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Integration of GaAs vertical-cavity surface emitting lasers into silicon circuitry

Integration of GaAs vertical-cavity surface emitting lasers ...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Fathollahnejad, H. Daryanani, S. Mathine, D.L. Chuang, C.P. Droopad, R. Maracas, G.N. Arizona State Univ Tempe United States

A technique for the removal of the gallium arsenide vertical cavity surface emitting laser (VCSEL) epitaxial film from its growth substrate and reattaching it onto the unprocessed silicon substrates, as well as onto commercially available CMOS chips, is described. The process is compared to other published techniques based on its ability to integrate individual lasers or arrays of the VCSELs, laser performance before and after the integration process, metal interconnects to the circuitry and keeping the process transparent to existing Si processing. Several ways for routing the optical output from laser are also discussed.

关键词： semiconductor lasers

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Molecular beam epitaxy of Si/ZnS/Si(100) heterostructures for fabrication of silicon-based quantum devices

Molecular beam epitaxy of Si/ZnS/Si(100) heterostructures fo...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Zhou, Xiaochuan Jiang, Shan Li, Feng Spencer, Gregory F. Bate, Robert T. Kirk, Wiley P. Texas A&M Univ College Station United States

Epitaxial Si/ZnS/Si heterostructures were grown for the purpose of developing silicon-based quantum devices. An arsenic passivation technique was used on silicon surfaces for the growth of ZnS. A two-step growth method was developed for the epitaxial growth of silicon on ZnS surfaces. Using the results of TEM (transmission electron microscopy), C-V (capacitance-voltage), RHEED (reflection high energy electron diffraction), and SIMS (secondary ion mass spectroscopy), we present studies of crystal defects, density of interface states, surface structure, and compositional profiles of the heterostructural materials.

关键词： Heterojunctions

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Microelectromechanical systems

Microelectromechanical systems

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Mehregany, Mehran Huff, Michael A. Case Western Reserve Univ Cleveland United States

Integrated circuit technology has brought unprecedented computational power ever closer to the point of use, revolutionizing the design of electronics products and enabling the creation of entirely new product categories. Microelectromechanical systems (MEMS) promise to do the same for electromechanical systems through miniaturization, batch fabrication, and integration with electronics, thereby enabling the development of smart products by providing the required interface between the available computational power and the physical world through the perception and control capabilities of microsensors and microactuators. Micromechanical devices and systems are inherently smaller, lighter, and faster than their macroscopic counterparts, and in many cases are also more precise. MEMS devices are emerging as product differentiators in markets such as automotive, aerospace, industrial process control, electronics instrumentation, office equipment, appliances, and telecommunications. This paper will describe the more commonly employed fabrication techniques of MEMS technology and review several examples of MEMS devices under development at CWRU and elsewhere.

关键词： Microelectromechanical devices

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Design and fabrication of monolithic millimeter wave optical receiver

Design and fabrication of monolithic millimeter wave optical...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Burm, Jinwook Litvin, Kerry I. Martin, Glenn H. Schaff, William J. Davidson, Andrew C. Jaspan, Martin A. Eastman, Lester F. Marietta, Martin Cornell Univ Ithaca United States

The optical receiver circuits were fabricated monolithically on GaAs based materials. The optical receivers were to detect the modulated signal at 44 GHz transmitted through optical carrier. MSM photodetectors and SMODFET's were employed in the receiver circuits. The photodetector layer was specially designed for the high quantum efficiency for 770 nm light by using Bragg reflector layers and cap layer. InGaAs channel SMODFET's, adapted for the post-detection amplifiers, exhibited ft of 90 GHz and fmax of 100 GHz. For DC bias lines and isolations, ground plane capacitors and thin film isolated bias lines were used. The circuit was designed and fabricated by conjugately matching the S-parameters of each device at 44 GHz through CPW transmission lines. The receivers were measured up to 40 GHz, showing about 3 dB gain at 39 GHz.

关键词： Photodetectors

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Dual-gate HFET with closely spaced electrodes on InP

Dual-gate HFET with closely spaced electrodes on InP

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Lee, L Long, W Strahle, S Geiger, D Henle, B Kunzel, H Mittermeier, E Erben, U Spitzberg, U Kohn, E UNIV ULM DEPT ELECTRON DEVICES & CIRCUITSD-89069 ULMGERMANY

ISBN: (纸本)0780324420

An InGaAs/AlInAs dual-gate HFET with two closely spaced gate electrodes deposited in a common gate recess has been fabricated on InP substrate. The configuration consists of an 0.25 /spl mu/m RF-driven /spl Gamma/-gate overlapping to the source and a DC-trapezoid control gate placed approximately 0.2 /spl mu/m behind the /spl Gamma/-gate. The fabrication sequence allows one to test the device as a single gate FET before deposition of the second gate. The influence of the second gate on the transistor performance was characterized under DC- and RF-conditions. The device current could be fully modulated by either gate and the small signal RF behaviour could be tested in all modes of operation with the second gate RF-grounded. In comparison with the single gate FET, the dual-gate configuration shows an essentially reduced feedback behaviour with reduced C/sub dg/ and G/sub ds/ however, slightly increased input capacitance C/sub gs/. At V/sub ds/=1.2 V f/sub max/ is enhanced by 40%, from 190 GHz to 260 GHz, whereas the gain-bandwidth product decreases from 90 GHz to 70 GHz. The increase of f/sub max/ is strongly drain bias dependent and increases steeply beyond V/sub ds/=1.0 V.

