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Threshold characteristics of blue to ultraviolet light emitting semiconductor lasers based on the A1GaN material system

Threshold characteristics of blue to ultraviolet light emitt...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Shah, P Mitin, V WAYNE STATE UNIV DEPT ELECT & COMP ENGNDETROITMI 48202

ISBN: (纸本)0780324420

Two-dimensional numerical simulations of AlGaN/GaN/AlGaN semiconductor lasers are performed using material parameters obtained from the literature. Important differences between these wide band gap lasers and lasers from other systems are the slow recombination rate and large band discontinuities. The behavior of the threshold, and thus the speed of operation, with variations in the aluminum content of the cladding regions, and the width of the active region are presented. Results for lasing due to band to band recombination and band to impurity level recombination are presented separately. From these we observe that the band to impurity recombination is difficult due to the reduced number of available states for recombination. Stopper layers are investigated and found to be useful at increasing carrier confinement without any detrimental effects because particle tunneling is very strong for majority carriers through the band discontinuities.

关键词： semiconductor lasers Bands Smart materials majority carriers Laser Carrier confinement aluminum gallium nitride aluminium content ULTRAVIOLET LIGHT active region LASING material parameter

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high performance AlGaInP leds using reactive thermally evaporated transparent conducting Indium-Tin-Oxide(ITO)

High performance AlGaInP leds using reactive thermally evapo...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Aliyu, YH Morgan, DV Thomas, H UNIV WALES COLL CARDIFF SCH ENGNDIV ELECTRCARDIFF CF2 1XHS GLAMWALES

ISBN: (纸本)0780324420

Reactive thermally evaporated transparent conducting Indium-Tin-Oxide (ITO) layers are used as window material and current spreading layer on AlGaInP Light Emitting Diodes (LEDs). The sheet resistance of the ITO films deposited is of the order 4.5 ohm/sq with up to 90% transmission in the visible region of the spectrum. Optimum thickness of the p and n-type AlGaInP cladding and the top p/sup +/GaAs epitaxial layers were determined. The LEDs fabricated emit light with a peak wavelength (/spl lambda/p) at 600 nm and Full Width at Half Maximum (FWHM) of 15 nm. A forward voltage of 1.71 V at 20 mA was obtained. In all cases the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices.

关键词： Light emitting diodes

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Cascaded self-induced holography: A new fabrication technology for optoelectronics

Cascaded self-induced holography: A new fabrication technolo...

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Lin, Chih-Hsien Zhu, Zuhua Lo, Yu-Hwa Cornell Univ Ithaca United States

We present a new method of fabricating submicron gratings with a high filling factor for optoelectronic devices from a glass mask. The glass mask has gratings on both sides with a period of at least four times of the final feature size. By modifying the grating periods on both sides of the glass mask, one can achieve multiple-period gratings with a very fine period spacing for advanced wavelength division multiplexing (WDM) devices. In this paper, we demonstrate 0.5 μm second-order gratings for 1.55 μm distributed feedback (DFB) lasers and gratings with a 6 angstroms period difference for WDM laser arrays using only optical sources.

关键词： Holography

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SOI epitaxial-channel Si-MOSFET with velocity overshoot

SOI epitaxial-channel Si-MOSFET with velocity overshoot

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Beer, L. Appel, W. Dudek, V. Hoefflinger, B. Inst for Microelectronics Stuttgart Stuttgart Germany

A novel device fabrication process using selective silicon epitaxy with lateral overgrowth and in-situ channel region generation by dopant switching during the growth process is presented. Based on this procedure SOI MOSFET's with channel lengths down to 100 nm were produced completely independent of lithographical resolution restrictions. Together with a 6 nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature.

关键词： MOSFET devices

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Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor

Magneto-oscillations in the bipolar quantum-well resonant tu...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Clark, KP Bate, RT Kirk, WP Seabaugh, AC Kao, YC TEXAS A&M UNIV CTR NANOSTRUCT MAT & QUANTUM DEVICE FAVRICATCOLLEGE STNTX 77843

ISBN: (纸本)0780324420

Magneto-oscillations due to a minority carrier two-dimensional electron gas (2DEG) in the base of a bipolar quantum-well resonant tunneling transistor at liquid helium temperatures are described. The 2DEG forms in a wide (20 nm) setback layer adjacent to an abrupt emitter/base heterojunction, often used in conventional HBTs as well as in the BiQuaRTT. The 2DEG has unusual capacitive effects at low temperature, since the sheet density increases to a maximum near 10/sup 12/ /cm/sup 2/ at flat-band conditions, then decreases at higher emitter/base bias. The high-mobility 2DEG accounts for the high lateral recombination, but may allow an effective reduction of base resistance, improving the high frequency response.

