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检索条件"任意字段=IEEE Conference on Multi-Chip Module"

共 540 条记录，以下是81-90 订阅

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A 212Gb/s PAM-4 Retimer with Integrated High-Swing Optical Driver and chip-to-module Long Reach Capability of 40dB in 5nm FinFET

A 212Gb/s PAM-4 Retimer with Integrated High-Swing Optical D...

引用

ieee International conference on Solid-State Circuits (ISSCC)

作者： V Gurumoorthy A Tan A Iyer A Fan A Farhoodfar B Alnabulsi B Helal C Abidin C Loi D Cartina H Lo I Fabiano J Riani J H Teo J Q Wang K Raviprakash K K Ravi Prakash L Cai L Patra M Bachu N Codega N Shivashankar S Ray S Chong S Jafarlou S Yu T-F Wu WY Neo X Ding Y Wang Z Yan Z Sun S Jantzi L Tse K Chang Marvell Santa Clara CA Marvell Irvine CA Marvell Ottawa Canada Marvell Singapore Singapore Marvell Burnaby Canada Marvell Pavia Italy

ISBN: (数字)9798331541019

ISBN: (纸本)9798331541026

An increasing need for higher throughput driven by artificial intelligence (AI) and machine learning (ML) applications, makes faster l/O interfaces with lower power consumption essential. Top-of-rack switches in hyperscalers now require data rates of 200Gb/s per lambda while adhering to the power budget dictated by multi-source agreements (MSA) such as OSFP-XD. Eliminating extra components like an external laser driver is crucial as it not only reduces power consumption but also minimizes development cost and form factor. Additionally, a key challenge is the chip-to-module (C2M) interface, which is expected to drive long electrical interconnects in GPU-based racks. To address these challenges, this work presents a 4-lane 212.5Gb/s/lane retimer for optical direct detect applications with an integrated high-swing laser driver on the line transmitter (TX) and the ability to equalize 40dB channel loss on the C2M interface.

关键词： Integrated optics Optical losses Power demand Optical interconnections Optical switches Power lasers Throughput Propagation losses Solid state circuits Optical transmitters

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A multi-module Silicon-On-Insulator chip Assembly Containing Quantum Dots and Cryogenic Radio-Frequency Readout Electronics

A Multi-Module Silicon-On-Insulator Chip Assembly Containing...

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ieee International conference on Electronics, Circuits and Systems (ICECS)

作者： David J. Ibberson James Kirkman John J. L. Morton M. Fernando Gonzalez-Zalba Alberto Gomez-Saiz Quatum Motion London United Kingdom London Centre for Nanotechnology UCL London United Kingdom

ISBN: (数字)9798350377200

ISBN: (纸本)9798350377217

Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been fabricated using the same fully-depleted silicon-on-insulator (FDSOI) CMOS process. The assembly is constituted by three chiplets: (i) a low-noise amplifier (LNA), (ii) a single-pole eight-throw switch (SP8T), and (iii) a silicon quantum dot (QD) array. We integrate the chiplets into modules and show respectively, (i) a peak gain over 35 dB with a 3-dB bandwidth from 709 MHz to 827 MHz and an average noise temperature of 6.2 K (minimum 4.2 K), (ii) an insertion loss smaller than 1.1 dB and a noise temperature less than 1.1 K over the 0–2 GHz range, and (iii) single-electron box (SEB) charge sensors. Finally, we combine all modules into a single demonstration showing time-domain radio-frequency multiplexing of two SEBs paving the way to an all-silicon quantum computing system.

关键词： Radio frequency Temperature sensors Temperature distribution Quantum computing Silicon-on-insulator Cryogenics Silicon Sensors Assembly Switching circuits

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Analysis of Influencing Factors of Parallel Current Sharing of High Power module

Analysis of Influencing Factors of Parallel Current Sharing ...

