The proceedings contain 288 papers. The topics discussed include: advances in gallium nitride-based electronics;infrared plasmonic thermal emitter and its application in biological system;semiconductor foundry partner...
详细信息
ISBN:
(纸本)1424406374
The proceedings contain 288 papers. The topics discussed include: advances in gallium nitride-based electronics;infrared plasmonic thermal emitter and its application in biological system;semiconductor foundry partnership;transport in carbon nanostructures;anything more than size in nanoelectronics;ultra high power light-emitting diodes with electroplating technology;technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devices;saturation effect of electroabsorption modulator on analog link gain and linearity;the current conduction issues in high-k gate dielectrics;thin gate oxide reliability study using nano-scaled stress;quantum transport devices application in multi-walled carbon-nano-tubes;and fabrication of silicon-on-insulator substrates using plasma technologies.
The proceedings contain 184 papers. The topics discussed include: implementing a successful business model for the IC design industry in China;novel device structures for sub-25nm generation;ultra-low voltage analog d...
详细信息
ISBN:
(纸本)0780393392
The proceedings contain 184 papers. The topics discussed include: implementing a successful business model for the IC design industry in China;novel device structures for sub-25nm generation;ultra-low voltage analog design techniques for nanoscale CMOS technologies;opportunities and challenges of emerging nanotechnologies for future high-speed and low power logic applications;orientation-dependent energy band structure calculation for silicon nanowires using supercell approach with the tight-binding method;effects of parasitic MOSFETs and traps on charge transport properties of germanium quantum dot single electron/hole transistors;technology platform based on comprehensive device modeling for RF SoC design;and modeling of low-frequency noise in junction field-effect transistor with self aligned planer technology.
The proceedings contain 114 papers. The topics discussed include: ultralow-voltage RAM technology - current status and future trends;nanoscale science and technology - a device and engineering perspective;biologically...
ISBN:
(纸本)0780377494
The proceedings contain 114 papers. The topics discussed include: ultralow-voltage RAM technology - current status and future trends;nanoscale science and technology - a device and engineering perspective;biologically inspired vision sensor for the detection of higher-level image features;soft computing tools for the simulation of efficient nanodevice models;modeling of optimized field emission nanotriodes with aligned carbon nanotubes of variable heights;cast nanowires and nanowire-based filamentary nanostructures;trends in high-density flash memory technologies;an highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks;a new multi-port memorizer with global share and feebleness conflict access;and electrical characteristics of barium-strontium titanate thin-film capacitor.
The proceedings contain 117 papers. The topics discussed include: an oscillator-based CMOS magneto-sensitive biosensor with a low noise and low temperature coefficient LDO regulator;an optimized design of reversible m...
ISBN:
(纸本)9781509018307
The proceedings contain 117 papers. The topics discussed include: an oscillator-based CMOS magneto-sensitive biosensor with a low noise and low temperature coefficient LDO regulator;an optimized design of reversible magnitude and signed comparators;modeling of source/drain access resistances and their temperature dependence in GaN HEMTs;design of an optimized CMOS series-parallel coupled LC quadrature phase oscillator;and a vision chip architecture for image recognition based on improved concvolutional neural networks.
The proceedings contain 223 papers. The topics discussed include: a simulation-based performance evaluation of anti-collision protocols for RFID system;a patch antenna array for 60-GHz WP AN based on polypropylene com...
ISBN:
(纸本)9781479923342
The proceedings contain 223 papers. The topics discussed include: a simulation-based performance evaluation of anti-collision protocols for RFID system;a patch antenna array for 60-GHz WP AN based on polypropylene composite substrate;a novel loss evaluation method for differential transmission lines;unusual latch-up phenomenon and a novel solution without an additional cost;effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices;impact of gate shapes on single event transients;a high performance solid-state storage system for high speed data acquisition applications;a novel switched-OTA utilizing slew-rate boosting for sigma-delta modulators;and extrapolation of lifetime of high power LEDs under temperature-humidity conditions.
The proceedings contain 210 papers. The topics discussed include: A comprehensive physics-based, measurement-driven random telegraph signals (RTS) model for MOS system;interface engineering to enhance phase change mem...
