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A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit designs

A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit D...

International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD)

作者： Feng Zhang Linan Li Qiang Huo Cong Fang Wenqiang Ba Key Laboratory of Microelectronics Devices and Integrated Technology Chinese Academy of Sciences Beijing China School of Electronic and Information Engineering Beijing Jiaotong University Beijing P.R. China

ISBN: (纸本)9781728112022

A resistive random access memory device based on HfO 2 with outstanding nonvolatility is fabricated. A dynamic Verilog-A model obeying the electrochemical metallization conductive filament mechanism is demonstrated. The fluctuation of conductive filament growth is added to this model, and the model is verified by DC voltage scanning. The simulation and experimental data are compared using data processing software. Experimental results verify the good electrical characteristics of the RRAM device. modeling of the fluctuations of RRAM devices provides guiding significance to the design of peripheral circuits.

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Implementation of 1T1R-based OxRRAM Memristor Model for Circuit design and simulation

Implementation of 1T1R-based OxRRAM Memristor Model for Circ...

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International Conference on Control, Automation and Diagnosis (ICCAD)

作者： Khaoula Mbarek Faten Ouaja Rziga Sami Ghedira Kamel Besbes Microelectronics & Instrumentation Laboratry University of Monastir Monastir Tunisia Centre for Research on Microelectronics & Nanotechnology Sousse Technology Park Microelectronics & Instrumentation Laboratry FSM University of Monastir Monastir Tunisia

ISBN: (数字)9781728122922

ISBN: (纸本)9781728122939

The new emergent memristor can provide non-volatile memory storage, but also an intrinsic computation for matrix-vector multiplication, ideal for low-power, high-speed data analysis accelerators carried out in memory. Several memristor models have been investigated up to now. Although, a compact model needs to be flexible, general, and sufficiently accurate. In this paper, a comparative analysis of a proposed Verilog-A and SPICE memristor models is discussed, in order to elaborate an appropriate model for implementation in CMOSbased circuit applications. An analysis of a Verilog-A memristor model is discussed in order to check the model behavior in ITIR OxRRAM configuration and validating the comparison at circuit level. Two cases are considered using this cell either as a PROM or as an EEPROM. Hence, this analysis generated using Spectre circuit simulator. Our simulation results carry the desired nonlinear memristor fingerprint, and the applicability to fit and simulate different switching behaviors. These results are verified by both electrical and experimental characterization data.

关键词： Memristors Integrated circuit modeling Hardware design languages Mathematical model SPICE Computational modeling Semiconductor device modeling

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A CMOS OxRAM-Based Neuron Circuit Hardened with Enclosed Layout Transistors for Aerospace Applications

A CMOS OxRAM-Based Neuron Circuit Hardened with Enclosed Lay...

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IEEE Symposium on On-Line Testing (IOLTS)

作者： Pablo Ilha Vaz Patrick Girard Arnaud Virazel Hassen Aziza Laboratory of Informatics Robotics and Microelectronics of Montpellier (LIRMM) University of Montpellier/CNRS Montpellier France IM2NP laboratory Aix-Marseille University/CNRS Marseille France

ISBN: (数字)9781728181875

ISBN: (纸本)9781728181882

Brain-inspired computing architectures, brought by Artificial Neural Networks (ANNs), are an attractive solution to reduce the energy consumption of the conventional von Neumann's computation, with an excellent parallel processing capability. Therefore, critical applications, such as Space & Satellite, which impose severe constraints in terms of power consumption and computing efficiency, are excellent candidates to embed such networks. Nonetheless, integrated circuits operating during long-term and cumulative exposure to incidence levels of ionizing radiation may have their physical components degraded, thus drastically reducing their reliability and expected lifetime. A possible solution to enhance the radiation hardening characteristics of a conventional bulk CMOS device is to use the non-standard gate geometry referred to as Enclosed Layout Transistor (ELT). In this work, we propose to harden the design of an existing OxRAM-based neuron circuit [1] through the inclusion of ELTs, i.e., to improve the radiation hardening characteristics of a preexistent convenient neuron circuit topology by using the enclosed gate geometry for the n,pMOS devices. Electrical simulations, considering a standard commercial bulk CMOS fabrication process, in a 1SO nm technology, have been carried out to validate our proposed design. The simulation results, supported by the analysis of former works regarding the incidence of ionizing radiation in OxRAM and ELTs, indicate that the proposed hardened neuron circuit is a feasible solution to embed neuromorphic computing in aerospace applications.