引用

On-Line conference (ONCON), Industrial Electronics Society Annual

作者： Zhaoxuan Qi Li Wang Yongsheng He College of Automation Engineering Nanjing University of Aeronautics and Astronautics Nanjing China

The multi-chip power module serves as the core component of high-power Solid State Power Controller (SSPC). However, discrepancies in the intrinsic parameters of parallel-connected chips and the layout structure of the module result in uneven current distribution among parallel chips, significantly compromising the reliability of SSPC. This paper focuses on a developed 270V/200A power module and establishes an equivalent circuit model considering the parasitic parameters of the module’s actual structure. Firstly, simulations were conducted to observe the current sharing among parallel power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) under various operating modes. Secondly, a typical equivalent circuit model of a power module with three parallel branches was established. By altering the parasitic parameters of the MOSFET itself and the module’s layout structure, an analysis was carried out to investigate the impact of the imbalance in internal parasitic parameters on the module’s parallel current-sharing capability. Simulation results indicate that the steady-state current sharing capability of the power module is significantly influenced by stray resistances and MOSFET’s on-state resistances. Transient current sharing capability, on the other hand, is greatly affected by MOSFET’s threshold voltage, transconductance, gate drive resistance, and the parasitic inductance of the power circuit’s source busbar. Parasitic inductances of the gate drive circuit and drain copper busbar have minimal impact on transient current balance.

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Hierarchical Layout Synthesis and Optimization Framework for High-Density Power module Design Automation 40

Hierarchical Layout Synthesis and Optimization Framework for...

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40th ieee/ACM International conference on Computer Aided Design (ICCAD)

作者： Al Razi, Imam Le, Quang Mantooth, H. Alan Peng, Yarui Univ Arkansas Comp Sci & Comp Engn Dept Fayetteville AR 72701 USA Univ Arkansas Dept Elect Engn Fayetteville AR 72701 USA

ISBN: (纸本)9781665445078

multi-chip power module (MCPM) layout design automation has become an emerging research field in the power electronics society. MCPM physical design is currently a trial-and-error procedure that heavily relies on the designers' experience to produce a reliable solution. To push the boundary of energy efficiency and power density, novel packaging technologies are emerging with increasing design complexity. As this manual design process becomes the bottleneck in design productivity, the power electronics industry is calling for more intelligence in design CAD tools, especially for advanced packaging solutions with stacked substrates. This paper presents a physical design, synthesis, and optimization framework for 2D, 2.5D, and 3D power modules. Generic, scalable, and efficient physical design algorithms are implemented with optimization metaheuristics to solve the hierarchical layout synthesis problem. Corner stitching data structure and hierarchical constraint graph evaluation have been customized to better align with power electronics design considerations. A complete layout synthesis process is demonstrated for both 2D and 3D power module examples. Further, electro-thermal design optimization is carried out on a sample 3D MCPM layout using both exhaustive and evolutionary search methods. Our algorithm can generate 937 3D layouts in 56 s, resulting in 10 layouts on the Pareto-front. In addition, our optimized 3D layouts can achieve 1.3 nH loop inductance with 38 degrees C temperature rise and 836 mm(2) footprint area, compared to 2D layouts with 8.5 nH, 99 degrees C, and 2000 mm(2).

关键词： PowerSynth 2D/2.5D/3D Power module Layout Optimization Physical Design Automation

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Research on the Thermal Reliability of multi-Unit Power Integrated module

Research on the Thermal Reliability of Multi-Unit Power Inte...

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2021 China Semiconductor Technology International conference, CSTIC 2021

作者： Hu, Juan Bao, Jie Wang, Li Lu, Sha Engineering Technology Research Center of Intelligent Microsystem of Anhui Province Huangshan China

ISBN: (纸本)9781665449458

multi-unit IGBT PIM (Power Integrated module) is widely used in industrial transmission and household air conditioning due to its small size, light weight and low switching loss. More and more attention is paid to its reliability. Through a simulation study, the package structure of a PIM with a three-phase bridge rectifier, a chopper and a three-phase IGBT module was analyzed. Due to the limitation of package structure, chopper circuit works at the highest temperature. By comparing the temperature distribution of a SiC hybrid PIM using SiC Schottky barrier diodes instead of Si fast recovery diodes with the original Si-PIM, the chip layout and vertical packaging structure of the SiC hybrid PIM are optimized. The high thermal conductivity material such as graphene was applied to the PIM to improve the thermal reliability performance. After optimization, the maximum temperature of the module can drop by 24°C. © 2021 ieee.

