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Electronics and Electrical Engineering Technology (EEET), International Conference on

作者： Xinhuan Yang Mingyan Yu Xingyu Fang Liang Wang Chuanzheng Wang Yuanfu Zhao School of Electronic Information Hangzhou Dianzi University Hangzhou China Beijing Microelectronics Technology Institute Beijing Chinia

ISBN: (数字)9798350395594

ISBN: (纸本)9798350395600

The evaluation of MOSFET reliability requires aging model, which based on time-consuming and costly aging test. In order to reduce the costs of aging test, the parameters of trap (TP) and two-stage (TS) degradation models in TCAD framework were calibrated according to the data of aging test in this paper. Then the impact of parameters on the number of interface trap during degradation in PMOS were studied by using the two models. The results show that the calibrated model can basically replace the aging test and evaluate the lifetime of device. Finally, this paper proposed a decoupling method of hot carrier injection (HCI) and negative bias temperature instability (NBTI) by studying the relationship between the two effects and channel length. The purpose of this paper is to analyze the characteristic of aging effect through TCAD simulation and obtain the data establishing aging model. It provides convenience to the design of high-reliability device.

关键词： Degradation Negative bias temperature instability Semiconductor device modeling Costs Thermal variables control Voltage Aging

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An adaptive simulation framework for AMS-RF test quality

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INTEGRATION-THE VLSI JOURNAL 2020年 73卷 10-17页

作者： Gutierrez, Valentin Leger, Gildas Univ Seville Inst Microlectron Sevilla CSIC Av Amer Vespucio 28 Seville 41092 Spain

Ensuring the quality of a circuit implies ensuring the quality of test. Despite the fact that performance-based testing has been the golden standard for Analog, Mixed-Signal and RF test for decades, high-reliability markets like automotive have found that functional test leaves some potential defects undetected that can produce infield failure. There is thus a push towards defect-oriented testing which, in turn, calls for an efficient defect simulation framework. This paper presents a statistical adaptive defect simulation based on likelihood-weighted random sampling to evaluate the quality of AMS-RF tests in terms of defect coverage and fault escape. The adaptive loop takes a decision at each new defect simulation on whether it is more efficient to assess the defect coverage or the fault escape rate of the test under evaluation, as a function of the desired targets for these two metrics. Several decision criteria are proposed and validated by simulation of a complete IC for different tests.

关键词： AMS-RF test Defect simulation Test evaluation Fault escape Defect coverage

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Mechanical simulation and modeling for reliability of 6-in-1 power module

Mechanical simulation and modeling for reliability of 6-in-1...

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Electronic Components and Technology Conference (ECTC)

作者： Rathin Mandal Kazunori Yamamoto Gongyue Tang Institute of Microelectronics A*STAR (Agency for Science Technology and Research) Singapore

numerical modeling and simulation of temperature cycling test (TCT) and power cycling test (PCT) are applied to the design reliability analysis for a proposed 6-in-1 power module (PM) package. The fatigue life for both 95Sn5Sb solder interconnect and sintered Ag die attach (DA) joints under TCT and PCT conditions are calculated and compared with a reference power module package which has already passed the reliability test. The Coffin-mansion life model ductility factor is calculated from the test data for the reference power module and applied to the analysis of the fatigue life for the PM. The reliability of solder interconnect is in the same level as the reference module which passed the 1000 cycles of TCT and 50000 cycles of PCT. Sintered Ag DA joint has a very high reliability life. The structural reliability of interconnect for the proposed PM could be further enhanced by using sintered Ag as both DA and interconnect materials. Effect of package parameters such as DA and copper clip thickness are also investigated in this study. The results provided important guidelines for the PM package design.

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design and simulation of Millimeter-Wave Magnetrons 3

Design and Simulation of Millimeter-Wave Magnetrons

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3rd IEEE Ukraine Conference on Electrical and Computer Engineering, UKRCON 2021

作者： Kopot, Mykhailo Kobzev, Igor Chetverykov, Grigorij Gritsunov, Alexander Bilotserkivska, Anzhela Kharkiv National University of Radio Electronics Department of Software Engineering Kharkiv Ukraine V.N.Karazin Kharkiv National University Department of Information Technologies and Control System Kharkiv Ukraine Kharkiv National University of Radio Electronics Department of Microelectronics Electronic Devices and Appliances Kharkiv Ukraine

ISBN: (纸本)9781665400947

Specific features and problems of the design of millimeter-wave magnetrons are described. Cold secondary-emission cathode usage is considered as a promising factor for the device life prolongation. Field-emission cathodes instead of thermionic ones are proposed as the trigger units for further increase of the magnetron working life. The problems of ensuring enough frequency separation between the operating eigenmode and neighboring modes are discussed;using the rising-sun delay system and operating on spatial harmonics are proposed as possible solutions. The methods of providing enough emitting current from cathodes without their fast burnout are considered;the solution of the problem could lie in using inverted design of the magnetron. Examples of 'cold' (electrodynamic) calculations of the delay systems of millimeter-wave magnetrons are given. 'Hot' (electronic) simulations with PIC algorithms have been performed using TULIPgm code for magnetron and amplitron modeling. © 2021 IEEE.

