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Planar cold cathodes

Planar cold cathodes

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： U.K. Mishra Wei-Nan Jiang Department of Electrical and Computer Engineering University of California Santa Barbara CA USA

There is a great need for electron sources for a variety of applications, such as klystrons, traveling wave tubes (TWTs), planar panel displays, vacuum triodes, etc.. The cold cathode electron emitters under investigation currently can be basically divided into two types: field emitters and planar emitters. Field emitters are based on the field emission mechanism which was first presented by Fowler and Nordheim in 1928. In planar emitters, electrons are accelerated inside solid state materials by internal electric field. Those electrons which reach the surface with enough kinetic energy to overcome the surface work function could be emitted into vacuum. A lot of work has been done in this area and many planar emitters based on different hot electron generation mechanisms have been described in the past 30 years. To obtain considerable emission efficiency and current density, the solid state surface is usually coated with low work function material (on the order of one mono-layer), such as cesium and cesium oxide. This paper reviews the developments of planar cold cathodes and discusses the characteristics of AlGaAs/GaAs planar doped-barrier electron emitters (PDBEEs) based on the study of their temperature dependent current-voltage (I-V) characteristics.< >

关键词： Cathodes Electron emission Electron guns Solid state circuits Electron sources Klystrons Electron tubes Flat panel displays Acceleration Kinetic energy

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InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy

InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors g...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： W.L. Chen G.O. Munns D. Knightly J.R. East G.I. Haddad Solid-state Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

Resonant tunneling bipolar transistors (RTBT's) have been systematically studied using chemical beam epitaxy (CBE) for the first time. The RTBT structure studied is a InP-based transistor, consisting of single or multiple AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs RTD's in the emitter layer of a conventional heterojunction bipolar transistor (HBT) and an InGaAs or InGaAsP collector layer. Using the InGaAsP collector layer, the RTBT showed an improvement of breakdown voltage from 4 V to 10 V. The averaged DC /spl beta/'s are around 10 and 20 at 300 K and 77 K, respectively. In the transfer I-V characteristics, the RTBT showed 1 to 4 negative differential transconductance (NDT) peaks with peak-to-valley current ratios of 1.5 to 5.28 at 300 K. Using such NDT peaks, several RTBT digital functions were demonstrated at room temperature, including a frequency multiplier and exclusive NOR gate.< >

关键词： Indium gallium arsenide Resonant tunneling devices Bipolar transistors Heterojunction bipolar transistors Chemicals Molecular beam epitaxial growth Epitaxial growth Transconductance Temperature Frequency

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Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures

Effect of high field electron transport characteristics on t...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J. Zahurak A.A. Iliadis S.A. Rishton W.T. Masselink IBM Research Division IBM Thomas J. Watson Research Center Yorktown Heights NY USA Department of Electrical Engineering University of Maryland College Park MD USA

We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5/spl times/10/sup 7/ cm/s were measured for various delta-doped wells, while a peak velocity of 2.0/spl times/10/sup 7/ cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 /spl mu/m gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had g/sub m/=338 mS/mm. MODFETs with 0.5 /spl mu/m gates yielded g/sub m/=590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility.< >

关键词： Indium gallium arsenide Indium compounds Epitaxial layers Electron mobility Doping profiles FETs Velocity measurement MODFETs HEMTs Conducting materials

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On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures

On the suppression of phonon-electron scattering in short pe...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： T.T. LeTran W.J. Schaff B.K. Ridley Y.P. Chen A. Clark S. O'Keefe L.F. Eastman School of Electrical Engineering Cornell University Ithaca NY USA Department of Physics University of Essex Colchester UK

