. The SIESTA project sets out to combine the advantages of a comfortable, intuitive visual user interface with the flexibility an...
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A programmable simulation environment for semiconductor technology analysis is presented. The SIESTA project sets out to combine the advantages of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language. It is designed to provide a set of framework services to ensure a straight-forward definition of complex technology analysis tasks. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. LISP objects are used to represent basic entities like process steps, process flows, experiments, and agents for design of experiments (DoE), response surface modeling (RSM), and optimization and fitting modules.
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