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Electronics Packaging Technology Conference (EPTC)

作者： Lay Cuang Gan Yee Huan Yew Bowen Liu Hui Lee Teng Intel Microelectronics (M) Sdn. Bhd. Penang Malaysia Intel Corporation Hillsboro OR USA

ISBN: (数字)9781728138350

ISBN: (纸本)9781728138367

The crosstalk analysis of FPGA high-speed signals with generic pre-layout modelling approach effectively identify critical and dominant parameters for further optimizations to meet the channels timing without the need of having the completed design in place. Results show that the channel noise obtained from the pre-layout model correlates well with post-layout model simulation result, with up to 10GHz signal bandwidth. This approach also reduces the design cycle time from 3 days to 0.5 days, hence reducing the lead time in overall crosstalk analysis.

关键词： Crosstalk Analytical models Electronics packaging Bandwidth Integrated circuit modeling Solid modeling Routing

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AlGaN/GaN非凹槽混合阳极SBD射频性能及建模

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半导体技术 2021年第5期46卷 358-364,381页

作者：刘芷诫郑英奎康玄武孙跃吴昊陈晓娟魏珂中国科学院大学北京100049 中国科学院微电子研究所北京100029

基于大功率微波输能的需求,制备了新型AlGaN/GaN非凹槽混合阳极肖特基势垒二极管(SBD)。对新型结构的器件进行了小信号建模,可用于微波输能电路设计。通过开路、短路去嵌结构法从小信号S参数中提取了器件的寄生电容、电感和电阻,结合去... 详细信息

基于大功率微波输能的需求,制备了新型AlGaN/GaN非凹槽混合阳极肖特基势垒二极管(SBD)。对新型结构的器件进行了小信号建模,可用于微波输能电路设计。通过开路、短路去嵌结构法从小信号S参数中提取了器件的寄生电容、电感和电阻,结合去嵌后的S参数与直流I-V、C-V特性曲线提取了器件的本征参数。综合寄生和本征参数建立了器件的小信号模型,将模型仿真结果与器件的实测结果进行了对比,同时引入误差因子评估了模型的准确度。结果表明,在0.1~10 GHz内,回波损耗相对误差小于4.1%,插入损耗相对误差小于3.7%,验证了所提出模型的可行性和准确性。

关键词： GaN AlGaN/GaN异质结肖特基势垒二极管(SBD) 混合阳极微波输能

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Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching simulations

Novel Numerical Dissipation Scheme for Level-Set Based Aniso...

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International Conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Alexander Toifl Michael Quell Andreas Hössinger Artem Babayan Siegfried Selberherr Josef Weinbub Christian Doppler Laboratory for High Performance TCAD Institute for Microelectronics TU Wien Wien Austria Silvaco Europe Ltd. Cambridge United Kingdom Institute for Microelectronics TU Wien Wien Austria

We propose a novel dissipation scheme for level-set based wet etching simulations. The scheme enables modeling of the temporal evolution of the etch profile during anisotropic wet etching processes and is based on the local geometry and the crystallographic direction-dependent etch rate. We implemented the scheme into Silvaco's Victory Process simulator which is utilized in this work to simulate the fabrication of source/drain cavities for sub-28 nm strained metal-oxide-semiconductor fieldeffect transistors. Our results show excellent agreement with experimental data. In particular, the main cavity-related design variables are accurately predicted.

关键词： Wet etching Cavity resonators Silicon Mathematical model Level set

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Lifetime Calculation Using a Stochastic Reliability Simulator for Analog ICs 15

Lifetime Calculation Using a Stochastic Reliability Simulato...

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15th International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th Conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Toro-Frias, A. Martin-Lloret, P. Martinez, J. Castro-Lopez, R. Roca, E. Rodriguez, R. Nafria, M. Fernandez, F. V. Univ Seville CSIC Inst Microelect Sevilla IMSECNM Seville Spain Univ Autonoma Barcelona Dept Engn Elect Barcelona Spain

ISBN: (纸本)9781538651537

Due to the impact of technology downscaling into the nanometer scale, designers have to take into account not only the degradation of circuit performances due to time-zero variability but also the degradation due to time-dependent variability. To evaluate their impact in the circuit performances, a critical metric is the time-dependent yield, the percentage of circuit samples of a particular design that operates correctly with respect to a set of performance constraints, a metric that, due to the presence of time-dependent variability, changes over time. The lifetime of the circuit, or the time the circuit is working above a pre-defined yield threshold can be calculated using the time-dependent yield. These are crucial metrics, even fundamental in many applications. This work proposes a new efficient simulation methodology that can provide an accurate calculation of time-dependent yield and lifetime using a stochastic reliability simulator for analog circuits while keeping CPU times low.

