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Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors

Control of InP/InGaAs heterojunction bipolar transistor perf...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J. Hu H.-F. Chau D. Pavlidis K. Tomizawa P. Marsh Solid-state Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA School of Engineering Meiji University Kawasaki Japan

Theoretical and experimental investigations using InP/InGaAs heterojunction bipolar transistors (HBTs) with and without undoped collectors are reported. A steady-state and transient Monte Carlo technique was used to evaluate each design. The switching and steady-state performance of the undoped collector HBT is faster (1.33 ps vs. 2.10 ps switching, and 1.35 ps vs. 2.64 steady-state performance) at a given collector current density. A self-aligned HBT process using reactive ion etching (RIE) for reaching the base is described. Conventional and undoped collector devices had h/sub fe/ gains on the order of 63 and maximum cutoff frequency of 18 GHz using a 2 mu m*11 mu m emitter geometry.< >

关键词： Indium phosphide Indium gallium arsenide Heterojunction bipolar transistors Thyristors Electrons Steady-state Gallium arsenide Buffer layers Solid state circuits Laboratories

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Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

Emitter structure influence on the electron transport mechan...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： E.T. Koenig B. Jogai C.I. Huang K.R. Evans C.E. Stutz Research Division of Electronic Technology Wright Laboratories OH USA Universal Energy Systems Inc. Dayton OH USA

A study conducted on six double-barrier resonant tunneling diode structures with identical GaAs quantum wells, Al/sub 0.42/Ga/sub 0.58/As barriers, and GaAs collector space layers grown by molecular beam epitaxy (MBE) is discussed. The emitter layers, however, were varied in order to establish the effects of different emitter conduction band configurations on device performance. The analysis is carried out both experimentally, by examining I-V and dI/dV measurements, and theoretically, by calculating and studying the self-consistent solution of the conduction bandedge, transmission probability, carrier concentration, and wavefunction probability density. Insight is offered into how bandedge variations affect the transmission qualities of a double-barrier resonant tunneling diode structure and hence the resulting I-V characteristic.< >

关键词： Electron emission Resonant tunneling devices Diodes Gallium arsenide Molecular beam epitaxial growth Probability Physics semiconductor process modeling Filters Space technology

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RF-current de-confinement in III-V HFETs

RF-current de-confinement in III-V HFETs

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J. Dickmann E. Kohn S. Strahle A. Wiersch H. Kunzel H. Lee H. Nickel Research Center Daimler Benz Aerospace Ulm Germany Department of Electron Devices and Circuits University of Ulm (EBS) Ulm Germany Heinrich-Hertz-Institute Berlin Germany Siemens Corporate Research Inc. Princeton NJ USA David Samoff Research Center Inc. Princeton NJ USA ADB-Telecom Research Center Darmstadt Germany

A criterion for the carrier confinement in III-V HFETs is derived from the linear correlation between the two ratios Cgs/Cgd and gm/gds, where Cgs is the gate/source capacitance, Cgd is the gate/drain capacitance, gm is the transconductance, and gds is the output conductance. FETs of a number of distinctly different layer structures have been compared on this basis. The model finds carrier flow confinement dominated by the structural aspect ratio and the extension of the drain region. In the RF analysis no evidence for additional confinement of hot carriers by a deep-quantum-well channel configuration is found either in GaAs-based or in InP-based material systems.< >

关键词： III-V semiconductor materials HEMTs MODFETs Carrier confinement Capacitance FETs Gallium arsenide Indium phosphide circuits Hot carriers

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Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

Determination of the optimum condition to introduce the dopi...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J. Dickmann C. Woelk A. Schurr A. Wiersch E. Kohn P. Narozny H. Daembkes Research Center Daimler Benz Aerospace Ulm Germany Halbleitertechnik-technologie University of Duisburg-Essen Duisburg Germany Fachbereich elektrische Bauelemente und Schooltungen Universität Ulm Ulm Germany

An investigation of the introduction of doping into the channel of Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As HFETs to obtain high saturation currents and reasonable low noise performance is discussed. The device performance is experimentally compared to that of undoped channel HFETs having the same layer structure. For a 0.35- mu m gate length backside doped channel HFET a maximum transconductance of 625 mS/mm, a maximum saturation current at V/sub Gs/=+0.8 V of 720 mA/mm, a power gain cutoff frequency of 195 GHz, and at 18 GHz a noise figure of 1.1 dB with 17 dB associated gain were measured.< >

