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检索条件"任意字段=Design, Modeling, and Simulation in Microelectronics"
1662 条 记 录,以下是31-40 订阅
排序:
Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using ALXGA1-XAS/INP: PT with LA2O3 Oxide Layer for Fabrication
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RECENT PATENTS ON NANOTECHNOLOGY 2024年 第3期18卷 374-385页
作者: Gowthaman, Naveenbalaji Srivastava, Viranjay M. Univ KwaZulu Natal Dept Elect Engn ZA-4041 Durban South Africa
Background/Introduction: The Cylindrical Surrounding Double-Gate MOSFET has been designed using Aluminium Gallium Arsenide in its arbitrary alloy form alongside Indium Phosphide with Lanthanum Dioxide as a high-kappa ... 详细信息
来源: 评论
Analysis and modeling of System Performance Based on Random Matching Errors, Gradient Errors, and Finite Output Impedance of Current-source DAC  3
Analysis and Modeling of System Performance Based on Random ...
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2023 3rd International Conference on Electronics, Circuits and Information Engineering, ECIE 2023
作者: Ma, Zhihua Song, Zheng Yao, Yao Hu, Jianguo School of Microelectronics Science and Technology Sun Yat-sen University Guangdong Province Zhuhai519000 China Shenzhen Research Institute Sun Yat-Sen University Guangdong Province Shenzhen518000 China Development Research Institute of Guangzhou Smart City Guangdong Province Guangzhou510000 China
With the development of communication technology, the performance of digital-to-analog converters as the last link in signal processing is particularly important. This paper analyzes the errors of current rudder DAC a... 详细信息
来源: 评论
simulation Analysis Thermal Damage Effect of Strong Electromagnetic Pulse on PIN Limiter
Simulation Analysis Thermal Damage Effect of Strong Electrom...
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2023 Cross Strait Radio Science and Wireless Technology Conference, CSRSWTC 2023
作者: Bing, Ruan Dongdong, Wang Wenzhuo, Wang Shengquan, Zheng Xujing, Huang Science and Technology on Electromagnetic Compatibility Laboratory Wuhan430064 China China Ship Development and Design Center Wuhan430064 China
The effects of pulse power and rise time on the performance of PIN limiter and internal temperature of PIN diode have been analyzed through multi-physics modeling simulation. The results show that the leakage power of... 详细信息
来源: 评论
First large-scale (68×25×5 nm3) atomistic modeling for accurate and efficient etching process based on machine learning molecular dynamics (MLMD)
First large-scale (68×25×5 nm3) atomistic modeling for acc...
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2024 IEEE International Electron Devices Meeting, IEDM 2024
作者: Feng, Zemeng Hu, Ziyi Yu, Tong Lai, Panpan Ge, Rui Shao, Hua Shang, Dashan Li, Zhiqiang Xu, Kui Li, Junjie Chen, Rui Li, Ling State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China
Revealing the reaction mechanisms in manufacturing advanced devices is crucial for enhancing performance at nodes below 3 nm. In this study, we introduce the first large-scale atomistic model utilizing a machine learn... 详细信息
来源: 评论
modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors
Modeling the Thermal Characteristics of Stacked 2T0C Memory ...
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International Conference on simulation of Semiconductor Processes and Devices (SISPAD)
作者: He, Song Li, Haoxin Xu, Guangwei Tang, Xinyi Li, Yuanbiao Kim, Jaewoo Gu, Tingting Xue, Xingkun Li, Zelun Xu, Handong Dong, Haiyang Zhou, Kai Hu, Xianqin Long, Shibing Univ Sci & Technol China Sch Microelect Hefei 230026 Peoples R China Changxin Memory Technol Inc Hefei 230601 Peoples R China
For the first time, the electrothermal characteristics of the stacked 2T0C memory array were modeled based on the material properties, electron transport mechanism of InGaZnO4 (IGZO) and basic Fourier heat flow equati... 详细信息
来源: 评论
String-level compact modeling of erase operations in the body-floated vertical channel of 3D charge trapping flash memory
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microelectronics JOURNAL 2024年 153卷
作者: Cho, Sunghwan Choi, Byoungdeog Sungkyunkwan Univ Dept Semicond & Display Engn Suwon 16419 South Korea Samsung Elect Co Memory Business Hwasung 18448 South Korea Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea
In this study, we examined the use of string-level compact modeling as an effective framework for circuit simulation focusing on erase operation in 3D charge trapping flash (CTF) memory devices. We analyzed the behavi... 详细信息
来源: 评论
A Highly Collaborative EDA Toolset for design Technology Co-Optimization Towards Analog and Mixed Signal Circuits
A Highly Collaborative EDA Toolset for Design Technology Co-...
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2023 International Symposium of Electronics design Automation, ISEDA 2023
作者: Shao, Yali Chen, Yanning Shen, Meigen Zhang, Dong Xie, Yaoming Li, Dongmei Liang, Yingzong Chi, Boming Liu, Fang Zhao, Dongyan Meng, Qingmeng Chang, Zezhou Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing China State Grid Shanxi Electric Power Research Institute Shanxi China
In order to meet the high performance and reliability requirements of industrial chips, especially analog and mixed-signal (AMS) circuits, the process technology and circuits design need to be highly collaborative. In... 详细信息
来源: 评论
Harmonic Transfer Function modeling of LCC-S Inductive Power Transfer System
Harmonic Transfer Function Modeling of LCC-S Inductive Power...
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2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
作者: Gong, Cheng Ding, Zhaoyi Lam, Chi-Seng University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China University of Macau Institute of Microelectronics China University of Macau Faculty of Science and Technology Department of Electrical and Computer Engineering China
Mathematical model of the inductive power transfer (IPT) systems is essential for stability analysis and control design. Conventional modeling approaches for IPT systems result in high-order models, as each resonant v... 详细信息
来源: 评论
Investigation of Parasitic Background IR Radiation Levels on a Photodetector Surface in a Vacuum Cryostat
Investigation of Parasitic Background IR Radiation Levels on...
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2022 IEEE International Multi-Conference on Engineering, Computer and Information Sciences, SIBIRCON 2022
作者: Novoselov, Andrew R. Dobrovolsky, Peters P. Khryashchev, Sergey V. Shatunov, Konstantin P. Aldokhin, Pavel A. Dept. of Thermal Imaging and Television Technology and Design Institute of Applied Microelectronics Novosibirsk Branch of Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences Novosibirsk Russia Dept. of Modeling of Electrooptical Devices Novosibirsk Branch of Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences Technology and Design Institute of Applied Microelectronics Novosibirsk Russia
The results of experimental and numerical simulations studying the stray background levels on an IR photodetector surface in a vacuum cryostat with a cylindrical diaphragm are presented in the article. The stray backg... 详细信息
来源: 评论
Advanced process library irradiation parameter modeling and analysis techniques  2
Advanced process library irradiation parameter modeling and ...
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2nd International Conference on Electronic Information Technology, EIT 2023
作者: Shi, Fayin Wang, Liang Sang, Qianqian Shen, Mengdong Li, Yong Liu, Chang National University of Defense Technology Hunan Changsha410073 China Beijing Microelectronics Technology Institute Beijing100076 China
The irradiation experimental analysis of chips can obtain irradiation data of advanced processes, which is beneficial to guide the research of new generation of anti-irradiation chips. In this paper, based on the GDS ... 详细信息
来源: 评论