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检索条件"任意字段=IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits"

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high-speed CRYOGENIC OPERATION OF SUBMICRON PSEUDOMORPHIC INGAAS/GAAS FETS

HIGH-SPEED CRYOGENIC OPERATION OF SUBMICRON PSEUDOMORPHIC IN...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： LASKAR, J MARANOWSKI, S KRUSE, J KETTERSON, A ADESIDA, I FENG, M KOLODZEY, J

ISBN: (纸本)0780304918

Comprehensive DC and high frequency measurements of submicron pseudomorphic AlGaAs/InGaAs MODFETs, InGaAs/GaAs MESFETs, and AlGaAs/InGaAs MISFETs at cryogenic temperatures are discussed. devices with gate lengths from 0.8 μm to 0.3 μm over a temperature range from 300 K to 110 K were measured. Similar variation in the measured extrinsic current gain cutoff frequency, f_T, and similar dependences of the effective electron velocity, v_eff, with reduced lattice temperature for the different field-effect transistors were determined. These results provide direct experimental evidence that the saturated velocity of electrons is the most important parameter for high speed operation, and with proper design these different pseudomorphic InGaAs/GaAs field-effect transistors provide similar potential for high speed operation.

关键词： Transistors, Field Effect

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A STUDY OF ELECTRON TRANSIT-TIME IN BALLISTIC DIODES USING A MULTI-VALLEY HYDRODYNAMIC TRANSPORT MODEL

A STUDY OF ELECTRON TRANSIT-TIME IN BALLISTIC DIODES USING A...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： WOOLARD, DL TREW, RJ LITTLEJOHN, MA KELLEY, CT

ISBN: (纸本)0780304918

The use of a multivalley hydrodynamic transport model to investigate electron transit time through submicron GaAs electron device structures is discussed. The study was performed to determine the feasibility of utilizing the velocity overshoot effect in reducing the overall transit time. This model, which incorporates a separate set of hydrodynamic equations for each conduction band valley (Γ, L and X) and allows for electron exchange through energy dependent relaxation parameters, is applied to a structure which reduces upper valley occupancy and enhances device transit time. The results of this study indicate that, while velocity speed-up is minimal in the neighborhood of the active (low-doped) region, the velocity overshoot can be extended into the collector region (high-doped region) with significant transit time enhancement.

关键词： semiconductor Diodes

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DOPING PROFILES FOR OPTIMUM CLASS-B PERFORMANCE OF GAAS-MESFET AMPLIFIERS

DOPING PROFILES FOR OPTIMUM CLASS-B PERFORMANCE OF GAAS-MESF...

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CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： WINSLOW, TA TREW, RJ GILMORE, P KELLEY, CT

ISBN: (纸本)0780304918

The doping profiles and matching circuit conditions for maximum power added efficiency of GaAs MESFET amplifiers are investigated. A large signal MESFET model is used to simultaneously optimize doping and circuit parameters. Efficiency is found to be most sensitive to the breakdown voltage of the MESFET, which can be improved by reducing I_dss, lowering the surface doping concentration, and allowing the peak doping region to be deeper in the channel. high efficiency cannot be obtained without proper harmonic tuning at both the load and generator side of the MESFET. Second harmonic impedances at the generator and load must be minimized. The third harmonic impedance at the generator and load should be maximized while the fundamental impedances should be selected to conjugately match the device.

关键词： semiconductor devices, MESFET

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DETERMINATION OF THE OPTIMUM CONDITION TO INTRODUCE THE DOPING IN THE CHANNEL OF high-speed DOPED CHANNEL ALGAAS/INGAAS HFETS

DETERMINATION OF THE OPTIMUM CONDITION TO INTRODUCE THE DOPI...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： DICKMANN, J WOELK, C SCHURR, A WIERSCH, A KOHN, E NAROZNY, P DAEMBKES, H

An investigation of the introduction of doping into the channel of Al0.25Ga0.75As/In0.2Ga0.8As HFETs to obtain high saturation currents and reasonable low noise performance is discussed. The device performance is expe... 详细信息

ISBN: (纸本)0780304918

An investigation of the introduction of doping into the channel of Al_0.25Ga_0.75As/In_0.2Ga_0.8As HFETs to obtain high saturation currents and reasonable low noise performance is discussed. The device performance is experimentally compared to that of undoped channel HFETs having the same layer structure. For a 0.35-μm gate length backside doped channel HFET a maximum transconductance of 625 mS/mm, a maximum saturation current at V_GS = +0.8 V of 720 mA/mm, a power gain cutoff frequency of 195 GHz, and at 18 GHz a noise figure of 1.1 dB with 17 dB associated gain were measured.

