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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Maher, Olivier Horst, Folkert Sabo, Filip Du Fancheng Bragaglia, Valeria Karg, Siegfried Sousa, Marilyne Todri-Sanial, Aida Offrein, Bert Jan IBM Res Europe Zurich Saumerstr 4 CH-8803 Ruschlikon Switzerland IBM Res Europe Zurich Saumerstr 4 CH-8803 Zurich Switzerland Eindhoven Univ Technol Elect Eng Dept NL-5612 AZ Eindhoven Netherlands

ISBN: (纸本)9798350388138;9798350388145

This study focuses on exploiting phase-transition properties in VO2 to develop a brain-inspired FitzHugh-Nagumo neuron. A key feature of our implementation is achieved through a self-coupling synapse that creates a neuron capable of generating complex firing patterns, such as mixed-mode oscillations. These oscillations hold promise for solving time-dependent computing problems. We study the advantages of coupling FitzHugh-Nagumo oscillators in terms of stability and circuit simplicity compared to Kuramoto-based relaxation oscillators. We show how they can excel in solving computational tasks, specifically in pattern recognition applications.

关键词： Neurons

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A Cryogenic Digital-to-Analog Converter for Trapped-Ion Quantum Computing 50

A Cryogenic Digital-to-Analog Converter for Trapped-Ion Quan...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Sieberer, Michael Infineon Technol Austria AG Villach Austria

ISBN: (纸本)9798350388138;9798350388145

This work presents a Delta Sigma-modulated switched-capacitor Digital-to-Analog Converter (DAC) in a 130 nm BCD technology that generates precise control voltages for ion traps at very low temperatures down to 13 K. The architecture serves the needs of future trapped-ion quantum computers, which could integrate many such DACs to move ions during quantum gate operations. An offset-cancellation scheme removes the need for per-channel calibration. The low power consumption of 1.5 mW avoids excessive self-heating. To my knowledge, this is the first demonstration of a Delta Sigma DAC operating at these low temperatures.

关键词： cryogenic electronics delta-sigma switched-capacitor circuits ion traps quantum computing

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Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology 50

Compact frequency multiplexed readout of silicon quantum dot...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Schmidt, Quentin Jadot, Baptiste Martinez, Brian Houriez, Thomas Morel, Adrien Meunier, Tristan Pillonnet, Gael Billiot, Gerard Jansen, Aloysius Jehl, Xavier Thonnart, Yvain Badets, Franck Univ Grenoble Alpes Leti CEA Grenoble France Univ Grenoble Alpes Pheliqs IRIG CEA Grenoble France Univ Grenoble Alpes Inst Neel CNRS Grenoble France Quobly Grenoble France Univ Grenoble Alpes List CEA F-38000 Grenoble France Univ Savoie Mt Blanc SYMME F-74000 Annecy France

ISBN: (纸本)9798350388138;9798350388145

This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2 mu s, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers.

关键词： cryo-CMOS spin qubits semiconductor qubits quantum-classical TIA transimpedance amplifier single electron transistors

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Understanding the Electrical Impact of DTI Induced Dislocations on Smart Power devices 50

Understanding the Electrical Impact of DTI Induced Dislocati...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Basso, Michele Riccardi, Damiano Colombo, Selene Roffarello, Pierpaolo Monge Frascaroli, Jacopo Mica, Isabella STMicroelectronics Agrate Brianza MI Italy

ISBN: (纸本)9798350388138;9798350388145

This work presents a detailed analysis of the electrical effect of silicon dislocations generated from the Deep Trench Isolation (DTI) module on a HV power MOSFET integrated in a proprietary 0.13 mu m BCD platform. The impact of such defects on yield is strongly dependent on device architecture and doping, therefore resulting in extremely different failure rates for n-channel and p-channel devices. The explanation lies in the interaction between the dislocation and the n+ buried layer, resulting in an alteration of the Reduced Surface Field (ReSurF) effect on the device, and thus reducing its voltage capability. This is proven both by TCAD and by dedicated drain implant engineering trials. Moreover, the electrical measurement of a dislocation-based FET, embedded within the power device, is shown, and discussed.