关键词： Millimeter waves

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Generation of Uncorrelated Residual Variables for Chemical Process Fault Diagnosis via Transfer Learning-based Input-Output Decoupled Network

arXiv

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arXiv 2024年

作者： Pan, Zhuofu Sui, Qingkai Wang, Yalin Luo, Jiang Chen, Jie Chen, Hongtian The Xiangjiang Laboratory The School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China The School of Automation Central South University Changsha410083 China The School of Computer Science Hunan University of Technology and Business Changsha410205 China The Department of Automation Shanghai Jiao Tong University Shanghai200240 China

Structural decoupling has played an essential role in model-based fault isolation and estimation in past decades, which facilitates accurate fault localization and reconstruction thanks to the diagonal transfer matrix design. However, traditional methods exhibit limited effectiveness in modeling high-dimensional nonlinearity and big data, and the decoupling idea has not been well-valued in data-driven frameworks. Known for big data and complex feature extraction capabilities, deep learning has recently been used to develop residual generation models. Nevertheless, it lacks decoupling-related diagnostic designs. To this end, this paper proposes a transfer learning-based input-output decoupled network (TDN) for diagnostic purposes, which consists of an input-output decoupled network (IDN) and a pre-trained variational autocoder (VAE). In IDN, uncorrelated residual variables are generated by diagonalization and parallel computing operations. During the transfer learning phase, knowledge of normal status is provided according to VAE’s loss and maximum mean discrepancy loss to guide the training of IDN. After training, IDN learns the mapping from faulty to normal, thereby serving as the fault detection index and the estimated fault signal simultaneously. At last, the effectiveness of the developed TDN is verified by a numerical example and a chemical simulation. Copyright © 2024, The Authors. All rights reserved.

关键词： Fault detection

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An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifiers

An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifier...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Zhongzhiguang Lu Hanchao Li Yihao Zhuang Hanlin Xie Geok Ing Ng Yuanjin Zheng School of Electrical and Electronic Engineering Nanyang Technological University Singapore Agency for Science Technology and Research (A*STAR) Institute of Microelectronics (IME) Singapore

ISBN: (数字)9798350378771

ISBN: (纸本)9798350378788

Compared to other semiconductor technologies, GaN power amplifiers (PAs) demonstrate better efficiency, gain and thermal performance, which makes them very promising in the present 5G era. To design 5G GaN PAs, accurate and scalable GaN HEMT device modelling is very necessary. This paper proposes a hybrid physical GaN HEMTs model for 5G power amplifiers. Combine the concept of ASM-GaN-HEMT model and ANN technique, the simulation results of the proposed model in this paper are highly consistent with the test results in terms of the DC and RF characteristics. Multi-Objective Particle Swarm Optimization (MOPSO) is employed to derive the accurate surface potential values, which are the key parameters in ASM-GaN-HEMT. With the dimension information in the target equations, the derived GaN model will have certain scalability in device size. Also, artificial neural network (ANN) technique is utilized to build charge and nonlinear current models with the surface potential values. Effective self-heating and trapping effect models are introduced to demonstrate nonlinear effects. The proposed method significantly improves the accuracy of the S parameter compared to traditional models, reducing the large signal performance error to within 5%.

关键词： Performance evaluation Accuracy 5G mobile communication Scalability Power amplifiers HEMTs Mathematical models Hybrid power systems Gallium nitride Integrated circuit modeling

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Enhancing Quantum NLP Robustness - Analysis on Noisy Models for Quantum Sentiment Classification

Enhancing Quantum NLP Robustness - Analysis on Noisy Models ...

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International Conference of Advanced Informatics: Concept, Theory and Application (ICAICTA)

作者： Fariska Zakhralativa Ruskanda Michael Jonathan Halim Farizki Kurniawan Infall Syafalni Rahmat Mulyawan Akio Higo School of Electrical Engineering and Informatics Bandung Institute of Technology Indonesia Artificial Intelligence Center Bandung Institute of Technology Bandung Indonesia University Center of Excellence on Microelectronics Bandung Institute of Technology Indonesia Systems Design Lab School of Engineering The University of Tokyo Tokyo Japan

ISBN: (数字)9798331520311

ISBN: (纸本)9798331520328

This research aims to improve the robustness of Quantum Natural Language Processing (QNLP) models in the presence of noise. Using Lambeq, an open-source library for quantum NLP, we focus on sentiment classification tasks to eval-uate the impact of noisy quantum models. Our study involves the application of three types of optimizers: Simultaneous Perturbation Stochastic Approximation (SPSA), Nelder-Mead, and Adam. The performance and resilience of these optimizers are assessed under various noise conditions to determine their effectiveness in maintaining model accuracy and stability. The research shows that the Adam optimizer outperforms SPSA and NelderMead in QNLP simple sentiment analysis tasks, both in noiseless and noisy environments. Adam achieved 96.67 % accuracy in noiseless conditions, significantly higher than SPSA's 83.33 % and Nelder-Mead's 53.33%, highlighting its superior performance in optimizing quantum circuits. Moreover, in noisy simulation, Adam outperforms others with 70.00% accuracy performance. The work is useful for NLP implementations in quantum computers. This research is essential because the noisy nature of current quan-tum computers makes it difficult for QNLP models to perform accurately and reliably.

