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2017 ieee bipolar/bicmos circuits and technology meeting, BCTM 2017

ISBN: (纸本)9781509063833

The proceedings contain 38 papers. The topics discussed include: training of digital predistortion based on signal-to-distortion-ratio measurements;towards energy-efficient 5G Mm-wave links: exploiting broadband Mm-wave Doherty power amplifier and multi-feed antenna with direct on-antenna power combining;a linearization technique for bipolar amplifiers based on derivative superposition;60 GHz concurrent dual-polarization RX front-end in SiGe with antenna-IC co-integration;ultra low power analog design and technology for artificial neurons;a novel compact balanced reflect-type vector modulator topology;240 GHz RF-MEMS switch in a 0.13 μm SiGe bicmos technology;CMOS beyond Si: nanometer-scale III-V MOSFETs;performance improvement of a monolithically integrated c-band receiver enabled by an advanced photonic bicmos process;a multimode 5-6 GHz SiGe bicmos PA design powers emerging wireless LAN radio standards;operation of SiGe HBTs at cryogenic temperatures;thin-film layers with interfaces that reduce RF losses on high-resistivity silicon substrates;SiGe HBT/CMOS process thermal budget co-optimization in a 55-nm CMOS node;and 0.13-μm SiGe bicmos technology with more-than-Moore modules.

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Proceedings of the ieee bipolar/bicmos circuits and technology meeting

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technolo...

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2016 ieee bipolar/bicmos circuits and technology meeting, BCTM 2016

ISBN: (纸本)9781509004843

The proceedings contain 37 papers. The topics discussed include: Ge-on-insulator lateral bipolar transistors;a 76- to 81-GHz packaged single-chip transceiver for automotive radar;why is there no internal collector resistance in HICUM?;advantages of SiGe-pnp over Si-pnp for analog and RF enhanced Cbicmos and complementary bipolar design usage;DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi P a applications;current regulator with energy limitation in theunpowered state featuring bipolar discharge path;the broadband Darlington amplifier as a simple benchmark circuit for compact model verification at mm-wave frequency;an improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs;and scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications.

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Proceedings of the ieee bipolar/bicmos circuits and technology meeting

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technolo...

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ieee bipolar/bicmos circuits and technology meeting, BCTM 2015

ISBN: (纸本)9781467385510

The proceedings contain 40 papers. The topics discussed include: a 17 GHz programmable frequency divider for space applications in a 130 nm SiGe bicmos technology;SiGe HBT and bicmos process integration optimization within the DOTSEVEN project;110-140GHz single-chip reconfigurable radar front-end with on-chip antenna;a 92GHz bandwidth SiGe bicmos HBT TIA with less than 6dB noise figure;A 24GHz signal generator with 30.8 dBm output power based on a power amplifier with 24.7 dBm output power and 31% PAE in SiGe;SiGe HBT modeling for mm-wave circuit design;a 135-150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe bicmos technology;an injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe bicmos;single-chip transmit-receive module with a fully integrated differential RFMEMS antenna switch and a high-voltage generator for F-band radars;and 90nm SiGe bicmos analog front-end circuits for 80GHz bandwidth large-swing transmitters.

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2016 ieee bipolar/bicmos circuits and technology meeting

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ieee Transactions on Semiconductor Manufacturing 2016年第3期29卷 263-263页

Presents information on the 2016 ieee bipolar/bicmos circuits and technology meeting.

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Silicon Germanium Spins Cellular and Space Communication Networks

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ieee MICROWAVE MAGAZINE 2024年第10期25卷 54-67页

作者： Chevalier, Pascal Pallotta, Andrea STMicroelectronics F-38926 Crolles France STMicroelectronics I-20010 Cornaredo Milan Italy

Silicon germanium (SiGe) bicmos technology, often simply called SiGe, is used for high-performance SiGe heterojunction bipolar transistors (HBTs, versus Si bipolar junction transistors) and high-quality passive devices on a CMOS platform (see Figure 1 [1]). This combination offers better performance at lower cost than CMOS and III-V technologies and is able to address most demanding analog and RF applications, while benefiting from the advantages of SiGe HBTs and CMOS for digital functions [2].

关键词： Radio frequency Space communications Production CMOS technology bicmos integrated circuits Transceivers Silicon

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Asymmetric SiGe bicmos SPDT Switch With 210 fs RON x COFF for 5G Applications

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ieee MICROWAVE AND WIRELESS technology LETTERS 2025年第2期35卷 225-228页

作者： Hu, Kejie Ma, Kaixue Huang, Jiancheng Fu, Haipeng Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China Tianjin Univ Tianjin Key Lab Imaging & Sensing Microelect Techn Tianjin 300072 Peoples R China

This article presents a compact high-linearity single-pole double-throw (SPDT) switch built using a 0.13-mu mSiGe bicmos technology for Ka-band 5G. The body-floating technique (BFT) based on the deep-n-well (DNW) transistor is used in the asymmetric structure to decrease substrate leak-age and improve the power-handling capability in TX mode. Advanced performances have been achieved from the RF switch point of view with 210 fs R(ON)x C-OFF. The proposed design achieved a minimum insertion loss (IL) of 0.53/1.33 dB including pad losses, isolation of more than 21/15 dB, and IP1dBof 20/8.5 dBm in TX/RX mode. The measured IIP3 is 34.3/28 dBmat 28 GHz. The active chip area is 0.046 mm(2). In contrast to the conventional structure with heterojunction bipolar transistor (HBT) or PIN diodes in SiGe process, the proposed SPDT exhibits good performances with a compact area for modern asymmetric front-end applications.

