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检索条件"任意字段=IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits"

共 532 条记录，以下是151-160 订阅

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30 W VHF 6H-SiC power static induction transistor

30 W VHF 6H-SiC power static induction transistor

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： R.C. Clarke R.R. Siergiej A.K. Agarwal C.D. Brandt A.A. Burk A. Morse P.A. Orphanos Westinghouse Science and Technology Center Pittsburgh PA USA Westinghouse Licensing Corp New York NY US Sci. & Technol. Center Westinghouse Electr. Corp. Pittsburgh PA USA

6H-SiC Static Induction Transistors (SITs) have been demonstrated, using SiC specific semiconductor processing technologies such as, VPE, reactive ion etching and self aligned sidewall Schottky gates. Under test conditions, 6H-SiC SITs developed 38 W of output power at 175 MHz, a power added efficiency of 60%, and an associated gain of 10 dB. The maximum channel current was 300 mA/cm, and the maximum blocking voltage was 200 V.

关键词： Voltage Electron mobility Space charge Silicon carbide Geometry Dielectric constant Dielectric materials semiconductor materials Etching Testing

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Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model

Optimization of 3D-SMODFETs on GaAs and InP substrates with ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： G.H. Martin M.L. Seaford R. Spencer J. Braunstein L.F. Eastman Geo Centers Inc. Eatontown NJ USA School of Electrical Engineering and National Nanofabrication Facility Cornell University Ithaca NY USA Fraunhofer Institute for Applied Solid Slate Physics Freiburg im Breisgau Germany

Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.

关键词： Gallium arsenide Indium phosphide Analytical models MODFETs HEMTs Substrates Sheet materials Lattices Impurities Photonic band gap

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Cryogenic high frequency operation of tunneling hot-electron transfer amplifiers

Cryogenic high frequency operation of tunneling hot-electron...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M.R. Murti J. Laskar M. Hamai M. Nishimoto T.S. Moise School of Electrical Engineering and Microelectronics Research Center Georgia Institute of Technology Atlanta GA USA Space and Electronics Group TRW Inc. Redondo Beach CA USA Corporate Research and Development Texas Instruments Inc. Dallas TX USA

In this paper, we describe the cryogenic high speed operation of fixed and composition bandgap collector THETA devices in which the In composition within the 40 nm base has been varied from 53% to 62%. The cryogenic on-wafer measurement system at the Georgia Institute of Technology has been used to collect S-parameters at 18 K and 300 K. Initial results indicate that, at a constant bias, f/sub T/ increases by almost a factor of 2, from 15 GHz to 30 GHz, as the temperature is reduced from 300 K to 18 K primarily as the result of increased current gain. Detailed small-signal model development is presented to help estimate performance of scaled THETA structures at room temperature.

关键词： Cryogenics Frequency Tunneling Temperature Space technology Photonic band gap Current measurement Scattering parameters Lattices Heterojunction bipolar transistors

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A theoretical investigation for the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the limitations of the modulation bandwidth in high-speed quantum well lasers

A theoretical investigation for the effects of spectral hole...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chin-Yi Tsai Yu-Hwa Lo R.M. Spencer L.F. Eastman Chin-Yao Tsai Emerging Technologies Research Center School of Engineering and Manufacture De Montfort University Leicester UK School of Electrical Engineering Cornell University Ithaca NY USA 4. Physikalisches Institut Universität Stuttgart Stuttgart Germany

ISBN: (纸本)0780324420

We present a theoretical model to investigate the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the modulation response in quantum well (QW) lasers. We find that the degradation of the resonant frequency that limits the modulation bandwidth of QW lasers results from the enhancement of carrier escape and the suppression of carrier capture processes by the effect of carrier heating and lattice heating. The excess carrier heating is due to the finite lifetime of longitudinal optical phonons (i.e., effects of hot phonons).

关键词： Phonons Heating Laser modes Laser theory Quantum well lasers Hot carriers Quantum mechanics Degradation Resonant frequency Bandwidth

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high performance AlGaInP LEDs using reactive thermally evaporated transparent conducting indium-tin-oxide (ITO)

High performance AlGaInP LEDs using reactive thermally evapo...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Y.H. Aliyu D.V. Morgan H. Thomas Electronics Division Cardiff School of Engineering University of Wales Cardiff UK

Reactive thermally evaporated transparent conducting Indium-Tin-Oxide (ITO) layers are used as window material and current spreading layer on AlGaInP Light Emitting Diodes (LEDs). The sheet resistance of the ITO films deposited is of the order 4.5 ohm/sq with up to 90% transmission in the visible region of the spectrum. Optimum thickness of the p and n-type AlGaInP cladding and the top p/sup +/GaAs epitaxial layers were determined. The LEDs fabricated emit light with a peak wavelength (/spl lambda/p) at 600 nm and Full Width at Half Maximum (FWHM) of 15 nm. A forward voltage of 1.71 V at 20 mA was obtained. In all cases the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices.

