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design Automation of Superconductive Digital Circuits: A review

IEEE NANOTECHNOLOGY MAGAZINE 2021年第6期15卷 54-67页

作者： Krylov, Gleb Kawa, Jamil Friedman, Eby G. Univ Rochester Dept Elect & Comp Engn New York NY 14627 USA Synopsys Inc Mountain View CA 94043 USA

Electronic design Automation (EDA) is essential for the design of large-scale microelectronic systems. In this article, EDA methodologies, techniques, and algorithms used to develop superconductive computing systems are reviewed. The semicustom standard cell-based design flow, common in conventional CMOS circuits, is widely adopted in modern superconductive digital circuits. Differences and issues in CAD flows as compared to CMOS design methodologies are highlighted. The most common stages of these design flows, from high-level simulation to physical layout, are described. These stages are grouped into three areas: simulation/modeling, synthesis/place and route, and verification. Modern approaches and tools for superconductive circuits are reviewed for each of these areas.

关键词： CMOS technology design automation Integrated circuit modeling microelectronics Computer architecture Microprocessors Superconductivity Digital circuits design methodology Solid modeling Superconducting devices

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Co‑packaged optics(CPO):status,challenges,and solutions

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Frontiers of Optoelectronics 2023年第1期16卷 1-40页

作者： Min Tan Jiang Xu Siyang Liu Junbo Feng Hua Zhang Chaonan Yao Shixi Chen Hangyu Guo Gengshi Han Zhanhao Wen Bao Chen Yu He Xuqiang Zheng Da Ming Yaowen Tu Qiang Fu Nan Qi Dan Li Li Geng Song Wen Fenghe Yang Huimin He Fengman Liu Haiyun Xue Yuhang Wang Ciyuan Qiu Guangcan Mi Yanbo Li Tianhai Chang Mingche Lai Luo Zhang Qinfen Hao Mengyuan Qin School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong KongChina HKUST Fok Ying Tung Research Institute Guangzhou 511462China The Hong Kong University of Science and Technology(Guangzhou) Guangzhou 511462China Chongqing United Micro-Electronics Center(CUMEC) Chongqing 401332China Hisense Broadband Multimedia Technologies Co. Ltd.Qingdao 266000China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Microelectronics Xi’an Jiaotong UniversityXi’an 710049China Zhangjiang Laboratory Shanghai 201210China The State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China Huawei Technologies Co. Ltd.Shenzhen 440307China College of Computer National University of Defense TechnologyChangsha 410073China Institute of Computing Technology Chinese Academy of SciencesBeijing 100086China

Due to the rise of 5G,IoT,AI,and high-performance computing applications,datacenter trafc has grown at a compound annual growth rate of nearly 30%.Furthermore,nearly three-fourths of the datacenter trafc resides within *** conventional pluggable optics increases at a much slower rate than that of datacenter *** gap between application requirements and the capability of conventional pluggable optics keeps increasing,a trend that is *** optics(CPO)is a disruptive approach to increasing the interconnecting bandwidth density and energy efciency by dramatically shortening the electrical link length through advanced packaging and co-optimization of electronics and *** is widely regarded as a promising solution for future datacenter interconnections,and silicon platform is the most promising platform for large-scale *** international companies(e.g.,Intel,Broadcom and IBM)have heavily investigated in CPO technology,an inter-disciplinary research feld that involves photonic devices,integrated circuits design,packaging,photonic device modeling,electronic-photonic co-simulation,applications,and *** review aims to provide the readers a comprehensive overview of the state-of-the-art progress of CPO in silicon platform,identify the key challenges,and point out the potential solutions,hoping to encourage collaboration between diferent research felds to accelerate the development of CPO technology.

