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Environment for modeling and simulation of Biosystems, Biosensors, and Lab-on-Chips

IEEE TRANSACTIONS ON ELECTRON DEVICES 2019年第1期66卷 34-43页

作者： Madec, Morgan Bonament, Alexi Rosati, Elise Takakura, Yoshitate Haiech, Jacques Hebrard, Luc Lallement, Christophe Univ Strasbourg CNRS Lab Engn Sci Comp Sci & Imaging ICube F-67081 Strasbourg France Univ Strasbourg CNRS Biotechnol & Cell Signaling F-67081 Strasbourg France

The design of biosystems, biosensors, and lab-on-chips is an important field of investigation since the beginning of this century. The miniaturization and the integration constraints make the design of such systems challenging, and it is no longer possible to uncouple biology (or biochemistry) from the rest of the system. The interest of extending microelectronics computer-aided design tools to multidomain systems has already been demonstrated for two decades. Today, it becomes necessary to include biology among these domains. To enable such an evolution, we demonstrate an analogy between the behavior of biochemical systems and electrical circuits. This analogy is exploited to develop a tool for the description and the simulation of biological systems with SPICE. In addition, another analogy is drawn between molecular diffusion and heat diffusion. We also rely on it to develop an innovative framework for the simulation with SPICE of reaction-diffusion problems. The interest of such an approach is illustrated in the design of a penicillin sensor. A complete model of the system, which integrates biochemistry, electrochemistry, and electronics, is obtained. This model is then simulated for a first dimensioning of the sensor.

关键词： Biosensors lab-on-chips reaction-diffusion problems simulation system-level modeling virtual prototyping

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Sallen-Key High-Pass Filter with Unrelated Tune of Generic Parameter

Sallen-Key High-Pass Filter with Unrelated Tune of Generic P...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Darya Yu. Denisenko Nikolay N. Prokopenko Yuri I. Ivanov Nikolay N. Butyrlagin Department of Scientific Research Don State Technical University Rostov-on-Don Russia Department of Automatic Control Systems Don State Technical University Southern Federal University Rostov-on-Don Russia Department of Information Systems and Radio Engineering Academy of Sciences Don State Technical University Institute for Design Problems in Microelectronics of Russian Rostov-on-Don Zelenograd Russia Department of Information Systems and Radio Engineering Don State Technical University Rostov-on-Don Russia

ISBN: (数字)9781665498043

ISBN: (纸本)9781665498050

New second order high-pass filter of the Sallen-Key family circuit is considered, where there is unrelated tune of generic parameters by a digitally controlled resistor - the pole frequency, Q-factor pole and the scale transfer coefficient. The basic mathematical expressions of transfer function for proposed high-pass filter are obtained. A comparison of the parameters of the known and new schemes is given. A Sallen-Key high-pass filter circuit based on a high-frequency emitter follower has been developed. The results of high-pass filter modeling in the Micro-Cap 12 environment using the OP37 operational amplifier and an ideal buffer amplifier are presented. Computer simulation has shown that the pole frequency is adjusted by resistor R5. Adjusting the pole attenuation is possible by changing the resistor R3, while the pole attenuation frequency unchanged, an increase in R3 leads to an increase of the pole attenuation.

关键词： Resistors Q-factor Performance evaluation Temperature dependence Temperature Silicon carbide Computer simulation

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modeling Tool for Capacitive RF MEMS Operating Bias Voltage Optimization

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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2019年第4期19卷 602-608页

作者： Amiaud, Anne-Charlotte Leuliet, Aude Loiseaux, Brigitte Nagle, Julien Martins, Paolo Aubry, Raphael Hole, Stephane Thales Res & Technol GRTM F-91767 Palaiseau France Sorbonne Univ PSL Univ CNRS ESPCI Paris F-75005 Paris France

In this paper, dielectric charging process in dielectrics under bias voltage is investigated. Dielectric materials, used in numerous devices in microelectronics, can be subjected to significant electrical stress. These high electric fields impact the device lifetime. Actuation voltage measurements of capacitive RF MEMS as a function of stress time have been performed. Results show that the actuation voltage varies because of charge storage in the dielectric thin film. In this work a simulation code has been developed to model charge transport phenomena in insulators. This model takes into account tunnel and thermal effects in the dielectric and at the dielectric-metal interfaces. Thanks to this model, charge carrier distribution in the dielectric layer can be calculated. The actuation bias shift versus time, which can be responsible for RF capacitive structure failure, can also be determined. Experimental results can be reproduced thanks to simulations. This simulation tool is then used to define the optimal operating voltage value for a given RF MEMS device. It may also be used to assist in device design in microelectronics. Indeed for a given material set, the optimal operating voltage value is calculated as a function of device properties.

