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ieee electron DEVICE LETTERS 2024年第2期45卷 164-167页

作者： Pan, Chuanqi Yu, Xinxin Li, Fan Gong, Hehe Wang, Denggui Zhou, Jianjun Li, Zhonghui Liu, Wen Chen, Dunjun Gu, Shulin Zheng, Youdou Zhang, Rong Ye, Jiandong Nanjing Elect Devices Inst Nanjing 210016 Peoples R China CETC Key Lab Carbon Based Elect Nanjing 210016 Peoples R China Natl Key Lab Solid State Microwave Devices & Circu Nanjing 210016 Peoples R China Nanjing Univ Sch Elect Sci & Engn Nanjing 210023 Peoples R China Xian Jiaotong Liverpool Univ Sch Adv Technol Suzhou 215123 Peoples R China

High-performance GaN based one-chip direct coupled field-effect-transistor logic (DCFL) circuits were demonstrated, in which enhancement-mode (E-mode) GaN high electron mobility transistors (HEMTs) were formed simultaneously with depletion-mode (D-mode) components through the selective-area growth of p-NiO gates at room temperature by sputtering. The process boasts advantages such as a low thermal budget cost, eliminating the need for high-temperature regrowth of p-GaN, and preventing dry-etch damage. The E-mode HEMT showcases a high current density of 1.3 A/mm, a positive threshold voltage of 0.83 V, and an ON-OFF current ratio of 7.24x108,which enable input/output logic level matching with a low drive/load ratio of 1.0. The E/D-mode inverter exhibits substantial logic-low and logic-high noise margins of 2.09 V and 2.45 V, respectively, a logic voltage swing of 4.78 V,a switching threshold of 2.45 V and a voltage gain of 42 at asupply voltage of 5.0 V. With the demonstrated capability to drive power switches, this architecture provides an elegant solution for high-frequency power switching applications.

关键词： Logic gates MODFETs HEMTs Wide band gap semiconductors Aluminum gallium nitride Inverters Threshold voltage GaN HEMT p-NiO E-mode E/D integrated circuits power ICs

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Diamond-based plasmonic terahertz devices 16

Diamond-based plasmonic terahertz devices

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16th ieee Dallas circuits and Systems conference (DCAS)

作者： Hasan, Muhammad Mahmudul Zhang, Yuhiu Pala, Nezih Shur, Michael Florida Int Univ Dept Elect & Comp Engn Miami FL 33199 USA Rensselaer Polytech Inst Dept Elect Comp & Syst Engn Troy NY USA

ISBN: (纸本)9798350399189

p-diamond is a strong contender for sub-THz and THz applications specifically due to its large hole effective mass, high optical phonon energy, and, therefore, high momentum relaxation time, and high mobility. It has the potential for efficient operation in the 300 GHz band targeted for future 6G communications. We review some of the recent works on p-diamond TeraFETs demonstrating their potential to detect and transmit sub-THz and THz radiation. We also report on the potential of n-diamond TeraFETs or emerging terahertz applications. One of the main factors in our research that account for the plasma wave dampness of the electron stream is the viscosity of the charge carrier medium in the channel.

关键词： TeraFET Terahertz detection Diamond viscosity

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A ΣΔ-Modulated Linear-in-dB Attenuator for On-Chip Power Detection with 0.12 dB Resolution in RF SOI CMOS Switch Technology

A ΣΔ-Modulated Linear-in-dB Attenuator for On-Chip Power D...

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ieee Radio Frequency Integrated circuits Symposium (RFIC)

作者： Hsu, Ting-Li Solomko, Valentyn Hagelauer, Amelie Tech Univ Munich Chair Micro & Nanosyst Technol Munich Germany Infineon Technol AG Neubiberg Germany Fraunhofer EMFT Inst Elect Microsyst & Solid Stat Munich Germany

ISBN: (纸本)9798350359480;9798350359473

In this work, an innovative scheme to boost the resolution of the variable radio-frequency (RF) attenuator is proposed and examined. The attenuator stage modulated by a first-order sigma-delta modulator (S.M) shows a linear-in-dB attenuation profile for the average RF power with high resolution. The proposed attenuator provides a low-power solution for accurate on-chip power measurement with zero quiescent current. The implemented attenuator shows an effective attenuation tuning step size of 0.12 dB from 700MHz to 6 GHz with a power consumption of only 41.4 mu W. The device is designed and fabricated in 90nm RF SOI CMOS switch technology.