关键词： two-dimensional electron gas high frequency response Helium Isotopes FLAT BANDS ambipolar BASE RESISTANCE Neighbor Common Cold

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high-performance InGaAs photodetectors on Si and GaAs substrates

High-performance InGaAs photodetectors on Si and GaAs substr...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Ejeckam, FE Chua, CL Zhu, ZH Lo, YH CORNELL UNIV SCH ELECT ENGNITHACANY 14853

ISBN: (纸本)0780324420

In this work, we demonstrate record performance operation of long wavelength (1.55 /spl mu/m) P-I-N (InP-InGaAs-InP) photodetectors on both Silicon and Gallium Arsenide substrates using a wafer bonding technique. The photodetectors were made by first bonding the P-I-N epitaxial layers to the Si and GaAs substrates followed by chemical removal of the host (InP) substrate from the P-I-N structure. The photodetectors were then fabricated atop the newly exposed P-I-N (InP-InGaAs-InP) epilayers. Dark currents of as low as 57 pA on a GaAs substrate and 0.29 nA on a Si substrate were measured under 5 V reverse bias. The responsivity at 1.55 /spl mu/m wavelength was measured to be 1 A/W, corresponding to an external quantum efficiency of 80%. The series resistance measured across the bonded interface and P-I-N layers gave 17 /spl Omega/ on GaAs and 350 /spl Omega/ on Si, respectively.

关键词： Photodetectors

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Simulation of hot electron transport in semiconductor devices

Simulation of hot electron transport in semiconductor device...

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Fernando, Chenjing L. Frensley, William R. Bowen, R.Chris Univ of Texas at Dallas Richardson United States

A numerical technique based on semiclassical transport theory is presented to describe highly non-equilibrium electron transport in submicron devices. Open boundary conditions, polar optical phonon scattering, and full band structures are employed in our calculation. Special treatment to the abrupt junctions of potential profile is included in our model, so is the quantum reflection occurred around heterojunctions. The technique has been incorporated into an interactive program in which users may specify a region where the calculation is to be performed. Our results show that the polar optical phonon scattering has an important impact on the electron transport in hot electron transistors.

关键词： Electron transport properties

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23 GHz InP-based (1.55 μm) pseudomorphic MQW ridge waveguide lasers

23 GHz InP-based (1.55 μm) pseudomorphic MQW ridge waveguid...

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Yoon, H. Gutierrez-Aitken, A.L. Singh, J. Bhattacharya, P. Lourdudoss, S. Univ of Michigan Ann Arbor United States

We have studied the characteristics of InP-based multiple quantum well (MQW) coplanar ridge waveguide lasers in order to obtain large bandwidth under weakly index-guided conditions at relatively low photon density. We have also investigated the benefits of the strain compensated structure in achieving low-threshold, high-speed lasers. A maximum modulation bandwidth of 23 GHz was measured for a 2×200 μm2 laser. This is the highest bandwidth measured for a ridge waveguide laser operating at 1.55 μm. The photon density for this modulation bandwidth was only 1.8×1016 cm-3, compared to approximately 1017 cm-3 typical in buried heterostructure devices.

关键词： semiconductor lasers

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Theoretical investigation for the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the limitations of the modulation bandwidth in high-speed quantum well lasers

Theoretical investigation for the effects of spectral hole b...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Tsai, Chin-Yi Lo, Yu-Hwa Spencer, Robert M. Eastman, Lester F. Tsai, Chin-Yao De Montfort Univ Leicester United Kingdom

We present a theoretical model to investigate the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the modulation response in quantum well (QW) lasers. We find that the degradation of the resonant frequency that limits the modulation bandwidth of QW lasers results from the enhancement of carrier escape and the suppression of carrier capture processes by the effect of carrier heating and lattice heating. The excess carrier heating is due to the finite lifetime of longitudinal optical phonons (i.e., effects of hot phonons).

关键词： semiconductor lasers

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Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model

Optimization of 3D-SMODFETs on GaAs and InP substrates with ...

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Martin, Glenn H. Seaford, Matthew L. Spencer, Robert Braunstein, Juergen Eastman, Lester F. Cornell Univ Ithaca United States

Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.

关键词： Field effect transistors

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