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Siberian Conference on Control and Communications (SIBCON)

作者： Vladislav Chumakov Nikolay Prokopenko Alexey Titov Don State Technical University Rostov-on-Don Russia Institute for Design Problems in Microelectronics of RAS Don State Technical University Rostov-on-Don Zelenograd Russia Southern Federal University Rostov-on-Don Russian Federation

ISBN: (纸本)9781665476294

The study presents an analysis of universal JFET and CMOS differential stages (DS) circuits. Such cascades provide a smaller range of transistor currents (10-100 $\mu$A) compared to classical cascades. The described DSs are implemented on combined process technologies, and therefore can be designed on JFET, BJT or CMOS chips. In addition, gallium arsenide, diamond gallium nitride, thin-film TFT and silicon carbide transistors. A computer simulation of the static modes of the developed DSs and their current dependences is presented. The results of GaAs DS modeling and its frequency dependence are presented.

关键词： Semiconductor device modeling Silicon carbide Gallium arsenide Diamonds CMOS technology Silicon JFETs

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Advanced (Metal 3D-Printed) Direct Liquid Jet-Impingement Cooling Solution for Autonomous Driving High-Performance Vehicle Computer (HPVC)

Advanced (Metal 3D-Printed) Direct Liquid Jet-Impingement Co...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Antonio Pappaterra Bart Vandevelde Majid Nazemi Willem Verleysen Herman Oprins Interuniversity Microelectronics Centre (IMEC) Leuven Belgium Materialise Leuven Belgium

In this paper, a High-Performance direct liquid jet-impingement cooler is presented to guarantee the proper thermal operating conditions in High-Performance processors (up to 300W), enabling level 5 autonomous driving. Computational Fluid-Dynamics (CFD) simulations are performed on the 3D model to reach the final design iteration and show the superior performances. The 3D metal printability of a prototyped liquid-based printed cooler version and the integration to a chip is demonstrated, furthermore experiments are carried out to proof the validity of the CFD modeling methodology and the enhanced potentialities of the solution compared to possible cooling alternatives.

关键词： Micromechanical devices Solid modeling Three-dimensional displays Program processors Cooling Computational modeling Metals

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VLSI design of Low Power $8\times 4$ Barrel Shifter using 90 nm TG technology

VLSI Design of Low Power $8\times 4$ Barrel Shifter using 90...

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microelectronics, Signals & Systems (ICMSS), International Conference on

作者： Jaya Sai Deepak Vudatha Naveena Kota Preethi Gutha Baby Sreeja Sreenidhi Prabha Rajeev Department of Electronics and Communication Engineering Amrita Vishwa Vidyapeetham AmritapuriIndia

ISBN: (纸本)9781665448864

The barrel shifter is known for the manipulation of various bits in a single clock cycle. In this paper, an $8\times 4$ barrel shifter is designed using transmission gate technology. The design and simulations are carried out using the cadence virtuoso tool at 90 nm technology. The simulation results show that the power consumed by the proposed design is 51.5% more efficient than the barrel shifter designed from CMOS NAND-based multiplexer design. Hence this design can be used in the application of low-power digital communication.

关键词： Semiconductor device modeling Multiplexing Power demand Temperature simulation Voltage Switches

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基于自对准技术的4管像素寄生电容建模与分析

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激光与光电子学进展 2023年第19期60卷 202-208页

作者：杜雅娟高静高志远聂凯明天津大学微电子学院天津300072 天津市成像与感知微电子技术重点实验室天津300072

转换增益是微光CMOS图像传感器的重要参数,转换增益的提高有助于提升图像传感器的信噪比,进而提升灵敏度和成像质量。由于转换增益与像素的寄生电容成反比关系,为有效提升转换增益,提出了一种基于自对准技术的4管有源像素寄生电容的二... 详细信息

转换增益是微光CMOS图像传感器的重要参数,转换增益的提高有助于提升图像传感器的信噪比,进而提升灵敏度和成像质量。由于转换增益与像素的寄生电容成反比关系,为有效提升转换增益,提出了一种基于自对准技术的4管有源像素寄生电容的二维物理模型。该模型建立了像素寄生电容与注入条件之间的关系,其中包括注入剂量、注入能量和复位电压,该模型的计算结果与TCAD仿真结果具有较高的一致性,二者之间的方差小于0.0028 fF2,验证了该模型的准确性。该模型能应用于高性能图像传感器尤其是高灵敏度微光图像传感器的设计和优化中。

关键词：有源像素转换增益寄生电容注入工艺

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EI-MOR: A Hybrid Exponential Integrator and Model Order Reduction Approach for Transient Power/Ground Network Analysis

EI-MOR: A Hybrid Exponential Integrator and Model Order Redu...

