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检索条件"任意字段=Design, Modeling, and Simulation in Microelectronics"

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Integrated Circuit design. Power and Timing modeling, Optimization and simulation 1

引用

丛书名： Lecture Notes in Computer Science

1000年

作者： Bertrand Hochet Antonio J. Acosta Manuel J. Bellido

ISBN: (数字)9783540457169

ISBN: (纸本)9783540441434

The International Workshop on Power and Timing modeling, Optimization, and simulation PATMOS 2002, was the 12th in a series of international workshops 1 previously held in several places in Europe. PATMOS has over the years evolved into a well-established and outstanding series of open European events on power and timing aspects of integrated circuit design. The increased interest, espe- ally in low-power design, has added further momentum to the interest in this workshop. Despite its growth, the workshop can still be considered as a very - cused conference, featuring high-level scienti?c presentations together with open discussions in a free and easy environment. This year, the workshop has been opened to both regular papers and poster presentations. The increasing number of worldwide high-quality submissions is a measure of the global interest of the international scienti?c community in the topics covered by PATMOS. The objective of this workshop is to provide a forum to discuss and inves- gate the emerging problems in the design methodologies and CAD-tools for the new generation of IC technologies. A major emphasis of the technical program is on speed and low-power aspects with particular regard to modeling, char- terization, design, and architectures. The technical program of PATMOS 2002 included nine sessions dedicated to most important and current topics on power and timing modeling, optimization, and simulation. The three invited talks try to give a global overview of the issues in low-power and/or high-performance circuit design.

关键词： Circuits and Systems Mathematical and Computational Engineering Mathematics of Computing Computer Hardware Processor Architectures System Performance and Evaluation

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simulation elektrischer Schaltungen auf dem Rechner 1

引用

丛书名： Fachberichte simulation

1000年

作者： E.-H. Horneber

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simulation of Semiconductor Processes and Devices 2007 1

引用

1000年

作者： Tibor Grasser Siegfried Selberherr

ISBN: (数字)9783211728611

ISBN: (纸本)9783211728604;9783709119112

The "Twelfth International Conference on simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

关键词： Electronics and microelectronics, Instrumentation Optical and Electronic Materials Nanotechnology Computational Intelligence simulation and modeling

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Analysis and simulation of Heterostructure Devices 1

引用

丛书名： Computational microelectronics

1000年

作者： Vassil Palankovski Rüdiger Quay

ISBN: (数字)9783709105603

ISBN: (纸本)9783211405376;9783709171936

Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.

关键词： Electronics and microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering simulation and modeling

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System Verilog Assertions and Functional Coverage 3

引用

1000年

作者： Ashok B. Mehta

ISBN: (数字)9783030247379

ISBN: (纸本)9783030247362;9783030247393

This book provides a hands-on, application-oriented guide to the language and methodology of both SystemVerilog Assertions and Functional Coverage. Readers will benefit from the step-by-step approach to learning language and methodology nuances of both SystemVerilog Assertions and Functional Coverage, which will enable them to uncover hidden and hard to find bugs, point directly to the source of the bug, provide for a clean and easy way to model complex timing checks and objectively answer the question ‘have we functionally verified everything’. Written by a professional end-user of ASIC/SoC/CPU and FPGA design and Verification, this book explains each concept with easy to understand examples, simulation logs and applications derived from real projects. Readers will be empowered to tackle the modeling of complex checkers for functional verification and exhaustive coverage models for functional coverage, thereby drastically reducing their time to design, debug and cover.;· Explains each concept in a step-by-step fashion and applies it to a practical real life example;

关键词： Circuits and Systems Electronics and microelectronics, Instrumentation Processor Architectures

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simulation of Semiconductor Devices and Processes 1

引用

1000年

作者： Siegfried Selberherr Hannes Stippel Ernst Strasser

ISBN: (数字)9783709166574

ISBN: (纸本)9783211825044;9783709173725

The "Fifth International Conference on simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

关键词： Computer Engineering Electronics and microelectronics, Instrumentation simulation and modeling Computer-Aided Engineering (CAD, CAE) and design

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Technology CAD Systems 1

引用

1000年

作者： Franz Fasching Stefan Halama Siegfried Selberherr

ISBN: (数字)9783709193150

ISBN: (纸本)9783709193174

As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.

关键词： Computer-Aided Engineering (CAD, CAE) and design Electronics and microelectronics, Instrumentation simulation and modeling

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simulation of Semiconductor Devices and Processes 1

引用

1000年

作者： Heiner Ryssel Peter Pichler

ISBN: (数字)9783709166192

ISBN: (纸本)9783211827369;9783709173633

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

关键词： simulation and modeling Electronics and microelectronics, Instrumentation Computer-Aided Engineering (CAD, CAE) and design

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Integrated Circuit and System design. Power and Timing modeling, Optimization and simulation 1

引用

丛书名： Lecture Notes in Computer Science

1000年

作者： Enrico Macii Vassilis Paliouras Odysseas Koufopavlou

ISBN: (数字)9783540302056

ISBN: (纸本)9783540230953

WelcometotheproceedingsofPATMOS2004,thefourteenthinaseriesofint- national workshops. PATMOS 2004 was organized by the University of Patras with technical co-sponsorship from the IEEE Circuits and Systems Society. Over the years, the PATMOS meeting has evolved into an important - ropean event, where industry and academia meet to discuss power and timing aspects in modern integrated circuit and system design. PATMOS provides a forum for researchers to discuss and investigate the emerging challenges in - sign methodologies and tools required to develop the upcoming generations of integrated circuits and systems. We realized this vision this year by providing a technical program that contained state-of-the-art technical contributions, a keynote speech, three invited talks and two embedded tutorials. The technical program focused on timing, performance and power consumption, as well as architectural aspects, with particular emphasis on modelling, design, charac- rization, analysis and optimization in the nanometer era. This year a record 152 contributions were received to be considered for p- sible presentation at PATMOS. Despite the choice for an intense three-day m- ting, only 51 lecture papers and 34 poster papers could be accommodated in the single-track technical program. The Technical Program Committee, with the - sistance of additional expert reviewers, selected the 85 papers to be presented at PATMOS and organized them into 13 technical sessions. As was the case with the PATMOS workshops, the review process was anonymous, full papers were required, and several reviews were received per manuscript.

关键词： Electronics and microelectronics, Instrumentation Theory of Computation Logic design Performance and Reliability Processor Architectures Arithmetic and Logic Structures

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Microtransducer CAD 1

引用

丛书名： Computational microelectronics

1000年

作者： Arokia Nathan Henry Baltes

ISBN: (数字)9783709164280

ISBN: (纸本)9783709173213

Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing "parasitic” effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. The book is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry.

关键词： Electronics and microelectronics, Instrumentation Nanotechnology Optical and Electronic Materials simulation and modeling Numerical Analysis

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