关键词： Field effect transistors

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Far infrared Ga1-xInxSb/InAs-based strained-layer superlattice detectors grown by OMVPE

Far infrared Ga1-xInxSb/InAs-based strained-layer superlatti...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Jahan, Mirza M. Anwar, A.F.M. Univ of Connecticut Storrs United States

Strained layer, type II Ga1-xInxSb/InAs superlattice detectors operating at 9 micrometer have been grown for the first time by OMVPE. The material was grown by an atmospheric pressure OMVPE reactor using high purity metallorganic precursors. The absorbance characteristics measured by Fourier transform infrared spectroscopy (FTIR) showed a shift in the cutoff wavelength from 1.8 to 2.5 micrometer when the In mole fraction was varied from 0.1 to 0.4 in Ga1-xInxSb layer. The use of InAs in Ga0.6In0.4Sb/InAs structures introduces strain and lambda shifts from 2.5 to 9 micrometer as confirmed by FTIR.

关键词： semiconductor superlattices

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GaInP/GaInAs/GaAs structures for high performance MODFETs, design, growth procedure, hall data and device properties

GaInP/GaInAs/GaAs structures for high performance MODFETs, d...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Bachem, KH Pletschen, W Maier, M Wiegert, J Winkler, K Pereiaslavets, B Eastman, LF Tobler, H Dickman, J Narozny, P FRAUNHOFER INST APPL SOLID STATE PHYS D-79108 FREIBURGGERMANY

ISBN: (纸本)0780324420

A new type of GaInP/GaInAs/GaAs layer structure for MODFET devices has been developed. The novel feature of this structure is a compositionally modulated, pseudomorphic GaInP barrier which is suited to achieve record breaking two dimensional electron densities in GaInP/GaInAs/GaAs structures. Densities upwards of 3/spl times/10/sup 12//cm/sup 2/ with single-sided doping, and over 5/spl times/10/sup 12//cm/sup 2/ with double-sided doping have been obtained. Furthermore, it is demonstrated that buffer layers as thin as 2.5 nm are sufficient to achieve electron mobilities of more than 6000 cm/sup 2//Vs (RT) for electron densities of 3/spl times/10/sup 12//cm/sup 2/ in MODFET structures grown on top of these thin buffer layers. MODFET devices fabricated on this type of heterostructure using only 10 nm thick buffers have output transconductances and pinch off characteristics competing favourably with AlGaAs/GaInAs/GaAs MODFET devices fabricated on MBE grown structures. Intrinsic transconductances of 700 mS/mm and ft and fmax values of 100 and 180 GHz, respectively, demonstrate the potential of the new Al free structures.

关键词： Field effect transistors

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Bias dependence of RF power characteristics of 4H-SiC MESFET's

Bias dependence of RF power characteristics of 4H-SiC MESFET...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Moore, K. Weitzel, C. Nordquist, K. Pond III, L. Palmour, J. Allen, S. Carter Jr., C. Motorola Phoenix Corporate Research Lab Tempe United States

4H-SiC MESFET's have been fabricated, packaged, and RF power tested under a wide range of bias conditions, ranging from Class A to Class B gate bias, and from 10 V to 50 V drain bias. Peak device performance included output power of 30.2 dBm (3.1 W/mm) at the 3 dB compression point and 38.9% power added efficiency in Class A operation, and 65.7% power added efficiency with 28.8 dBm (2.27 W/mm) maximum output power under Class B conditions. We believe this to be both the highest power density and the highest power added efficiency reported for a SiC MESFET.

关键词： MESFET devices

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Vapor phase 6H and 4H SiC epitaxy for high-speed devices

Vapor phase 6H and 4H SiC epitaxy for high-speed devices

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Rowland, L.B. Burk Jr., A.A. Clarke, R.C. Siergiej, R.R. Sriram, S. Augustine, G. Hobgood, H.M. Driver, M.C. Westinghouse Science and Technology Cent Pittsburgh United States

Silicon carbide (SiC), a wide bandgap semiconductor, is currently being developed for enhanced high-power and high-temperature microwave devices. Silicon carbide wafers, now available at up to two-inch diameter with resistivities from 0.02 Ω-cm to 107 Ω-cm, still exhibit features such as micropipes, surface scratches, and inclusions of other polytypes. Vapor phase epitaxy (VPE) of 6H and 4H SiC, typically performed between 1450 and 1600 °C using silane and propane reagents, is impacted greatly by the quality of these wafers and the conditions used during in situ etching or the initial stages of growth. By optimizing growth conditions, device-quality homoepitaxial 6H and 4H-SiC has been grown with near specular morphology, background doping levels of less than 1×1014 cm-3, and controlled n- and p-type doping from less than 5×1015 cm-3 to greater than 1×1019 cm-3.

关键词： Semiconducting silicon compounds

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Selectively regrown ohmic contacts for high frequency and low noise FETs

Selectively regrown ohmic contacts for high frequency and lo...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Kiziloglu, Kursad Keller, Bernd P. Chavarkar, Prashant M. DenBaars, Steven P. Mishra, Umesh K. Univ of California Santa Barbara United States

We investigate highly doped selectively regrown GaInAs ohmic contacts to GaInAs channel FETs to obtain a stable, reliable, and low resistance contact technology. We selectively regrow n+ GaInAs on various doped-channel FET structures and standard and doped-channel HEMTs. For lower doping concentrations on the regrown GaInAs (n1.5·1018 cm-3), we encounter instabilities at higher temperatures in the contacts when HF is employed in the processing steps. However, we achieve temperature stable contacts with a contact resistance of 0.1 Ω·mm regardless of the sample's exposure to HF when higher doping (n7·1018 cm-3) is incorporated in the regrowth process. We believe that we will be able to use this stable and low resistance contact technology to achieve high performance microwave transistors.

关键词： Ohmic contacts

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