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17th IEEE International Conference on Emerging eLearning Technologies and Applications, ICETA 2019

作者： Nagy, Lukas Arbet, Daniel Kovac, Martin Potocny, Miroslav Sovcik, Michal Stopjakova, Viera Institute of Electronics and Photonics Faculty of Electrical Engineering and Information Technology Slovak University of Technology Bratislava Slovakia

ISBN: (纸本)9781728149677

This paper contains a description of EKV transistor model properties and its application in ultra low-voltage and/or low-power integrated circuit design. We also discuss and investigate the suitability of the model for rather unconventional bulk-driven approach to circuit design. Moreover, a modified EKV model v2.6 parameter extraction sequence is proposed, where deeper understanding of the model itself and better overall correlation between the measured data and simulation results is introduced. The obtained knowledge about the extended extraction procedure has been directly incorporated into the curriculum of IC design-related classes and student projects, since modeling and simulation belong to the key education activities in microelectronics field. © 2019 IEEE.

关键词： microelectronics

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Electromigration Model for Platinum Hotplates

Electromigration Model for Platinum Hotplates

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International Conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Lado Filipovic Institute for Microelectronics Technische Universität Wien Vienna Austria

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

Microheaters are frequently applied in the design of semiconductor metal oxide gas sensors in order to heat the sensing layer and induce the surface chemical reactions which promote molecular adsorption. One of the most common materials used for the microheater layer is platinum. In this manuscript, a model for electro-migration is developed and implemented to study vacancy dynamics and the thereby-induced stress in platinum-based microheaters for gas sensor applications. The model is then applied to study the impact of the individual components which contribute to vacancy transport, including electro-migration, thermo-migration, and stress-migration. We find that these structures have very high thermal gradients, making the impact of thermo-migration component higher than the electro-migration component in the early stages of vacancy transport, unlike in copper-based interconnects. Therefore, improving the temperature uniformity of the microheater design should lead to a longer operating time before failure.

关键词： Semiconductor device modeling Heuristic algorithms Platinum Semiconductor process modeling Acceleration Gas detectors Stress

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Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction 15

Thermal Stable and Fast Perpendicular Shape Anisotropy Magne...

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15th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2019

作者： Wang, Guanda Zhang, Yue Huang, Zhe Wang, Jinkai Zhang, Kun Zhang, Zhizhong Zhang, Youguang Zhao, Weisheng Beihang University Fert Beijing Research Institute BDBC School of Microelectronics Beijing100191 China

ISBN: (纸本)9781728155203

Spin transfer torque magnetic random access memory (STT-MRAM) has shown great potential in building future universal memory. However, the core of STT-MRAM, conventional perpendicular magnetization anisotropy (PMA) magnetic tunnel junction (MTJ) is facing challenges in keeping high thermal stability factor (ΔE), which is essential for reliable data storage. Despite solving the problem of ΔE, perpendicular shape anisotropy (PSA) MTJ still has drawbacks of slow STT switching and high breakdown risk. In this paper, we proposed a spin obit torque (SOT)-assisted-STT switching mechanism for PSA MTJ. A SIPCE model of PSA MTJ is developed. This model shows great agreements with experimental measurements. Besides, it is a very useful tool for circuit design and simulation. This model shows ΔE of PMA MTJ can be up to 70. Thanks to SOT-assisted-STT switching mechanism, the switching time can be greatly reduced. At last, simulations of non-volatile master flip-flop (NVMFF) circuit is performed to validate the device modeling. © 2019 IEEE.

关键词： Flip flop circuits

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Power Module Ceramic Substrates: mechanical characterization and modeling

Power Module Ceramic Substrates: mechanical characterization...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Alessandro Sitta Marco Renna Angelo Alberto Messina Giuseppe Mirone Giuseppe D’Arrigo Michele Calabretta ADG R&D STMicroelectronics Catania Italy Italy Public Affairs STMicroelectronics Catania Italy Dipartimento di Ingegneria Civile ad Architettura Università degli Studi di Catania Catania Italy IMM CNR Catania Italy

ISBN: (数字)9781728160498

ISBN: (纸本)9781728160504

In this work the warpage of a power modules ceramic substrates due to temperature variation has been numerically calculated. It has been used a not linear finite element model, which account the experimentally characterized material properties, including the copper elastoplasticity. Model results have been compared with dedicated interferometric measurements to validate the model. As application example, it has been calculated the benefit in terms of temperature warpage realized with a different substrate design option.