关键词： Neurons Radiation hardening (electronics) Ionizing radiation Standards Logic gates Semiconductor device modeling Computer architecture

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A Novel Multi-level CMOS Switching Mode Amplifier for Mobile Communication Signals 14

A Novel Multi-level CMOS Switching Mode Amplifier for Mobile...

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15th International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th Conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Bieg, Robert Schmidt, Martin Groezing, Markus Berroth, Manfred Univ Stuttgart Inst Elect & Opt Commun Engn D-70569 Stuttgart Germany

ISBN: (纸本)9781538653869

This paper presents simulation results of a CMOS switching mode power amplifier (SA) in a 65 nm technology with adjustable output voltage swing. The output stage is built in a stacked design to prevent dielectric breakdown of the transistors. Inverters at the top and bottom of the stack provide the supply voltage for the stack. The configuration offers a variable output voltage swing between one, two or three times the nominal transistor supply voltage. This paper demonstrates the advantages over a power amplifier with fixed output levels for signals with high peak to average output power ratio (PAPR).

关键词： Signal to noise ratio Transistors Peak to average power ratio Power generation Decoding simulation Integrated circuit modeling"

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Analysis and simulation of chopper stabilization techniques applied to Delta-Sigma converters 15

Analysis and simulation of chopper stabilization techniques ...

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作者： Catania, A. Ria, A. Del Cesta, S. Piotto, M. Bruschi, P. Univ Pisa Dipartimento Ingn Informaz Pisa Italy

ISBN: (纸本)9781538651537

MATLAB/Simulink modeling of offset and flicker noise in Delta-Sigma modulators has been developed, providing a fast tool for the estimation of ADC performances. Since high accuracy and resolution are fundamental in sensor applications, a brief analysis of the main noise sources in second order Delta-Sigma modulators is presented, together with the typical solutions found in the literature. Generalization of system-level chopper technique for the rejection of the converter overall offset and low-frequency noise has been proposed and their effectiveness is evaluated by means of high-level simulations.

关键词： Delta-sigma ADC sensor applications flicker noise MATLAB modeling system-level chopper

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modeling and simulation Metamaterail Effects on Radiation Pattern Of Microstrip Antenna 30

Modeling and Simulation Metamaterail Effects on Radiation Pa...

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30th International Conference on microelectronics (ICM)

作者： Emhemmed, Adel Kriama, Abdulbast Almodi, Mahmoud Rhoma, Ali Univ Tripoli Elect & Elect Engn Dept Tripoli Libya Univ Zawia Fac Engn Zawia Libya

ISBN: (纸本)9781538681671

This paper presents effect of metamaterail on the radiation pattern of microstrip antenna at 60GHz band. A new design of metamaterial antenna based Square Split Ring Resonator and a conventional microstrip patch antenna both designed using gallium arsenate dialectical substrate to study the effect of ration pattern of antenna. The metamaterial antenna is made by using a single layer of metamaterial reflecting surface which is design from array of squared split ring resonator (SRR) printed on a GaAs dielectric. The height of reflecting surface is adjusted to improve the radiation pattern performance. The results show that the gain of the antenna radiation pattern with metamaterial reflecting surface is increased by 1.2 iI compared with conventional patch antenna without the metamaterial superstrate without distorting the antenna resonance frequency. High Frequency Structure Simulator (HFSS) was used to simulate and analysis the metamaterial substrate and antenna configurations.

关键词： Metamaterial SRR microstrip patch antenna Lens antenna

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modeling and simulation of Digital Phase-Locked Loop in Simulink 15

Modeling and Simulation of Digital Phase-Locked Loop in Simu...

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作者： Parkaban, N. Robens, M. Grewing, C. Christ, V. Liebau, D. Muralidharan, P. Nielinger, D. Yegin, U. Zambanini, A. van Waasen, S. Forschungszentrum Juelich GmbH Elect Syst Cent Inst ZEA2 Julich Germany Univ Duisburg Essen Fac Engn Commun Syst Duisburg Germany Forschungszentrum Juelich GmbH Juelich Aachen Res Alliance Forces & Matter Expt Julich Germany

ISBN: (数字)9781538651537

ISBN: (纸本)9781538651537

This paper presents a high-level model for a digital phase-locked loop implemented in Simulink. This modeling enables the flexible and fast estimation of the design behavior and parameters before transistor-level implementation. The design includes a digital controlled oscillator that is defined using a linear s-domain model. Furthermore, the design of a time-todigital converter based on oversampling and noise shaping is introduced to increase the effective resolution of the block. The simulation results of locking process, stability and phase noise verify the functionality of the model.

