This study focuses on exploiting phase-transition properties in VO2 to develop a brain-inspired FitzHugh-Nagumo neuron. A key feature of our implementation is achieved through a self-coupling synapse that creates a ne...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
This study focuses on exploiting phase-transition properties in VO2 to develop a brain-inspired FitzHugh-Nagumo neuron. A key feature of our implementation is achieved through a self-coupling synapse that creates a neuron capable of generating complex firing patterns, such as mixed-mode oscillations. These oscillations hold promise for solving time-dependent computing problems. We study the advantages of coupling FitzHugh-Nagumo oscillators in terms of stability and circuit simplicity compared to Kuramoto-based relaxation oscillators. We show how they can excel in solving computational tasks, specifically in pattern recognition applications.
This work presents a Delta Sigma-modulated switched-capacitor Digital-to-Analog Converter (DAC) in a 130 nm BCD technology that generates precise control voltages for ion traps at very low temperatures down to 13 K. T...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
This work presents a Delta Sigma-modulated switched-capacitor Digital-to-Analog Converter (DAC) in a 130 nm BCD technology that generates precise control voltages for ion traps at very low temperatures down to 13 K. The architecture serves the needs of future trapped-ion quantum computers, which could integrate many such DACs to move ions during quantum gate operations. An offset-cancellation scheme removes the need for per-channel calibration. The low power consumption of 1.5 mW avoids excessive self-heating. To my knowledge, this is the first demonstration of a Delta Sigma DAC operating at these low temperatures.
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single e...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2 mu s, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers.
This work presents a detailed analysis of the electrical effect of silicon dislocations generated from the Deep Trench Isolation (DTI) module on a HV power MOSFET integrated in a proprietary 0.13 mu m BCD platform. Th...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
This work presents a detailed analysis of the electrical effect of silicon dislocations generated from the Deep Trench Isolation (DTI) module on a HV power MOSFET integrated in a proprietary 0.13 mu m BCD platform. The impact of such defects on yield is strongly dependent on device architecture and doping, therefore resulting in extremely different failure rates for n-channel and p-channel devices. The explanation lies in the interaction between the dislocation and the n+ buried layer, resulting in an alteration of the Reduced Surface Field (ReSurF) effect on the device, and thus reducing its voltage capability. This is proven both by TCAD and by dedicated drain implant engineering trials. Moreover, the electrical measurement of a dislocation-based FET, embedded within the power device, is shown, and discussed.
We pioneer a physics based compact model of analog filamentary conductive-metal-oxide (CMO)/HfOx ReRAM devices. Drawing from established physics-based models, we extend and customize them to explain the resistive swit...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
We pioneer a physics based compact model of analog filamentary conductive-metal-oxide (CMO)/HfOx ReRAM devices. Drawing from established physics-based models, we extend and customize them to explain the resistive switching mechanism in our analog ReRAM devices. Current transport in analog ReRAM devices involves carriers hopping through the localized defect states in the CMO layer, while in conventional filamentary ReRAM devices, it relies on ohmic and tunneling conduction. The model considers the ionic diffusion and drift currents as a function of the temperature dynamics and the electric field distribution. As the analog resistive switching arises from the redistribution of oxygen vacancies within a dome region in the proximity of the HfOx filament, we establish the time-dependent analytical description of the oxygen vacancy concentration in each resistance state. The compact model is validated using quasi-static voltage sweep data, resulting in a strong agreement between model predictions and experimental results.
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/I-D). Relying on these figures, insights into GaN HE...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/I-D). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.
Due to electrification, magnetic sensors are increasingly deployed in magnetically polluted environments. To reject stray fields, differential sensing schemes are typically used. In this paper, we rely instead on a si...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
Due to electrification, magnetic sensors are increasingly deployed in magnetically polluted environments. To reject stray fields, differential sensing schemes are typically used. In this paper, we rely instead on a single-point gradiometric sensing scheme based on the force exerted on a magnet, which is directly related to the magnetic field gradient. Unlike the prior art, our concept uses a differential MEMS force-sensing mechanical transducer. The overall sensor rejects not only magnetic stray fields, but also mechanical disturbances such as vibration and gravity. It is the first single-point MEMS gradiometer that can operate unshielded in various orientations. Our prototype realization achieves a noise density of 4 nT/mm/root Hz in a +/- 300 mu T/mm measurement range. We demonstrate its operational effectiveness in a bus-bar current sensing application. Finally, the paper discusses the remaining weaknesses and provides an outlook for MEMS-based magnetic sensors.
Nanoscale Ge has been identified as a promising channel material to enable a reduction of power consumption and an enhancement of the switching speed of reconfigurable field-effect transistors (RFETs). Such multigate ...
详细信息
Nanoscale Ge has been identified as a promising channel material to enable a reduction of power consumption and an enhancement of the switching speed of reconfigurable field-effect transistors (RFETs). Such multigate transistors allow the run-time switching between n- and p-type operation in a single device. In this work, the specific characteristics and benefits of dual- and triple-independent-gate Ge-based RFETs are discussed by a systematic temperature-dependent investigation of the electrical-gating-related charge carrier transport. While the dual-gate configuration features both a unipolar and ambipolar operation mode, the triple-gate configuration offers bias-independent unipolarity with a symmetric behavior regarding its gating capabilities and on-state currents with an enhanced on-to-off-state ratio by one order of magnitude.
Embodied AI requires pushing complex multi-modal models to the extreme edge for time-constrained tasks such as autonomous navigation of robots and vehicles. On small form-factor devices, e.g., nano-UAVs, such challeng...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
Embodied AI requires pushing complex multi-modal models to the extreme edge for time-constrained tasks such as autonomous navigation of robots and vehicles. On small form-factor devices, e.g., nano-UAVs, such challenges are exacerbated by stringent constraints on energy efficiency and weight. In this paper, we explore embodied multi-modal AI-based perception for Nano-UAVs with the Kraken shield, a 7g multi-sensor (frame-based and event-based imagers) board based on Kraken, a 22 nm SoC featuring multiple acceleration engines for multi-modal event and frame-based inference based on spiking (SNN) and ternary (TNN) neural networks, respectively. Kraken can execute SNN real-time inference for depth estimation at 1.02 k inf/s, 18 mu J/inf, TNN real-time inference for object classification at 10 k inf/s, 6 mu J/inf, and real-time inference for obstacle avoidance at 221 frame/s, 750 mu J/inf.
Inductive powering is a popular choice for powering of wireless implants, but at high implant depth the link efficiency and hence available power drop dramatically. To compensate for this the link frequency may be inc...
详细信息
ISBN:
(纸本)9798350388138;9798350388145
Inductive powering is a popular choice for powering of wireless implants, but at high implant depth the link efficiency and hence available power drop dramatically. To compensate for this the link frequency may be increased, leading to increased power consumption of the active rectifier. This work proposes a semi-synchronous rectifier which consumes from 9.1 mu W down to 1.6 mu W dynamic power, allowing consumption to scale with a number of resonant cycles used to store energy in the receiver resonant element, increasing efficiency and output power. The proposed circuit is implemented in TSMC 180 nm CMOS and measured, allowing operation from 20 mW transmitted power at up to 135 mm distance in phantom, using a 50 mm and 7.5 mm radius TX and RX coil respectively.
暂无评论