关键词： Switches Silicon germanium Transistors Switching circuits bicmos integrated circuits 5G mobile communication Linearity Logic gates IP networks Loss measurement 5G asymmetric bicmos body-floating deep-n-well (DNW) single-pole double-throw (SPDT) switch

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Proceedings of the ieee bipolar/bicmos circuits and technology meeting

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technolo...

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2014 ieee bipolar/bicmos circuits and technology meeting, BCTM 2014

ISBN: (纸本)9781479972302

The proceedings contain 46 papers. The topics discussed include: a low-power SiGe feedback amplifier with over 110GHz bandwidth;an active frequency doubler with DC-100GHz range;a true-RMS integrated power sensor for on-chip calibration;microwave noise properties of heterojunction bipolar transistors;high-speed, waveguide Ge PIN photodiodes for a photonic bicmos process;an SiGe heterojunction bipolar transistor with very high open-base breakdown voltage;examination of horizontal current bipolar transistor (HCBT) reliability characteristics;degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions;device-to-circuit interactions in SiGe technology: challenges and opportunities;and a broad-band bicmos transmitter front-end for 27-36GHz phased array systems.

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Guest Editorial ieee 2022 bicmos and Compound Semiconductor Integrated circuits and technology Symposium

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ieee JOURNAL OF SOLID-STATE circuits 2023年第9期58卷 2405-2406页

作者： Greshishchev, Yuriy M. Ciena Corp Ottawa ON K2K 0L1 Canada

The Special Section of the ieee Journal of Solid-State circuits features expanded versions of selected articles presented at the 2022 bicmos and Compound Semiconductor Integrated circuits and technology Symposium (BCICTS) held in Phoenix, AZ, USA, on October 16–19, 2022. The first three invited papers demonstrate advances in indium phosphide (InP) heterojunction bipolar transistor (HBT) and SiGe bicmos clock generation circuits with the highest harmonics frequency 4 THz in silicon IC. Their techniques overcome the limitations of phase locked loop (PLL)-based circuits where output frequency is limited by the maximum oscillation frequency of a VCO. The fourth paper addresses best-in-class linearity along with power efficiency of a single-stage InP HBT power amplifier IC in 27 GHz–48 GHz frequency range employed by 5G wireless systems.

关键词： Special issues and sections meetings bicmos integrated circuits Solid state circuits

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A 94 GHz Bandwidth Transimpedance Amplifier in 55nm SiGe bicmos for High Speed Optical Receivers 24

A 94 GHz Bandwidth Transimpedance Amplifier in 55nm SiGe BiC...

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ieee 24th Topical meeting on Silicon Monolithic Integrated circuits in RF Systems (SiRF)

作者： Cuskelly, Lachlan Falt, Christopher Schvan, Peter Univ Calif Los Angeles Elect & Comp Engn Los Angeles CA 90095 USA Ciena Corp ASIC Design Ottawa ON Canada

ISBN: (纸本)9798350343304

A transimpedance amplifier with a bandwidth of 94 GHz is presented and on chip measurements are discussed. The measured gain of the amplifier at low frequencies is 55 dBO, peaking to 61 dBO at 78 GHz. The circuit was designed in a cutting edge 55nm SiGe bicmos technology, occupies a pad limited area of 0.02 mm2, and consumes 14 mA of current from a 3.3 V supply. The circuit achieves an average input referred current noise of 11 pA/v Hz, making it suitable for future high speed optical receivers.

关键词： broadband amplifiers heterojunction bipolar transistors MIMICs optical communication optical receivers

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165-220-GHz Broadband Amplifier With ±0.75-dB Gain Variation and Minimum Group Delay Variation in SiGe bicmos

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ieee MICROWAVE AND WIRELESS technology LETTERS 2025年第1期35卷 95-98页

作者： Chen, Xun Winkelhake, Jonas Wei, Muh-Dey Negra, Renato RWTH Aaachen Univ Chair High Frequency Elect D-52062 Aachen Germany

This letter presents a broadband amplifier with gain variation of less than +/- 0.75 dB and small group delay variation over the frequency band from 165 to 220 GHz. Different from the commonly used multiband matching approach, in this work a common broadband amplification stage is focused for the flexibility and scalability. In the common stage, broadband matching is obtained by manipulating the inband admittance, Y, to traverse the real axis of the Y-Smith chart, and offsetting the susceptance over frequency with a resonant circuit incorporating a shorted stub and the parasitic collector capacitance. Gain flatness of cascaded stages is enhanced by introducing mismatch in the common stage. The gain of an entire amplifier can be further increased by cascading stages without other efforts such as interstage matching, obtaining similar inband performance of gain and group delay variation. A prototype implemented in 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor (bicmos) cascades three stages to achieve a gain of 10 dB with low power consumption of 28 mW in measurements. To the best of the authors' knowledge, this amplifier achieves the smallest gain variation and group delay variation in G-band over a large bandwidth (BW).

关键词： Gain Broadband amplifiers Delays Admittance Silicon germanium Frequency measurement bicmos integrated circuits Transistors Wireless communication Semiconductor device measurement bipolar complementary metal-oxide-semiconductor (bicmos) broadband amplifier G-band gain flatness group delay millimeter-wave (mm-wave) monolithic microwave integrated circuit (MMIC) silicon-germanium (SiGe) wireless communication

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