关键词： Dielectrics Electrodes Radio frequency Micromechanical devices Voltage measurement Mathematical model Dielectric measurement microelectronics reliability modeling dielectric materials electrical stress charge accumulation

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Interconnect electromigration modeling based on chemical mechanical polishing process variation

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microelectronics Reliability 2025年 172卷

作者： Yali Wang Lan Chen Zhaohui Qin Renjie Lu Rong Chen Institute of Microelectronics of the Chinese Academy of Sciences China

The interconnect electromigration (EM) analysis technology based on process variation is innovatively proposed in this study. The defect morphology in the interconnect is accurately described for the dishing defect characterization of the interconnect, and the interconnect based on technology computer aided design (TCAD) model under the influence of flattening process like chemical mechanical polishing (CMP) variation is established. For different interconnect structures and defect types, accurate simulation analysis of temperature, current density and electromigration phenomena in complex process variation environments is realized, which provides theoretical support and analysis methods for improving the reliability and performance optimization of interconnects. Moreover, the void growth model and resistance switching model of interconnect electromigration considering process variation are proposed, and the mean time to failure (MTTF) model of interconnect electromigration is established to improve the accuracy of electromigration failure time and reliability model.

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simulation and Analysis of Microparticles Acoustophoretic Separation in Multi-Channel Lab-Chip Device

Simulation and Analysis of Microparticles Acoustophoretic Se...

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International Conference on CAD Systems in microelectronics (CADSM)

作者： Tamara Klymkovych Nataliia Bokla Oleh Matviykiv Volodymyr Stakhiv Lviv Polytechnic National University Lviv Ukraine

ISBN: (数字)9781665438940

ISBN: (纸本)9781665446051

The separation of Suspended Microparticles based on physical and chemical properties is an essential step in numerous microfluidic applications. Recent research of acoustofluidic effects proves that acoustophoresis is an effective and flexible method for continuous sorting and separation of multiple beads, living cells, and suspended microparticles. The following research dedicated to the novel design of a microparticle sorter consisted of two pairs of IDT electrodes and provided precise sorting capabilities for multi-channel microfluidic structures. modeling and FEM simulation of the soot and fly ash microparticles separation in CAD/CAE tools allow visualizing the multiphysical interactions between fluid flow, standing acoustic waves, and suspended microparticles in microfluidic Lab-chip devices.

关键词： Solid modeling Fly ash Visualization Surface acoustic waves Tools Microfluidics Sorting

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design and simulation of Optical XNOR Logic Gate Based on MEMS Technology

Design and Simulation of Optical XNOR Logic Gate Based on ME...

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microelectronics (IICM), Iranian International Conference on

作者： Mohamadreza Eslami Fahimeh Marvi Kian Jafari Dinani Faculty of Electrical Engineering Shahid Beheshti University Tehran Iran

ISBN: (纸本)9781665480611

Prototypes of computers, or processors, were based almost exclusively on mechanical devices. Although electronic processors have become increasingly dominant over the past few decades, Recent advances in the technology of manufacturing 3D electromechanical components in micro and nano sizes have created new techniques for building complex microstructures that are of interest to researchers in new research In the field of mechanical computing. In this paper, we present a new XNOR logic gate design approach that can be built based on micro-electro-mechanical logic gates. One of the main advantages of this method is the ability to combine multi-physical as well as compatibility with the CMOS manufacturing process, as well as lower power consumption compared to logic gates consisting of several CMOS transistors. In this design, we have designed and simulated an XNOR logic gate using the multi-physics capability of Comsol-software and as well as using optical, electronic, mechanical and electro-static physics, whose inputs will be both electrical and optical signals. In this paper, according to the above selected design, by modeling and simulating different input modes of this logic gate, we examine the effect of each mode on the output of the gate as well as other features such as structure life, power consumption and resonant frequency. The proposed gate structure has a resonant frequency of 46 kHz and is highly reliable because it can operate without mechanical connection of the MEMS operator to logic inputs.