关键词： Co-packaged optics Silicon photonics High-performance computing Advanced packaging External laser Optical power delivery Co-simulation Standardization Transmitter Receiver

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An Infrared AFE Chip and System with Non-Invasive Blood Glucose Detection Output 17

An Infrared AFE Chip and System with Non-Invasive Blood Gluc...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Li, Bin Guo, Jiyuan Xie, Chengzhen Mei, Jian Deng, Lei Yin, Rui National Integrated Circuit Innovation Center Shanghai China School of Microelectronics Fudan University Shanghai China Jiashan Fudan Institute Jiaxing China

ISBN: (纸本)9798350361834

China, with the highest diabetic patient count globally as of 2021 stats, presents substantial market potential and broad prospects for non-invasive blood glucose detection (NIBGD) in healthcare. Infrared absorption spectroscopy (IAS) stands out among NIBGD methods for its advantages. Leveraging CMOS for its high integration, reliability, low power, and compactness, this study targets sensor exploration. The paper presents a long-wave IAS-based glucose detection scheme using multispectral imaging, with an AFE chip and system achieved via circuit design and Verilog-A modeling. simulation results show the superior performance of PGA in gain deviation, and accurately discerning 50 mg/dL and 138 mg/dL glucose levels. © 2024 IEEE.

关键词： Glucose sensors

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Detection and Classification of PCB Defects using Deep Learning Methods 31

Detection and Classification of PCB Defects using Deep Learn...

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31st IEEE microelectronics design and Test Symposium, MDTS 2022

作者： Legon, Andria Deo, Makarand Albin, Sacharia Audette, Michel Old Dominion University Department of Computational Modeling and Simulation Engineering NorfolkVA United States Norfolk State University Department of Engineering NorfolkVA United States

ISBN: (纸本)9781665468169

Automatic inspection methods are needed to cost-effectively discover defects in fabricated printed circuit boards (PCBs). This paper adapts a deep convolutional neural network design, called RetinaNet, to simultaneously locate and classify defects in PCBs. To improve detection performance, several network designs with regularization and dropout hyperparameters were tested. Not all defects render a PCB nonfunctional. This paper proposes re-evaluating network performance downweighing cosmetic defects. Adding a 25% dropout rate to each layer of the ResNet backbone, achieved an impressive 95.03% accuracy and 97.09% F-score on PCB images from a publicly available dataset. The study demonstrates the effectiveness of designing a single deep learning network to reliably and accurately detect as well as classify defects in PCB images. Our design can be extended to identification of defects in microelectronic circuits and semiconductor circuits with suitable modifications. © 2022 IEEE.

关键词： Printed circuit boards

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Analysis and simulation of Reset Leakage Currents and Quantization Error in a PFM Digital Pixel

Analysis and Simulation of Reset Leakage Currents and Quanti...

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International Conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD)

作者： Sergio Palomeque-Mangut Pablo Fernández-Peramo Juan A. Leñero-Bardallo Ángle Rodríguez-Vázquez Institute of Microelectronics of Seville (IMSE-CNM) CSIC-Universidad de Sevilla Spain

ISBN: (数字)9798350351927

ISBN: (纸本)9798350351934

This paper analyzes the design and performance optimization of the intensity-to-frequency converter in a Pulse-Frequency Modulated (PFM) Digital Pixel Sensor (DPS). We modeled the leakage currents induced by the self-reset feedback switch, which have a significant impact on its behavior. The work presents simulation results conducted in an advanced CMOS technology, illustrating the benefits of utilizing an NMOS reset to mitigate leakage, as opposed to a PMOS device. Additionally, the paper explores the consequences of quantization errors on sensor performance.

关键词： Semiconductor device modeling Performance evaluation Quantization (signal) simulation Switches Leakage currents Photoconductivity Integrated circuit modeling Optimization MOS devices

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TCAD simulation of Radiation Effects on 180 nm Logic Inverters

TCAD Simulation of Radiation Effects on 180 nm Logic Inverte...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Eike Trumann Amen Allah Bahri Gia Bao Thieu Kirsten Weide-Zaage Dorian Von Wolff Andre Bausen Alexander Müller Guillermo Payá-Vayá Chair for Chip Design for Embedded Computing Technische Universität Braunschweig Braunschweig Germany RESRI Group Institute of Microelectronic Systems (IMS) Leibniz Universität Hannover Hannover Germany Bundeswehr Research Institute for Protective Technologies and CBRN Protection (WIS) Munster Germany

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

This work presents a physically based simulation evaluation of the effects of single ionizing particles and displacement damage on logic inverter gates in a complementary metal-oxide semiconductor (CMOS) with 180 nm structure size. A technology computer-aided-design (TCAD) model is combined with a radiation model to allow the simulation of charged particles with a linear energy transfer (LET) between 1 and 100 $\frac{M e V \cdot c m^simulation}{m g}$ . For displacement damage simulation, proton energies between 1 and 10 MeV and neutron energies between 1.6 and 14 MeV have been evaluated to estimate the resulting transistor threshold voltages.