The suppression of longitudinal optical phonon (LOP)-electron scattering was sought in multiple quantum well (MQW) structures. The structures had GaAs well widths=12, 15 and 20 mono layers (ML) and AlAs barrier widths =2 and 4 ML. The MQWs were grown in the channel of GaAs/Al/sub 0.3/Ga/sub 0.7/As modulation doped field effect transistors (MODFETs) without gates. The Hall mobility and carrier sheet density were measured by the van der Pauw method. The Hall mobility of the MQW samples was found to be less than that of the control samples (without MQW) at room temperature, but was better at temperatures lower than 50 K. The reduction of the room temperature mobility was due to interaction of the well electrons with the interface polaritons from the AlAs barriers. The increase of the low temperature mobility was due to reduced remote ionized impurity scattering of the well electrons. The evidence of performance improvement of MQW devices at room temperature due to suppression of electron-LOP scattering is thus disputed by this study. The results of an experiment made elsewhere, which appeared to show the contrary, can be interpreted using arguments other than the suppression of electron-LOP scattering in MQWs.< >

关键词： Optical scattering Quantum well devices Particle scattering Gallium arsenide Hall effect Electron mobility Temperature Phonons MONOS devices Epitaxial layers

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Microcavity optoelectronic devices

Microcavity optoelectronic devices

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： L.A. Coldren D.B. Young M.G. Peters F.H. Peters J.W. Scott C.C. Barron B.J. Thibeault S.W. Corzine Department of Electrical and Computer Engineering University of California Santa Barbara CA USA

Over the past few years vertical-cavity surface-emitting lasers and modulators have emerged as viable devices with interesting performance characteristics. One of their key features is that they occupy very little substrate area as compared to most optoelectronic devices. As a result, they also require relatively low drive powers. These aspects together with their suitability for wafer-scale fabrication and testing make them appear suitable for low-cost production as well as high performance. In this paper we shall review recent progress on these devices with emphasis on the vertical-cavity laser. Vertical-cavity lasers with cw powers exceeding 110 mW, overall efficiencies exceeding 17%, operating temperatures exceeding 120/spl deg/C, and output powers insensitive to temperature over ranges exceeding 60/spl deg/C will be illustrated. In addition, devices have operated cw down to diameters of 2 /spl mu/m, including a 6 /spl mu/m device that delivers nearly 2 milliwatts of single-mode output power with greater than 30 dB of spurious mode suppression. In the vertical-cavity modulator area, reflective asymmetric Fabry-Perot structures have given up to 37 GHz of modulation bandwidth. Insertion losses are about 3 dB, and required voltage swings for 100:1 modulation are /spl simspl plusmn/2V.< >

关键词： Microcavities Optoelectronic devices Vertical cavity surface emitting lasers Surface emitting lasers Temperature distribution Power generation Optical device fabrication Testing Production Power lasers

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Development of an appropriate model for the design of D-band InP Gunn devices

Development of an appropriate model for the design of D-band...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： R. Kamoua H. Eisele G.I. Haddad G. Munns M. Sherwin Department of Electrical Engineering State University of New York Stony Brook Stony Brook NY USA Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Sandia National Laboratory Albuquerque NM USA

The potential of InP Gunn devices as power sources in the fundamental mode at D-band frequencies (110 GHz-170 GHz) is investigated. A self-consistent ensemble Monte Carte model has been developed to design and identify suitable structures for operation in this frequency range. Using this model with typical InP material parameters found in the literature, it is shown to give results inconsistent with experiment. Based on experimental results from a 1.7 /spl mu/m long Gunn structure, more realistic material parameters were estimated. The resulting model is then used to design various structures with active regions in the 1 /spl mu/m range. In particular, two structures, one with a flat doping profile and the other with a linearly graded doping profile, were fabricated and tested. State-of-the-art performance from these structures operating in the fundamental mode was obtained at frequencies ranging from 108.3 GHz to 155 GHz. The flat structure yielded optimum results at 108.3 GHz with a power level of 33 mW while the graded structure gave 20 mW at 120 GHz, 17 mW at 133 GHz, 10 mW at 136 GHz, and 8 mW at 155 GHz. These results are compared with the model predictions.< >