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IEEE International Conference on Computer-Aided design

作者： Cong Wang Dongen Yang Quan Chen School of Microelectronics Southern University of Science and Technology Shenzhen China

Exponential integrator (EI) method has been proved to be an effective technique to accelerate large-scale transient power/ground network analysis. However, EI requires the inputs to be piece-wise linear (PWL) in one step, which greatly limits the step size when the inputs are poorly aligned. To address this issue, in this work we first elucidate with mathematical proof that EI, when used together with the rational Krylov subspace, is equivalent to performing a moment-matching model order reduction (MOR) with single input in each time step, then advancing the reduced system using EI in the same step. Based on this equivalence, we next devise a hybrid method, EI-MOR, to combine the usage of EI and MOR in the same transient simulation. A majority group of well-aligned inputs are still treated by EI as usual, while a few misaligned inputs are selected to be handled by a MOR process producing a reduced model that works for arbitrary inputs. Therefore the step size limitation imposed by the misaligned inputs can be largely alleviated. Numerical experiments are conducted to demonstrate the efficacy of the proposed method.

关键词： Analytical models design automation Computational modeling Circuit simulation Network analyzers Linear circuits Mathematical models

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design of Millimetre-Wave Passive Mixer in 45-nm SOI CMOS Technology

Design of Millimetre-Wave Passive Mixer in 45-nm SOI CMOS Te...

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2022 International Symposium on Antennas and Propagation (ISAP)

作者： Jim Darrell Ang Jefferson A. Hora Xi Zhu School of Electrical and Data Engineering University of Technology Sydney NSW Australia Microelectronics Laboratory Mindanao State University -- Iligan Institute of Technology Iligan City Philippines

ISBN: (数字)9781665479622

ISBN: (纸本)9781665479639

design of a millimetre-wave passive mixer in 45nm SOI CMOS technology is presented in this work. To balance the conversion loss of the mixer with linearity, bias conditions are carefully selected. Moreover, transformer baluns are used to convert single-ended signal to differential ones for both LO and RF ports. Based on the electromagnetic simulations, the designed mixer has a return loss better than -10 dB for the RF port, and the conversion loss of the designed mixer is 10 dB, while a 14-dBm LO power is used. Meanwhile, under the same LO power, the P1dB of the designed mixer is 10 dBm. The overall size of the designed mixer with all RF and DC pads is only $0.95 \times 0.6$ mm$^{\mathbfdesign}$.

关键词： Radio frequency Semiconductor device modeling Phased arrays simulation Linearity Receivers CMOS technology

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design of an Online Detection System for High-Power Submerged Arc Furnace with Magnetic Field Difference 7th

Design of an Online Detection System for High-Power Submerge...

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7th International Conference on Life System modeling and simulation, LSMS 2021, and 7th International Conference on Intelligent Computing for Sustainable Energy and Environment, ICSEE 2021

作者： Liu, Wei-Ling Yang, Zi-Kai Yang, Ling-Zhen Chang, Xiao-Ming School of Data Science Taiyuan University of Technology Taiyuan Shanxi030024 China School of Microelectronics Tianjin University Tianjin300072 China School of Physics and Optoelectronics Taiyuan University of Technology Taiyuan Shanxi030024 China School of Information and Computer Science Taiyuan University of Technology Taiyuan Shanxi030024 China

ISBN: (纸本)9789811672095

An online measurement system to effectively detect electrode tip position of high-power submerged arc furnace (SAF) based on magnetic field difference were proposed and demonstrated. According to the current distribution characteristics near the electrode tip position and the theory of electromagnetism, a magnetic field radiation model was established, and the differential array sensing system was explored and developed based on sensing mechanism of differential magnetic field. The electrode tip position is obtained through collecting magnetic field information outside the furnace and analyzing the current difference characteristics. The experiment and simulation results showed that the peak point of the magnetic field distribution curve on the electrode line is near the electrode tip position of the furnace. The differential on-line measuring system can accurately detect the electrode tip position of the high-power SAF, which has important significance in optimizing the smelting process, improving the quality of products and reducing energy consumption. © 2021, Springer Nature Singapore Pte Ltd.