关键词： Doping HEMTs MODFETs Transconductance Cutoff frequency Noise figure Gain Current measurement Power measurement Frequency measurement

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high performance HBTs with built-in base fields: exponentially-graded doping vs. graded composition

High performance HBTs with built-in base fields: exponential...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： D.C. Streit A.K. Oki D.K. Umemoto L.T. Tran K.W. Kobayashi Electronics and Technology Division TRW Redondo Beach CA USA

A comparison of exponentially graded doping and graded composition as a means of producing built-in drift fields in the base of npn GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is discussed. The reduction in base transit time ( tau /sub B/) associated with the built-in fields is substantial. Compared to uniformly doped devices with the same base width, tau /sub B/ is reduced by approximately 70% for both the graded doping and graded composition profiles. The field associated with exponentially graded base doping is derived, accounting both for bandgap narrowing effects and for degeneracy. It is found that the built-in field due to doping gradients is substantially larger than that expected when computed using only nondegenerate Boltzmann statistics. The increase in device performance when exponentially graded doping is used is demonstrated using a distributed HBT amplifier with 24-GHz bandwidth.< >

关键词： Heterojunction bipolar transistors Doping profiles Photonic band gap Bandwidth Cutoff frequency Statistical distributions Distributed amplifiers Bipolar transistors Silicon Gain

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Electrical and thermal characteristics of heterojunction bipolar transistors fabricated on peeled film epitaxial layers

Electrical and thermal characteristics of heterojunction bip...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： M.E. Cheney R.C. Fitch G.D. Robinson C.I. Huang R.A. Neidhard Solid State Electronics Wright Laboratories OH USA Wright State University Dayton OH USA

The feasibility of peeling the active AlGaAs/GaAs heterojunction bipolar transistor (HBT) epitaxial thin films from the original GaAs substrate and the subsequent van der Waals bonding of the films to AlN, InP and diamond on silicon substrates is discussed. HBTs were first fabricated on epitaxial layers containing an AlAs separating layer. The wafer was divided, and a portion of the wafer was then peeled and van der Waals bonded to various substrates. The van der Waals bond demonstrated excellent thermal and mechanical stability by withstanding subsequent processing steps up to 250 degrees C. The lifted devices bonded to the higher thermal conductivity substrates show excellent DC and RF performance. The average device junction temperature was also characterized. Further improvements can be accomplished by utilizing substrates with a smooth surface morphology having a high thermal conductivity.< >

关键词： Substrates Wafer bonding Thermal conductivity Gallium arsenide Heterojunction bipolar transistors semiconductor thin films Thin film transistors semiconductor films Indium phosphide Silicon

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Superconducting digital circuits with low-T/sub c/ and high-T/sub c/ materials

Superconducting digital circuits with low-T/sub c/ and high-...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： J.H. Kang J.X. Przybysz D.L. Miller D.L. Meier Westinghouse Science and Technology Center Pittsburgh PA USA

The authors argue that superconducting digital electronics is the future trend for high-speed and low-power applications. Low-T/sub c/ technology based on stable Nb-AlO/sub x/-Nb tunneling junctions has been successful in constructing most of the digital circuit logic elements. A four-stage shift register constructed with latching logic operated up to 4 GHz with a power consumption of about 60 mu W per gate. A 12-b analog-digital coverter constructed with a single flux quantum (SFQ) logic showed proper operation with the total power dissipated being only about 100 mu W. Fabrication of Josephson tunneling junctions with high-T/sub c/ materials has been tougher than with low-T/sub c/ materials. However, recently developed very high speed rapid single flux quantum (RSFQ) logic circuits can be applied to weak link type junctions fabricated with YBa/sub 2/Cu/sub 3/O/sub 7-x/ films. Simulations of the various circuits with weak link type junctions, e.g., shift registers, analog-digital converters, etc., show fast operation and reasonable margins. Applications of similar concepts can be applied to NbN circuits operating at above 10 K.< >

