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Band-coupling effect on the frequency limit of resonant-tunneling diodes

Band-coupling effect on the frequency limit of resonant-tunn...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Yang, Rui Q. Xu, J.M.

ISBN: (纸本)0780304918

The effect of the band-coupling between the conduction and valence bands on the frequency limit of resonant tunneling oscillators is studied. An analytical two-band sequential tunneling model based on the dot vector product of k and p is presented. For a conventional double-barrier resonant tunneling diode, the results are compared with that of the one-band sequential tunneling model. It is shown that, by taking into account the band-coupling effect, the frequency limit could be many times greater than that predicted by the one-band model.

关键词： semiconductor Diodes, Tunnel

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A 2.3 ps time-domain reflectometer for millimeter-wave network analysis

A 2.3 ps time-domain reflectometer for millimeter-wave netwo...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Yu, Ruai Y. Kamegawa, Masayuki Case, Michael Rodwell, Mark Franklin, Jeff

ISBN: (纸本)0780304918

A GaAs monolithic time-domain reflectometer (TDR) for millimeter-wave network analysis has been fabricated. The nonlinear transmission line (NLTL)-based TDR has two outputs from which the incident and reverse waves can be determined. The two channels show a 2.3-ps falltime, and hence a 150-GHz 3-dB TDR bandwidth. The reflection coefficient in the time domain obtained after a partial calibration clearly indicates a prominent reflection when the TDR is under open-circuitry load. With the use of network analysis calibration routines, corrected millimeter-wave vector measurements will be feasible with these devices.

关键词： Integrated circuits, Monolithic

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Inclusion of the inertial effects in the drift-diffusion equation

Inclusion of the inertial effects in the drift-diffusion equ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Belde, Ramprasad Frensley, William R.

ISBN: (纸本)0780304918

The authors point out that when the potential across the transit region of a device varies by kT/2|q| volts or more within a mean free path length the charge carrier inertia significantly influences the current transport. The conventional drift-diffusion model is corrected to include such inertial effects and obtain a unified transport model. Device modeling has been done using the modified transport model and used in the case of a n+nn+ structure to demonstrate the importance of the inertial or the ballistic effects on the carrier motion for very narrow potential barriers. The results show that the uniform transport model gives improved results compared to the drift-diffusion model.

关键词： semiconductor devices

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A Monte Carlo simulation of electron transit times in dissipative quantum devices

A Monte Carlo simulation of electron transit times in dissip...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Khondker, A.N. Alam, Muhammad A.

ISBN: (纸本)0780304918

A Monte Carlo simulation procedure for the estimation of the transit times of electrons that tunnel across elastic barriers is presented. The procedure, based on a quantum kinetic approach, includes the effects of interference due to elastic barriers and incorporates electron-phonon phase-breaking processes. The phase-breaking processes remove the interference effects due to barriers and are responsible for dissipation in quantum transport. The transit time of electrons in quantum devices will, therefore, be drastically affected due to the presence of the two above-mentioned effects. The results of the simulation for the single- and double-barrier structures are reported. Also, as an example, an application of the transit time that shows how dissipation may influence the noise properties of the double-barrier structures is presented.

关键词： semiconductor devices

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high speed modulation of InP-based strained quantum well lasers

High speed modulation of InP-based strained quantum well las...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Nichols, D. Sun, H.C. Pamulapati, J. Loehr, J. Sherwin, M. Munns, G. Singh, J. Bhattacharya, P. Ludowise, M.J.

ISBN: (纸本)0780304918

An investigation of the properties of discrete and integrated InP-based strained InxGa1-xAs/InP (0.33 &le x &le 0.73) quantum-well lasers both theoretically and experimentally, taking into account the effects of Auger recombination, is discussed. The variation of threshold current, differential quantum efficiency, and small- and large-signal modulation properties of broad-area and ridge lasers have been determined. In determining the modulation behavior, the extrinsic time constant limitations of compressive- and tensile-strained lasers have also been characterized. The modulation properties of quantum well electroabsorption modulators integrated monolithically with the lasers have also been characterized.

关键词： Lasers, semiconductor

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high performance W-band low noise and power pseudomorphic InGaAs HEMTs

High performance W-band low noise and power pseudomorphic In...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Tan, Kin L. Streit, Dwight C. Liu, Po-Hsin Chow, P.Daniel

ISBN: (纸本)0780304918

The authors have successfully developed a 0.1 μm T-gate planar doped pseudomorphic InGaAs high-electron-mobility transistor (HEMT) process for the fabrication of low noise and power devices with record W-band performance. The low noise device has a noise figure of 2.3 dB with an associated gain of 7.5 dB at 92 GHz. When optimized for power using a planar doped channel, the device exhibited an output power of 62.7 mW with 4.0 dB gain and 13.2% power added efficiency at 94 GHz. When tuned for minimum noise, the power device achieved a noise figure of 3.0 dB with 7.4 dB associated gain at 94 GHz.