关键词： Magnetic fields

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modeling advanced spintronic based magnetoresistive memory

Modeling advanced spintronic based magnetoresistive memory

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International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022)

作者： S. Fiorentini M. Bendra J. Ender T. Hadámek W. J. Loch N. P. Jθrstad R. Orio W. Goes S. Selberherr V. Sverdlov Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics TU Wien Austria Institute for Microelectronics TU Wien Austria Silvaco Europe Ltd. Cambridge United Kingdom

Spintronic based magnetoresistive memory shows an increasing potential in replacing conventional charge based memory for stand-alone and embedded applications. Accurate simulation tools, providing a comprehensive evaluation of the spin torques and magnetization dynamics in structures with several ferromagnetic and nonmagnetic metal layers separated by tunnel barriers, are required to design advanced magnetoresitive memory cells. We demonstrate that the coupled spin and charge drift-diffusion transport approach, extended to describe magnetic tunnel junctions and augmented with temperature, is suitable to describe complex magnetoresitive memory cells with two reference layers controlled by spin torques.

关键词： ferromagnetic materials magnetic multilayers magnetisation magnetoelectronics magnetoresistive devices MRAM devices spin polarised transport tunnelling magnetoresistance

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design of Fast Start-up CMOS RC Oscillator Based on Low Temperature Coefficient Current Mode Bandgap Reference

Design of Fast Start-up CMOS RC Oscillator Based on Low Temp...

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International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Mincong Wang Xin Liu Chongbin Hou Cheng Liu School of Microelectronics Shanghai University Shanghai China School of Software & Microelectronics Peking University Beijing China

ISBN: (纸本)9781665460583

This paper presents a fully integrated 2MHz RC oscillator which is less affected by the fluctuations of power supply voltage and ambient temperature. This design consists of a current mode bandgap reference circuit and an RC oscillation circuit. Furthermore, a digital trimming circuit is used to adjust the frequency back to the ideal one, in order to obtain better accuracy. The proposed current mode bandgap reference has a very low temperature coefficient, which is only 1.66ppm/°C. This RC oscillator can work in the power supply range of l.9V to 4.6V and the ambient temperature of −40°C~+125°C, and has a very fast start-up speed. After digital trimming, the frequency can be adjusted back to the target frequency under the other four process corners, and the circuit supports complete shutdown. Spectre simulation was made based on CSMC’s $0.18\mu \mathrm{m}$ CMOS technology. The final die size is $194\mu \mathrm{m}\times 87\mu \mathrm{m}$.

关键词： Semiconductor device modeling Temperature distribution Time-frequency analysis Photonic band gap Power supplies Voltage Stability analysis

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光热电效应的机理、表征与性能综述

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中国激光 2023年第1期50卷 42-61页

作者：管志强代伟陈修平徐红星湖北江城实验室湖北武汉430205 武汉大学物理科学与技术学院湖北武汉430072 武汉大学微电子学院湖北武汉430072 武汉大纳米科学与技术研究中心人工微结构教育部重点实验室湖北武汉430072

光热电效应是近年来涌现的一种新型的光电探测机制,具有可零偏压工作、宽谱响应、不受带隙限制的优点,在红外和太赫兹波段具有广阔的应用前景。随着纳米材料中热载流子的高效利用以及对室温长波探测需求的增加,光热电效应研究近年来发... 详细信息

光热电效应是近年来涌现的一种新型的光电探测机制,具有可零偏压工作、宽谱响应、不受带隙限制的优点,在红外和太赫兹波段具有广阔的应用前景。随着纳米材料中热载流子的高效利用以及对室温长波探测需求的增加,光热电效应研究近年来发展迅速,涌现出一系列新材料和新型器件设计方法。在近年来已发表的光热电效应综述文章的基础上,本文重点对光热电效应的机理、仿真、材料相关参数测量方法、器件设计,以及探测性能近三年的进展进行了梳理和总结,希望能给相关领域的研究人员提供有益参考。

关键词：探测器光热电效应热载流子塞贝克效应多物理场模型

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