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16th International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th Conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Contreras, Boris Ducoudray, Gladys Palomera, Rogelio Bernal, Carlos Univ Puerto Rico Dept Elect & Comp Engn Mayaguez PR 00681 USA

ISBN: (纸本)9781728112015

This work focuses in using experimental measurements to extract the aspect ratio (W/L) for Gate-Enclosed or Annular MOSFETs. All measurements and calculations are performed with an automated virtual instrumentation (VI) environment developed in LabVIEW. The VI was capable of extracting threshold voltage and low field mobility, needed for W/L calculation. An extraction procedure for the body effect factor is also presented. For validation purposes, extracted parameters were compared with those provided by the foundry (MOSIS) using traditional rectangular transistors. The extracted W/L was validated by comparing to Giraldo's experimental method. The SPICE BSIM 3 model parameters provided by the foundry is then modified using the extracted parameters including the aspect ratio. With this modification better simulation results were obtained. They were compared to the experimental measurements for an annular MOSFET drain voltage vs drain current characteristic curves at different gate voltages, showing an improvement of 58% when compared to the original non modified SPICE model parameters.

关键词： SPICE

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Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

Performance Evaluation of Negative Capacitance Reconfigurabl...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Zihan Sun Xianglong Li Yabin Sun Ziyu Liu Yanling Shi Xiaojin Li East China Normal University Shanghai China School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781728181769;9781728181776

A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.

关键词： Performance evaluation Solid modeling Electric potential Three-dimensional displays Field effect transistors Logic gates Capacitance

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modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

Modeling Assisted Room Temperature Operation of Atomic Preci...

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International Conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Xujiao Gao Lisa A. Tracy Evan M. Anderson DeAnna M. Campbell Jeffrey A. Ivie Tzu-Ming Lu Denis Mamaluy Scott W. Schmucker Shashank Misra Electrical Models & Simulation Sandia National Laboratories Albuquerque USA Quantum Phenomena Sandia National Laboratories Albuquerque USA Multiscale Fab Sci & Tech Dev Sandia National Laboratories Albuquerque USA Biological & Chemical Sensors Sandia National Laboratories Albuquerque USA Cognitive & Emerging Computing Sandia National Laboratories Albuquerque USA

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

One big challenge of the emerging atomic precision advanced manufacturing (APAM) technology for microelectronics application is to realize APAM devices that operate at room temperature (RT). We demonstrate that semiclassical technology computer aided design (TCAD) device simulation tool can be employed to understand current leakage and improve APAM device design for RT operation. To establish the applicability of semiclassical simulation, we first show that a semiclassical impurity scattering model with the Fermi-Dirac statistics can explain the very low mobility in APAM devices quite well; we also show semiclassical TCAD reproduces measured sheet resistances when proper mobility values are used. We then apply semiclassical TCAD to simulate current leakage in realistic APAM wires. With insights from modeling, we were able to improve device design, fabricate Hall bars, and demonstrate RT operation for the very first time.

关键词： Temperature measurement Computational modeling Wires Scattering Semiconductor process modeling Manufacturing microelectronics

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基于MEMS电容式加速度计的闭环读出电路设计

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传感技术学报 2021年第2期34卷 162-167页

作者：徐娇张玉龙杨中宝吴次南刘泽文贵州大学大数据与信息工程学院贵州贵阳550025 清华大学微电子学研究所北京100084

设计了面向圆片级封装的一种闭环加速度计读出电路。在基于电容式微加速度计结构的读出电路设计中考虑了寄生电容对整个系统的影响。用MATLAB SIMULINK对所设计的读出电路进行了建模仿真。在仿真过程中分析了噪声、圆片级封装与普通封... 详细信息

设计了面向圆片级封装的一种闭环加速度计读出电路。在基于电容式微加速度计结构的读出电路设计中考虑了寄生电容对整个系统的影响。用MATLAB SIMULINK对所设计的读出电路进行了建模仿真。在仿真过程中分析了噪声、圆片级封装与普通封装的寄生参数及实际工艺中流水结构的不对称性的影响并进行了比较。结果表明,所设计传感器及读出电路的非线性误差在量程±20 gn范围内小于0.5%;圆片级封装的稳定时间在2 ms,小于普通封装的稳定时间;基于圆片级封装的对称性梳齿结构的输出电压灵敏度为328 mV/gn。

关键词：微加速度计仿真模型数学建模不对称梳齿圆片级封装

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A comparative study of stress-based and fracture mechanics-based finite element simulation approaches for RDL based wafer level package

A comparative study of stress-based and fracture mechanics-b...

