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检索条件"任意字段=IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits"

共 532 条记录，以下是11-20 订阅

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Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates

Validation of an analytical large signal model for AlGaN/GaN...

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Green, Bruce M. Kim, Hyungtak Tilak, Vinayak Shealy, James R. Smart, Joseph A. Eastman, Lester F. School of Electrical Engineering Cornell University Ithaca NY 14853 United States

An analytical nonlinear model describing AlGaN/GaN HEMT's grown on SiC substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with 16 GHz power sweep data show good agreement between the model predictions of a 3.3 W/mm power density (18% PAE) and the measurements for these devices.

关键词： high electron mobility transistors

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A modified drift-diffusion model for sub-micron devices

A modified drift-diffusion model for sub-micron devices

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Wu, Shangli Anwar, A.F.M. Electrical and Computer Engineering University of Connecticut Storrs CT 06269-2157 United States

It is well recognized that the use of low field mobility u and the diffusion constant D in the drift-diffusion equation becomes questionable in narrow based HBTs or short gate FETs. For short samples the transport parameters not only become field and position dependent, but also initial distribution dependent. Moreover, the diffusion constant, which is defined for a stationary process, becomes an ill-defined parameter in very short devices. In this paper a modified drift-diffusion model that can be used in sub-micron devices is reported.

关键词： Heterojunction bipolar transistors

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high efficiency GaN cascode-connected HEMT nonuniform distributed amplifier

High efficiency GaN cascode-connected HEMT nonuniform distri...

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Lee, Sungjae Green, Bruce M. Lee, Jongwook Webb, Kevin J. Eastman, Lester F. Sch. of Elec. and Comp. Engineering Purdue University West Lafayette IN 47907 United States School of Electrical Engineering Cornell University Ithaca NY 14853 United States

A monolithic gallium nitride (GaN) cascode-connected HEMT distributed amplifier has been designed which offers increased efficiency by removal of the drain line dummy load. This amplifier uses a cascode gain cell to provide higher gain and power with a broadband (DC through 12 GHz) frequency response. A three-stage nonuniform distributed amplifier has been designed and fabricated.

关键词： high electron mobility transistors

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Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation

Silicon carbide IMPATT oscillators for high-power microwave ...

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Yuan, Luo Melloch, Michael R. Cooper, James A. Webb, Kevin J. Sch. of Elec. and Comp. Engineering Purdue University West Lafayette IN 47907 United States

A large-signal simulation study has been performed on 4H-SiC IMPATT oscillators. Peak power capability of more than 1 kilowatt, with greater than 15% power efficiency, was predicted for both Ka-band and X-band SiC IMPATT diodes. Prototype devices with single-drift regions and hi-lo doping profiles have been designed and fabricated. The first working SiC IMPATT oscillator has been demonstrated.

关键词： IMPATT diodes

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Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

Growth of InN for heterojunction field effect transistor app...

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Schaff, William J. Lu, Hai Hwang, Jeonghyun Wu, Hong School of Electrical Engineering Cornell University Ithaca NY 14853 United States

InN is predicted to exhibit higher saturation velocity than GaN for high Electron Mobility Transistor (HFET) applications. No field effect transistors have yet been made with InN channels because, to date, InN has been only prepared with undoped electron concentrations near 1x1020 cm-3. In this work growth of InN by the migration enhanced epitaxy (MEE) variation of the molecular beam epitaxy (MBE) technique has been performed. Electron densities down to lower 1018 cm-3 have been obtained over a range of growth conditions with 300K mobilities in the range of 300-500cm2/Vs.

关键词： Semiconducting indium compounds

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Fabrication and characterization of RTD-HBT inverter

Fabrication and characterization of RTD-HBT inverter

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Lin, C.-H. Yang, K. Gonza'lez, A.F. East, J.R. Mazumder, P. Haddad, G.I. Chow, D.H. Warren, L.D. Dunlap, H.L. Roth, J.A. Thomas III, S. Ctr. High Frequency Microelectron. Dept. of Elec. Eng. and Comp. Sci. The University of Michigan Ann Arbor MI 48109 United States HRL Laboratories 3011 Malibu Canyon Road Malibu CA 90265 United States

A static inverter was studied to explore RTD-based logic circuit behavior. Studies on output characteristics and power dissipation at high frequencies were included. To determine the maximum operating speed of the inverters, ring oscillators based on three stages of static inverters were fabricated and measured. The resultant data were analyzed in detail.