关键词： Substrates Copper Temperature measurement Ceramics Reliability Numerical models microelectronics

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modeling and simulation of Coverage Problem in Geometric design Systems 15

Modeling and Simulation of Coverage Problem in Geometric Des...

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15th IEEE International Conference on the Experience of designing and Application of CAD Systems (CADSM)

作者： Yakovlev, Sergiy Kartashov, Oleksii Komyak, Valentina Shekhovtsov, Sergiy Sobol, Oleksandr Yakovleva, Iryna Natl Aerosp Univ Kharkiv Aviat Inst Dept Math Modeling & Artificial Intelligence Kharkiv Ukraine Natl Univ Civil Def Ukraine Dept Phys & Math Disciplines Kharkiv Ukraine Kharkiv Natl Univ Internal Affairs Dept Informat Technol Kharkiv Ukraine Natl Univ Civil Def Ukraine Dept Management & Org Field Civil Def Kharkiv Ukraine Kharkiv Natl Univ Municipal Econ Dept Appl Math & Informat Technol Kharkiv Ukraine

ISBN: (纸本)9781728100531

A class of problems of covering an area with a set of geometric objects of a given shape is considered. To formalize the task, the concept of a configuration space of geometric objects is used, the generalized variables of which are metrical and placement parameters. A mathematical model of the problem as a nonlinear optimization problem is constructed and its properties are investigated. The practical application of the proposed results is described by the example of solving the problem of determining the location of fire stations with the aim of ensuring the fire safety of settlements.

关键词： geometric object coverage configuration space optimization fire safety

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微带电路无源互调干扰问题综述

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太赫兹科学与电子信息学报 2023年第3期21卷 263-270页

作者：赵小龙贺永宁崔万照西安交通大学电子与信息学部微电子学院陕西西安710049 西安交通大学西安市微纳电子与系统集成重点实验室陕西西安710049 中国空间技术研究院西安分院空间微波技术重点实验室陕西西安710100

无源互调(PIM)干扰是微波射频电路面临的主要可靠性问题之一,随着微波射频电路小型集成化发展,微带电路无源互调效应研究开始受到工业界和学术界广泛关注。研究微带电路无源互调机理、评估和抑制方法,对于制备小型化、高可靠性微波射频... 详细信息

无源互调(PIM)干扰是微波射频电路面临的主要可靠性问题之一,随着微波射频电路小型集成化发展,微带电路无源互调效应研究开始受到工业界和学术界广泛关注。研究微带电路无源互调机理、评估和抑制方法,对于制备小型化、高可靠性微波射频电路具有重要价值。与腔体部件相比,微带电路的非线性往往是分布的,且与基材选择、制造工艺和器件结构等方面都有重要关系,因此研究难度更大。近年来虽然关注微带电路互调的研究越来越多,但依然难以直接指导微带电路的实际设计。基于此,本文系统论述了近年来微带电路无源互调领域的研究情况,包括非线性机理、仿真建模以及测试诊断等方面,为未来更深入地研究微带电路无源互调效应提供参考。

关键词：微带电路无源互调非线性电热耦合介电非线性

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Identification of influencing PCB design parameters on thermal performance of a QFN package

Identification of influencing PCB design parameters on therm...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Kai Hollstein Lintao Yang Yuan Gao Kirsten Weide-Zaage Workgroup reliability: simulation & risk analysis Appelstra13e 4 Institute for Microelectronic Systems Hannover

ISBN: (数字)9781728160498

ISBN: (纸本)9781728160504

QFNs are electric components that are producing a substantial amount of heat during operation due to significant power loss. Resulting elevated temperatures can lead to critical damage of the chip and the package which could cause a loss of functionality. Therefore, controlling the maximum temperature within the package is crucial. Using thermal vias embedded in the PCB underneath the QFN is a common approach to control the heat flow. In this paper a simulation approach is presented using 3D-Finite-Element-modeling to identify the impact of influencing parameters on the temperature distribution within the package. First, a review about relevant literature is given. This paper differs from the available literature by looking more detailed in the 3D-modelling aspect of thermal via designs. It is focused on a simulation approach to determine the temperature distribution within the soldered component and the PCB. Therefore, the build-up of the model is explained and applied material properties are given. Results for the determined temperature distribution for the reference system are presented. Furthermore, geometrical parameters are varied to identify main influencing parameters.

