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IEEE 17th International Conference on the Experience of designing and Application of CAD Systems (CADSM)

作者： Belej, Olexander Nestor, Natalia Artyshchuk, Iryna Spas, Nataliia Lviv Polytechn Natl Univ Dept Comp Aided Design Lvov Ukraine

ISBN: (纸本)9798350310856

Connection and routing parameters of wireless sensor networks are considered for static topologies and uniform distribution of nodes. Most of the studied models do not take into account the parameters of message connectivity and their delivery time between unevenly distributed nodes. in the proposed study, models of connectivity analysis and message delivery between unevenly distributed nodes are developed. Models of wireless sensor networks with uniform and normal distribution of nodes and research on the network connectivity parameter for these models are proposed. Network models with different types of distributions are built based on the Erdosh-Rani random graph model, which allows describing of the connectivity of wireless sensor networks as the connectivity of a random graph, that is, to determine the connectivity of wireless sensor networks with the probability of finding the distance between two vertices of the graph. simulation models with a uniform and normal distribution of nodes are implemented to investigate the probability of network connection. The choice of these types of distribution is explained by possible real distributions of nodes in the studied area.

关键词： information system wireless sensor network network model multimodal distribution of nodes simulation model graph vertices

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Applying Machine Learning Methods to Signal Integrity Analysis

Applying Machine Learning Methods to Signal Integrity Analys...

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2024 Ivannikov Open Conference, ISPRAS 2024

作者： Zhigulin, Alexey Rogozhinskiy, Mikhail Solovyev, Roman Telpukhov, Dmitriy Levchenko, Nikolay Stempkovskiy, Alexander Pereverzev, Leonid AlphaCHIP LLC Dept. of Automation of Design of Integrated Circuits Moscow Russia AlphaCHIP LLC Dept. of Design of Integrated Circuits Moscow Russia AlphaCHIP LLC Innovation Activities Moscow Russia AlphaCHIP LLC Deputy General Director for Research Moscow Russia NRC 'Kurchatov Institute' Department for Design Problems in Microelectronics Moscow Russia AlphaCHIP LLC Moscow Russia

ISBN: (纸本)9798331526023

Voltage spikes caused by signal switching in adjacent circuits can lead to false switching and failures in integrated circuits. To identify such risks, signal integrity (SI) analysis is performed by extracting parasitic RC networks, followed by SPICE simulation or application of analytical methods. However, this process is time-consuming. This research proposes using machine learning methods to rapidly and accurately predict the results of SI analysis without the need for computationally expensive modeling. It accelerates SI analysis a lot with low accuracy losses. Also, this paper introduces new reduction model for victim-aggressor pair that is more accurate than previously used. © 2024 IEEE.

关键词： Adversarial machine learning

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Analysis and modeling of Non-ideal Effects in SAR ADC 15

Analysis and Modeling of Non-ideal Effects in SAR ADC

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15th IEEE International Conference on ASIC, ASICON 2023

作者： Zeng, Yaxin Xu, Hao Feng, Xi Yan, Na Fudan University State Key Laboratory of Integrated Chip and Systems Shanghai China Beijing Smartchip Microelectronics Technology Co. Ltd Beijing Smartchip Semiconductor Technology Co. Ltd Beijing China

ISBN: (纸本)9798350312980

For high resolution SAR ADC, the noise and distortion will significantly degrade the performance, thus should be considered carefully during design. This paper presents a behavioral modeling of SAR ADC in Simulink. The model includes the performance limitations such as clock jitter, capacitor mismatch, sampled KT/C noise for switches, noise and offset of comparator and S/H on-resistance distortion. The simulation results of the proposed model provide guidance in choosing the circuit structure and determine spec breakdown of each block in the SAR ADC, which increases the design efficiency with fast design iterations. © 2023 IEEE.

关键词： ADC Behavioral-modeling SAR Simulink

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LEDs Lifetime Prediction modeling: Thermomechanical simulation for SAC305 and SAC105 25

LEDs Lifetime Prediction Modeling: Thermomechanical Simulati...