关键词： Heterojunction bipolar transistors

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Power limits of polarization-induced AlGaN/GaN HEMT's

Power limits of polarization-induced AlGaN/GaN HEMT's

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Eastman, Lester F. Green, Bruce Smart, Joseph Tilak, Vinayak Chumbes, Eduardo Kim, Hyungtak Prunty, Thomas Weimann, Nils Dimitrov, Roman Ambacher, Oliver Schaff, William J. Shealy, J. Richard Sch. of Elec. and Comp. Engineering Cornell Nanofabrication Facility Cornell University Ithaca NY 14853-5401 United States

The present and predicted limits on microwave power performance of undoped AlGaN/GaN HEMT's are presented, based on measured frequency response and drain-source breakdown voltage, both as functions of gate length. The spontaneous and piezoelectric polarization that induce the 2DEG in these HEMT's are covered. Process methods, including Si3N4 passivation are included. Thermal simulation results are shown for heat dissipation that limits channel temperature to 300°C. Microwave cw power density limits of 12.5 W/mm at 10 GHz are predicted for class A operation on thick SiC substrates.

关键词： high electron mobility transistors

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SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

引用

Proceedings of 2000 ieee/cornell conference on high Performance devices

作者： Sadler, Robert A. Allen, Scott T. Pribble, William L. Alcorn, Terry S. Sumakeris, Joseph J. Palmour, John W. Cree Inc. 4600 Silicon Drive Durham NC 27703 United States

We report here the demonstration of over 30 watts of output power at X band from a single 12-mm SiC transistor under pulsed-mode conditions. For small (250-μm) devices, we also report record high power densities of 5.2 W/mm at 3.5 GHz and 4.5 W/mm at 10 GHz. The 12-mm MESFET's were tested in hybrid amplifiers, matched with chip capacitors and microstrip lines on 15-mil alumina. When operated at 9.7 GHz at a drain bias of 50 V and gate bias of -5.5 V, these hybrid amplifiers showed pulsed output power as high as 30.5 watts at 2-dB compression, with 7.6 dB linear gain. Furthermore, output power of greater than 27 W was obtained with devices from each of three wafers processed together, indicating the good wafer-to-wafer performance of the SiC power MESFET process.

关键词： MESFET devices

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The direct modulation bandwidth of widely tunable DBR laser diodes

The direct modulation bandwidth of widely tunable DBR laser ...

引用

ieee International semiconductor Laser conference

作者： G. Morthier G. Sarlet R. Baets R. O'Dowd H. Ishii Y. Yoshikuni Department of Information Technology Ghent University IMEC Ghent Belgium Electronic and Electrical Eng University College Dublin Dublin Ireland NTT Photonics Laboratories Atsugi Kanagawa Japan

ISBN: (纸本)0780362594

Widely tunable laser diodes are currently regarded as promising light sources for WDM communication systems in which they can economically be used as spare transmitters. Their functionality could however also be useful in a number of new system concepts that are currently under investigation. For some of these new system concepts, it is relevant to know up to which bit rate the widely tunable laser diodes could be directly modulated. We have studied the direct modulation properties of 3 types of widely tunable laser diodes: the Altitun GCSR laser, the NTT SSG-DBR laser and the Marconi SGDBR laser. Different types of measurements, from parasitic-free RIN measurements to eye-diagram measurements and link experiments, have been carried out. None of the investigated laser designs however was particularly optimised for high-speed operation. From the RIN measurements, the K-factor and the theoretical maximum modulation frequency under small-signal modulation have been derived. For all investigated lasers and for typically 40 to 50 channels with a spacing of 100 GHz, the theoretical maximum modulation frequency was always found to be close to and generally over 10 GHz.

关键词： Bandwidth Tunable circuits and devices Distributed Bragg reflectors Diode lasers Laser theory Frequency modulation Light sources Wavelength division multiplexing Communication systems Transmitters

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

Proceedings of the 1995 IEEE/Cornell Conference on Advanced ...

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Proceedings of the 1995 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

The proceedings contain 68 papers from the cornell conference on advanced concepts in high speed semiconductor devices and circuits. Topics discussed include semiconductor device manufacturing techniques, wide band gap materials and devices, technologies for wireless communication, optoelectronics, modeling and speculative concepts, quantum devices, and field effect transistors and heterojunction bipolar transistors.

关键词： semiconductor device manufacture

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