关键词： attenuator CMOS attenuator sub 6 GHz variable attenuator

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A Cryptographic Security Engine With Sequence Tracker for Implantable Neural Stimulation devices

A Cryptographic Security Engine With Sequence Tracker for Im...

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2024 Biomedical circuits and Systems conference

作者： Garg, Aksh Amritkar, Tejas Vijayakumaran, Saravanan Somappa, Laxmeesha Indian Inst Technol Dept Elect Engn Mumbai Maharashtra India IIT Bombay Ctr Semicond Technol SEMIX Bombay Maharashtra India

ISBN: (纸本)9798350354966;9798350354959

Neural stimulation devices have shown a significant impact on the treatment of neurological disorders such as Parkinson's disease, epilepsy, and chronic pain. Maintaining secure communication with these devices is essential to keep the confidentiality and integrity of the patient's data and the authenticity of the transmitter. The proposed work provides a framework for a power-aware security engine for such implantable devices by incorporating a cryptographic security engine to ensure the message's confidentiality, integrity, and authenticity. While prior works focus on confidentiality, the proposed engine involves the use of AES-128 decryption and a sequence tracker to ensure confidentiality, integrity, and authenticity by disabling malicious repeat attacks to realize secure implantable neural stimulators. The security engine is tested and functionally verified on an FPGA and implemented in a CMOS 65nm process, resulting in a 0.09 mm(2) area and 45 mu W power consumption.

关键词： AES authentication confidentiality deep brain stimulation (DBS) integrity MAC pseudo-random sequence generator security engine

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GaN HEMT Non Linear Model for RF Switch Applications 7

GaN HEMT Non Linear Model for RF Switch Applications

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7th International conference on devices, circuits and Systems (ICDCS)

作者： Bansal, Kirti Chander, Subhash Solid State Phys Lab SSPL Delhi India

ISBN: (纸本)9798350350470;9798350350487

In this paper indigenous X band large-signal model of RF switch is demonstrated. The switch model was developed using measurement data of fabricated devices. These devices are based upon 0.25 mu m Gallium Nitride HEMT technology on 100 mu m SiC substrate. First, the linear model is generated which is based on the extrinsic and intrinsic parameters. The non linear Angelov model is used to model the electrical (I-V) behavior of device. The non-linear capacitance model is used to evaluate the isolation variation in OFF state. Indigenous large-signal model of GaN HEMT based RF switch have been integrated in to PDK (Process Design Kit). It will be used for RF switch applications.

关键词： Advance Design System linear/Non-linear model GaN HEMT S-parameters Small signal Large signal

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Comparative Study of Millimeter-Wave Avalanche Noise Diodes in Different Si Technologies 19

Comparative Study of Millimeter-Wave Avalanche Noise Diodes ...

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19th European Microwave Integrated circuits conference (EuMIC)

作者： An, Samuel Nguyen Dinh Schiavolini, Giacomo Simoncini, Guendalina Orecchini, Giulia Goncalves, Joao Azevedo Goncalves, Cybelle Belem Alimenti, Federico STMicroelectronics Grenoble France Univ Perugia Dept Engn Perugia Italy Picosats Trieste Italy

ISBN: (纸本)9798350385120;9782874870781

solid-state noise sources are essential components in highly reliable mm-wave systems for life- or mission-critical applications such as self-driving car radars, airborne and satellite communication systems, space science instruments, and 6G to THz communications. Integrating a noise source, typically based on the avalanche effect of diode junctions, allows for testing of the architecture during production and operational lifetime. This paper presents a comparative study of three avalanche noise diodes integrated in different silicon technologies. The study is based on a solid experimental work that highlights the key points for a successful device design aimed at increasing the generated noise power, bandwidth, and operating frequency.

关键词： On-chip noise measurements avalanche noise diodes millimeter-wave circuits CMOS SiGe BiCMOS

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A Multi-Channel 100-dB DRPPG/ECG SoC for Smart Wearable devices

A Multi-Channel 100-dB DRPPG/ECG SoC for Smart Wearable Devi...