关键词： lifetime reliability simulation yield calculation

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TCAD-Spice Co-simulation of Ferroelectric Capacitor as an Electrically Trimmable On-Chip Capacitor in Analog Circuit

TCAD-Spice Co-Simulation of Ferroelectric Capacitor as an El...

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IEEE SOI-3D-Subthreshold microelectronics Technology Unified Conference (S3S)

作者： K. Huynh A. C. Tenkeu K. P. Pun H. Y. Wong San Jose State University San Jose USA Chinese University of Hong Kong Hong Kong China

ISBN: (数字)9781728135236

ISBN: (纸本)9781728135243

In this paper, Ferroelectric Capacitor (FEC) is proposed as an electrically trimmable capacitor for integrated circuit applications and verified using TCAD-SPICE co-simulation. TCAD simulation is used to obtain the FEC capacitance by solving Landau-Khalatnikov (LK) Equation and Poisson Equation. TCAD mixed-mode simulation is used to study the stability of the circuit. FEC compact model is extracted and implemented in Verilog-A code. The FEC is then used in a single stage common source amplifier and, by changing the DC bias of the FEC from -5V to 0V, the 3dB bandwidth is shown to be trimmable electrically from 0.6GHz to 1.3GHz. The methodology also demonstrates the possibility of design-Technology Co-Optimization (DTCO) of FEC in analog and RF circuits by using TCAD-SPICE co-simulation.

关键词： Capacitance Capacitors Integrated circuit modeling Mathematical model Iron Bandwidth Thermal variables control

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Creep measurement and choice of creep laws for BGA assemblies' reliability simulation

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microelectronics RELIABILITY 2018年 88-90卷 1172-1176页

作者： Pin, S. Guedon-Gracia, A. Deletage, J. -Y. Fremont, H. Inst Rech Technol St Exupery 3 Rue TarfayaCS 34436 F-31405 Toulouse 4 France Univ Bordeaux Lab IMS Talence France

Since the replacement of hazardous materials by the RoHS directive, the intensive use of lead free solder materials generates countless studies to find new acceleration factors. In that scope, identifying the failure mechanisms involved in accelerated thermal tests has become of great concern for reliability design. Numerical tools are commonly developed for predictive analysis but their accuracy and capacity to be transposed to multiple technologies rely in part on the right choice of material behaviour. This study proposes to fit material coefficients of 4 different available creep laws to a same set of experiments. A unique couple of Finite Element models is defined using global/local calculations. Global calculation gives the assembly behaviour under thermal loads that is used to feed a part of the assembly with a more refined mesh to calculate locally a BGA ball that behaves following the Garofalo's, Anand's, Darveaux's laws of creep. The discrepancies that this comparison highlights, show how much care needs to be taken at that step of modeling for reliability prediction.

关键词： Creep law BGA assemblies Solder material Thermal cycling Finite element modeling

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An Optimized modeling Method for Transformer design

An Optimized Modeling Method for Transformer Design

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International Conference on ASIC

作者： Yingying Liang Xiaoming Liu Jing Jin Center for Analog/RF Integrated Circuits (CARFIC) School of Microelectronics Shanghai Jiaotong University Shanghai China

This paper presents an optimized modeling method for transformer design in the narrow-band application. In order to improve the accuracy of analysis, the parasitic capacitors are contained in the equivalent circuit model. According to the model, the parameters of transformer with maximum efficiency can be obtained. The transformer is used in the output impedance matching of power amplifier with a turn ratio of 2:3 in 40-nm CMOS process. Equality factor Q of primary and secondary toil of transformers are 9.28 and 14.19 respectively, while the coupling coefficient is 0.83. This method is demonstrated to be efficient according to the post simulation on a power amplifier with 25dBm saturated power and 19% PAE when the input power is OdBm in 2.4GHz under 3.3V voltage supply.

