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检索条件"任意字段=IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits"

共 532 条记录，以下是131-140 订阅

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Cascaded self-induced holography: a new fabrication technology for optoelectronics

Cascaded self-induced holography: a new fabrication technolo...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chih-Hsien Lin Zuhua Zhu Yu-Hwa Lo School of Electrical Engineering Cornell University Ithaca NY USA

ISBN: (纸本)0780324420

We present a new method of fabricating submicron gratings with a high filling factor for optoelectronic devices from a glass mask. The glass mask has gratings on both sides with a period of at least four times of the final feature size. By modifying the grating periods on both sides of the glass mask, one can achieve multiple-period gratings with a very fine period spacing for advanced wavelength division multiplexing (WDM) devices. In this paper, we demonstrate 0.5 /spl mu/m second-order gratings for 1.55 /spl mu/m distributed feedback (DFB) lasers and gratings with a 6 /spl Aring/ period difference for WDM laser arrays using only optical sources.

关键词： Holography Gratings Distributed feedback devices Glass Wavelength division multiplexing Laser feedback Optical arrays Optical device fabrication Filling Optoelectronic devices

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The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry

The integration of GaAs vertical-cavity surface emitting las...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： H. Fathollahnejad S. Daryanani D.L. Mathine C.P. Chuang R. Droopad G.N. Maracas Department of Electrical Engineering Center for Solid State Electronic Research Arizona State University Tempe AZ USA Motorola Phoenix Corporate Research Laboratories Tempe AZ USA

An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.

关键词： Vertical cavity surface emitting lasers Gallium arsenide Surface emitting lasers Silicon circuits Substrates Optical films Optical arrays Etching Optical device fabrication

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high performance microwave elements for SiGe MMICs

High performance microwave elements for SiGe MMICs

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M. Case P. MacDonald M. Matloubian M. Chen L. Larson D. Rensch Hughes Research Laboratories Inc. Malibu CA USA

We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 /spl mu/m thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts.

关键词： Silicon germanium Germanium silicon alloys MMICs Microwave devices Dielectric substrates Dielectric losses Costs Manufacturing Microwave theory and techniques Surface waves

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Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures

Resonant tunneling in tunneling hot-electron transfer amplif...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J.L. Huber T.A. Kramer M.A. Reed T.S. Moise Y.-C. Kao A.C. Seabaugh W.R. Frensley C.L. Fernando Yale University USA Texas Instruments Central Research Laboratories India University of Technology Dallas USA

We have investigated a series of Tunneling Hot-Electron Transfer Amplifiers (THETAs) fabricated from the InGaAlAs system with abrupt collector-base isolation barriers. The turn-on characteristics of these structures can be modified by resonant tunneling, via a confined state in the base, occurring just before the expected ballistic turn-on.

关键词： Resonant tunneling devices Carrier confinement Temperature Laboratories Instruments circuits Electrons Resonance Digital video broadcasting Voltage

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Monte Carlo study of electron and hole transport for high speed and low-power sub-0.1 /spl mu/m GaAs circuits

Monte Carlo study of electron and hole transport for high sp...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Y. Awano Y. Tagawa M. Shima Fujitsu Laboratories Limited Atsugi Japan

In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 /spl mu/m devices show that, under the electric field of 100 kV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

关键词： Monte Carlo methods Charge carrier processes Gallium arsenide Electrons Silicon Lattices Temperature circuits Light scattering Probability

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InP-based 28 GHz integrated antennas for point-to-multipoint distribution

InP-based 28 GHz integrated antennas for point-to-multipoint...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M.J. Vaughan R.C. Compton K.Y. Hur R.A. McTaggart School of Electrical Engineering Cornell University Ithaca NY USA Advanced Device Center Raytheon Company Andover MA USA

Quasi-optics offers an attractive means of creating moderate-power solid-state millimeter-wave transmitters. This paper presents the development of a 28 GHz oscillator, including an InP power HEMT and integrated with a planar, endfire antenna, which is used in testing metal reflectors designed for generating omni-directional patterns for point-to-multipoint distribution. Results of this work give insight into tailoring the reflectors for omni-directional active arrays.

关键词： Indium phosphide HEMTs Antenna arrays Indium gallium arsenide Etching Oscillators Reflector antennas Power generation high power microwave generation Fingers

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Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

Long wavelength VCSELs using AlAs/GaAs mirrors and strain-co...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： C.L. Chua Z.H. Zhu Y.H. Lo M. Hong R. Bhat School of Electrical Engineering Cornell University Ithaca NY USA AT and T Bell Laboratories Inc. Murray Hill NJ USA Bellcore NJ USA

We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold curre... 详细信息

关键词： Vertical cavity surface emitting lasers Gallium arsenide Mirrors Pulse measurements Quantum well devices Distributed Bragg reflectors Temperature Current measurement Wavelength measurement Threshold current

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Micromachined optical sensor

Micromachined optical sensor

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A.T.T.D. Tran D. Haronian N.A. Switz Y.H. Lo N. MacDonald School of Applied and Engineering Physics Cornell University Ithaca NY USA School of Electrical Engineering Cornell University Ithaca NY USA

We report the fabrication and testing of a surface micromachined optical deformation sensor. The sensing element is a suspended mirror which forms part of a Fabry-Perot interferometer. In the presence of an external force, shift in interference fringe as well as change in power spectral density was observed. The sensor exhibits linear response to external applied force and has resonant frequency of 15 kHz for a symmetric double serpentine springs geometry.

关键词： Optical sensors Force sensors Optical device fabrication Testing Optical interferometry Mirrors Fabry-Perot interferometers Interference Resonant frequency Springs

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Simulation of hot electron transport in semiconductor devices

Simulation of hot electron transport in semiconductor device...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： C.L. Fernando W.R. Frensley R.C. Bowen Program in Electrical Engineering Erik Jonsson School of Engineering and Computer Science University of Texas Dallas Richardson TX USA

A numerical technique based on semiclassical transport theory is presented to describe highly non-equilibrium electron transport in submicron devices. Open boundary conditions, polar optical phonon scattering, and full band structures are employed in our calculation. Special treatment of the abrupt junctions of potential profile is included in our model, so is the quantum reflection occurring around heterojunctions. The technique has been incorporated into an interactive program in which users may specify a region where the calculation is to be performed. Our results show that the polar optical phonon scattering has an important impact on the electron transport in hot electron transistors.

关键词： semiconductor devices Optical scattering Phonons Particle scattering Boundary conditions Electron optics Equations Optical reflection Heterojunctions Distribution functions

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Rigorous treatment of the electro-thermal behaviour of multi-finger microwave power heterojunction bipolar transistors

Rigorous treatment of the electro-thermal behaviour of multi...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J. Schneider U. Erben H. Schumacher Department of Electron Devices and Circuits University of Ulm (EBS) Ulm Germany

A thermo-electrical model for single and multi-finger Heterojunction Bipolar Transistors (HBTs) was developed. The electrical part is based on a thermionic emission-diffusion theory. The thermal part solves the nonlinear thermal boundary problem using an orthogonal function approximation. The high frequency performance of the whole transistor is determined, calculating the admittance matrix of each individual emitter cell. The influence of the base bandgap, the emitter spacing and metal airbridges on the RF performance of multi-finger HBTs is determined numerically and analytically. The impact of the emitter contact as a thermal shunt is demonstrated.

关键词： Fingers Electromagnetic heating Heterojunction bipolar transistors Microwave devices Gallium arsenide Thermal conductivity Temperature Charge carrier processes Electron emission Thermionic emission

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