关键词： Computers Sentiment analysis Accuracy Computational modeling Noise Quantum mechanics Stochastic processes Robustness Stability analysis Noise measurement

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2019 20th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2019

2019 20th International Conference on Thermal, Mechanical an...

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20th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2019

ISBN: (纸本)9781538680407

The proceedings contain 78 papers. The topics discussed include: design for package miniaturization for a mems pressure sensor;transgranular crack propagation in thermal cycling of SnAgCu solder joints;effect of nonlinear interactions of electronic assemblies in response to multiaxial vibration;modeling and simulation of glass frit bonding of silicon wafers;analysis of self heating effect in vertical-channel field effect transistor;improved QFN thermal cycling reliability using low melting temperature SnBi based solder paste LMPA-Q;numerical prediction of failure in SnAgCu solder under shear and tensile-dominant cyclic loading;coupled electro-mechanical simulation of capacitive MEMS accelerometer for determining optimal parameters of readout circuit;air-coupled array of pmuts at 100 kHz with PZT active layer: multiphysics model and experiments;and development of a modular test setup for reliability testing under harsh environment conditions.

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Substrate design Optimization of Fine Pitch FCCSP for Molded Underfill Void Free Evaluation

Substrate Design Optimization of Fine Pitch FCCSP for Molded...

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Electronics Packaging Technology Conference (EPTC)

作者： Freedman Yen Vito Lin Yu-Po Wang Cooperate R & D Siliconware Precision Industries Co. Ltd. Tantzu Taichung Taiwan

ISBN: (纸本)9798350398861

The microelectronics products of Flip Chip-Chip Scale Package (FCCSP) with more increasing challenges are faced to assure molding capability with rapid advances in flip chip technology such as decreasing stand-off height and fine bump pitch (high bump density), especially when Molded Underfill (MUF) is used during transfer molding process. There is one important challenge that faced severe air void entrapment underneath the die region (air void concentrate among bumps region). Generally, the experiments involving a lot of DOE matrixes which spend a lot of time and materials (dummy die, substrate, mold compound…etc.) to solve this air void issue. As above reasons, the moldflow simulation can be used to apply molding parameters to find out optimum solutions for air void risk free of MUF FCCSP with different substrate solder mask pattern design which can reduce development cycle time before mass production. In this paper, 3D moldflow simulation software which can apply transfer molding process parameters is used. There is substrate solder mask with different opening area percentage (finger like) design within die region and molding compound flow to die region that solder mask opening area with 20um depth structure to perform different melt-front behavior. From this study, we can conclude some results for improvement molding performance of FCCSP(MUF) during transfer molding process. The FCCSP(MUF) with the 65um stand-off height structure performs low air void risk due to mold compound could easily flow under die region with more flow space. In addition, mold compound also performs well melt-front flow when the substrate solder mask with opening area as 25% and opening pattern design as horizontal as flow direction that both can get more space and smooth flow underneath die region to reduce void risk during molding process.

关键词： Solid modeling Three-dimensional displays Atmospheric modeling Software microelectronics Compounds Transfer molding

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FEA simulation and modeling for fan-out package design

FEA simulation and modeling for fan-out package design

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Electronics Packaging Technology Conference (EPTC)

作者： Rathin Mandal A-STAR Institute of Microelectronics

ISBN: (纸本)9798350398861

The fan-out package technology is introduced for package miniaturization, better electrical performance and lower cost. In this paper we are presenting wafer level warpage prediction followed by package stress and warpage, board level temperature cycling reliability and solder ball shear test modeling for a reliable package design. A modeling methodology for wafer level warpage is presented here with cure shrinkage material properties for polymeric materials. Cure shrinkage material property is showing around 35% more wafer level warpage than without cure shrinkage. Wafer warpage increased by 1.340mm for every 10 micron meter photo-dielectric polyamide (PI) thickness. The package stress modeling shows critical UBM (under bump metallization) stress is at the UBM neck at -50°C. Board level reliability (BLR) for temperature cycling (TC) solder fatigue life is more than 2000 cycles for a fully populated 10mm ×10mm, 0.4mm pitch, UBM SAC-Q solder. The SAC-Q solder reliability life is more than 1.5X of SAC387. The solder ball shear test FEA modeling also shows strong integrity of copper and mold compound materials and failure occurs at the bulk solder.

关键词： Semiconductor device modeling Analytical models Temperature Semiconductor device reliability Predictive models Reliability engineering Neck

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