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检索条件"任意字段=IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits"

共 532 条记录，以下是21-30 订阅

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high speed diamond DUV-detector

High speed diamond DUV-detector

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Gluche, P Kohn, O Binder, M Adamschik, M Ebert, W Vescan, A Rohrer, E Nebel, CE Kohn, E Univ Ulm Dept Electron Devices & Circuits D-89069 Ulm Germany

ISBN: (纸本)0780339703

Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated and characterized. Efficiency, speed and blindness to visible light have been investigated. A charge collection efficiency of approx. 100% at high electric field strength and an ultra fast response (FWHM <4ns) could be demonstrated.

关键词： swine erysipelas electric field strength X-ray detectors gallium nitrate collection efficiency Blindness Band gap Visible Light high speed

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high frequency SiGe heterostructure devices

High frequency SiGe heterostructure devices

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Konig, U Gruhle, A Daimler Benz AG Res Ctr Ulm D-89081 Ulm Germany

ISBN: (纸本)0780339703

Since a few years SiGe/Si heterodevices have entered the semiconductors world. In particular, the SiGe heterobipolar transistor (SiGe HBT) has demonstrated a record f(max) value of 160 GHz. The SiGe heterofieldeffect transistor (SiGe HFET) is presently catching up in performance with a reported speed of 92 GHz. This paper reviews device and circuit results focusing on cut-off frequencies, delays, noise and power. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components.

关键词： Silicon germanium Si technology high CAPACITY microelectronic component

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On the reverse IV-characteristics of Schottky diodes on n-GaN

On the reverse IV-characteristics of Schottky diodes on n-Ga...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Daumiller, I Vescan, A Heinle, U Scholz, F Kohn, E Univ Ulm Dept Electron Devices & Circuits D-98069 Ulm Germany

ISBN: (纸本)0780339703

In this investigation the I/V and C/V characteristics of Schottky diodes on uniformly n-doped GaN grown on sapphire are analyzed in the bias and temperature regime. Since the barrier height of metal-GaN contacts depends strongly on the work function differences, two Schottky barrier materials with high work function difference to GaN and thus high barrier height have been considered: (A) Pt with a barrier height to n-doped GaN of approx. /spl Phi//sub B/=1.1 eV and (B) degenerately p/sup +/-doped Si in a "Schottky barrier-like" configuration.

关键词： BARRIER HEIGHT Schottky diodes Schottky barriers gallium nitrate Work function Schottky Sapphire

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Depletion mode Al₂O₃/GaAs MOSFETs with high current density

Depletion mode Al<sub>2</sub>O<sub>3</sub>/GaAs MOSFETs with...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Parikh, P Chavarkar, P Keller, B Mishra, U Univ Calif Santa Barbara Santa Barbara CA 93106 USA

ISBN: (纸本)0780339703

The growing field of wireless communication has necessitated the need for ultra low power, high speed transistor technology. Low gate leakage in FETs is required for several applications, most notably low power high-speed ICs and high reliability power amplifiers. Furthermore, enhancement-mode FETs with low gate-leakage necessary for dense low power ICs are currently extremely difficult to achieve. An insulator gate would be a natural choice for high speed GaAs FETs with minimal gate leakage. To this end we are pursuing the development of GaAs MOSFET technology with Al2O3 obtained by the wet oxidation of AlxGa1-xAs in steam as the gate insulator.

关键词： MOSFET devices

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Performance of InAlGaAs/InGaAs HBTs with tunneling AlAs barrier layer

Performance of InAlGaAs/InGaAs HBTs with tunneling AlAs barr...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Valsaraj, N Sabbah, R Jones, W Ikossi-Anastasiou, K Louisiana State Univ Baton Rouge LA 70803 USA

ISBN: (纸本)0780339703

With the high speed demands on HBTs the base thickness is constantly being reduced making the base access etch one of the most challenging processing steps for industrial fabrication. In InAlGaAs/InGaAs HBTs an AlAs tunneling barrier layer can act as a selective etch stop layer. HBTs with a narrow base can then be processed using selective base access etch. The presence of a thin tunneling AlAs layer enhances the device performance without altering the offset voltage. HBTs with quaternary compounds and AlAs tunneling barriers show a significant reduction of the offset voltage, negative resistance effects and an improvement of the output conductance suggesting suitability for applications in integrated circuits and communication systems operating in microwave range frequencies.