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25th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2024

作者： Akhtar, Mohd Zubair Schmid, Maximilian Zippelius, Andreas Elger, Gordon Technische Hochschule Ingolstadt Esplanade 10 Ingolstadt85049 Germany

ISBN: (纸本)9798350393637

The challenge of predicting the reliability of solder joints in high-power LED packages by Finite Element Analysis (FEA) is crucial for the automotive industry. Focusing on the thermo-mechanical stresses between LED package and the PCB, *** aluminum insulated metal substrate (Al-IMS), this paper analyzes the crack formation in the solder joints for seven different ceramic-based LED packages. The model is validated by data from a large experimental study, covering typical two pad and three pad footprint design for LED package and five solder materials. The data set contains experimental data of nearly 1,800 LED packages, including over 40,000 Transient Thermal analyses (TTA) and 9,000 Scanning Acoustic Microscopy (SAM) measurements. The paper investigates different post-processing approaches related to FEA simulations for surfacemounted devices (SMD) LED assemblies, recognizing the limitations of approaches used for Ball Grid Array (BGA) packages due to the large difference in geometry and pad layout. The primary goal of the FEA model is to correctly predict the reliability of different pad designs, *** or three pad footprints for different solders and develop the universal lifetime model. The methodology includes detailed thermomechanical simulations via Ansys. The paper compares the behavior of SAC305 and SAC105. Each LED package undergoes five thermal cycles, ranging from-40 °C to 125 °C, to assess accumulated creep strain. The Coffin Manson model is utilized for the lifetime prediction of the solder joint. To the best of the author s knowledge, the paper presents for the first time a model which is validated for different pad designs and answers the question: Is a threepad or a two-pad preferable for solder joint reliability? The results show a good agreement, i.e. R 2=96% for critical path averaging, of simulation outcomes for ceramic LED packages with thick film metallization. However, some variability is noted for ceramic LED packages with thin film ce

关键词： Computer Aided design (CAD) Finite Element Analysis (FEA) LED Lifetime Post Processing Prediction SMD Solders

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Characterization and modeling of Cure-Induced Thermo Mechanical Properties and Chemical Shrinkage of Epoxy Resins 25

Characterization and Modeling of Cure-Induced Thermo Mechani...

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25th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2024

作者： Kasinikota, Venu Prakash Muehleisen, Wolfgang Grinschgl, Markus Steiner, Alexander Hasil, Siegfried Lang, Margit Christa Leoben8700 Austria Institute of Mechanics Montanuniversität Leoben Leoben8700 Austria Villach9524 Austria GIPRO GmbH Peggau8120 Austria

ISBN: (纸本)9798350393637

Epoxy resins are widely used in molding electrical insulators and electronic components due to their superior dielectric properties and mechanical strength. However, due to poor process control along with the complex geometry of their components, parts can entail air pockets, cracks, or deformations driven by residual stresses. To address these challenges, this research uses the Computational Fluid Dynamics (CFD) software Autodesk Moldflow Synergy 2023 to visualize epoxy resin flow behavior and predict the curing behavior as it flows through the mold using respective models. When simulating the mold-filling behavior, comprehensive thermo-mechanical data are required for both uncured and cured states of cycloaliphatic epoxy resins. Therefore, it was crucial to thoroughly characterize the material to obtain precise material parameters for using them in simulations, as these parameters play a vital role in the accuracy of the simulations. Python-based formulations of the Prout-Tompkins cure kinetic and Cross-Castro-Macosko viscosity models are used to comprehensively analyze the flow front and curing behavior during an Automatic Pressure Gelation (APG) process. This research provides valuable insights into the behavior of epoxy resin when molded in complex scenarios. It enables the design of optimized molds while allowing for fast and efficient evaluation and optimization of process parameters, ultimately reducing high rejection rates as safety critical parts, like insulators, need to be flawless. © 2024 IEEE.

关键词： cure kinetics process simulation reactive-viscosity modeling Thermoset material characterization

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Development, Optimization, and Application of ML based modeling of Printed VO2RF Switch

Development, Optimization, and Application of ML based Model...

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2023 International Conference on microelectronics, ICM 2023

作者： Khusro, Ahmad Hashmi, Mohammad Chaudhary, Muhammed Akmal Iit Kanpur Department of Electrical Engineering Kanpur India Nazarbayev University School of Engineering and Digital Sciences Astana Kazakhstan Ajman University College of Engineering and Information Technology Ajman United Arab Emirates

ISBN: (纸本)9798350380828

This paper proposes a globally optimized behavioral modeling algorithm using cascaded feed-forward neural network in conjugation with Particle Swarm optimization (PSO) for fully printed VO2 based RF switches. The proposed model makes use of varied set of operating conditions (geometric dimensions and operating temperature) over a frequency range of 0.01 to 33 GHz. The modeling algorithm enables flexibility in selecting the optimized hyperparameters such as number of neurons in each hidden layer, and activation function at each layer. The developed model is tested for both interpolation and frequency extrapolation cases up to 40 GHz to establish the validity and robustness of the modeling algorithm. An excellent agreement between the measured and the modeled performance over a broad frequency range demonstrates a good generalization capability and successful model development strategy. The proposed model is then evaluated within a commercial circuit simulator (Keysight's ADS) to demonstrate usefulness in RF circuit design. © 2023 IEEE.