关键词： Transistors, Field Effect

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high-speed SHORT CAVITY STRAINED-LAYER MULTIPLE QUANTUM-WELL LASERS

HIGH-SPEED SHORT CAVITY STRAINED-LAYER MULTIPLE QUANTUM-WELL...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： LESTER, LF SCHAFF, WJ SONG, X OFFSEY, SD EASTMAN, LF

The high-speed response and optical properties of strained-layer In0.3Ga0.7As four and five quantum-well ridge waveguide lasers fabricated by chemically-assisted ion beam etching (CAIBE) are presented. The threshold c... 详细信息

ISBN: (纸本)0780304918

The high-speed response and optical properties of strained-layer In_0.3Ga_0.7As four and five quantum-well ridge waveguide lasers fabricated by chemically-assisted ion beam etching (CAIBE) are presented. The threshold current variation with cavity length is very similar for the two-layer designs, but the differential gain decreases more quickly with optical loss in the four quantum-well devices. Consequently, whereas the 200-400 μm cavity length lasers from the four quantum-well wafer are superior to those from the five quantum-well layer in terms of high speed performance, the 50- and 100-μm long devices are nearly identical. A CW 3-dB bandwidth of 22 GHz and a record 3-dB bandwidth of 26 GHz under pulsed bias have been measured on 50 μm long lasers. 100-μm cavity length lasers exhibit excellent modulation efficiency with a typical 3-dB bandwidth of 20 GHz.

关键词： Lasers, semiconductor

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YIELD OPTIMIZATION USING A GAAS PROCESS SIMULATOR COUPLED TO A PHYSICAL DEVICE MODEL

YIELD OPTIMIZATION USING A GAAS PROCESS SIMULATOR COUPLED TO...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： STONEKING, DE BILBRO, GL TREW, RJ GILMORE, P KELLEY, CT

ISBN: (纸本)0780304918

The enhancement of TEFLON, a physics-based large-signal GaAs MESFET model and circuit simulator that predicts and optimizes the yield of GaAs MESFET designs before fabrication, is discussed. Device acceptance criteria include both small- and large-signal RF operating characteristics such as small-signal gain, maximum power added efficiency, and output power at 1 dB gain compression. SUPREM 3.5, a process simulator, has been incorporated into TEFLON so that the MESFET channel donor distribution can be described directly from processing specifications for material deposition, ion implantation, and implant annealing. Monte Carlo techniques are used to estimate yield when disturbances in the MESFET parameters are modeled as multivariate Gaussian distributions. Finally, the yield estimator has been integrated with an optimizer so that a design can be centered for maximum yield in the presence of process disturbances.

关键词： semiconductor devices, MESFET

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EMITTER STRUCTURE INFLUENCE ON THE ELECTRON-TRANSPORT MECHANISM IN RESONANT TUNNELING DIODES

EMITTER STRUCTURE INFLUENCE ON THE ELECTRON-TRANSPORT MECHAN...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： KOENIG, ET JOGAI, B HUANG, CI EVANS, KR STUTZ, CE Wright Lab WPAFB OH USA

A study conducted on six double-barrier resonant tunneling diode structures with identical GaAs quantum wells, Al0.42Ga0.58As barriers, and GaAs collector space layers grown by molecular beam epitaxy (MBE) is discusse... 详细信息

ISBN: (纸本)0780304918

A study conducted on six double-barrier resonant tunneling diode structures with identical GaAs quantum wells, Al_0.42Ga_0.58As barriers, and GaAs collector space layers grown by molecular beam epitaxy (MBE) is discussed. The emitter layers, however, were varied in order to establish the effects of different emitter conduction band configurations on device performance. The analysis is carried out both experimentally, by examining I-V and dI/dV measurements, and theoretically, by calculating and studying the self-consistent solution of the conduction bandedge, transmission probability, carrier concentration, and wavefunction probability density. Insight is offered into how bandedge variations affect the transmission qualities of a double-barrier resonant tunneling diode structure and hence the resulting I-V characteristic.

