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high-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor

High-performance AlInAs/GaInAs/InP DHBT X-band power cell wi...

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chen, Mary Nguyen, Chanh Liu, Takyiu Rensch, David Hughes Research Lab Malibu United States

We report for the first time large-signal performance of a multi-finger AlInAs/GaInAs/InP DHBT power cell with epitaxial InP emitter ballast resistors. The region of safe operation is extended using epitaxial InP emitter resistor structures. The thermal stability of power cells with this structure is increased compared with devices with similar layer structures but without the ballast epi-resistors. The power cell consists of ten 2-μm×30-μm emitter fingers. Under DC bias, the device is unconditionally stable up to Jc = 5×104 Acm-2 at Vce = 6 V, and the upper range of bias is limited by burn-out (on unthinned wafer) rather than by current hogging. An output power of 1.6 W, corresponding to a high power density of 5.3 W/mm, and a power-added efficiency of 62% were measured on wafer at 9 GHz at Vce = 12 V under class B CW operation. The output power can be increased at the expense of PAE. At a PAE of 54%, an output power of 1.9 W, corresponding to an impressive power density of 6.3 W/mm is obtained.

关键词： Heterojunction bipolar transistors

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ZnS0.07Se0.93 metal-semiconductor field effect transistor

ZnS0.07Se0.93 metal-semiconductor field effect transistor

引用

Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Wang, Albert Z.H. Anderson, Wayne A. Wu, B.J. Haase, M. Mountziaris, T.J. State Univ of New York at Buffalo Amherst United States

We report the fabrication and test data for a n-ZnS0.07Se0.93 metal-semiconductor field effect transistor (MESFET). A ZnSSe FET could be a key element in opto-electronic integration employing light emitting devices, metal-semiconductor-metal photo-detectors (MSM-PD) and MESFET pre-amplifiers. Wide bandgap ZnS0.07Se0.93 is lattice-matched to the GaAs substrate and posses the `light hardness' property. A mesa active island was used to isolate devices. Source and drain (S/D) ohmic contacts and gate Schottky contact were formed by Cr/In/Cr and Au, respectively. Recess etching and self-aligning techniques were adopted. Depletion mode FET's with varying gate width-to-length ratio of W/L = 200 μm/20 μm, 200 μm/4 μm and 200 μm/23 μm were fabricated and the terminal parameters of a 2 μm FET are as follows: the turn-on voltage, Von1.75 V, the pinch-off voltage, Vp = -13 V, the unit transconductance, gm 8.73 mS/mm, and the breakdown voltage without a gate-drain bias, BV28 V.

关键词： MESFET devices

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Resonant tunneling and quantum integrated circuits

Resonant tunneling and quantum integrated circuits

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A.C. Seabaugh Corporate Research & Development Texas Instruments Inc. Dallas TX USA

devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxially-grown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed.

关键词： Resonant tunneling devices Integrated circuit technology Logic devices RLC circuits Integrated circuit interconnections Analog-digital conversion Millimeter wave technology Diodes Voltage Optical scattering

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Integrated antennas and quasi-optical device arrays

Integrated antennas and quasi-optical device arrays

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： R.A. York Department of Electrical and Computer Engineering University of California Santa Barbara CA USA

Integrated antennas have been the focus of increasing research activity, particularly for millimeter-wave power combining and "quasi-optical" arrays. This paper reviews some of the work in integrated antennas for oscillator and amplifier arrays carried out at UCSB. This includes unusual phenomena involving coupled-oscillator systems that have led to novel beam scanning concepts for cost-effective mm-wave radar and imaging systems.

关键词： Antenna arrays Optical amplifiers Optical arrays Transmitting antennas circuits Frequency high power amplifiers Millimeter wave technology Stimulated emission Optical sensors

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Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes

Co-integration of high speed heterojunction bipolar transist...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： W.L. Chen G.O. Munns X. Wang G.I. Haddad Solid-State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes (TDs), forming Tunneling Bipolar Transistors (TBTs), is proposed and experimentally realized for the first time. The TBTs offer a new family of negative differential resistance transistors for applications in ultra-high speed and ultra-compact digital circuits. Especially, they can be incorporated into Si integrated circuits easily without complicated growth effort. In this paper, Si and InGaAs TDs will be described and compared in terms of device performance. Furthermore, the idea of a TBT will be demonstrated using a CBE grown structure and hybrid integration of Si devices.