关键词： Circuit simulation

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A Physics-Informed Recurrent Neural Network for RRAM modeling

A Physics-Informed Recurrent Neural Network for RRAM Modelin...

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2023 International Symposium of Electronics design Automation, ISEDA 2023

作者： Sha, Yanliang Lan, Jun Li, Yida Chen, Quan School of Microelectronics Southern University of Science and Technology Shenzhen China

ISBN: (纸本)9798350304510

Extracting behavioural models of RRAM devices has been challenging due to their unique 'memory' behaviours, for which well-established modeling frameworks and systematic parameter extraction processes have not been available. In this work, we propose a physics-informed recurrent neural network (PiRNN) methodology to generate behavioural models of RRAM devices from practical measurement/simulation data. The proposed framework can faithfully capture the evolution of internal state and its impacts on the output. A series of modifications informed by the RRAM device physics are proposed to enhance the modeling capabilities. Integration strategy with existing SPICE-type simulators is also developed. Numerical experiments with real RRAM devices data demonstrate the feasibility and advantages of the proposed methodology. © 2023 IEEE.

关键词： Recurrent neural networks

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modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

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Chinese Physics B 2021年第2期30卷 457-461页

作者： Tao Fang Ling-Qi Li Guang-Rui Xia Hong-Yu Yu School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Department of Materials Engineering the University of British ColumbiaVancouverBritish ColumbiaV6T1Z4Canada

With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are *** simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N ***,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition *** simulations show that the device still has good properties after adding this layer.

关键词： technology computer-aided design(TCAD) gallium oxide(Ga2O3) gallium nitride(GaN) Schottky barrier diode(SBD)

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TCAD modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation

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Russian microelectronics 2022年第7期51卷 545-551页

作者： Petrosyants, K.O. Silkin, D.S. Popov, D.A. Li, Bo Zhang, Xu National Research University Higher School of Economics Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia Institute of Microelectronics Chinese Academy of Sciences Beijing China

Abstract: The transition from planar MOSFET structures to 3D FinFET structures provides resistance to various types of radiation. However, the characteristics of irradiated devices created at different manufacturers differ significantly, and it is rather difficult to explain the dependence of the radiation resistance of FinFE-T structures on variations in their physical and topological parameters and electrical modes. We develop a radiation version of the TCAD model of a FinFET MOSFET on bulk silicon. Additional semiempirical radiation dependences specific for FinFET structures for the effective mobility of charge carriers and the concentration of traps in the volumes of SiO2 and HfO2 oxides and at the oxide–silicon interfaces are introduced in the basic model of a nanometer MOSFET. The model is implemented in the Sentaurus Synopsys TCAD environment. The model is validated on a test set of FinFET structures with a channel length of 60 to 7 nm without irradiation and in the range of gamma irradiation doses up to 1 Mrad. A comparison of the static current-voltage characteristics obtained by simulation with the experimental results showed an error not exceeding 15%. © 2022, Pleiades Publishing, Ltd.

关键词： Ionizing radiation

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A High Isolation Dual-band WiFi MIMO Antenna design 4

A High Isolation Dual-band WiFi MIMO Antenna Design

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2022 4th International Conference on modeling, simulation, Optimization and Algorithm, ICMSOA 2022

作者： Yuan, Kang Nie, Qilei Zhang, Songtao Peng, Lihu Wang, Qinghai Liu, Geng Smart Shine Microelectronics Technology CO. Ltd Beijing China

In this paper, a dual-band WiFi MIMO antenna with high isolation is designed. The antenna is F-Type structure, and the resonant points of high frequency and low frequency are mainly controlled by two branches of 'F'. In order to improve the isolation between antennas, multiple symmetrically distributed slots are introduced on the ground, by adjusting the size and spacing of each group of slots, the effect of 2.4GHz & 5G dual-band decoupling is realized. Through HFSS simulation and optimization, antenna in frequency of 2.4-2.5GHz & 5.2-5.825GHz, S11 meet-10db bandwidth requirements, the isolation between the two ports is higher than 25dB, meet the design requirements. © 2023 Institute of Physics Publishing. All rights reserved.

关键词： Slot antennas

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