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Flow modulation growth of III-V compound semiconductors using a multichamber OMVPE reactor

Flow modulation growth of III-V compound semiconductors usin...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Pitts, B.L. Emerson, D.T. Matragrano, M.J. Whittingham, K.L. Butterfield, B.P. Shealy, J.R. Cornell Univ Ithaca United States

ISBN: (纸本)0780308948

The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber Organometallic Vapor Phase Epitaxy apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. high purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm2/V s, respectively. Excellent transport and optical properties were also observed for GaInP/GaAs and GaInAs/InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices.

关键词： semiconductor growth

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Self-consistent calculations of -oriented GaAs and InP based pseudomorphic HEMT's

Self-consistent calculations of -oriented GaAs and InP based...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Sanchez-Rojas, J.L. Munoz, E. Ciudad Universitaria Madrid Spain

ISBN: (纸本)0780308948

Band structure calculations, charge distribution and charge control properties in InGaAs-based pseudomorphic modulation doped [111]-FET's are presented. Compressive strain in AlGaAs/InGaAs/GaAs structures, and both tensile and compressive strains in AlInAs/InGaAs/InP devices are used to generate internal electric fields via the piezoelectric effect. Normal and inverted HEMT's with maximum charge in the well and minimized parallel conduction have been designed using this piezoelectric internal field. Improvements in charge concentration (up to 50% more) and its distribution in the well (almost centered) are achieved in this new orientation. Transconductance and gate capacitance versus gate voltage are compared for the [100] and [111] orientations. We conclude that the device performance is improved when the [111] substrate is used.

关键词： high electron mobility transistors

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Novel GaSb/AlSb/InAs high efficiency rectifying diode

Novel GaSb/AlSb/InAs high efficiency rectifying diode

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Ferro, Robert J. Robson, Ronald R. Hooper, William W. Hasenberg, Thomas C. Bailey, Leslie D. Newell, Scott M. Aerospace Corp Los Angeles United States

ISBN: (纸本)0780308948

We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm2 at less than 0.3 V of forward bias.

关键词： Tunnel diodes

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Resonant interband and intraband tunneling in InAs/AlSb/GaSb double barrier diodes

Resonant interband and intraband tunneling in InAs/AlSb/GaSb...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Huber, J.L. Reed, M.A. Kramer, G. Adams, M. Fernando, C.J.L. Frensley, W.R. Yale Univ New Haven United States

ISBN: (纸本)0780308948

We have realized a series InAs/AlSb/GaSb tunneling structures in which both interband and intraband tunneling occur, dependent on injection energy. The baseline structure consists of a single InAs well with GaSb barriers which serve as quantum wells for interband tunneling and barriers for intraband tunneling. At low biases, interband tunneling occurs through a coupled double well structure in the GaSb valence bands. At higher biases, intraband tunneling occurs through the InAs quantum well. The addition of a thin AlSb barrier at different points in the structure changes both the strength and number of peaks in the I-V/G-V characteristics.

关键词： semiconductor diodes

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LT-GaAs-MIS-diode characteristics and equivalent circuit model

LT-GaAs-MIS-diode characteristics and equivalent circuit mod...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Lipka, K.-M. Splingart, B. Erben, U. Kohn, E. Univ of Ulm Ulm Germany

ISBN: (纸本)0780308948

LT-GaAs MISFETs had been realized indicating a record 2.7 W/mm RF power handling capability. To optimize such LT-GaAs power MISFET structures, the MIS system containing a LT-GaAs insulator and an AlAs interfacial diffusion barrier to the channel has been analyzed. A noticeable parallel conductance was found in the insulator which is thought to be one of the key parameters to realize high gate to drain breakdown voltages. This conductivity however leads also to a gm-dispersion in the MHz range. Locus-curves of this system demonstrate a higher resistivity in the AlAs layer than in the LT-GaAs layer, indicating that the simple model of a single lossy capacitance does not describe the MIS diode completely. An extended electronic equivalent circuit for use in the FET model has been established.

关键词： MISFET devices

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Extraction of high-frequency equivalent network parameters of HBT's by low-frequency extrapolation of microwave s-parameter data

Extraction of high-frequency equivalent network parameters o...