关键词： Heterojunction bipolar transistors Indium gallium arsenide semiconductor diodes Digital circuits Substrates Doping Tunneling semiconductor materials HEMTs MODFETs

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A novel technique for fabricating semiconductor nanodevice arrays on silicon

A novel technique for fabricating semiconductor nanodevice a...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： S.P. McGinnis B. Das Microelectronic Systems Research Center Department of Electrical & Computer Engineering West Virginia University Morgantown WV USA

We have developed a novel low cost nanogrowth technology for the fabrication of periodic arrays of semiconductor quantum dots on silicon with good device size uniformity. The technique utilizes material growth on a preformed template formed by electrochemical etching of aluminum on silicon. The template contains a periodic array of pores in which the semiconductor material is synthesized. The technique is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, VLSI compatible and has the potential for integration of quantum dot devices with silicon integrated circuits.

关键词： Silicon Fabrication Quantum dots semiconductor materials Costs Nanoscale devices Etching Aluminum Integrated circuit synthesis Integrated circuit reliability

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Hot electron transistors on silicon substrate (HESS)-a computational prototyping

Hot electron transistors on silicon substrate (HESS)-a compu...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： E.C. Kan Gyo-Young Jin R.W. Dutton Center for Integrated Systems University of Stanford Stanford CA USA

Operational principles of hot electron transistors based on the real space transfer effect are examined. New device configurations on a silicon substrate without use of heterojunctions are proposed. Design trade-offs for different operating conditions are briefly summarized. The new designs are computationally prototyped by a full-band Monte Carlo device simulator.

关键词： Electrons Silicon Prototypes MOSFETs Heterojunctions P-n junctions Space heating Tunneling III-V semiconductor materials Virtual prototyping

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Monolithic integrated optoelectronic circuits

Monolithic integrated optoelectronic circuits

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M. Berroth W. Bronner T. Fink J. Hornung V. Hurm T. Jakobus K. Kohler M. Lang U. Nowotny Z.-G. Wang Fraunhofer Institute for Applied Solid Slate Physics Freiburg im Breisgau Germany

Monolithic integration of lasers and photodetectors with electronic circuits promises higher bandwidth, improved manufacturability, smaller size, lower power and hence lower costs. This paper reviews the activities of... 详细信息

关键词： Integrated optoelectronics Monolithic integrated circuits Power lasers Photodetectors Electronic circuits Bandwidth Integrated circuit manufacture Costs Photonic integrated circuits Optical fiber communication

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Optimization of the optical guide design and cavity design of multiple quantum well lasers for efficient microwave optical links

Optimization of the optical guide design and cavity design o...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： R.M. Spencer S.S. O'Keefe J. Greenberg G.H. Martin J. Braunstein W.J. Schaff L.F. Eastman Chin-Yi Tsai School of Electrical Engineering and the Nutional Nanofabrication Fucility Cornell University Ithaca NY USA School of Applied Physics and the National Nunofubricutiun Fucility Cornell University Ithaca NY USA Emerging Technologies Research Center School of Electrical Engineering and Manufacture De Montfort University Leicester UK

We show the results of an experimental and theoretical investigation into the present limitations on the overall small signal direct modulation bandwidth in semiconductor lasers. The influences of the optical guide an... 详细信息

关键词： Optical design Design optimization Quantum well lasers Quantum mechanics semiconductor lasers high speed optical techniques Laser theory Optical modulation Masers Bandwidth

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Tunable, micromachined parallel-plate transmission lines

Tunable, micromachined parallel-plate transmission lines

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A.A. Ayon N.J. Kolias N.C. MacDonald Nuclear Science and Engineering Cornell University Ithaca NY USA Cornell University Ithaca NY US

We have fabricated for the first time cantilevered, tunable, out of the plane transmission lines and demonstrated the active change of impedance levels using banks of finger capacitors as motors. The tunable lines are fabricated in a coplanar waveguide-like configuration thereby making them compatible with existing monolithic millimeter wave devices. The architecture can be readily applied to make variable matching circuits for antennas, and cascading several in series, variable length stubs. The process provides enough flexibility for design variations and future enhancements, for instance, n-switching devices, filters and phase array antennas. This novel device is simple, monolithic, does not require any high temperature steps, and can therefore, be readily incorporated to other processes.

关键词： Transmission lines Tunable circuits and devices Coplanar transmission lines Phased arrays Distributed parameter circuits Impedance Fingers Capacitors Coplanar waveguides Millimeter wave circuits

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