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3 GHz resonant tunneling clocked comparator

3 GHz resonant tunneling clocked comparator

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Brar, B. Broekaert, T.P.E. van der Wagt, J.P.A. Seabaugh, A.C. Moise, T.S. Morris, F.J. Beam III, E.A. Frazier, G.A. Raytheon TI Systems Dallas TX United States

The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for designing ultra-high-speed analog and digital circuits. Here we demonstrate an RTD-HFET comparator circuit that operates up to 3 GHz clock frequency. The RTD based comparator allows us to employ 75% fewer devices than all-transistor comparators. The circuit is measured to have a single-tone spur-free-dynamic range of at least 40 dB and a sensitivity of 5 mV at a 2 GHz clock.

关键词： Comparator circuits

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InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

InP double heterojunction bipolar transistors with chirped I...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Yang, K Munns, GO East, JR Haddad, GI Univ Michigan Ctr High Frequency Microelect Dept Elect Engn & Comp Sci Ann Arbor MI 48109 USA

ISBN: (纸本)0780339703

InP DHBT's with a chirped InGaAs/InP superlattice B-C junction, which were grown by CBE, have been fabricated and characterized. The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A delta-doped thin layer was included at the end of the CSL to offset the quasielectric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction. The InP/InGaAs CSL DHBT with a 6000 Angstrom-thick InP collector demonstrated a high BVCEO of 18.3 V and a BVBCO of 22.8 V with a typical current gain of 55. Maximum cutoff frequencies of f(max) = 146 GHz and f(T) = 71 GHz were obtained from the fabricated single-finger 2x10 mu m(2)-emitter DHBT. The devices with different emitter dimensions were also fabricated and characterized.

关键词： Indium phosphide

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high speed high power AlGaN/GaN heterostructure field effect transistors with improved Ohmic contacts

High speed high power AlGaN/GaN heterostructure field effect...

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chu, Kenneth K. Murphy, Michael J. Burm, Jinwook Schaff, William J. Eastman, Lester F. Botchkarev, Andrei Tang, Haipeng Morkoc, Hadis Cornell Univ Ithaca NY United States

Ti/Al/Ti/Au ohmic contacts with low contact resistance (as low as 0.24 Ω mm) were used in fabricating short gate length modulation-doped field effect transistors on MBE-grown AlGaN/GaN layers. Maximum drain current achieved was above 1 A/mm with a transconductance of 182 mS/mm. RF measurements showed a maximum fT of 35.9 GHz and an fmax of 57.0 GHz, both achieved with 0.15 μm gates. Simple analysis showed an electron saturation velocity of 1.3×107 cm/s in our device structure. Gate-drain breakdown voltages for these devices was measured to be 30 to 35 V.

关键词： Junction gate field effect transistors

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Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs

Parameter extraction technique for the small-signal equivale...

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Lee, Seonghearn Yu, Hyun Kyu Hankuk Univ of Foreign Studies Kyungki-do Korea Republic of

The MOSFET equivalent circuit model parameters are determined by performing the refined extraction method using Z-parameter formulations for parasitics and Y-parameter ones for intrinsic parameters without optimization process. For MOSFETs with various gate voltage and geometric layout, excellent correspondence is observed between measured and fitted data of Z-parameter equations and the extracted intrinsic parameters exhibit mostly frequency-independent behavior. The scaling rule to gate width is observed to be applied for the extracted intrinsic parameters within reasonable errors. These extraction results essentially demonstrate the validity of this method in the wide range of gate bias and layout.

关键词： MOSFET devices

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Oxides on SiC

Oxides on SiC

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Cooper Jr., James A. Purdue Univ West Lafayette United States

Silicon carbide (SiC) is the only compound semiconductor whose native oxide is SiO2. This makes it possible to construct a variety of MOS devices in SiC. However, the SiC MOS interface is more complex than on silicon, due to the presence of carbon in the compound and the non-cubic crystal structure. Over the last few years, the midgap interface state density on p-type 6H-SiC has been reduced from the mid-1011 to the mid-1010 eV-1 cm-2 range, and the fixed oxide charge from about 2×1012 to 5×1011 cm-2. Studies of oxide reliability are underway, and preliminary results on n-type 6H-SiC extrapolate to a lifetime of 20,000 years at a field of 3 MV/cm at 145 °C.

关键词： MOS devices

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Impact ionization in InP-based HEMTs

Impact ionization in InP-based HEMTs

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Webster, Richard T. Anwar, A.F.M. Wu, Shangli RL/ERAC Hanscom AFB MA United States

A physical model of impact ionization in InP HEMTs is developed and incorporated in an equivalent circuit model for comparison with experimental observations showing excellent agreement. Impact ionization is modeled by a voltage dependent current source in an RC network at the drain end. The RC branch behaves like a low pass filter that imparts a frequency dependence to the impact ionization current source and enables one to model the inductive nature of S22 at low frequencies. Theoretical calculations show a compression of transconductance due to impact ionization with increasing gate bias that is supported by experimental data. Finally, an experimental method is suggested to extract impact ionization induced transconductance using Y21.