关键词： Digital circuits Josephson junctions Tunneling Logic circuits Shift registers Analog-digital conversion Superconducting logic circuits Energy consumption Fabrication Circuit simulation

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Yield optimization using a GaAs process simulator coupled to a physical device model

Yield optimization using a GaAs process simulator coupled to...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： D.E. Stoneking G.L. Bilbro R.J. Trew P. Gilmore C.T. Kelley Department of Electrical and Computer Engineering North Carolina State University Raleigh NC USA Department of Mathematics North Carolina State University Raleigh NC USA

The enhancement of TEFLON, a physics-based large-signal GaAs MESFET model and circuit simulator that predicts and optimizes the yield of GaAs MESFET designs before fabrication, is discussed. Device acceptance criteria include both small- and large-signal RF operating characteristics such as small-signal gain, maximum power added efficiency, and output power at 1 dB gain compression. SUPREM 3.5, a process simulator, has been incorporated into TEFLON so that the MESFET channel donor distribution can be described directly from processing specifications for material deposition, ion implantation, and implant annealing. Monte Carlo techniques are used to estimate yield when disturbances in the MESFET parameters are modeled as multivariate Gaussian distributions. Finally, the yield estimator has been integrated with an optimizer so that a design can be centered for maximum yield in the presence of process disturbances.< >

关键词： Gallium arsenide Circuit simulation MESFET circuits Predictive models Design optimization Yield estimation Coupling circuits Fabrication Radio frequency Power generation

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Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

Gallium arsenide metal-insulator-semiconductor field effect ...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： C.A. Bozada R.W. Dettmer C.L. Eppers K. Nakano C.E. Stutz R.E. Walline Solid State Electronics Laboratory OH USA

Metal-insulator-semiconductor field effect transistors (MISFETs) using low temperature (LT) GaAs as the insulator layer were fabricated and characterized. In this study, the influence of the AlAs spacer layer on MISFET properties is explored. Structures were grown with the thickness of the AlAs layer varied from 0 to 30 nm with the remainder of the total 60 nm insulator layer composed of LT GaAs. Two control structures were also grown, a standard metal semiconductor field effect transistor (MESFET) and a MISFET with a 50 nm Al/sub 0.80/Ga/sub 0.20/As insulator layer. Transistors with 1.2*200 mu m gates and 5 mu m source drain spacings were fabricated using standard processing techniques. Breakdown voltages as high as 48 V were found for the LT MISFETs, compared to 5 V for the MESFET and 12 V for the Al/sub 0.80/Ga/sub 0.20/As MISFET. The detailed characterization of the breakdown, along with the effects of the various insulating layers on other FET parameters such as current, transconductance, and cutoff frequency, is described.< >

关键词： Gallium arsenide Metal-insulator structures MISFETs Insulation FETs MESFETs Temperature Electric breakdown Transconductance Cutoff frequency

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The features of hole resonant tunneling in Si/sub 1-x/Ge/sub x//Si double barrier structures

The features of hole resonant tunneling in Si/sub 1-x/Ge/sub...

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ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： D.X. Xu G.D. Shen M. Willander G.V. Hansson Department of Physics Linkoping University Linkoping Sweden

The features of hole resonant tunneling in Si/sub 0.8/Ge/sub 0.2/ double barrier structures are studied both experimentally and theoretically. The theoretical calculations are based on the principles proposed in a recent study on the origin of resonant tunneling and its temperature dependence. The calculation results explain the different trends of variations with the temperature for the characteristic currents and voltages, if the first resonance is attributed to hh tunneling via the first hh subband and the second resonance to lh tunneling via first lh subband. The calculated peak current density for different structure also agrees well with the experiments in the low temperature region. The calculations show that at current resonance, the tunneling level can be higher or lower than the quasi Fermi-level in the spacer. The distinctly different temperature dependence of the first and second resonances can be understood by considering the different population of the hh and lh bands in the spacer region and the temperature dependences of E/sub f/ and effective masses.< >

关键词： Resonant tunneling devices Temperature dependence Silicon germanium Germanium silicon alloys Resonance Temperature measurement Molecular beam epitaxial growth Germanium alloys Current measurement Voltage

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