关键词： Indium phosphide Gunn devices Frequency Predictive models Monte Carlo methods Power generation Atmospheric modeling Admittance Voltage Solid state circuits

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high microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

High microwave power performance of self-aligned InGaP/GaAs ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： L.W. Yang S.T. Fu B.F. Clark R.S. Brozovich H.H. Lin S.M.J. Liu P.C. Chao F. Ren C.R. Abernathy S.J. Pearton J.R. Lothian P.W. Wisk T.R. Fullowan T.Y. Chiu S.S. Pei Electronics Laboratory Martin Marietta (Formerly General Electric Aerospace) Syracuse NY USA AT and T Bell Laboratories Inc. Murray Hill NJ USA

The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (<150 mV) and low knee voltage (<0.7 V), and excellent high-frequency responses well into the millimeter-wave range. The FET-like device topology provides a means to preserve the power gain in device scaling for large emitter area. At X-band (10 GHz), an 8-cell common-base (CB) power transistor with emitter area of 240 /spl mu/m/sup 2/ demonstrated 17.2-17.5 dB gain. The 12-cell (360 /spl mu/m/sup 2/) common-emitter (CE) HBTs with a breakdown voltage (BV/sub ceo/) of 11 V delivered 0.53 W output power with 57% power added efficiency (P.A.E.) and 11.3 dB power gain at 4 GHz. Peak power of 0.68 W, P.A.E. of 52%, and 10.3 dB power gain also was achieved at a collector current density of 5.5/spl times/10/sup 4/ A/cm/sup 2/.< >

关键词： Gallium arsenide Gain Low voltage Microwave devices Heterojunction bipolar transistors Knee Millimeter wave technology Millimeter wave transistors Topology Power transistors

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Uncertainty and sensitivity analysis in high speed device modeling

Uncertainty and sensitivity analysis in high speed device mo...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Vai, Man-Kuan Chen, Ying Prasad, Sheila Meskoob, Bahman Bulutay, Ceyhun

ISBN: (纸本)0780304918

The simulated annealing (SA) algorithm is extended to extract uncertainty and sensitivity information from the equivalent circuit modeling process. This information is obtained from the probabilistic space exploration process applied in SA. The results obtained from modeling a novel collector-up heterojunction bipolar transistor (HBT) are presented.

关键词： Transistors, Bipolar

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Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach

Simulation of small semiconductor devices using a coupled Mo...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Laux, Steven E. Fischetti, V.

ISBN: (纸本)0780304918

A numerical model for electronic transport in semiconductor devices is summarized and a recently published model-based comparison of idealized submicron MOSFETs which are nominally the same except for differing substrate material is reviewed. Five substrate materials--Ge, Si, GaAs, InP, and In0.53Ga0.47As--are considered, and the logic switching performance of the devices is compared. These simulations were performed with the program DAMOCLES (device analysis and Monte Carlo et Poisson solver), implementing a solid physical basis within a flexible device modeling framework. In addition, an analysis utilizing a GaAs SISFET is performed.

关键词： semiconductor devices

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Hot electrons cathodes in high speed three-terminal devices: Do they really make a difference?

Hot electrons cathodes in high speed three-terminal devices:...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Weinzierl, S.R. Krusius, J.P.

ISBN: (纸本)0780304918

Using a two-dimensional self-consistent ensemble Monte Carlo method, the effectiveness of the abrupt heterojunction, planar doped barrier, and doped homojunction as hot electron cathodes in realistic high speed semiconductor device structures is investigated. Both unipolar (vertical FET) and bipolar (heterojunction bipolar transistor) structures are examined, and results of device parameter optimization are given. Steady-state and transient device characteristics are compared, and low temperature (77 K) results are given. It is found that, when properly designed, hot electron cathodes can significantly improve device performance, especially at low temperatures. This potential has not always been realized in fabricated devices because of the complexity of the design.

关键词： Transistors, Bipolar

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