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Silicon germanium heterobipolar transistor for high speed operation

Silicon germanium heterobipolar transistor for high speed op...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： E. Kasper A. Gruhle Research Center Ulm Daimler Benz Aerospace Ulm Germany

The high frequency dilemma (limited high frequency operation only possible with high base sheet resistivities) of silicon bipolar junction transistors can be overcome by the application of heterostructures. In a first part we give an overview about the SiGe base heterobipolar-transistor (SiGe-HBT) concept and about the devices realized so far. In the second part we report about our SiGe-HBT device work based on Si-MBE grown structures. Experimental results obtained include transit frequencies up to 100 GHz, maximum oscillation frequencies up to 65 GHz, low base sheet resistivities (0.7 k/spl Omega/spl square/ to 3 k/spl Omega/spl square/), encouraging noise properties (<2 dB at 10 GHz) and successful tests in 24 GHz oscillators.< >

关键词： Silicon germanium Germanium silicon alloys Conductivity Niobium Frequency Tunneling Fluctuations Doping profiles Voltage Testing

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Novel metal/2-DEG junction transistors

Novel metal/2-DEG junction transistors

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： W.C.B. Peatman H. Park B. Gelmont M. Shur P. Maki E.R. Brown M.J. Rooks Department of Electrical Engineering University of Virginia Charlottesville VA USA MIT Lincoln Laboratories Lexington MA USA National Nanofabrication Facility Cornell University Ithaca NY USA

We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.< >

关键词： Electrons Schottky barriers Millimeter wave integrated circuits Millimeter wave transistors Power integrated circuits Etching Resonant tunneling devices Transconductance Temperature FETs

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A novel GaSb/AlSb/InAs high efficiency rectifying diode

A novel GaSb/AlSb/InAs high efficiency rectifying diode

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： R.J. Ferro R.R. Robson W.W. Hooper T.C. Hasenberg L.D. Bailey S.M. Newell Aerospace Corporation Los Angeles CA USA Hughes Research Laboratories Inc. Malibu CA USA

We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.< >

关键词： Schottky diodes Charge carrier processes Photonic band gap Resonance Resonant tunneling devices Superlattices Voltage Radiative recombination Spontaneous emission Postal services

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InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

InP-based HEMTs for the realization of ultra-high efficiency...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M. Matloubian L. Larson A. Brown L. Jelloian L. Nguyen M. Lui T. Liu J. Brown M. Thompson W. Lam A. Kurdoghlian R. Rhodes M. Delaney J. Pence Hughes Research Laboratories Malibu CA Gallium Arsenide Operations Hughes Aircraft Company Torrance CA Space and Communications Sector Hughes Aircraft Company El Segundo CA

The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication.< >

关键词： HEMTs MODFETs Power amplifiers high power amplifiers Frequency PHEMTs Breakdown voltage Indium phosphide Low-noise amplifiers Aircraft

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Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors

Junction barrier effects on the microwave power performance ...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： B.R.A. Sugeng C.J. Wei J.C.M. Hwang J.I. Song W.P. Hong J.R. Hayes Lehigh University Bethlehem PA USA Bellcore Red Bank NJ USA

The barrier effects in InP based double heterojunction bipolar transistors have been investigated both theoretically and experimentally. It was found that the gradual saturation of collector current with increasing collector voltage was caused by the collector-base heterojunction barrier. The gain compression with increasing base current was caused by electron accumulation at the collector-base heterojunction. These effects have been included in terms of nonlinear currents and capacitances in an equivalent circuit model for the prediction of DHBT large signal performance. By using an InAlAs emitter and an InP collector with an InGaAs spacer to alleviate these undesirable effects, improvement in microwave power performance was verified.< >

关键词： Indium phosphide Double heterojunction bipolar transistors Voltage Electrons Capacitance Equivalent circuits Predictive models DH-HEMTs Indium compounds Indium gallium arsenide

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New analytic determination of f/sub T/, f/sub MAX/ and the frequency dependence of current gain and power gain in HBTs

New analytic determination of f/sub T/, f/sub MAX/ and the f...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： D.R. Pehlke D. Pavlidis Solid-state Electronics Laboratory University of Michigan Ann Arbor MI USA

A new analytic formalism describing the frequency dependence of current gain and power gain of HBTs based on the T-Model equivalent circuit is presented. It is found that while extrapolation serves as a conservative benchmark for HBT high-speed device comparison, it often significantly underestimates the actual intercept frequency for f/sub T/, with an experimental example presented here with error of 50%. The frequency dependence of G/sub MAX/ shows it to be unsuitable for extrapolation to find f/sub MAX/, while extrapolation of Unilateral Gain (U) will generally in the absence of resonances yield accurate values for f/sub MAX/. The conditions for resonance and resonance frequencies for U are analytically investigated here, and new analytic expressions are developed and experimentally demonstrated for highly accurate determination of the f/sub T/ and f/sub MAX/ intercept frequencies of HBTs.< >

