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15th International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th Conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Pan, Po-Cheng Huang, Hung-Wen Huang, Chien-Chia Patyal, Abhishek Chen, Hung-Ming Yang, Tsun-Yu Natl Chiao Tung Univ Inst Elect Hsinchu 30010 Taiwan Taiwan Semicond Mfg Co Ltd Hsinchu Taiwan

ISBN: (纸本)9781538651537

In order to generate analog layout in advanced technology, it still remains lots of challenges due to the imprecise estimation of critical performance parameters. We propose an upgraded decision making framework, PEDefer, to decompose existing layout into decisive components for performance estimation. In this work, the objective is to synthesize layout solutions based on the performance estimation of user-defined constraints and existing templates. The constraints of the circuit are priorly tackled in the partition and layout enumeration stage. In addition, we attempt to have partial layout pieces as exchangeable blocks to perform pseudo-post-simulation, thus to put simulation factors in the evaluation during layout enumeration strategy. The experiments show that this flow guarantees valid analog layout results whose performances are closer to netlist-level simulation than manual designed or migrated layouts with minimal overhead.

关键词： Layout Estimation Shape Decision making Routing Performance evaluation"

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Let's make it Noisy: A simulation Methodology for adding Intrinsic Physical Noise to Cryptographic designs 14

Let's make it Noisy: A Simulation Methodology for adding Int...

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作者： Nawaz, Kashif Van Brandt, Leopold Standaert, Francois-Xavier Flandre, Denis Catholic Univ Louvain ICTEAM Inst Louvain Belgium

ISBN: (纸本)9781538653869

Noise in digital circuits for the sake of performance has always been minimized in typical designs. However, for cryptographic applications, increased noise could be beneficial. It can be used effectively to reduce the mathematical SNR (signal-to-noise ratio) further and make it more difficult for the adversary to gather useful information from the side channel leakage data. In this paper, we introduce a methodology to exploit the intrinsic physical noise (i.e. flicker and thermal noise) at the circuit level and use the obtained values in a relevant cryptographic context. Our simulations show that the calculated cryptographic noise values are in close agreement with the noise levels extracted from noisy distributions using transient noise analysis. Consequently, this noise is shown to increase with the number of transistors or the supply voltage.

关键词： Cryptography Transient analysis Transistors Integrated circuit modeling Signal to noise ratio Noise measurement Logic gates"

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A Novel Multiple Membership Function Generator for Fuzzy Logic Systems 15

A Novel Multiple Membership Function Generator for Fuzzy Log...

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作者： Khayatzadeh, Ramin Yelten, Mustafa Berke Istanbul Tech Univ Dept Elect & Commun Engn TR-34469 Istanbul Turkey

ISBN: (纸本)9781538651537

This paper presents a new multiple membership function generator which is capable of forming Gaussian, trapezoidal, triangular, S-shaped, and Z-shaped membership functions. To the best of authors' knowledge, a single circuit that can concurrently generate Gaussian, trapezoidal, and triangular membership functions has not been reported in the literature yet. Proposed circuit is compatible with many fuzzy logic systems requiring different types of membership functions. The circuit is designed using a commercial 0.18 mu m CMOS technology and consumes a total power of 180 mu W. The shapes of each membership function can be modified by properly chosen values of input and reference voltages. Functionality of all membership functions is validated across process corners with additional Monte Carlo analysis where temperature variations are considered, as well.

关键词： Transistors Fuzzy logic Signal generators Delays simulation Monte Carlo methods Power demand"

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A Verilog-A based RRAM Switching Model for simulation and Analysis

A Verilog-A based RRAM Switching Model for Simulation and An...

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International Conference on Control, Automation and Diagnosis (ICCAD)

作者： Faten Ouaja Rziga Khaoula Mbarek Sami Ghedira Kamel Besbes Microelectronics & Instrumentation Laboratry University of Monastir Monastir Tunisia Centre for Research on Microelectronics & Nanotechnology Sousse Technology Park Microelectronics & Instrumentation Laboratry FSM University of Monastir Monastir Tunisia

ISBN: (数字)9781728122922

ISBN: (纸本)9781728122939

In this paper, an analysis of a general memristor model is discussed. This analysis is generated using a proposed Verilog-A model. We prove that this model correlates the experimental characterization data of the HfO2-based OxRRAM memristor device and investigate the characteristics of both bipolar and unipolar memristor behaviors. Our simulation results carry the desired nonlinear memristor fingerprint, and the applicability to fit and simulate different switching behaviors. These results are verified by both electrical and experimental characterization data. Hence, these results suggest that the Verilog-A model is suitable for logic circuits, low-power and high-density applications at the industrial levels.

