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检索条件"任意字段=IEEE Conference on Electron Devices and Solid-State Circuits"

共 16633 条记录，以下是131-140 订阅

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X-band Monolithic GaN HEMT LNA based on Indigenous Process 8

X-band Monolithic GaN HEMT LNA based on Indigenous Process

引用

8th electron devices Technology & Manufacturing conference (EDTM)

作者： Sinha, Pritam Kumar Goyal, Umakunt Mishra, Meena Solid State Phys Lab Delhi India

ISBN: (纸本)9798350383089;9798350371529

The Aim of this work is to design & develop a X-Band Low Noise amplifier MMIC based on our AlGaN/GaN 0.25 mu m HEMT Indigenous process. A two stage LNA have been demonstrated with common source (CS) with inductive source degeneration Topology. In the frequency band (9.0 GHz - 10.0 GHz) LNA features 11.4 +/- 0.3dB linear gain with a noise figure of around 2.1 dB. Input return loss is better than 8 dB & output return loss is better than 10 dB for 15V drain voltage & 150mA/mm drain current.

关键词： GaN MMIC flat gain HEMT (Low Noise Amplifier) LNA

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A 32.3dBm Quadrature Complex Domain Doherty Power Amplifier Based on Switched Constant-Current and Symmetrical Transformer Achieving 21.6% Average Power-Added Efficiency

A 32.3dBm Quadrature Complex Domain Doherty Power Amplifier ...

引用

ieee Radio Frequency Integrated circuits Symposium (RFIC)

作者： Wang, Tao Shi, Lingyun Hua, Di Cao, Peng Xu, Jiawei Hong, Zhiliang Fudan Univ State Key Lab Integrated Chips & Syst Shanghai Peoples R China

ISBN: (纸本)9798350359480;9798350359473

This paper presents a power-efficient quadrature switched constant-current power amplifier (PA) based on IQ sharing. This PA, combining the complex domain Doherty and a symmetrical transformer that absorbs a lambda/4 impedance converter, can generate four power efficiency peaks to significantly improve the power-added efficiency (PAE) at the PA's power back-offs (PBOs). Fabricated in a 28 nm CMOS process, the PA achieves a peak output power (P-out) of 32.3 dBm and a peak PAE of 37% at a 2 GHz carrier. The PAEs at 3-, 6-, and 9-dB PBOs are 35.7%, 25.1%, and 23.7%, respectively. When testing an LTE 20-MHz 256-QAM signal with 5.8-dB PAPR, this PA achieves an average P-out of 26.5 dBm, an average PAE of 21.6%, -31.2 dB EVM, and -32.5/-32.3 dBc ACLR.

关键词： Power amplifiers (PAs) switched constant-current complex domain Doherty symmetrical transformer impedance converter power back-off PBO efficiency peak

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Investigation of resistive switching in ink-jet printed zinc doped indium oxide-based devices 8

Investigation of resistive switching in ink-jet printed zinc...

引用

8th electron devices Technology & Manufacturing conference (EDTM)

作者： Singh, Manvendra Hadhi, Mohammed Dasgupta, Subho IISc Bangalore Mat Engn Bangalore Karnataka India

ISBN: (纸本)9798350383089;9798350371529

Printed electronics is rapidly maturing to address wide application domains including smart sensors, displays, wearables, and bio-medical patches. A printed storage unit can enable the fabrication of complex printed circuits, such as RFIDs. In this study, we investigate the resistive switching in ink-jet printed ITO/a-IZO/Ag two terminal device. Here, we find that alongside space charge limited conduction (SCLC), the oxygen vacancy assisted trap states at the a-IZO/Ag interface controls the switching behaviour of the printed devices. The devices exhibit the 2 order of magnitude difference between the high and low conduction states. Furthermore, we demonstrate 9 cycles of bipolar switching at less than 2 V and retention of the high resistance state (HRS) and low resistance state (LRS) at 50 mV for 1000 s.

关键词： Printed electronics ink-jet printing resistive switching amorphous indium-zinc oxide (a-IZO)

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A 110-to-170-GHz OOK Transmitter with 40-Gb/s Data Rate and 40-dB On-Off Ratio in 28-nm CMOS

A 110-to-170-GHz OOK Transmitter with 40-Gb/s Data Rate and ...