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2024 Biomedical circuits and Systems conference

作者： Zhou, Shihong Wang, Xin Suo, Yanxing Han, Xiao Wang, Guoxing Zhao, Yang Shanghai Jiao Tong Univ Dept Micronano Elect Shanghai Peoples R China Natl Key Lab Adv Micro & Nano Manufacture Technol Shanghai Peoples R China

ISBN: (纸本)9798350354966;9798350354959

Real-time monitoring of vital signs in wearable devices focuses on accurate photoplethysmogram (PPG) and electrocardiogram (ECG) recording. Motion artifacts, ambient light interference and sensor-skin contact variability affect signal quality significantly, demanding a multi-channel sensor interface chip with a high dynamic range and energy efficiency. A PPG/ECG SoC is proposed for robust signal optimization. Time-division multiplexing, ambient double sampling and DC current compensation together enhance the dynamic range. Fabricated in 0.18 mu m CMOS technology, the chip features a 5.63-pArms direct digitized input-referred noise for PPG readout and 365-nVrms for ECG. A cross-scale dynamic range of 133dB is achieved, providing saturation-free usage for sport wearable devices such as smart rings.

关键词： Multi-channel dynamic range wearable devices photoplethysmogrffin electrocardiogram

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Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode circuits 53

Bias Spectroscopy of Negative Differential Resistance in Ge ...

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ieee 53rd European solid-state Device Research conference (ESSDERC)

作者： Behrle, Raphael den Hertog, Martien I. Lugstein, Alois Weber, Walter M. Sistani, Masiar TU Wien Inst Solid State Elect Vienna Austria CNRS Inst Neel UPR2940 Grenoble France

ISBN: (纸本)9798350304237

In this paper, we exploit the nanometer scale properties of Ge based Schottky barrier field-effect transistors (SBFETs) with monocrystalline Al contacts, fusing the concept of reconfiguration and negative differential resistance (NDR) in a single device. Temperature dependent bias spectroscopy is used to investigate the electronic transport in the NDR regime leading to profound understanding of the involved physical transport mechanisms. Importantly, the obtained SBFETs are capable of shifting the NDR-peak by electrostatic gating. Thus, a cascode of such devices results in overlapping NDR regions, which allows the realization of new circuit topologies beyond the capabilities of conventional CMOS.

关键词： Germanium Metal-Semiconductor Heterostructure Reconfigurable Transistor Negative Differential Resistance

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Live Demonstration: A Smart Ring for OSAHS Detection Based on Photoplethysmography

Live Demonstration: A Smart Ring for OSAHS Detection Based o...

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2024 Biomedical circuits and Systems conference

作者： Li, Zhizhang Liu, Bin Guo, Hongbo Wu, Hao Chen, Cheng Wang, Guoxing Shanghai Jiao Tong Univ Dept Micro Nano Elect Shanghai 200240 Peoples R China Shenzhen Ninenovo Technol Ltd Shenzhen 528400 Peoples R China

ISBN: (纸本)9798350354966;9798350354959

This demonstration presents a smart ring for obstructive sleep apnea-hypopnea syndrome (OSAHS) detection based on photoplethysmography (PPG), which integrates a PPG front-end circuit. Compared to the traditional polysomnography (PSG) method, the smart ring offers a more convenient, more portable and less invasive alternative. With the smart ring, users can directly view their overnight OSAHS events and apneahypopnea index (AHI) in the RingConn APP.

关键词： obstructive sleep apnea-hypopnea syndrome photoplethysmography smart ring wearable devices

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All solid-state Transmitter (ASTRAM) for Next-Generation Ground-Based Planetary Radar

All Solid-State Transmitter (ASTRAM) for Next-Generation Gro...

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ieee Aerospace conference

作者： Taylor, Mark Escobar, Uriel Klaib, Andy Rahimizadeh, Sushians Montanez, Steven Ledezma, Luis Yi, Lin CALTECH Jet Prop Lab 4800 Oak Grove Dr Pasadena CA 91109 USA

ISBN: (纸本)9798350304626

This paper presents the development of a new type of transmitter for next-generation ground-based planetary radar. The transmitter is based on mature, reliable solid-state technology, and provides an alternative to traditional amplifier tube-based transmitter systems. The technology described is a scalable transmitter system that utilizes a low-loss method of power combining the RF outputs of multiple Gallium Nitride (GaN)-based Monolithic Microwave Integrated circuits (MMICs) in parallel to achieve a coherent amplified output signal. The power combining takes place within modular devices that we refer to as spatial power combining amplifiers (SPCAs). The SPCA discussed in this paper combines an arrangement of sixteen 85 W MMIC amplifiers to produce +/- 1.3 kW continuous-wave power at a center frequency of 8.56 GHz. The modular nature of the SPCA units allows them to be further combined hierarchically via waveguide-combining techniques to form scalable highpower transmitter systems. This paper presents the basic architecture and full laboratory characterization of an Xband solid-state SPCA unit, including key device performance results, reliability analysis, and environmental sensitivities.

关键词： Monolithic microwave integrated circuits

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