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Electronics Packaging Technology Conference (EPTC)

作者： Sasi Kumar Tippabhotla Lin Ji Tai Chong Chai Institute of Microelectronics A*STAR (Agency for Science Technology and Research) 2 Fusionopolis Way Innovis Tower A Singapore

ISBN: (纸本)9781665416207

Conventional stress analysis (CSA) and fracture mechanics using cohesive zone modelling (CZM) approaches are currently available in the finite element analysis framework for virtual design evaluation of microelectronic packages. CSA exists for a long time and the CZM is currently being adopted widely, especially by the universities and R&D institutes. Both the approaches have their own advantages and challenges. In this scenario, a comparison of relative merits and limitations need to be evaluated to make efficient use of both the approaches in the package development process. Such a comparison aids the simulation engineers to gage the requirements of each approach and plan an affordable simulation strategy while maximizing the output. In this study we present a comparative evaluation of CSA approach and fracture mechanics approach using CZM for design evaluation of a simple fan-out wafer level package. We show the requirements (mechanical properties and mechanical and fracture strength details of materials) and merits (prediction capabilities) of both the approaches and thus gauge their viability and suitability for different design stages. We also show the specific advantages and challenges of CZM approach. We conclude that the CZM method enhances the virtual product development process through its capability of predicting the likeliness of delamination and damage. However, this approach has the prerequisite of fracture properties of the material interfaces. The initial (conceptual/preliminary) development phases of a new package require evaluation of a large number of candidate materials, processes and designs and the fracture strength (interface/bulk) data for all the material/process combinations are seldom available. The CSA approach is more suitable for such situation to narrow down the product parameters by comparative analysis. The candidate designs thus narrowed down can be simulated using CZM approach to evaluate the likeliness of delamination and modific

关键词： Semiconductor device modeling Analytical models Temperature Systematics Product development Finite element analysis Delamination

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基于SysML&SystemC的GPU任务调度单元事务级建模

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无线电工程 2021年第2期51卷 161-167页

作者：张少锋田泽吴晓成张骏陈佳航空工业西安航空计算技术研究所陕西西安710068 西安翔腾微电子科技有限公司陕西西安710068 集成电路与微系统设计航空科技重点实验室陕西西安710068

传统的“瀑布”式芯片设计验证方法缺乏高效的协同设计验证手段,已不能满足当前架构复杂和规模宏大的GPU芯片的设计开发要求,采用基于事务级建模(Transaction-Level modeling,TLM)模型的设计验证方法应运而生。作为GPU图形顶点和像素染... 详细信息

传统的“瀑布”式芯片设计验证方法缺乏高效的协同设计验证手段,已不能满足当前架构复杂和规模宏大的GPU芯片的设计开发要求,采用基于事务级建模(Transaction-Level modeling,TLM)模型的设计验证方法应运而生。作为GPU图形顶点和像素染色任务的调度中枢,任务调度单元的设计尤为复杂和关键,为了加速架构、软件和RTL的研制进度,联合系统建模语言(SysML)和SystemC语言对任务调度单元进行事务级建模。利用SysML构建了任务调度单元的结构和行为视图模型,通过视图模型对架构设计的静态结构和动态行为进行初步的分析验证,利用SystemC语言构建了任务调度单元的TLM模型,搭建了仿真平台进一步验证和优化了架构和算法设计。TLM模型为软件和RTL设计提供了参考模型,有效降低了GPU设计验证迭代的复杂度,加速了GPU的设计验证收敛。

关键词： GPU 系统建模语言事务级建模 SystemC 任务调度单元

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Experimental and simulation research on the difference in motion technology levels based on nonlinear characteristics

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NONLINEAR ENGINEERING - modeling AND APPLICATION 2022年第1期11卷 629-636页

作者： Liang, Guiping Fu, Haiming Ganapathy, Sekar Bhola, Jyoti Doddawad, Vidya G. G. Athawale, Shashikant V. V. Bhatia, Komal Kumar Model Inst Engn & Technol Dept Elect & Commun Engn Jammu J&K India Guangzhou Huaxia Vocat Coll Guangzhou 510935 Guangdong Peoples R China Sri Ramakrishna Inst Technol Dept Elect & Commun Engn Coimbatore Tamil Nadu India JSS Dent Coll & Hosp JSSAHER Mysore India Model Inst Engn & Technol Dept Elect & Commun Engn Pune India Savitribai Phule Pune Univ AISSMS COE Dept Comp Engn Pune Maharastra India Ertwhile YMCA Univ Sci & Technol Fac Informat & Comp JC Bose Univ Sci &Technol Dept Comp Engn Faridabad 121004 Haryana India