引用

ieee Radio Frequency Integrated circuits Symposium (RFIC)

作者： Yang, Chun Tang, Dawei Zhou, Peigen Chen, Zhe Chen, Jixin Hong, Wei Southeast Univ State Key Lab Millimeter Waves Nanjing Peoples R China

ISBN: (纸本)9798350359480;9798350359473

This paper presents a D-band on-off keying (OOK) transmitter fabricated in 28-nm CMOS process. A current-controlled OOK modulator with always-off cancellation technique is proposed to enhance the data rate and the on-off ratio. The transmitter exhibits an output power exceeding 10 dBm and an on-off ratio of 40 dB. Its 3-dB output power bandwidth is from 110 to 170 GHz, covering the full D band to support a high data rate. Without the assistance of DSP for equalization, the measurements demonstrate an on-wafer data rate up to 40 Gb/s and over-the-air (OTA) data rates of 21 Gb/s and 15 Gb/s at distances of 3 cm and 8 cm respectively with a bit error rate (BER) of less than 10(-12).

关键词： CMOS D-band on-off keying (OOK) transmitter over-the-air (OTA) communication high data rate high on-off ratio

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A D-band Bi-directional Current-Reuse Common-Gate Amplifier in 45nm RFSOI

A D-band Bi-directional Current-Reuse Common-Gate Amplifier ...

引用

ieee Radio Frequency Integrated circuits Symposium (RFIC)

作者： Uddin, Syed Mohammad Ashab Zhong, Liwen Lee, Wooram Penn State Univ University Pk PA 16802 USA

ISBN: (纸本)9798350359480;9798350359473

This paper presents a low-power 140-GHz bi-directional amplifier exploiting the source-drain symmetry of CMOS transistors in a common-gate amplifier. The proposed bi-directional amplifier uses symmetric inter-stage matching networks to minimize the use of lossy switches on RF signal paths. The current-reuse technique is applied to share the same supply current between two adjacent stages for low power consumption. As a proof-of-concept implementation, a prototype 140-GHz 3-stage bi-directional amplifier is implemented using a 45nm RFSOI process. The fabricated chip reports a measured peak gain of 14 dB with a 3-dB bandwidth of 21 GHz and only consumes 28.5 mW of DC power. The measured input return loss is higher than 10 dB over a bandwidth > 46 GHz, and the measured average noise figure (NF) over the 3 dB bandwidth is 6.8 dB.

关键词： bi-directional D-band mm-wave amplifier low-noise amplifier phased array

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Scalable GaN-HEMT Model for X-band RF Applications 8

Scalable GaN-HEMT Model for X-band RF Applications

引用

8th electron devices Technology & Manufacturing conference (EDTM)

作者： Pal, Praveen Dangi, Raghvendra Nazir, Mohammad Sajid Kumari, Purnima Goyal, Umakant Kumar, Sudhir Singh, Poonam Mishra, Meena Chauhan, Yogesh Singh Indian Inst Technol Dept Elect Engn Kanpur Uttar Pradesh India Def Res & Dev Org DRDO Solid State Res Lab SSPL Delhi India

ISBN: (纸本)9798350383089;9798350371529

The cutoff voltage (V OFF) of a HEMT is an important parameter that affects its performance, and it can indeed change with self-heating. In this work, we study the effect of geometrical features of GaN high electron mobility transistor (HEMT) device on cutoff voltage and self-heating. ASM-HEMT framework is used and improved to account for the geometrical dependencies. The model is validated with DC-IV and RF characteristics upto 20 GHz for three SSPL developed GaN HEMT devices with distinct gate periphery ((W x NF) - 75x4 mu m, 75x6 mu m and 100x8 mu m). The measured data and the modeled outcomes are in good agreement. It has been observed that the self heating and cutoff voltage shows the linear dependency on the device size (W x NF).

关键词： Advanced Spice Model (ASM) High electron Mobility Transistor (HEMT) S-parameter Loadpull Self-heating

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Compressed Sensing Spiking Neural Network for Sparse Signal Classification

Compressed Sensing Spiking Neural Network for Sparse Signal ...

引用

2024 Biomedical circuits and Systems conference

作者： Qian, Liyu Zhu, Zikai Lu, Jie Sun, Yaojie Zheng, Lirong Zou, Zhuo Fudan Univ Sch Informat Sci & Technol State Key Lab Integrated Chips & Syst Shanghai Peoples R China

ISBN: (纸本)9798350354966;9798350354959

The spiking neuromorphic processors designed specifically for brain-inspired spiking neural networks (SNNs) are in increasing demand with the advantages of energy efficiency. Due to the limitation of on-chip resources of edge devices, large-scale input signals are typically downscaled before being processed on SNN processors. In this work, we propose the compressed sensing spiking neural network (CSSNN) method for sparse signals, which combines the compressed sensing (CS) process with the SNN classifier. This method achieves an end-to-end structure for data compression and SNN classification. As a result, the overall computation complexity is largely compressed with minimal classification accuracy loss. The input data size of the MNIST dataset is compressed to 256 and that of the N-MNIST and DVS Gesture datasets is 512. The total number of operations (OPs) of the network decreases by 65.24%, 72.52%, and 81.11%. The model size is compressed by 63.35%, 62.02%, and 62.75% respectively, without accuracy loss compared with the baseline.