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Prediction of Energy Resolution in the JUNO experiment

arXiv

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arXiv 2024年

作者： Abusleme, Angel Adam, Thomas Adamowicz, Kai Ahmad, Shakeel Ahmed, Rizwan Aiello, Sebastiano An, Fengpeng An, Qi Andronico, Giuseppe Anfimov, Nikolay Antonelli, Vito Antoshkina, Tatiana de André, João Pedro Athayde Marcondes Auguste, Didier Bai, Weidong Balashov, Nikita Baldini, Wander Barresi, Andrea Basilico, Davide Baussan, Eric Bellato, Marco Beretta, Marco Bergnoli, Antonio Bick, Daniel Bieger, Lukas Biktemerova, Svetlana Birkenfeld, Thilo Blake, Iwan Blum, David Blyth, Simon Bolshakova, Anastasia Bongrand, Mathieu Bordereau, Clément Breton, Dominique Brigatti, Augusto Brugnera, Riccardo Bruno, Riccardo Budano, Antonio Busto, Jose Cabrera, Anatael Caccianiga, Barbara Cai, Hao Cai, Xiao Cai, Yanke Cai, Zhiyan Callier, Stéphane Calvez, Steven Cammi, Antonio Campeny, Agustin Cao, Chuanya Cao, Guofu Cao, Jun Caruso, Rossella Cerna, Cédric Cerrone, Vanessa Chang, Jinfan Chang, Yun Chatrabhuti, Auttakit Chen, Chao Chen, Guoming Chen, Pingping Chen, Shaomin Chen, Xin Chen, Yiming Chen, Yixue Chen, Yu Chen, Zelin Chen, Zhangming Chen, Zhiyuan Chen, Zikang Cheng, Jie Cheng, Yaping Cheng, Yu Chin Chepurnov, Alexander Chetverikov, Alexey Chiesa, Davide Chimenti, Pietro Chin, Yen-Ting Chou, Po-Lin Chu, Ziliang Chukanov, Artem Claverie, Gérard Clementi, Catia Clerbaux, Barbara Molla, Marta Colomer Di Lorenzo, Selma Conforti Coppi, Alberto Corti, Daniele Csakli, Simon Cui, Chenyang Corso, Flavio Dal Dalager, Olivia Datta, Jaydeep De La Taille, Christophe Deng, Zhi Deng, Ziyan Ding, Xiaoyu Ding, Xuefeng Ding, Yayun Dirgantara, Bayu Dittrich, Carsten Dmitrievsky, Sergey Dohnal, Tadeas Dolzhikov, Dmitry Donchenko, Georgy Dong, Jianmeng Doroshkevich, Evgeny Dou, Wei Dracos, Marcos Druillole, Frédéric Du, Ran Du, Shuxian Dugas, Katherine Dusini, Stefano Duyang, Hongyue Eck, Jessica Enqvist, Timo Fabbri, Andrea Fahrendholz, Ulrike Fan, Lei Fang, Jian Fang, Wenxing Fedoseev, Dmitry Feng, Li-Cheng Feng, Qichun Ferraro, Federico Fournier, Amélie Fritsch, Fritsch Gan, Haonan Gao, Feng Gao, Feng Garfagnini, Alberto Gavrikov, Arsenii Yerevan Physics Institute Yerevan Armenia Université Libre de Bruxelles Brussels Belgium Universidade Estadual de Londrina Londrina Brazil Pontificia Universidade Catolica do Rio de Janeiro Rio de Janeiro Brazil Anid Chile Pontificia Universidad Católica de Chile Santiago Chile Beijing Institute of Spacecraft Environment Engineering Beijing China Beijing Normal University Beijing China China Institute of Atomic Energy Beijing China Institute of High Energy Physics Beijing China North China Electric Power University Beijing China School of Physics Peking University Beijing China Tsinghua University Beijing China University of Chinese Academy of Sciences Beijing China Jilin University Changchun China College of Electronic Science and Engineering National University of Defense Technology Changsha China Chongqing University Chongqing China Dongguan University of Technology Dongguan China Jinan University Guangzhou China Sun Yat-sen University Guangzhou China Harbin Institute of Technology Harbin China University of Science and Technology of China Hefei China The Radiochemistry and Nuclear Chemistry Group University of South China Hengyang China Wuyi University Jiangmen China Shandong University Jinan China Key Laboratory of Particle Physics and Particle Irradiation of Ministry of Education Shandong University Qingdao China Nanjing University Nanjing China Guangxi University Nanning China East China University of Science and Technology Shanghai China School of Physics and Astronomy Shanghai Jiao Tong University Shanghai China Tsung-Dao Lee Institute Shanghai Jiao Tong University Shanghai China Institute of Hydrogeology and Environmental Geology Chinese Academy of Geological Sciences Shijiazhuang China Nankai University Tianjin China Wuhan University Wuhan China Xi’an Jiaotong University Xi’an China Xiamen University Xiamen China School of Physics and Microelectronics Zhengzhou University Zhengzhou China Institute of Physics National Ya