关键词： Barrier Layer output conductance Tunneling equipment performance quaternary compounds offset voltage COMMUNICATION SYSTEMS high speed base thickness etch stop layer

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Integrated active microstrip antenna for communication and identification applications

Integrated active microstrip antenna for communication and i...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Carrez, F Stolle, R Vindevoghel, J Univ Sci & Technol Lille UMR CNRS 9929 Inst Elect & Microelect Nord F-59652 Villeneuve Dascq France

ISBN: (纸本)0780339703

An integrated microstrip active antenna to be used in a miniature microwave transponder for communication and identification purposes is described. This active antenna, operating at 9.9 GHz, has a two layer structure and consists of a compact microstrip array antenna and a DPSK Modulator/ASK Demodulator. The radiating part of the active antenna is composed of electromagnetically fed, gap-coupled resonators which provide a good trade-off between performance and size reduction. The microwave circuit contains a single semiconductor component, a "cold" GaAs MESFET, which performs both the modulator and demodulator functions. The novel methods used to realize the active antenna provide high performance, size reduction, low power consumption and low cost which are major considerations in the design of microwave transponders.

关键词： active antennas Microstrip antennas Communication Research demodulators Size reduction microstrip antenna arrays Microwave circuits Lamellar structures Device Transponder Modulators

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Monte Carlo study of anisotropic hole velocity overshoot in sub-0.1 μm GaAs devices for complementary circuit applications

Monte Carlo study of anisotropic hole velocity overshoot in ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Tagawa, Y Awano, Y Yokoyama, N Fujitsu Labs Ltd Atsugi Kanagawa 24301 Japan

ISBN: (纸本)0780339703

In order to evaluate tile high-speed and low-power performance of sub-0.1 mu m-sized GaAs devices used for complementary circuits, we studied full-band Monte! Carlo simulations of high field hole transport in bulk GaAs and one-dimensional p-i-p diodes. We found that the peak hole velocity under an electric field of 100 kV/cm reaches 2.2 x 10(7) cm/sec at room temperature, which is about three times higher than the steady-state drift, velocity. We also simulated anisotropic hole velocity overshoot effects anti demonstrated that the peak velocity with an electric field applied along the [100] direction is about 30% higher than in other. directions, Although the saturation velocities are almost, the same. In this paper, we discuss the hole velocity overshoot, affect on the characteristics of a nanometer-sized device, and present a similar anisotropic dependence, on the current drivability of 0.05 mu m p-i-p diodes.

关键词： Semiconducting gallium arsenide

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Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's

Lateral oxide current aperture for InP-based vertical electr...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Yen, JC Blank, HR Mishra, UK Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA

ISBN: (纸本)0780339703

We demonstrate current aperturing of InP-based resonant tunneling diodes using partial lateral oxidation of AlAsSb. The current aperturing can be used to accurately tune the peak current of the resonant tunneling diodes to a desired level. This tuning capability enhances device parameter control, and improves the yield and mass production feasibility of integrated circuits containing resonant tunneling diodes. Our results indicate that the current aperturing structure appears not to significantly degrade the transport properties of an upstream electronic device. The current aperture technology requires minimal processing overhead, and is applicable to other vertical electron current flow InP-based electronic and optoelectronic devices.

关键词： electron current transport properties Optoelectronic devices peak current apertures Resonant tunneling lateral oxidation vertical

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Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

Scattering of electrons at threading dislocations in GaN and...

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Weimann, Nils G. Eastman, Lester F. Cornell Univ Ithaca NY United States

A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines. We therefore propose a vertical microwave transistor structure.

关键词： Semiconducting gallium compounds

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Reduction of short channel effects in self-aligned AlInAs/GaInAs HEMTs' by lateral bandgap engineering for high f_max

Reduction of short channel effects in self-aligned AlInAs/Ga...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chavarkar, P Migliore, E Yen, J Fischetti, MV Laux, SE Mishra, UK Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA

ISBN: (纸本)0780339703

Advances in materials and processing technology have made possible the fabrication of HEMTs with f(tau) as high as 340 GHz (f(max)=250 GHz). However it is difficult to simultaneously obtain a high f(tau) and f(max). This is because a high f,requires a self-aligned FET structure However the reduced source-drain separation results in short channel effects like drain induced barrier lowering and high output conductance. Also the gate-drain capacitance Cgd is increased. This reduces the f(max) of the device.

关键词： Channel Effect bandgap engineering automatic calibration output conductance Processing technologies reduction

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