关键词： high electron mobility transistors

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InGaAs PIN diodes for high-isolation W-band monolithic integrated switching applications

InGaAs PIN diodes for high-isolation W-band monolithic integ...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Alekseev, E Pavlidis, D Cui, DL Univ Michigan Dept Elect Engn & Comp Sci Ann Arbor MI 48109 USA

ISBN: (纸本)0780339703

The design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices is reported, and the impact of InGaAs PIN diode parameters on switch performance is discussed. PIN diodes made of ZnGaAs on InP offer several significant advantages over conventional GaAs on GaAs technology i.e. (i) compatibility with InP-based high-frequency HBT and HEMT transistors and possibility of integration on the same wafer (ii) lower turn-on voltage and smaller access resistance due to higher electron mobility and lower bandgap of InGaAs, compared with GaAs. As a result lower power consumption and better switch characteristics can be obtained. A comparative analysis of measured single-and double-diode monolithic switch characteristics is reported together with the design and fabrication details. W-band single-pole single-throw (SPST) switch using two shunt diodes demonstrated isolation in excess of 40 dB while keeping insertion loss at 1.8 dB. When compared with the single-diode SPST switch, high-isolation double-diode switch showed improvement of ON/OFF ratio by as much as 17 dB at low biasing currents (I=0.3 mA per diode).

关键词： PIN diodes Indium gallium arsenide switching characteristics Electron mobility gallium arsenides diodes SPST switch DOUBLE DIODES MONOLITHIC insertion loss Indium phosphide

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Novel gate-controlled bipolar operation of MOS transistors with floating-body

Novel gate-controlled bipolar operation of MOS transistors w...

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Chi, Min-hwa Ching, Lih-Ying Natl Semiconductor Corp Santa Clara United States

We propose that the gate-induced-drain-leakage (GIDL) current of n-MOS or p-MOS transistors fabricated on thin SOI (with floating-body) can be used as base current for turning on the parasitic lateral npn or pnp bipolar transistors. Desired device design for GIDL triggered lateral bipolar operation calls maximum GIDL current (by thin gate oxide and drain engineering), large lateral bipolar action (by short channel length and source engineering), appears consistent with future CMOS scaling trend. This new mode of lateral bipolar operation, utilizing two undesirable effects (i.e. GIDL and floating-body) under normal MOS operation, may potentially offer high performance due to reduced base resistance, minimum input capacitance, and small source and drain junction capacitance's. The gate-controlled lateral bipolar transistors can be fabricated together with normal MOS transistors on SOI and is promising for high speed and high frequency applications.

关键词： MOSFET devices

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Material properties dependence of the peak to valley ratio of heterojunction interband tunneling diodes (HTD) and their use in RF circuits

Material properties dependence of the peak to valley ratio o...

引用

ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： El-Zein, N Maracas, G Nair, V Kramer, G Goronkin, H Motorola Inc Phoenix Corp Res Labs Tempe AZ 85284 USA

ISBN: (纸本)0780339703

We report here the development of InGaAs/InAlAs/InP Heterojunction-Interband-Tunneling Diodes (HITD). SIMS and other experimental techniques (TEM, Polaron...) are used to study the effect of dopant compensation and dopant diffusion into the well regions, on the I-V characteristic and the Peak-to-Valley Current Ratios (PVCRs) of the HITDs. The data shows an exponential dependence of the PVCR on Oxygen concentration in the sample. It also shows that the presence of doping impurities in the well region (which is determined using SIMS analysis) has a dramatic effect on the PVCR and the peak current density. Finally, it is mentioned that simulated results confirm the effect of these two mechanisms on the performance of the HITDs and an attempt on studying each separately is made. Use of HITD and Heterostructure Interband Tunneling Field Effect Transistors (HITFETs) enable the design of multifunctional RF circuits having fewer components compared to equivalent FET implementations. To demonstrate the proof of concept, we constructed a hybrid VCO consisting of a GaAs FET and an InP HITD. The VCO exhibited tuning by both Vd and Vg. Further improvements in circuit design and integration should facilitate the fabrication of an InP based integrated VCO.

关键词： RF circuit GaAs FET peak-to-valley ratio intermediate zone Indium phosphide oxygen concentration CIRCUIT DESIGN Field effect transistors

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Measurements of the Fermi level mobility of the GaInP/InGaAs/GaAs wide and narrow channel MODFET's

Measurements of the Fermi level mobility of the GaInP/InGaAs...

引用

Proceedings of the 1997 ieee/cornell conference on advanced concepts in high speed semiconductor devices and circuits

作者： Pereiaslavets, Boris Ridley, Brian Martin, Glenn Johansson, Josef Eastman, Lester F. Cornell Univ Ithaca NY United States

We have introduced a new technique to measure electron mobility at the highest energy levels (μmax) of the two-dimensional electron gas. This quantity is easy to measure and is sensitive to the occupation of the excited energy levels. This technique was applied to the investigation of the population of the excited energy levels in the wide and narrow channel GaInP/GaInAs/GaAs MODFETs. It is shown that electrons on excited energy levels in the wide channel device actually deteriorate the device performance. In the narrow channel MODFET only the ground state is populated. Thus the energy of the electrons is higher than in the wide channel device. Consequently narrow channel device has higher mobility. With the help of these measurements we optimized the MODFET structure for low voltage operation. For the first time 136 mW/mm output power with 46% power added efficiency at 2 V drain bias has been achieved with GaInP/GaInAs/GaAs MODFET.

关键词： Field effect transistors

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