关键词： BCD Deep Trench Isolation Dislocation DTI power MOSFET Reduced Surface Field ReSurF Silicon Defects

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Compact Model of Conductive-Metal-Oxide/HfOx Analog Filamentary ReRAM devices 50

Compact Model of Conductive-Metal-Oxide/HfOx Analog Filament...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Galetta, Matteo Falcone, Donato Francesco Menzel, Stephan La Porta, Antonio Steccolini, Tommaso Choi, Wooseok Offrein, Bert Jan Bragaglia, Valeria IBM Res Europe Zurich Zurich Switzerland Politecn Torino Turin Italy PGI 7 Forschungszentrum Julich Germany

ISBN: (纸本)9798350388138;9798350388145

We pioneer a physics based compact model of analog filamentary conductive-metal-oxide (CMO)/HfOx ReRAM devices. Drawing from established physics-based models, we extend and customize them to explain the resistive switching mechanism in our analog ReRAM devices. Current transport in analog ReRAM devices involves carriers hopping through the localized defect states in the CMO layer, while in conventional filamentary ReRAM devices, it relies on ohmic and tunneling conduction. The model considers the ionic diffusion and drift currents as a function of the temperature dynamics and the electric field distribution. As the analog resistive switching arises from the redistribution of oxygen vacancies within a dome region in the proximity of the HfOx filament, we establish the time-dependent analytical description of the oxygen vacancy concentration in each resistance state. The compact model is validated using quasi-static voltage sweep data, resulting in a strong agreement between model predictions and experimental results.

关键词： Analog ReRAM Current transport Defects Conductive-Metal-Oxide Resistive switching Compact model

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Simplified EPFL HEMT Model 50

Simplified EPFL HEMT Model

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Jazaeri, Farzan Shalchian, Majid Yesayan, Ashkhen Rassekh, Amin Mangla, Anurag Parvais, Bertrand Sallese, Jean-Michel Ecole Polytech Fed Lausanne EPFL Electron Device Modeling & Technol Lab EDLAB Lausanne Switzerland Amirkabir Univ Technol Dept Elect Engn Tehran Iran InCize Louvain La Neuve Belgium Ecole Polytech Fed Lausanne Lausanne Switzerland IMEC Leuven Belgium Vrije Univ Brussels Brussels Belgium

ISBN: (纸本)9798350388138;9798350388145

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/I-D). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.

关键词： Gallium nitride

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An Integrated MEMS Magnetic Gradiometer Rejecting Vibrations and Stray Fields 50

An Integrated MEMS Magnetic Gradiometer Rejecting Vibrations...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Gasparini, Enrico Hoogerwerf, Arno Bayat, Dara Durante, Guido Spinola Petremand, Yves Tormen, Maurizio Despont, Michel Close, Gael Melexis Technol SA Bevaix Switzerland CSEM SA Neuchatel Switzerland

ISBN: (纸本)9798350388138;9798350388145

Due to electrification, magnetic sensors are increasingly deployed in magnetically polluted environments. To reject stray fields, differential sensing schemes are typically used. In this paper, we rely instead on a single-point gradiometric sensing scheme based on the force exerted on a magnet, which is directly related to the magnetic field gradient. Unlike the prior art, our concept uses a differential MEMS force-sensing mechanical transducer. The overall sensor rejects not only magnetic stray fields, but also mechanical disturbances such as vibration and gravity. It is the first single-point MEMS gradiometer that can operate unshielded in various orientations. Our prototype realization achieves a noise density of 4 nT/mm/root Hz in a +/- 300 mu T/mm measurement range. We demonstrate its operational effectiveness in a bus-bar current sensing application. Finally, the paper discusses the remaining weaknesses and provides an outlook for MEMS-based magnetic sensors.