关键词： Semiconductor device modeling Protons Micromechanical devices Neutrons Pulse inverters Threshold voltage microelectronics Transistors Periodic structures MOS devices

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modeling I-MOS Capacitor C-V Characteristic for Non-Linear Charge Sensitive Amplifiers

Modeling I-MOS Capacitor C-V Characteristic for Non-Linear C...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Simone Giroletti Fatemeh Shojaei Massimo Manghisoni Lodovico Ratti Carla Vacchi Dept. of Electrical Computer and Biomedical Engineering University of Pavia Pavia Italy INFN Pavia Pavia Italy Dept. of Engineering and Applied Sciences University of Bergamo Dalmine Italy

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

An analytic model for the C- V characteristic of Inversion-Mode MOS (I-MOS) capacitors is defined, to be used in the design of Charge Sensitive Amplifiers (CSAs) with dynamic signal compression feature. The model is derived from the equations governing channel inversion in the two and four terminal metal-oxide-semiconductor structure. A comparison between the model predictions and the simulation results is provided for MOS capacitors and CSAs in a 65 nm CMOS technology.

关键词： Semiconductor device modeling Temperature sensors Analytical models Temperature distribution simulation Capacitors Predictive models

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modeling and Parameter Extraction of Semiconductor Devices for simulation and design Optimization of ESD Protection Circuits on BCD Technologies for Automobile and Industry Applications

Modeling and Parameter Extraction of Semiconductor Devices f...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Yuhua Cheng Wei-Wei Yu Eugene Worley Shanghai Research Institute of Microelectronics Peking University Shanghai China Silicon Crossing LLC Irvine CA USA

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

In this paper, modeling and parameter extraction of semiconductor devices for simulation and design optimization of ESD protection circuits on BCD technologies were discussed. Concepts on developing optimal and advanced devices for cost effective and robust ESD protection capability were introduced, which can be executed with the support of the test chip design experience and on-wafer device characterization equipment environment. Turnkey solutions of ESD protection device development and debugging of ESD surge failure could be offered to circuit designers for designing efficient and robust ESD protection circuit blocks, which need to be simulated and optimized with the model library for the ESD protection devices.

关键词： Semiconductor device modeling Integrated circuit technology Turnkey project Circuits Surge protection Libraries Integrated circuit modeling Surges Parameter extraction design optimization

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modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs

Modeling Non-Uniformity During Two-Step Dry Etching of Si/Si...

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International Conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Ziyi Hu Lado Filipovic Junjie Li Lingfei Wang Zhicheng Wu Rui Chen Yayi Wei Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an inner-spacer. Non-uniformity of substrate surface during wet or dry selective etching of SiGe is a common sight in industry, which cannot be modeled using standard process Technology Computer Aided design (TCAD) approaches. In this paper, we propose a method for the continuous simulation of the two-step dry etching process - anisotropic etching of the Si/SiGe stack and subsequent isotropic selective etching of SiGe - to study the mechanism behind the non-uniform profile formation. The proposed method is able to simulate the non-uniform profile accurately, which was calibrated and verified with experimental data.

关键词： Industries Fabrication design automation Dry etching Field effect transistors Logic gates Semiconductor process modeling Substrates Standards Silicon germanium

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Materials and device simulations for silicon qubit design and optimization

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MRS BULLETIN 2021年第7期46卷 634-641页

作者： Gyure, Mark F. Kiselev, Andrey A. Ross, Richard S. Rahman, Rajib Van de Walle, Chris G. Univ Calif Los Angeles Ctr Quantum Sci & Engn Los Angeles CA 90009 USA HRL Labs LLC Malibu CA 90265 USA Univ New South Wales Sch Phys Sydney NSW Australia Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA

Silicon-based microelectronics technology is extremely mature, yet this profoundly important material is now also poised to become a foundation for quantum information processing technologies. In this article, we review the properties of silicon that have made it the material of choice for semiconductor-based qubits with an emphasis on the role that modeling and simulation have played in understanding and quantifying these properties. We also address some of the challenges that remain for silicon qubits for which modeling can play an important role and we offer our perspective on the future of this technology.

关键词： Qubit Quantum dot Si modeling simulation

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