关键词： Frequency dependence Extrapolation Heterojunction bipolar transistors Equivalent circuits Resonance Frequency measurement Gain measurement Current measurement Gallium arsenide Coupling circuits

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Millimeter-wave network analysis using nonlinear transmission lines

Millimeter-wave network analysis using nonlinear transmissio...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M.J.W. Rodwell R. Yu M. Reddy J. Pusl S. Allen M. Case U. Bhattacharya Department of Electrical and Computer Engineering University of California Santa Barbara CA USA Spacc and Communications Group Hughes Aircraft Company Los Angeles CA USA Hughes Research Laboratories Inc. Malibu CA USA

We report systems for network measurements at millimeter-wave frequencies. Active probes are used for on-wafer measurements to approximately 150 GHz. The active probes incorporate monolithic GaAs mm-wave network analysis circuits (comprising a nonlinear transmission line stimulus signal generator and a directional sampling circuit) and low-loss, rugged quartz coplanar-waveguide probe tips. Wideband transmitter and receiver integrated circuits interfaced to frequency-independent antennas, are used for free-space transmission measurements to approximately 250 GHz.< >

关键词： Transmission lines Millimeter wave measurements Transmission line measurements Integrated circuit measurements Probes Coplanar transmission lines Distributed parameter circuits Frequency measurement Antenna measurements Broadband antennas

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Flow modulation growth of III-V compound semiconductors using a multichamber OMVPE reactor

Flow modulation growth of III-V compound semiconductors usin...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： B.L. Pitts D.T. Emerson M.J. Matragrano K.L. Whittingham B.P. Butterfield J.R. Shealy OMVPE Facility School of Electrical Engineering Cornell University Ithaca NY USA OMVPE Facility Department of Material Science and Engineering Cornell University Ithaca NY USA

The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber organometallic vapor phase epitaxy (OMVPE) apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. high purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm/sup 2V s, respectively. Excellent transport and optical properties were also observed for GaInP-GaAs and GaInAs-InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices.< >

关键词： III-V semiconductor materials Indium phosphide Gallium arsenide Valves Phase modulation Epitaxial growth Substrates Superlattices Temperature high speed optical techniques

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Resonant interband and intraband tunneling in InAs/AlSb/GaSb double barrier diodes

Resonant interband and intraband tunneling in InAs/AlSb/GaSb...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J.L. Huber M.A. Reed G. Kramer M. Adams C.J.L. Fernando W.R. Frensley Department of Electrical Engineering Yale University New Heaven CT USA Phoenix Corporate Research Laboratories Motorola Inc. Tempe AZ USA University of Texas Dallas Richardson TX USA

We have realized a series InAs/AlSb/GaSb tunneling structures in which both interband and intraband tunneling occur, dependent on injection energy. The baseline structure consists of a single InAs well with GaSb barriers which serve as quantum wells for interband tunneling and barriers for intraband tunneling. At low biases, interband tunneling occurs through a coupled double well structure in the GaSb valence bands. At higher biases, intraband tunneling occurs through the InAs quantum well. The addition of a thin AlSb barrier at different points in the structure changes both the strength and number of peaks in the I-V/G-V characteristics.< >

关键词： Resonance semiconductor diodes Fabrication Superlattices Laboratories Resonant tunneling devices Charge carrier processes Delay Oscillators Conducting materials

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A hybrid quantum-classical model for transport in tunneling heterostructures

A hybrid quantum-classical model for transport in tunneling ...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： C.L. Fernando W.R. Frensley Erik Jonsson School of Engineering and Computer Science University of Texas Dallas Richardson TX USA

Several models have been developed to evaluate the current-voltage characteristics of the resonant tunneling diode (RTD). The current density predicted by both flat-band model and Thomas-Fermi approximation (or zero-current model) fails to reproduce the experimental results. We believe that this disagreement is due to the assumption of perfect electron coherence in the tunneling theory. An adjusted Thomas-Fermi model which includes a series resistance at either of the contact layers has been tried out, but the result is still unsatisfactory. A hybrid quantum-classical approach is suggested to evaluate self-consistently the electron current. The method couples the quantum-tunneling current obtained by solving the Schrodinger equation in the tunneling region with the classical drift-diffusion current in the contact layers. The resulting current continuity equation is solved self-consistently with Poisson's equation. It shows that the hybrid quantum-classical model gives much more realistic I(V) curves than other models.< >

关键词： Predictive models Electrons Poisson equations Current-voltage characteristics Resonant tunneling devices Diodes Current density Coherence Contact resistance Schrodinger equation

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