关键词： Micromechanical devices Computers Program processors Power demand Optical design Resonant frequency Logic gates

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Transfer Molding simulation to Predict Filling Flaws and Optimize Package design 22

Transfer Molding Simulation to Predict Filling Flaws and Opt...

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22nd European microelectronics and Packaging Conference and Exhibition (EMPC)

作者： Rovitto, M. Cannavacciuolo, A. STMicroelectronics Via C Olivetti 2 I-20864 Agrate Brianza MB Italy

ISBN: (纸本)9780956808660

The process of microchip encapsulation by epoxy resin injection is simulated by employing moldflow modeling. In this work, the use of modeling allows to reproduce the unbalanced flow behavior of the resin within the mold cavity during the filling stage which leads to the formation of voids in the molded package. simulation results are compared to experimental findings, in which the molding process is interrupted at designed points in time. Comparison shows good agreement between numerical outputs and experimental data and demonstrates the effectiveness of the model. After modeling is validated, the numerical methodology is applied to optimized package design in order to minimize the risk of issues caused by the filling stage. As a result, geometric variations show a significant effect on filling front progression avoiding the generation of structural defects during molding process.

关键词： package molding resin moldflow void weld line

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designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications

Designing EDA-Compatible Cryogenic CMOS Platform for Quantum...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Zewei Wang Chengwei Cao Puqing Yang Yumeng Yuan Zhidong Tang Renhe Chen Weican Wu Xin Luo Ao Guo Liujiang Yu Ganbing Shang Zhaofeng Zhang Shaojian Hu Xufeng Kou Information of Science and Technology ShanghaiTech University Shanghai China Shanghai IC Research and Development Center Shanghai China Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China Huali Microelectronics Corporation (HLMC) Shanghai China

This paper presents the temperature-dependent characterizations and compact modeling on both the front-end-of-line (FEOL) and back-end-of-line (BEOL) devices based on the HLMC 40-nm low-power CMOS technology. Moreover, an EDA-compatible cryo-CMOS platform which covers the 10 region is developed to guide the design of specific cryogenic integrated circuits for quantum computing applications.

关键词： Semiconductor device modeling MOSFET Solid modeling Quantum computing Superconducting integrated circuits Computational modeling simulation

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“微电子材料设计与器件仿真”的教学改革与实践

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教育教学论坛 2024年第43期 65-68页

作者：张胜利邹友生石晓琴曾海波南京理工大学材料科学与工程学院江苏南京210094

传统的微电子材料和器件类课程开展的一些常规实验存在过程烦琐、耗时长、费用高等问题。南京理工大学材料物理专业以培养德才兼备的专业技术人才为目标,将仿真模拟技术引入教学,开设了融合思想政治教育的课内综合性实验,实验包括思想... 详细信息

传统的微电子材料和器件类课程开展的一些常规实验存在过程烦琐、耗时长、费用高等问题。南京理工大学材料物理专业以培养德才兼备的专业技术人才为目标,将仿真模拟技术引入教学,开设了融合思想政治教育的课内综合性实验,实验包括思想政治教育引课、半导体材料设计和电子性质计算、器件模型搭建和仿真。适时运用上机操作可以将理论与实践更好地结合,极大地增强教学的表现力,既可以激发学生科技报国的信念及使命担当,又能够培养学生的高阶创新实践能力,为我国微电子技术人才的培养提供有力的保障。

关键词：课程思政综合性实验微电子材料设计器件仿真

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simulation of fast room-temperature bonding by mechanical interlock structure applied for 3D integration

Simulation of fast room-temperature bonding by mechanical in...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Ziyu Liu Yaomin Gong Lin Chen Qingqing Sun Wei Zhang School of Microelectronics Fudan University Shanghai China

A mechanical interlock Cu-Sn bonding for multi-chip 3D integration is proposed to save total bonding time and lower bonding temperature. Protrusion Cu width, recess width were optimized based on strain and stress simulation. Bonding pressure, annealing temperature, and shear stress after mechanical interconnection were studied for the process condition. Then optimal design was proposed finally.

关键词： Solid modeling Three-dimensional displays Annealing Force Manufacturing Bonding Stress

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