关键词： Memristors Hardware design languages Integrated circuit modeling Mathematical model Switches SPICE Analytical models

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A Model Parameter Extraction Methodology Including Time-dependent Variability for Circuit Reliability simulation 15

A Model Parameter Extraction Methodology Including Time-depe...

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作者： Diaz-Fortuny, J. Saraza-Canflanca, P. Toro-Frias, A. Castro-Lopez, R. Martin-Martinez, J. Roca, E. Rodriguez, R. Fernandez, F. V. Nafria, M. UAB Elect Engn Dept REDEC Grp Barcelona Spain Univ Seville CSIC Inst Microelect Sevilla IMSECNM Seville Spain

ISBN: (纸本)9781538651537

In current CMOS advanced technology nodes, accurate extraction of transistor parameters affected by time-dependent variability, like threshold voltage (V-th) and mobility (mu), has become a critical issue for both analog and digital circuit simulation. In this work, a precise VTH0 and U0 BSIM parameters extraction methodology is presented, together with a straightforward I-DS to VTH0 shift conversion, to allow the complete study of device aging effects for reliability circuit simulation.

关键词： CMOS BTI HCI modelling RTN aging

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The Nonlinear Bipolar and Unipolar Switching Behavior of a Memristor

The Nonlinear Bipolar and Unipolar Switching Behavior of a M...

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IEEE International Conference on design & Test of Integrated Micro & Nano-Systems (DTS)

作者： Sami Ghedira Khaoula Mbarek Faten Ouaja Rziga Kamel Besbes Microelectronics & Instrumentation Laboratry Monastir Tunisia FSM Centre for Research on Microelectronics & Nanotechnology Sousse Technology Park Director Microelectronics & Instrumentation Laboratry University of Monastir Monastir Tunisia

The existence of the memristor as a nanoscale fundamental component is an interesting development in electronic systems. This is due to its remarkable nonlinear characteristics and its ability to examine large-scale amounts of storing data and to implement bio-inspired neuromorphic systems used in analyzing data. Research on memristor modeling based on SPICE tools, that are commonly used in electronic systems simulations, has grown rapidly. The aim of this paper is to simulate different types of memristor switching behavior. A simple memristor SPICE model is used to explore four types of memristor. This includes bipolar switching behavior, unipolar switching behavior, bipolar switching behavior with forgetting effect and a reversible process between bipolar and unipolar switching behavior of a memristor. In order to validate this study, the simulation results were compared against experimental data. This comparison showed a good agreement between the simulation results and the experimental results, compared with various memristor models. The SPICE macromodel used in our simulations shows a special advantage for its flexibility and simplicity.

关键词： Memristors Switches Mathematical model SPICE Resistance Voltage measurement Hysteresis

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modeling of a capacitive sensor dedicated to drug injection 14

Modeling of a capacitive sensor dedicated to drug injection

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作者： Joly, Sylvain Lepple-Wienhues, Albrecht Dehollain, Catherine Valtron Technol SA Innovat Grp Lausanne Switzerland Ecole Polytech Fed Lausanne RFIC Res Grp Lausanne Switzerland

ISBN: (纸本)9781538653869

to follow up patients who inject themselves insulin with injection pen is a quite complex task. Due to the repetition of injections, and the numerous influent parameter the patient can easily made an injection mistake and it is difficult for health-takers to follow these injections and can detect errors in order to compensate this problem, a device which measures the volume of drug by using electric fields has been developed. A theoretical model, simulations and experiments have been conducted to validate this capacitive measurement technique. The experiments confirm Theory and simulations results. A sensitivity around 5117 for 10uL have been found and a good repeatability between three caps have been achieved which is equal to an error of 0.44fF for lOuL of insulin and correspond to an error of +/- 4.12%.