ISBN:
(纸本)9781479983636
The proceedings contain 210 papers. The topics discussed include: A comprehensive physics-based, measurement-driven random telegraph signals (RTS) model for MOS system;interface engineering to enhance phase change memory programmability;ultra-low power green electronic devices;counteracting differential power analysis: hiding encrypted data from circuit cells;progress on heterogeneous integration: devices and processes;metal-oxide based solar cells;run-time performance adaptation: opportunities and challenges;multi-finger schottky-barrier tunneling FET with hybrid operation mechanism for steep transition and high on current;consistent simulation of dynamic carrier trap/detrap effects on circuit performance;and process integration challenges for sub-10 nm technology nodes and the prospect of sequential 3d integration.
The proceedings contain 124 papers. The topics discussed include: a high performance encryption system based on AES algorithm with novel hardware implementation;an energy-efficient FPGA-based embedded system for CNN a...
ISBN:
(纸本)9781538662342
The proceedings contain 124 papers. The topics discussed include: a high performance encryption system based on AES algorithm with novel hardware implementation;an energy-efficient FPGA-based embedded system for CNN application;back-propagation neural network based on analog memristive synapse;low voltage dual-modulus frequency divider based on extended true single-phase clock logic;a novel comparator offset calibration technique for SAR ADCs;multi-model fusion harvested energy prediction method for energy harvesting WSN node;vertical channel ITO-stabilized ZnO thin-film transistors;and T-chip, electrochemical biosensor platform based on the electron tunneling: role and effect of the back-filling material.
The proceedings contain 305 papers. The topics discussed include: a novel high-k LDMOS with triangular trench field plate;improving performance of pentacene field-effect transistors by optimizing substrate temperature...
ISBN:
(纸本)9781728102863
The proceedings contain 305 papers. The topics discussed include: a novel high-k LDMOS with triangular trench field plate;improving performance of pentacene field-effect transistors by optimizing substrate temperature and active layer thickness;a low latency decoding algorithm for grouping variable nodes on TLC NAND flash devices;operation mechanisms of the tunneling contact thin film transistor;investigation of electrical performance and reliability of memristors by tuning compliance current during electroforming process;a gain - bandwidth reprogrammable neural recording amplifier with leakage reduction switches;effect of encapsulation on the resistive switching characteristics of gama-aminopropyltriethoxysilane layer;and a high accuracy and wide input voltage range current sensor with adaptive amplification and temperature compensation.
The proceedings contain 122 papers. The topics discussed include: study of microscopic defects in silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition process;two-stage Miller-compensated amp...
ISBN:
(纸本)9781424425402
The proceedings contain 122 papers. The topics discussed include: study of microscopic defects in silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition process;two-stage Miller-compensated amplifier with embedded negative current buffer;power efficient charge pump circuit standard twin-well CMOS technology;a numerical simulation study of a nanoscale side selective buried oxide MOSFET;low-leakage and low-power implementation of high-speed 65nm logic gates;multifractal behavior of the power dissipation of CMOS circuits;high thermal stability of AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology;investigation of problems in JEDEC HBM ESD test standard;structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology;and high critical electric field of thin silicon film and its realization in SOI high voltage devices.
The proceedings contain 168 papers. The topics discussed include: vertical integration of light-emitting diode chips;compact modeling of interconnect reliability;a two-dimensional short-channel model for threshold vol...
ISBN:
(纸本)9781457719974
The proceedings contain 168 papers. The topics discussed include: vertical integration of light-emitting diode chips;compact modeling of interconnect reliability;a two-dimensional short-channel model for threshold voltage of tri-gate (TG) MOSFETs with localized trapped charges;ESD-aware circuit design in CMOS integrated circuits to meet system-level ESD specification in microelectronic systems;nanoscale silicon ion-sensitive field-effect transistors for ph sensor and biosensor applications;the effect of bandgap engineering on IC-VBE fly-back characteristic of power SiGe heterojunction bipolar transistor;adjustable gamma correction reference voltage source for LCoS;a novel surface potential-based mobility degradation model of thin-oxide-MOSFET for circuit simulation;a compact threshold voltage model for the novel high-speed semiconductor device IMOS;and design and fabrication of TaN bottom electrode thermal sensing resistor for MEMs based bolometer application.
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