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Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： John, Eugene Das, Mukunda B. Yang, Li-Wu Liu, S.M.J. Pennsylvania State Univ University Park United States

ISBN: (纸本)0780308948

This paper reports a comprehensive low-frequency extrapolation method for the purpose of separating the intrinsic and extrinsic or parasitic equivalent network parameters of high-frequency HBT's. The method involves measurements of device's small-signal parameters over a wide frequency range, and low-frequency extrapolation (LFE) of various transformed two-port parameters using a range of collector bias currents. For the extraction of the equivalent network parameters, the measured s-parameters are first converted into y- and h-parameters and they are used directly or in composite fashions in order to extract the parasitic series resistance elements (rbb′, and ree′), the shunt capacitance elements (cje, cbc and cc), and the intrinsic emitter-to-collector transit time after allowing for the parasitic time constant effects.

关键词： Bipolar transistors

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Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures

Effect of high field electron transport characteristics on t...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Zahurak, John Iliadis, Agis A. Rishton, Stephen A. Masselink, W.Ted IBM T.J. Watson Research Cent Yorktown Heights United States

ISBN: (纸本)0780308948

We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5×107 cm/s were measured for various delta-doped wells, while a peak velocity of 2.0×107 cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 μm gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had gm = 338 mS/mm. MODFETs with 0.5 μm gates yielded gm = 590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility.

关键词： Heterojunctions

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high speed monolithically integrated pin-MODFET transimpedance photoreceivers

High speed monolithically integrated pin-MODFET transimpedan...

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Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Gutierrez-Aitken, A.L. Bhattacharya, P. Chen, Y.C. Pavlidis, D. Brock, T. Univ of Michigan Ann Arbor United States

ISBN: (纸本)0780308948

The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In0.53Ga0.47As p-i-n photodiode integrated with a 0.1 μm gate length regrown pseudomorphic In0.60Ga0.40As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at λ = 1.55 μm. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dBΩ with a 800 Ω feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dBΩ with a 1.2 KΩ feedback resistor.

关键词： Photodetectors

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high temperature operation of n-type 6H-SiC and p-type diamond MESFETs

High temperature operation of n-type 6H-SiC and p-type diamo...

引用

Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Shin, M.W. Bilbro, G.L. Trew, R.J. North Carolina State Univ Raleigh United States

ISBN: (纸本)0780308948

Large signal RF and DC performance of n-type 6H-SiC and p-type diamond MESFETs has been simulated at various operating temperatures by a large-signal RF simulator using the harmonic balance technique and the two-dimensional device simulator, PISCES-IIB. The RF performance of SiC MESFET is predicted to be optimal in a temperature range slightly higher than room temperature. At room temperature the simulated SiC MESFET exhibits an output power of 3.5 W/mm for an operating frequency of 8 GHz with 16.5 dB gain and 44% power-added efficiency at 24 dBm input power. In contrast to the SiC MESFET, the RF performance of the diamond MESFET is improved with temperature, but the current level is much lower than that in SiC in the entire temperature region investigated. The very different temperature dependencies of DC and RF performance in SiC and diamond MESFETs are attributed to the significant difference in the dopant ionization energies in SiC and diamond.

关键词： MESFET devices

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Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz

Structure and simulation of GaAs TUNNETT and MITATT devices ...

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Proceedings of the ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chen, Chien-Chung Mains, Richard K. Haddad, George I. Eisele, Heribert Univ of Michigan Ann Arbor United States

ISBN: (纸本)0780308948

A numerical simulation program for two-terminal transit-time devices based on the energy-momentum transport model, with valence band to conduction band tunneling phenomena incorporated, has been developed. This program can deliver accurate TUNNETT and MITATT device simulation results in the millimeter and submillimeter range, and therefore provides a useful tool for high frequency device structure design and optimization. Simulation results for GaAs TUNNETT and MITATT devices for frequencies above 100 GHz will be presented. As simulation results show, the negative resistance of the device decreases rapidly as the operating frequency increases. Under such circumstances, the contact resistance severely degrades the device's RF performance. When a diode's negative resistance becomes lower than the contact resistance, no RF power can be generated. To overcome this difficulty, device structures using no ohmic contacts are investigated. In these devices, Ohmic contacts are replaced by Schottky contacts, and also p-n junctions are replaced by Schottky junctions for single-drift structures. Since the metal-semiconductor contact resistance is eliminated or greatly reduced in such devices, they are very promising as RF power sources at extremely high frequencies.

关键词： Transit time devices

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