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Lester Eastman and the Monolithic Microwave Integrated Circuit Technology

ieee MICROWAVE MAGAZINE 2024年第6期25卷 132-135页

作者： Hwang, James Cornell Univ Sch Elect & Comp Engn Ithaca NY 14853 USA

The late Prof. Lester (Les) F. Eastman of cornell University retired in 2011 but remained in Ithaca, NY, USA, until he passed away a decade ago. His career accomplishments were well known. For example, in six decades of his academic career, he graduated 125 Ph.D. students. There are good articles about him on Wikipedia and Memorial Tributes of the National Academy of Engineering, although they miss some key points. For example, they cite his APS Fellow Award in 2001 but fail to mention his ieee Fellow Award in 1969 around the age of 40 shortly after being awarded tenure. Before that, when he was an assistant professor, he started a conference series on high-speed semiconductor devices and circuits and presented himself as a leader in the field. (It was renamed as the Lester Eastman conference decades later.) Few people would have the guts to pull such a stunt so early in their careers.

关键词： MMICs Eastman Lester F

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Energy efficient computing with tunnel FETs 10

Energy efficient computing with tunnel FETs

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10th International conference on advanced semiconductor devices & Microsystems (ASDAM)

作者： Ionescu, A. M. Ecole Polytech Fed Lausanne Nanolab Stn 11 CH-1015 Lausanne Switzerland

ISBN: (纸本)9781479954759

This paper reports on the state-of-the-art and recent advances concerning the tunnelling FETs as energy efficient switches, capable of operating at sub-0.5V due to their low Ioff and steep subthermal subthreshold slope (better than 60mV/decade at room temperature). Overall, it appears that the engineering of heterojunction tunnelling FETs with the application of some technology boosters similar to advanced silicon CMOS can offer the appropriate path for a high performance complementary platform for this new family of devices. More aggressive scaling of their operation voltage, below 0.1V, can be achieved with new concepts like the Electron-Hole Bilayer Tunnel FET exploiting the effect of low dimensionality on the Density of States (DOS).

关键词： energy conservation field effect transistor switches high electron mobility transistors low-power electronics silicon tunnel transistors CMOS DOS Si density of states electron-hole bilayer tunnel FET energy efficient computing energy efficient switches heterojunction tunnelling FET subthermal subthreshold slope CMOS integrated circuits Field effect transistors Junctions Logic gates Performance evaluation Silicon Tunneling Silicon Field effect transistors FIFLD EFFECT TRANSISTOR SWITCHES high electron mobility transistors tunnel transistors Tunneling low-power electronics CBARP gene disk based operating systems Logic gates CMOS integrated circuits Energy efficiency Junction Device Component Density of states Complementary Metal Oxide semiconductor

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Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs

Novel AC coupled gate driver for ultra fast switching of nor...

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Annual conference of Industrial Electronics Society

作者： Benjamin Wrzecionko Stefan Käch Dominik Bortis Jürgen Biela Johann W. Kolar Power Electronic Systems Laboratory ETH Zurich Zurich Switzerland

Over the last years, more and more SiC power semiconductor switches became available in low production volumes in order to prove their superior behavior with respect to fast switching speed, low on-resistance per chip area, high voltage range and high temperature operation. A very promising device among those introduced in numerous publications over the last years is the 1200 V 30 A JFET introduced by SemiSouth. It features a very low on-resistance (2.8m Ω cm 2 ), switching operation within 20 ns, a normally-off characteristic and has already been commercialized in contrast to many other SiC switches. To fully exploit the potential of the SiC normally-off JFET, conventional gate drivers for unipolar devices must be adapted to this device due to its special requirements: During on-state the gate voltage must not exceed 3 V, while a current of around 300 mA must be fed into the gate, during switching operation the transient gate voltage should be around ±15 V and the low threshold voltage of 0.7 V requires a high noise immunity which is a severe challenge as the device has a comparably low gate-source but high gate-drain capacitance. To meet these requirements, several concepts have been published recently. They deal with the challenges mentioned, but they also note certain limitations (e. g. frequency and duty cycle limitations or need for additional cooling). In this paper, a novel gate driver consisting only of one standard gate driver IC, resistors, capacitors and diodes is designed and experimentally validated. It supplies enough gate current for minimum on-resistance, allows fast switching operation, features a high noise immunity and can be used for any duty cycle and usual switching frequencies without significant self-heating.