关键词： Light emitting diodes Thermal conductivity Conducting materials Optical materials Substrates MOCVD Indium tin oxide Optical devices Photonic band gap Absorption

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Microelectromechanical systems

Microelectromechanical systems

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M. Mehregany M.A. Huff Electronics Design Center Department of Electrical Engineering and Applied Physics Case Western Reserve University Cleveland OH USA

Integrated circuit technology has brought unprecedented computational power ever closer to the point of use, revolutionizing the design of electronics products and enabling the creation of entirely new product categories. Microelectromechanical systems (MEMS) promise to do the same for electromechanical systems through miniaturization, batch fabrication, and integration with electronics, thereby enabling the development of smart products by providing the required interface between the available computational power and the physical world through the perception and control capabilities of microsensors and microactuators. Micromechanical devices and systems are inherently smaller, lighter, and faster than their macroscopic counterparts, and in many cases are also more precise. MEMS devices are emerging as product differentiators in markets such as automotive, aerospace, industrial process control, electronics instrumentation, office equipment, appliances, and telecommunications. This paper will describe the more commonly employed fabrication techniques of MEMS technology and review several examples of MEMS devices under development at CWRU and elsewhere.

关键词： Microelectromechanical systems Consumer electronics Micromechanical devices Fabrication Microelectromechanical devices Aerospace industry Integrated circuit technology Product design Electromechanical systems Computer interfaces

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Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors

Comparison of the load-pull power characteristics of common-...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A. Samelis D. Pavlidis D.R. Pehlke W.J. Ho J.A. Higgins A. Sailer Solid State Electronics Laboratory University of Michigan Ann Arbor MI USA Science Center Division Rockwell International Thousand Oaks CA USA

The power characteristics of common-emitter and common-base AlGaAs-GaAs based HBTs are compared using on-wafer load/pull measurements. Gain compression is more pronounced for common-base HBTs. The sensitivity of the device gain on the load termination conditions is smaller for common-emitter than common-base HBTs. Device self-bias is strongly dependent on load termination at high power levels for CE but not for CB HBTs. As a result, a unique load termination exists resulting in both maximum gain and power added efficiency in the case of CB HBTs. In the case of CE HBTs optimum load terminations can be selected through tradeoffs between the output power and efficiency load-pull contours.

关键词： Power generation Power amplifiers Gallium arsenide Power measurement Heterojunction bipolar transistors Frequency Tuners Bipolar transistors Solid state circuits Laboratories

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Thermal analysis and characterization of thermally shunted AlGaAs/GaAs heterojunction bipolar transistors

Thermal analysis and characterization of thermally shunted A...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： L.L. Liou D. Barlage J. Barrette C. Bozada R. Dettmer T. Jenkins R. Lee M. Mack J. Sewell Solid State Electronics Directorate Wright Laboratories OH USA

Analytical models were developed for thermal analysis of thermally-shunted heterojunction bipolar transistors. The dependence of junction temperature on thermal shunt landing pad geometry was determined using a transmission-line-like model. Assuming a nearest neighbor approximation, self-induced and coupled thermal resistances were calculated, and an equivalent thermal circuit was developed. The temperature distribution of the multiple-emitter element thermally-shunted devices was calculated and discussed. The presented model gives a guideline for thermal shunt design. Thermally-shunted devices with different emitter designs were fabricated and tested. Thermal resistances for both emitter bar and circular dot-array designs are smaller than those reported for non-thermal shunt devices by 25 to 50%. The analytical model found good agreement with the experimental measurements of fabricated devices.

关键词： Thermal resistance Analytical models Heterojunction bipolar transistors Temperature dependence Geometry Solid modeling Nearest neighbor searches Coupling circuits Temperature distribution Guidelines

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Monte Carlo simulation of the fundamental photodetector response on sub-picosecond time scales

Monte Carlo simulation of the fundamental photodetector resp...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J.E. Bair J.P. Krusius Schools of Electrical Engineering and Applied Engineering Physics Cornell University Ithaca NY USA

The fundamental response of transit time photodetectors with picosecond response times has been analyzed through Monte Carlo simulation of MSM photodiodes. The fundamental response was found to consist of three components: a fast initial peak due to velocity overshoot in the /spl Gamma/ valley electrons, a slow secondary steady state electron response, and a slow steady state hole response. The relative magnitude of the two electron responses was found to be extremely sensitive to the device length, the electric field, and the energy of the exciting photons, such that, for a given device length and photon energy there is an optimal electric field for which the electron transit time is minimized. The hole transit time was observed to decrease monotonically with increasing electric field, thus making it difficult to optimize the electron and hole responses simultaneously. Accounting for the hole response was found to increase the magnitude of the optimal field. The detector response was also observed to degrade significantly as the energy of the exciting photons was increased.

关键词： Photodetectors Time factors Delay Charge carrier processes Detectors Optical sensors Physics Steady-state Electrons Optical scattering

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A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs

A novel high sensitivity p-i-n MODFET photodetector using lo...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： S. Subramanian D. Schulte L. Ungler T.K. Plant J.R. Arthur Department of Electrical and Computer Engineering Oregon State University Corvallis OR USA Dept. of Electr. & Comput. Eng. Oregon State Univ. Corvallis OR USA

A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of /spl sim/95 A/W in the MODFET mode which is /spl sim/6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer.

关键词： PIN photodiodes MODFETs HEMTs Photodetectors Gallium arsenide Temperature Molecular beam epitaxial growth P-i-n diodes Substrates Epitaxial layers

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