关键词： spiking neural network (SNN) edge device sparse signal compressed sensing end-to-end

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A Fully Integrated Three-Channel Cryogenic Microwave SoC for Qubit state Control in ⁹Be⁺ Trapped-Ion Quantum Computer operating at 4 K

A Fully Integrated Three-Channel Cryogenic Microwave SoC for...

引用

ieee Radio Frequency Integrated circuits Symposium (RFIC)

作者： Toth, P. Eugine, P. S. Meyer, A. Yamashita, K. Halamas, S. Duwe, M. Ishikuro, H. Ospelkaus, C. Issakov, V Tech Univ Carolo Wilhelmina Braunschweig Inst CMOS Braunschweig Germany Keio Univ Ishikuro Lab Tokyo Japan Leibniz Univ Hannover Inst Quantum Opt Hannover Germany

ISBN: (纸本)9798350359480;9798350359473

This paper presents a fully integrated System-on-Chip operating from 295 K down to 4 K, capable of generating 0.7 GHz to 1.5 GHz microwave signals for 9Be+ trapped-ion quantum computer realizations. The proposed design comprises a three-channel waveform generator with integrated 48 kbit memory to generate arbitrary envelope-modulated control signals while consuming only 94 mW, which in the targeted system results in 1.9 mW/qubit. The IC is capable of driving multiple electrodes as required for all gate operations. The chip was fabricated in a 0.13 mu m SiGe BiCMOS technology. To the best of the authors' knowledge, this is the first reported integrated SoC solution for qubit state control in a trapped-ion quantum computer.

关键词： Microwave integrated circuits Trapped ion Scalability Qubit power amplifiers Cryogenic electronics

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Compressed Plane-Wave Compounding for Efficient Imaging on Portable Ultrasound devices

Compressed Plane-Wave Compounding for Efficient Imaging on P...

引用

2024 Biomedical circuits and Systems conference

作者： Trivedil, Deepanshu Huang, Junjun Madanayake, Arjuna Bhunia, Swamp Mandal, Soumyajit Florida Int Univ Elect & Comp Engn Miami FL 33174 USA Univ Florida Elect & Comp Engn Gainesville FL 32611 USA SUNY Stony Brook Elect & Comp Engn Stony Brook NY 11794 USA

ISBN: (纸本)9798350354966;9798350354959

Sub-Nyquist sampling, also known as compressive sensing (CS), leverages the sparsity of ultrasound signals to reduce the sampling rate required for accurate ultrasound image reconstruction. Such under-sampling can reduce the computational complexity of the reconstruction algorithm while also relaxing on-board memory requirements. This paper demonstrates up to 10x reduction in total sample count by applying CS algorithms to ultrasound imaging using coherent plane-wave compounding (CPWC), and up to 57x reduction for single plane waves by combining CS with convolution beamforming. The resulting compression facilitates processing of the acquired samples directly on portable ultrasound devices, thus eliminating the need to transmit the data to a remote cloud for processing. The proposed compressed CPWC imaging approach is suitable for efficient target localization during focused ultrasound (FUS) neuromodulation. A portable ultrasound system for FUS neuromodulation, based on a system-on-chip (SoC) module and equipped with a dual-mode wearable probe, is also presented.

关键词： compressive sensing sub-Nyquist ultrasound imaging beamforming CPWC portable ultrasound

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A X4 Multiplier MMIC to E-Band Frequencies with High Spectral Purity in 50 nm mHEMT Technology 18

A X4 Multiplier MMIC to E-Band Frequencies with High Spectra...

引用

18th European Microwave Integrated circuits conference (EuMIC)

作者： Weber, Rainer Wagner, Sandrine Leuther, Arnulf Mikulla, Michael Fraunhofer Inst Appl Solid State Phys IAF Freiburg Germany

ISBN: (纸本)9782874870736

This paper presents a X4 frequency multiplier MMIC realized in the IAF 50 nm mHEMT technology. It consists of two cascaded frequency doublers followed by an amplifier and was designed for an output frequency range from 70 to 82.5 GHz. This corresponds to a bandwidth of 12.5 GHz or 16.4 %. The MMIC achieves a relatively flat output power of 9.5 dBm with a variation of only +/- 0.4 dB. The unwanted harmonics were suppressed in the output spectrum by more than 52 dBc.

关键词： frequency multiplier X4 multiplier spectral purity E-Band (60 to 90 GHz) metamorphic high electron mobility (mHEMT) monolithic millimeter-wave integrated circuit (MMIC)

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