关键词： Logic gates Driver circuits JFETs Silicon carbide Switches Temperature Integrated circuits

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New Power semiconductor Components for future innovative high frequency power converters

New Power Semiconductor Components for future innovative hig...

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ieee International conference on Industrial Technology

作者： Lorenz, L Infineon AG D-81609 Munich Germany

ISBN: (纸本)0780378520

The paper presents a comparison of recently introduced device concepts like the Super Junction MOSFET the IGBT and the actual trends in SiC devices. All these devices are capable of blocking voltages in the range of 1000V and optimized for different fields of applications. The latest Generation of CoolMOS combines extremely high on state conductivity with ultra fast switching speed at full pulse current capability. The blocking voltage capability ranges from 500V up to 800V. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic behaviour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diode. The performance of the diode will be discussed. Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. MOSFETs and JFETs capable to block 1800V with a specific on-resistance of 47mOmegacm(2) and 14.5mOmegacm(2), resp., are Sic devices attractive for the system designer. In order to illustrate these expectations on real devices, vertical normally-on JFETs with blocking voltages up to 1800V and a specific on-resistance of 12mOmega cm(2) are realized and will be discussed.

关键词： Frequency conversion Silicon carbide Voltage semiconductor diodes Switches JFETs MOSFET circuits Insulated gate bipolar transistors Pulse generation Conductivity

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A novel low-power high-speed programmable dual modulus divider for PLL-based frequency synthesizer

A novel low-power high-speed programmable dual modulus divid...

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2002 5th ieee International conference on semiconductor Electronics, ICSE 2002

作者： Sulaiman, Mohd S. Khan, Nasserullah Faculty of Engineering Multimedia University Cyberjaya 63100 Selangor Malaysia Waterloo ON Canada

ISBN: (纸本)0780375785

A low-power high-speed programmable dual modulus divider architecture is presented. The circuit's three building blocks: prescaler, 2- and 5-bit programmable dividers;were designed using high-performance single-phase clocking latch-up circuits rather than the conventional latch-up circuits widely used in digital systems. The dividers operate based on the modulus control and parallel loading concepts, capable of operating within the division ratio of 32 - 127. The programmable dual-modulus divider with 2.4 GHz maximum operating frequency was designed using the 0.18-μm CMOS technology. Post parasitics-extracted layout results verify that the total power dissipation was 2.3 mW (at 2.4 GHz, 1.8 V). © 2002 ieee.

关键词： Flip flop circuits

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Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

Proceedings of the 1997 IEEE/Cornell Conference on Advanced ...

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Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

The proceedings contains 45 papers from the 1997 ieee cornell conference on advanced concepts in high-speed semiconductor devices and circuits. Topics discussed include: gallium nitride;resonant tunneling diodes;quantum dot lasers;frequency multipliers;microstrip antennas;heterojunction bipolar transistors;track-and-hold circuits;microwave amplifiers;field effect transistors;Schottky diodes;thyristors;and optical devices.

关键词： semiconductor devices

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Proceedings: 2000 ieee/cornell conference on high Performance devices

Proceedings: 2000 IEEE/Cornell Conference on High Performanc...

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Proceedings of 2000 ieee/cornell conference on high Performance devices

The proceedings contains 38 papers. Topics discussed include non-unipolar devices, silicon carbide based devices and processing, wide band gap materials and processing and gallium boride based transistors.

关键词： semiconductor devices

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high temperature characterization of implanted-emitter 4H-SiC BJT

High temperature characterization of implanted-emitter 4H-Si...

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Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Tang, Yi Fedison, Jefferey B. Chow, T. Paul CIEEM Rensselaer Polytechnic Inst. Troy NY 12180-3590 United States

We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time de... 详细信息

关键词： Bipolar transistors

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Proceedings ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

Proceedings IEEE/Cornell Conference on Advanced Concepts in ...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

Presents the title page of the proceedings record.

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A theoretical determination of impact ionization induced gate current in InP HEMTs

A theoretical determination of impact ionization induced gat...

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Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Wu, Shangli Anwar, A.F.M. Electrical and Computer Engineering University of Connecticut Storrs CT 06269-2157 United States

A theoretical calculation of the gate current in InAlAs/InGaAs/InAlAs HEMTs, which include both the thermionic and tunneling components of the hole current due to impact ionization and the electron Schottky current, is reported. The hole current is a strong function of the ionization coefficient and the gate-bias dependent hole transmission probability. The theoretical gate current is in excellent agreement with experimental data.

关键词： high electron mobility transistors

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