关键词： Heating systems Temperature distribution Thermal analysis Electronic packaging thermal management Thermal conductivity Copper microelectronics

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Signal Integrity simulation design and Analysis of Electronic Article Surveillance PCB for RFID applications

Signal Integrity Simulation Design and Analysis of Electroni...

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IEEE International Conference of Safety Produce Informatization (IICSPI)

作者： Muhammad Noaman Zahid Jianliang Jiang Heng Lu Rashid Ali Deborah Eric Shahrukh Khan Hengli Zhang School of Optics and Photonics Beijing Institute of Technology Beijing China Fert Beijing Institute BDBC School of Microelectronics Beihang University Beijing China

ISBN: (数字)9781728177380

ISBN: (纸本)9781728177397

The modern electronics industry is working for miniaturization of electronic devices will ultimately call for the dense design of PCB, shrinking geometry of ICs and high speed interference. Mostly communication devices operate on low power and high frequency. As shrinking of the silicon wafer area significantly increases the interconnection problems. Crosstalk, impedance mismatch, reflection, skew, and propagation delay are major issues that are caused by interconnection and limit the performance of the high-speed design. This paper presents Signal Integrity (SI) simulation design analysis by using Cadence Allegro SPB Software. For this purpose, Input/Output Buffer Information Specification (IBIS) models are assigned to simulate reflection and crosstalk. Signal integrity analysis is performed and improvement in simulation design is presented which enhances the design intuitively and validates high speed PCB analysis.

关键词： Performance evaluation Analytical models Crosstalk Electromagnetic compatibility Reflection Integrated circuit modeling Signal integrity

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Performance and Variability Trade-offs of CMOS PTAT Generator Topologies for Voltage Reference Applications

Performance and Variability Trade-offs of CMOS PTAT Generato...

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Symposium on Integrated Circuits and Systems design (SBCCI)

作者： Vanessa F. de Lima Rodrigo Ataide Sergio Bampi Hamilton Klimach Microelectronics Graduate Program UFRGS Porto Alegre RS Brazil Informatics Institute UFRGS Porto Alegre RS Brazil Electrical Engineering Department UFRGS Porto Alegre RS Brazil

ISBN: (数字)9781728196251

ISBN: (纸本)9781728196268

This work presents the analysis, design, and performance evaluation of three usual CMOS proportional to absolute temperature (PTAT) voltage generators, with emphasis on variability effects. Minimization or compensation of the main error sources, such as fabrication variability and intrinsic non-linearities, is an important design challenge required to increase the precision and robustness of a voltage reference. The CMOS PTAT topologies are analytically described and design methodologies for PTAT circuits in subthreshold are presented. The compromises between design conditions and resulting performance are evaluated through simulation for these three PTAT generators, including linearity with temperature, temperature coefficient (TC), and variability impact. Monte-Carlo simulations demonstrated the sensitivity of each topology to fabrication variability, showing that the self-cascode MOSFET structure presents the best accuracy of TC, nominal PTAT voltage, and linearity with temperature.

关键词： Topology Generators MOSFET Temperature sensors Integrated circuit modeling Threshold voltage Semiconductor device modeling

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SPICE modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures

SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at De...

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International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)

作者： Mamed R. Ismail-zade Konstantin O. Petrosyants Lev M. Sambursky Xu Zhang Bo Li Jiajun Luo Zhengsheng Han National Research University Higher School of Economics (Moscow Institute of Electronics and Mathematics) Moscow Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Russia Institute of Microelectronics of Chinese Academy of Sciences Beijing China

A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based on the standard models available in the library of SPICE models and introducing smooth analytical functions continuous with temperature for the model parameters. A unified automated procedure for model parameter extraction is presented for all the models, providing an acceptable accuracy of accounting for electrical and temperature effects for practical applications in the temperature range from room temperature to 4 K.

关键词： Semiconductor device modeling Temperature distribution Analytical models MOSFET Computational modeling Cryogenics SPICE

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