关键词： Micromechanical devices magnetic sensors

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Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

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ieee TRANSACTIONS ON electron devices 2025年第4期72卷 1631-1636页

作者： Fuchsberger, A. Verdianu, A. Wind, L. Nazzari, D. Navarrete, Enrique Prado Wilfingseder, C. Aberl, J. Brehm, M. Hartmann, J-M. Sistani, M. Weber, W. M. Tech Univ Wien Inst Solid State Elect A-1040 Vienna Austria Johannes Kepler Univ Linz Inst Semicond & Solid State Phys A-4040 Linz Austria Univ Grenoble Alpes F-38400 Grenoble France CEA LETI MINATEC Campus F-38054 Grenoble France

Nanoscale Ge has been identified as a promising channel material to enable a reduction of power consumption and an enhancement of the switching speed of reconfigurable field-effect transistors (RFETs). Such multigate transistors allow the run-time switching between n- and p-type operation in a single device. In this work, the specific characteristics and benefits of dual- and triple-independent-gate Ge-based RFETs are discussed by a systematic temperature-dependent investigation of the electrical-gating-related charge carrier transport. While the dual-gate configuration features both a unipolar and ambipolar operation mode, the triple-gate configuration offers bias-independent unipolarity with a symmetric behavior regarding its gating capabilities and on-state currents with an enhanced on-to-off-state ratio by one order of magnitude.

关键词： Germanium Voltage Logic gates Silicon Transistors Tunneling Lattices Charge carrier processes Switching circuits Silicon-on-insulator electronic transport germanium multigate devices reconfigurable field-effect transistor (RFET)

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circuits and Systems for Embodied AI: Exploring uJ Multi-Modal Perception for Nano-UAVs on the Kraken Shield 50

Circuits and Systems for Embodied AI: Exploring uJ Multi-Mod...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Potocnik, Viviano Di Mauro, Alfio Lamberti, Lorenzo Kartsch, Victor Scherer, Moritz Conti, Francesco Benini, Luca Swiss Fed Inst Technol Zurich Switzerland Univ Bologna Bologna Italy

ISBN: (纸本)9798350388138;9798350388145

Embodied AI requires pushing complex multi-modal models to the extreme edge for time-constrained tasks such as autonomous navigation of robots and vehicles. On small form-factor devices, e.g., nano-UAVs, such challenges are exacerbated by stringent constraints on energy efficiency and weight. In this paper, we explore embodied multi-modal AI-based perception for Nano-UAVs with the Kraken shield, a 7g multi-sensor (frame-based and event-based imagers) board based on Kraken, a 22 nm SoC featuring multiple acceleration engines for multi-modal event and frame-based inference based on spiking (SNN) and ternary (TNN) neural networks, respectively. Kraken can execute SNN real-time inference for depth estimation at 1.02 k inf/s, 18 mu J/inf, TNN real-time inference for object classification at 10 k inf/s, 6 mu J/inf, and real-time inference for obstacle avoidance at 221 frame/s, 750 mu J/inf.

关键词： Depth perception

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A 6.78MHz Semi-Synchronous Rectifier for Deep Biomedical Implant Applications 50

A 6.78MHz Semi-Synchronous Rectifier for Deep Biomedical Imp...

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50th ieee European solid-state electronics Research conference (ESSERC)

作者： Pasterkamp, Jesse Garripoli, Cannine Konijnenburg, Mario Van Helleputte, Nick Stanzione, Stefano Cantatore, Eugenio Stichting Imec Nederland Eindhoven Netherlands IMEC Leuven Belgium Eindhoven Univ Technol Eindhoven Netherlands

ISBN: (纸本)9798350388138;9798350388145

Inductive powering is a popular choice for powering of wireless implants, but at high implant depth the link efficiency and hence available power drop dramatically. To compensate for this the link frequency may be increased, leading to increased power consumption of the active rectifier. This work proposes a semi-synchronous rectifier which consumes from 9.1 mu W down to 1.6 mu W dynamic power, allowing consumption to scale with a number of resonant cycles used to store energy in the receiver resonant element, increasing efficiency and output power. The proposed circuit is implemented in TSMC 180 nm CMOS and measured, allowing operation from 20 mW transmitted power at up to 135 mm distance in phantom, using a 50 mm and 7.5 mm radius TX and RX coil respectively.

关键词： CMOS integrated circuits

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