关键词： Transistors, Field Effect

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high frequency large signal characterization of heterojunction bipolar transistors

High frequency large signal characterization of heterojuncti...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Teeter, Douglas A. East, Jack R. Haddad, George I.

ISBN: (纸本)0780304918

A Ka-band active load pull measurement system is described. Its use for measuring the dependence of output power and gain on bias, input power, and frequency of heterojunction bipolar transistors (HBTs) from 26.5 to 40 GHz is reported. To help explain the experimental results a detailed numerical simulation has been used to develop a simple HBT device model. This simplified model includes transit time effects and is easily implemented in commercially available harmonic balance software such as Libra. Measured and simulated results are compared. Both sets of results indicate that the primary source of gain compression is caused by the device entering the ohmic region. Device mismatch is an additional compression mechanism for fixed load impedances at high drive levels.

关键词： Transistors, Bipolar

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Monolithic coaxial transmission lines for mm-wave ICs

Monolithic coaxial transmission lines for mm-wave ICs

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Bishop, Jennifer A. Hashemi, Majid M. Kiziloglu, Kursad Larson, Lawrence Dagli, Nadir Mishra, Umesh

ISBN: (纸本)0780304918

A transmission line with potential application to terahertz ICs has been fabricated and characterized. The transmission line is a coaxial (shielded) line which is integrable and compatible with existing monolithic microwave integrated circuit (MMIC) technology. The structure is composed of a center conductor surrounded by a homogeneous dielectric (probimide), covered entirely by a gold plated ground plane. The coaxial lines are terminated to coplanar waveguide pads for on-wafer microwave measurements. The loss and other lumped transmission line parameters were extracted from the measured S-parameter data. The simulation results based on initial experimental data suggest the usefulness of coaxial line in the frequency range above 200 GHz. The shielded coaxial lines have the following characteristics: no radiation losses, no crosstalk between adjacent lines which enables denser IC design, compatible with existing MMIC technology, and easy transition to microstrip and coplanar waveguides.

关键词： Integrated circuits, Monolithic

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high gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-band applications

High gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-ban...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Streit, Dwight C. Tan, Kin L. Liu, Po-Hsin Chow, P.Daniel

ISBN: (纸本)0780304918

The fabrication of lattice-matched InGaAs-InAlAs-InP high-electron-mobility transistors (HEMTs) with excellent W-band performance is reported. At 93 GHz a device minimum noise figure of 1.7 dB with 7.7 dB associated gain was measured for 0.15-μm T-gate HEMTs. A maximum cutoff frequency of 200 GHz was obtained, and the 12.2-dB small-signal gain measured at 94 GHz extrapolates to a maximum frequency of oscillation of 380 GHz. A two-stage MIC amplifier demonstrated a minimum noise figure of 3.0 dB and 16.0 dB associated gain at 93.4 GHz using these devices. A single-ended active mixer was also fabricated using lattice-matched 0.15-μm HEMTs, and a conversion gain of 2.4 dB with 7.3 dB single-sideband noise figure at 94 GHz was measured.

关键词： Transistors, Field Effect

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high performance HBT's with built-in base fields: Exponentially-graded doping vs. graded composition

High performance HBT's with built-in base fields: Exponentia...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Streit, Dwight C. Oki, Aaron K. Umemoto, Donald K. Tran, Liem T. Kobayashi, Kevin W.

ISBN: (纸本)0780304918

A comparison of exponentially graded doping and graded composition as a means of producing built-in drift fields in the base of npn GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is discussed. The reduction in base transit time (τB) associated with the built-in fields is substantial. Compared to uniformly doped devices with the same base width, τB is reduced by approximately 70% for both the graded doping and graded composition profiles. The field associated with exponentially graded base doping is derived, accounting both for bandgap narrowing effects and for degeneracy. It is found that the built-in field due to doping gradients is substantially larger than that expected when computed using only nondegenerate Boltzmann statistics. The increase in device performance when exponentially graded doping is used is demonstrated using a distributed HBT amplifier with 24-GHz bandwidth.

关键词： Transistors, Bipolar

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