关键词： Capacitive Injection pen electrodes volume measurement simulation

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Evaluation Method of Electronic Performance Margins for Sip Based on Field-Circuit and Multiple Physical Cooperative simulation

Evaluation Method of Electronic Performance Margins for Sip ...

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European microelectronics and Packaging Conference, EMPC

作者： Zhaorong Li Gang Xu Xuejiao Huang Liming Lv Rong Zeng Wei Zhong China Academy of Engineer Physics Institute of Electronic Engineering Mianyang China

Owing to advantages, such as multi-function and high integration, etc, system in package (SiP) is more and more popular in the electronic industry. But when designing a SiP product, it also put forward higher requirements to design for reliability, environmental adaptability, for example. Among them, the primary consideration is the more accurate margin analysis of electrical performance in different working environments. Electrical performance evaluation is no longer a simple link simulation. It needs to consider the impact of internal and external working environment including the electromagnetic (EM), thermal and mechanical field for the system which all need to be accurately considered in the electrical performance margins evaluation for the SiP. Based on the method of field-circuit and multi-physical cooperative simulation, an accurate method for evaluating the electrical performance margin of SiP is proposed this paper. In this evaluation method, we can bring many key influencing factors, such as the structure, IC & components, the material parameter fluctuation, the working environment condition, and so on. Using this collaborative simulation, we can establish different accuracy of the evaluation model of the electrical performance margin, which is suitable for the design requirements of different stages of the system. In order to validate this evaluation method, we have designed and manufactured a simplified verification model for multi-physical field simulation from a practical radar SiP product.

关键词： Integrated circuit modeling Temperature distribution Reliability engineering Couplings Thermal analysis Electronics industry

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A Practical HfO2-based OxRAM Memristor Model Suitable for Circuit design and simulation

A Practical HfO2-based OxRAM Memristor Model Suitable for Ci...

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IEEE International Conference on design & Test of Integrated Micro & Nano-Systems (DTS)

作者： Khaoula Mbarek Faten Ouaja Rziga Sami Ghedira Kamel Besbes Microelectronics & Instrumentation Laboratry Monastir Tunisia FSM Centre for Research on Microelectronics & Nanotechnology Sousse Technology Park Director of Microelectronics & Instrumentation Laboratry University of Monastir Monastir Tunisia

CMOS technologies are attending their limits due to its continuous shrinking process, which has an impact on various aspects, accurately on the size, performance and power consumption of the device. One of the promising devices known as memristor is under investigation in order to be used together with deep nanometer CMOS, that has the ability to solve technologies problems. It has emerged in several domains due to its nonlinear behavior, nonvolatility, low power consumption, high density and compatibility with CMOS. Several memristor models have been developed so far. Whereas, a compact model should be flexible and sufficiently accurate. In this paper, an analysis of a memristor model using Verilog-A and SPICE is discussed, in order to elaborate an appropriate model for implementation in CMOS-based circuit applications. It is shown that the proposed Verilog-A model is flexible, accurate and efficient, verified by both electrical simulations and experimentally measured results. It also carries the desired nonlinear memristor fingerprint, an adjustable threshold voltage and the applicability to fit and simulate different switching behaviors. Hence, it is the most suitable for low-power and high-density applications at the industrial levels, which takes advantage compared to other approaches based on SPICE models.

关键词： Memristors Hardware design languages Integrated circuit modeling SPICE Switches Mathematical model Computational modeling

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Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors

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Russian microelectronics 2018年第7期47卷 510-515页

作者： Razuvaev, Yu. Yu. Voronezh State University Voronezh Russia

Abstract: Voltage doublers on switched capacitors are commonly used impulse voltage converters. The modern approach to designing electronic circuits involves the use of specialized circuit design programs, allowing us to take into account many factors and get a result as close as possible to the reality. A mathematical description of transients in the circuit of a voltage doubler is given. Using the mathematical modeling of transients, the formulas for designing the circuit of a voltage doubler based on switched capacitors are derived. The formulas take into account the requirements for setting the voltage and ripple levels and the relaxation time of the output voltage. The validity of analytical calculations is verified by the results of circuit simulation. The practical recommendations for choosing the scheme parameters are given. The work may be of interest to developers of analog circuits. The obtained formulas make it possible to quickly compute the circuit parameters and obtain the necessary characteristics. © 2018, Pleiades Publishing, Ltd.

关键词： Circuit simulation

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