关键词： Simulink digital phase-locked loop digital controlled oscillator time-to-digital-converter

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System Level simulation framework for the ASICs development of a novel particle physics detector 14

System Level simulation framework for the ASICs development ...

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作者： Caratelli, Alessandro Scarfi, Simone Ceresa, Davide Kloukinas, Kostas Leblebici, Yusuf Ecole Polytech Fed Lausanne LSM Lausanne Switzerland CERN Geneva Switzerland

ISBN: (纸本)9781538653869

The simulation of the passage of particles through matter using Monte Carlo methods is broadly used in the development of particle detectors for high energy physics experiments. To develop the readout electronics for the Compact Muon Solenoid (CMS) experiment at CERN, and to assist the design of the on-detector ASICs, a simulation framework was build capable to link the physics Monte Carlo simulations platforms with an industry standard EDA simulation tools. This contribution focuses on the implementation of the simulation framework based on the System Verilog language and the Universal Verification Methodology (UVM). The simulation results that guided the development of the ASICs and the choice of the final architecture are presented.

关键词： simulation methods and programs Front-end electronics for particle detectors ASICs verification High Energy Physics UVM

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Finite Element simulation of Frequency Response of MEMS-Microphone

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Russian microelectronics 2018年第3期47卷 211-216页

作者： Grigor’ev, D.M. Godovitsyn, I.V. Amelichev, V.V. Generalov, S.S. Scientific-Manufacturing Complex Technological Center MIET ZelenogradMoscow oblast124498 Russia

The frequency response of a MEMS microphone is largely dependent on the design and size of the package. The location and size of the acoustic port, the dimensions of the front and back chamber, and the packaging material are of key importance. In this paper we present the results of calculating the frequency response of a MEMS microphone obtained by finite element modeling (FEM) for two main types of packaging with different positions of the acoustic port. The simulation results are analyzed and compared to the measured frequency response of the MEMS microphone. © 2018, Pleiades Publishing, Ltd.

关键词： Frequency response

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A New Surface Potential Based Compact Model for Independent Dual Gate a-IGZO TFT: Experimental Verification and Circuit Demonstration

A New Surface Potential Based Compact Model for Independent ...

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International Electron Devices Meeting (IEDM)

作者： Jingrui Guo Ying Zhao Guanhua Yang Xichen Chuai Wenhao Lu Dongyang Liu Qian Chen Xinlv Duan Shijie Huang Yue Su Di Geng Nianduan Lu Tao Cui Jin Jang Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology IMECAS Beijing China University of Chinese Academy of Sciences Beijing China NCMIS LSEC Academy of Mathematics and Systems Science Chinese Academy of Sciences Beijing China Kyung Hee University Seoul Korea

ISBN: (数字)9781728188881

ISBN: (纸本)9781728188898

For the first time, we proposed a continuous analytical surface potential-based compact model of the independent Dual Gate amorphous In-Ga-Zn-O thin film transistors (IDG a-IGZO TFTs), where percolation conduction, trap-limited conduction (TLC) and variable rang hopping (VRH) transport theories in the extended and localized states are both considered via Schroder method, physically describing the transport mechanism under different conditions of temperature and carrier density. Moreover, a single formulation of front and back surface potentials that is valid and extremely accurate in all operation regimes is developed. Based on the transport theories and surface potential, complete compact model dedicated to IDG TFTs is presented. Furthermore, the threshold compensation effect is also included in this model. To calibrate the model, we fabricated asymmetric dual gate a-IGZO TFTs. The model is validated by an excellent agreement with numerical solutions and experimental results. Finally, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment. A systemically simulation of both ring oscillator (RO) and pixel circuit proves the potential application of this model in circuit design.

关键词： Temperature measurement Solid modeling Temperature distribution Logic gates Thin film transistors Numerical models Integrated circuit modeling

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