Wearable and movable lodged health monitoring gadgets, micro-sensors, human system locating gadgets, and other gadgets started to appear as low-power communication mechanisms and microelectronics mechanisms grew in popularity. More people are interested in energy capture technology, which turns the energy created by motion technology into electric energy. To understand the difference in motor skill levels, a nonlinear feature-oriented method was proposed. A bi-stable magnetic-coupled piezoelectric cantilever was designed to detect the horizontal difference of motion technology. The horizontal difference was increased by the acceleration generated by the oscillation of the leg and the impression betwixt the leg and the ground during the movement. Based on the Hamiltonian principle and motion technique signal, a nonlinear dynamic model for energy capture in motion technique is established. According to the shaking features of human leg motion, a moveable nonlinear shaking energy-gaining system was the layout, which realized the dynamic characteristics of straight, nonlinear, mono-stable, and bi-stable. The experimental outcome shows that nonlinearity can effectively detect the difference of motion techniques. The experimental results of different human movement states confirm the benefits of the uncertain bi-stable human power capture mechanism and the effectiveness of the electromechanical combining design established. The nonlinear mono-stable beam moves in the same way as the straight mono-stable beam in the assessment, but owing to its higher stiffness, its frequency concentration range (13.85 Hz) is moved to the right compared to the linear mono-stable beam, and the displacement of the cantilever beam is reduced. If the velocity is 8 km/h, the mean energy of the bi-stable method extends to the utmost value of 23.2 mu W. It is proved that the nonlinear method can understand the difference in the level of motion technique effectively.

关键词： nonlinear characteristics sports technology level difference

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Optical micro-machined ultrasound sensors with a silicon photonic resonator in a buckled acoustical membrane 20

Optical micro-machined ultrasound sensors with a silicon pho...

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20th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Westerveld, W. J. Leinders, S. M. van Neer, P. L. M. J. Urbach, H. P. de Jong, N. Verweij, M. D. Rottenberg, X. Rochus, V. IMEC Kapeldreef 75 B-3001 Leuven Belgium Delft Univ Technol Dept ImPhys Lorentzweg 1 NL-2628 CJ Delft Netherlands TNO Oude Waalsdorperweg 63 NL-2597 AK The Hague Netherlands

ISBN: (纸本)9781538680407

Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up- or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary for the design of robust and sensitive sensors.

关键词： Conferences microelectronics Micromechanical devices

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Mechanical modeling study for fan-out wafer level package parameters to enhance BGA TCoB life

Mechanical modeling study for fan-out wafer level package pa...

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Electronics Packaging Technology Conference (EPTC)

作者： Rathin Mandal Chai Tai Chong Institute of Microelectronics 2 Fusionopolis Way #08-02 Innovis Singapore

ISBN: (纸本)9781665416207

Fan-Out Wafer Level Package (FOWLP) is experiencing a significant growth due to its thinner thickness, higher I/Os in smaller chip area, better thermal and electrical performance. Due to the shorter, finer and simpler interconnection as compare to flip chip, FOWLP shows superior performance. On the other hand this package is vulnerable due to its higher warpage and package stress concentration. This paper will explore different options to enhance board level reliability performance during temperature cycling for FOWLP. The mechanical simulation has been performed for board level temperature cycling reliability test on a uniform ball pitch, with/without UBM (under bump metallization), BGA with underfill, SACQ (bismuth bearing SnAgCu alloy) solder material and different package design factors (pad diameter, solder resist opening, silicon chip thickness, BGA height, etc). Our aim from this mechanical simulation is to find ways to enhance TCoB (temperature cycling on board) solder joint life performance for FOWLP to be used for antenna-in-package (AiP) automotive radar application. Among the different package parameters, UBM, SACQ solder, solder resist opening and larger BGA height are the few packaging parameters which significantly enhancing the BGA solder joint life. The most noticeable factor bismuth bearing SACQ shows more than 2x performance improvement whereas underfilling the BGA layer in the FOWLP package reduces solder join life significantly.

关键词： Semiconductor device modeling Temperature Thermomechanical processes Resists Bismuth Reliability engineering Silicon

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simulation of Ternary CMOS Schemes for Many-Valued Logic Systems 31

Simulation of Ternary CMOS Schemes for Many-Valued Logic Sys...

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IEEE 31st International Conference on microelectronics (MIEL)

作者： Krasnyuk, A. A. Prozorova, A. G. Russian Acad Sci Sci Res Inst Syst Anal Nakhimovsky Pr 36-1 Moscow 117218 Russia Natl Res Nucl Univ MEPhI Moscow Engn Phys Inst Kaslurskoe Sh 31 Moscow 115409 Russia

ISBN: (纸本)9781728134192

Of interest is the possibility of implementing many-valued logic systems using traditional CMOS tecluiologies. We considered an example of the implementation of three-valued logic elements based on symmetric 3vL, logic using the values {-,0,+}, {-1.0, +1}, {1,0,1}, {i, 0, 1} etc. From the totality of obtained results, it can be assumed that ternary CMOS logic can be fully implemented according to norms of 28-180 mu with minimal changes for design rules.

关键词： Transistors Solid modeling Switching circuits Semiconductor device modeling Inverters Standards Resistance

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