This paper presents an energy resolution study of the JUNO experiment, incorporating the latest knowledge acquired during the detector construction phase. The determination of neutrino mass ordering in JUNO requires an exceptional energy resolution better than 3% at 1 MeV. To achieve this ambitious goal, significant efforts have been undertaken in the design and production of the key components of the JUNO detector. Various factors affecting the detection of inverse beta decay signals have an impact on the energy resolution, extending beyond the statistical fluctuations of the detected number of photons, such as the properties of the liquid scintillator, performance of photomultiplier tubes, and the energy reconstruction algorithm. To account for these effects, a full JUNO simulation and reconstruction approach is employed. This enables the modeling of all relevant effects and the evaluation of associated inputs to accurately estimate the energy resolution. The results of study reveal an energy resolution of 2.95% at 1 MeV. Furthermore, this study assesses the contribution of major effects to the overall energy resolution budget. This analysis serves as a reference for interpreting future measurements of energy resolution during JUNO data collection. Moreover, it provides a guideline for comprehending the energy resolution characteristics of liquid scintillator-based detectors. © 2024, CC BY.

关键词： Budget control

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High-Efficiency GaAs Solar Cell Optimization by Theoretical simulation

High-Efficiency GaAs Solar Cell Optimization by Theoretical ...

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microelectronics Technology and Devices (SBMicro)

作者： Fernando D. Silva Daniel N. Micha Centro Federal de Educação Tecnológica Celso Suckow da Fonseca – CEFET/RJ Rio de Janeiro Brazil

Theoretical simulations of solar cell current-voltage characteristics provide important information for a better design of the device structure, such as layers thicknesses and doping levels, in order to obtain high photovoltaic conversion efficiency. The inclusion of precise material parameters is critical to obtain reliable results and detailed understanding of the simulated device operation. In this study, GaAs solar cell structures were simulated by drift-diffusion model with SCAPS-1D in order to optimize the performance under 1 sun illumination. Moreover, we used the published results of some devices as references to infer their structures, as the details are normally not completely disclosed by the authors. To do so, an optimization study was required to probe different materials, thicknesses and doping levels for the layers. With the inferred structure, it was possible to evaluate the possibility of improvements through variation of the structure parameters to achieve even higher efficiencies.

关键词： Photovoltaic cells Photonics Recycling Gallium arsenide Semiconductor process modeling Doping Performance evaluation

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Influence of Different Ion Implantation and Diffusion Models on UMOS Threshold Voltage

Influence of Different Ion Implantation and Diffusion Models...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Yong Feng Liu Quanyuan Feng Hongjin Yang Tao Jin Institute of Microelectronics Southwest Jiaotong University Chengdu China

ISBN: (数字)9781728134031

ISBN: (纸本)9781728134048

Usually, to save the design time and cost, the precision simulations before the chip tape-out is required and a key step. Therefore, this paper uses four sets of ion implantation and diffusion model simulating and comparing the impurity concentration distribution of UMOS channel region, and then simulates the experiment of different model combination to obtain their threshold voltage drift. The model combination of the most accurate UMOS devices is obtained by comparing with the actual test results (after the fab factory test). The simulation results show that the combination of Monte Carlo implantation and Pair diffusion models is reasonable.

关键词： Semiconductor process modeling Ion implantation Monte Carlo methods Mathematical model Semiconductor device modeling Springs Threshold voltage

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