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531 篇 会议
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Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

Model-based comparison of RF noise in oscillating diamond an...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： G.L. Bilbro M.W. Shin R.J. Trew A.N. Riddle North Carolina State University Raleigh NC USA Macallan Consulting Milpitas CA USA

We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

关键词： Radio frequency Silicon carbide MESFETs Circuit noise semiconductor device noise Microwave oscillators Circuit simulation Predictive models RLC circuits Microwave circuits

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A coupled mode theory for electron wave directional couplers

A coupled mode theory for electron wave directional couplers

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A.M. Sarangan Wei-Ping Huang Department of Electrical and Computer Engineering University of Waterloo Waterloo Canada

In this paper, a coupled mode theory for electron wave directional couplers is presented. The theory includes the dephasing effect on electrons due to temporally random phase destroying collisions. Using this scheme, ... 详细信息

关键词： Electrons Directional couplers Wires Interference semiconductor materials Optical switches Partial differential equations Matrices Fabrication Lithography

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high field drift domains in GaAs and InP based heterostructure field effect devices

High field drift domains in GaAs and InP based heterostructu...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： E. Kohn S. Strahle D. Geiger U. Erben Department of Electron Devices and Circuits University of Ulm (EBS) Ulm Germany

Modelling the high field drift region of HFET's as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures.< >

关键词： Gallium arsenide Indium phosphide Capacitors Capacitance circuits HEMTs MODFETs Electrons

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high speed optical detectors for monolithic millimeter wave integrated circuits

High speed optical detectors for monolithic millimeter wave ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： K. Litvin J. Burm D. Woodard W. Schaff L.F. Eastman School of Electrical Engineering Cornell University Ithaca NY USA Cornell University Ithaca NY US Sch. of Electr. Eng. Cornell Univ. Ithaca NY USA

Metal-semiconductor-metal photodiodes with interdigitated Schottky barrier fingers are being developed for applications in monolithic optical receiver circuits with the purpose of detecting millimeter wave modulation signals being transmitted via an optical carrier. The devices are planar and incorporate submicron finger spacings and a thin absorption region for speed with a buried stack of tuned Bragg reflectors for enhanced sensitivity at the carrier wavelength. These devices are being integrated with short-gate MODFET amplifiers to form the complete monolithic integrated optical receiver circuit.< >

关键词： Optical detectors Optical receivers Fingers MODFET circuits Millimeter wave circuits Photodiodes Schottky barriers MIMICs high speed optical techniques Stimulated emission

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MSM waveguide photodetectors optimized for monolithic integration with HEMTs

MSM waveguide photodetectors optimized for monolithic integr...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M.H. Leary J.M. Ballantyne School of Electrical Engineering Phillips Hall Cornell University Ithaca NY USA

The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC's. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors.< >

关键词： Photodetectors Monolithic integrated circuits HEMTs MODFETs Optical waveguides Detectors Gallium arsenide Electrodes Indium gallium arsenide Optical buffering

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A new resonant tunneling transistor fabricated by cleaved edge overgrowth

A new resonant tunneling transistor fabricated by cleaved ed...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： C. Kurdak D.C. Tsui S. Parihar H. Manoharan S.A. Lyon M. Shayegan Department of Electrical Engineering Princeton University Princeton NJ USA

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.< >

关键词： Resonant tunneling devices Gallium arsenide Molecular beam epitaxial growth Transconductance Voltage Electrons Ultra large scale integration CMOS technology Fabrication Substrates

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high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator

High frequency performance of GaAs/AlGaAs multiple quantum w...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M. Nawaz B.T. Olsen K. McIlvaney UNIK Centre for Technology Kjeller Norway Norwegian Telecom Research Kjeller Norway

We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was /spl sim/600... 详细信息

关键词： Frequency Gallium arsenide Quantum well devices Voltage Reflectivity Optical reflection Optical modulation Dielectric substrates Mirrors semiconductor device doping

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An improved gate breakdown model for studying high efficiency MESFET operation

An improved gate breakdown model for studying high efficienc...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： T.A. Winslow A.S. Morris R.J. Trew High Frequency Electronics Laboratory Depment of Electrical and Computer Engineering North Carolina State University Raleigh NC USA

A gate breakdown model for MESFETs is presented. The model is based on quantum tunneling initiated avalanche ionization. The breakdown model is incorporated into a physics based MESFET model. Forward and reverse gate ... 详细信息

关键词： Electric breakdown MESFETs Tunneling Avalanche breakdown Thermionic emission Ionization Power amplifiers Breakdown voltage Electron emission Phased arrays

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Luminescence from Si-based materials and devices

Luminescence from Si-based materials and devices

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J.C. Campbell K.-H. Li C. Tsai Microelectronics Research Center University of Technology Austin TX USA

While numerous luminescence effects have been reported for Si-based materials, with few exceptions the efficiencies have been extremely low. The observation of strong, room-temperature, visible emission from porous Si has renewed interest in and stimulated research on light emission from column IV materials. This paper reviews some of the accomplishments that may presage the development of Si-based light emitters.< >

关键词： Luminescence Nanostructures Temperature Crystalline materials Crystallization Photoluminescence Electroluminescence Impurities Optical materials Radiative recombination

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A proposed Stark shift electrooptic device operating in visible wavelengths

A proposed Stark shift electrooptic device operating in visi...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： A.A. Chowdhury M.M. Rashed C.M. Maziar Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas Austin Austin TX USA

We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.< >

关键词： Electrooptic devices Charge carrier processes Quantum well devices Optical superlattices Lattices Capacitance-voltage characteristics Microelectronics Electron optics Electromagnetic wave absorption Potential well

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