关键词： semiconductor Diodes, Tunnel

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SUPERCONDUCTING DIGITAL circuits WITH LOW TC AND high-TC MATERIALS

SUPERCONDUCTING DIGITAL CIRCUITS WITH LOW TC AND HIGH-TC MAT...

引用

CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： KANG, JH PRZYBYSZ, JX MILLER, DL MEIER, DL

The authors argue that superconducting digital electronics is the future trend for high-speed and low-power applications. Low Tc technology based on stable Nb/AlOx/Nb tunneling junctions has been successful in constru... 详细信息

ISBN: (纸本)0780304918

The authors argue that superconducting digital electronics is the future trend for high-speed and low-power applications. Low T_c technology based on stable Nb/AlO_x/Nb tunneling junctions has been successful in constructing most of the digital circuit logic elements. A four-stage shift register constructed with latching logic operated up to 4 GHz with a power consumption of about 60 μW per gate. A 12-b analog-digital converter constructed with a single flux quantum (SFQ) logic showed proper operation with the total power dissipated being only about 100 μW. Fabrication of Josephson tunneling junctions with high T_c materials has been tougher than with low T_c materials. However, recently developed very high speed rapid single flux quantum (RSFQ) logic circuits can be applied to weak link type junctions fabricated wtih YBa₂Cu₃O_7-x films. Simulations of the various circuits with weak link type junctions, e.g., shift registers, analog-digital converters, etc., show fast operation and reasonable margins. Applications of similar concepts can be applied to NbN circuits operating at above 10 K.

关键词： Electronic circuits, Digital

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THE FEATURES OF HOLE RESONANT TUNNELING IN SI1-XGEX/SI DOUBLE BARRIER STRUCTURES

THE FEATURES OF HOLE RESONANT TUNNELING IN SI1-XGEX/SI DOUBL...

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CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： XU, DX SHEN, GD WILLANDER, M HANSSON, GV

The features of hole resonant tunneling in Si0.8Ge0.2 double barrier structures are studied both experimentally and theoretically. The theoretical calculations are based on the principles proposed in a recent study on... 详细信息

ISBN: (纸本)0780304918

The features of hole resonant tunneling in Si_0.8Ge_0.2 double barrier structures are studied both experimentally and theoretically. The theoretical calculations are based on the principles proposed in a recent study on the origin of resonant tunneling and its temperature dependence. The calculation results explain the different trends of variations with the temperature for the characteristic currents and voltages, if the first resonance is attributed to hh tunneling via the first hh subband and the second resonance to lh tunneling via first lh subband. The calculated peak current density for different structures also agrees well with the experiments in the low temperature region. The calculations show that at current resonance, the tunneling level can be higher or lower than the quasi Fermi-level in the spacer. The distinctly different temperature dependence of the first and second resonances can be understood by considering the different population of the hh and lh bands in the spacer region and the temperature dependences of E_f and effective masses.

关键词： semiconductor devices

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GALLIUM-ARSENIDE METAL-INSULATOR-semiconductor FIELD-EFFECT TRANSISTORS (MISFET) WITH LOW-TEMPERATURE GAAS INSULATING LAYERS

GALLIUM-ARSENIDE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT ...

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CONF ON advanced concepts IN high speed semiconductor devices AND circuits

作者： BOZADA, CA DETTMER, RW EPPERS, CL NAKANO, K STUTZ, CE WALLINE, RE

ISBN: (纸本)0780304918

Metal-insulator-semiconductor field effect transistors (MISFETs) using low temperature (LT) GaAs as the insulator layer were fabricated and characterized. In this study, the influence of the AlAs spacer layer on MISFET properties is explored. Structures were grown with the thickness of the AlAs layer varied from 0 to 30 nm with the remainder of the total 60 nm insulator layer composed of LT GaAs. Two control structures were also grown, a standard metal semiconductor field effect transistor (MESFET) and a MISFET with a 50 nm Al_0.80Ga_0.20As insulator layer. Transistors with 1.2 × 200 μm gates and 5 μm source drain spacings were fabricated using standard processing techniques. Breakdown voltages as high as 48 V were found for the LT MISFETs, compared to 5 V for the MESFET and 12 V for the Al_0.80Ga_0.20As MISFET. The detailed characterization of the breakdown, along with the effects of the various insulating layers on other FET parameters such as current, transconductance, and cutoff frequency, is described.

关键词： semiconductor devices, MISFET

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