关键词： Graphene

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Superconducting Molybdenum multi-chip module Approach for Cryogenic and Quantum Applications

Superconducting Molybdenum Multi-Chip Module Approach for Cr...

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Electronic Components and Technology conference (ECTC)

作者： Archit Shah Sherman E. Peek Bhargav Yelamanchili Vaibhav Gupta David B. Tuckerman Chris Cantaloube John A. Sellers Michael C. Hamilton Department of Electrical Engineering Auburn University Auburn USA Tuckerman and Associates Inc. Washington USA Microsoft Corporation California USA

We describe a superconducting multi-chip module (S-MCM) technology using Mo as a robust substrate on which to construct multi-layer superconducting redistribution layers for chip-to-chip signal transmission for densely-integrated cryogenic and quantum electronics. The mechanical robustness and ductile nature of Mo can allow for the integration of chips on a larger scale S-MCM substrate compared to currently available technologies. We demonstrate this integration technology by flip-chip bonding Si chips to Mo substrates using In bumps and epoxy underfill. Superconducting daisy-chain test structures were formed by Mo substrates with polyimide dielectric and superconducting Nb traces connected to Si chips with varying numbers of transitions and bump array densities. Resistance and superconducting transition temperatures of the various daisy-chain configurations were measured from room temperature to 4.2 K. To explore CTE-related challenges, assemblies using Si chips with dimensions up to 27 mm x 22 mm (In bump array size of 20 mm x 20 mm) were found to survive the multiple thermal cycles from room temperature to cryogenic temperatures.

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X-ray Inspection for FOMCM (Fan-Out multi chip module) μ-bump Non-wet 23

X-ray Inspection for FOMCM (Fan-Out Multi Chip Module) μ-bu...

引用

23rd ieee Electronics Packaging Technology conference, EPTC 2021

作者： Ke, Chung-Yu Chen, Liang-Pin Siliconware Precision Industrial Co. Ltd No. 19 Keya Rd. Daya Dist. Taichung Taiwan

ISBN: (纸本)9781665416191

Fan-out (FO) package is one of newest package in assembly industry [1]. Therefore, there are still many unresolved problems that must be solved. One of the main problems are non-wet solder joint. Normally, X-ray is used to detect it [3]. The X-ray can be classified into three main types, namely 2D X-ray, 3D X-ray and CT module X-ray. 2D X-ray is a common machine. It is used to detect by the difference in grayscale caused by the different absorption rate after the Xray penetrates. The principle of 3D X-ray is reconstructed the image by rotating a sample to shoot multiple projections [4]. Thus, the defect can be checked from different angles and voxel resolution is only 40nm leading to the non-wet gap © 2021 ieee.

关键词： Scanning electron microscopy

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Cold Survivable Current Sense multi-chip module

Cold Survivable Current Sense Multi-Chip Module

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ieee Aerospace conference

作者： Lias, Malcolm Bolotin, Gary Hunter, Donald Cheng, Ben CALTECH Jet Prop Lab 4800 Oak Grove Dr Pasadena CA 91109 USA

ISBN: (纸本)9781728127347

This paper will present the design of a Current Sense module (CSM) used to measure motor phase currents that is capable of surviving the harsh ambient environment of ocean worlds, such as Europa and Enceladus. The CSM module is fabricated by i3 Electronics using their multi-chip module (MCM) technology with techniques developed by JPL to allow this module to survive temperatures down to -184 degrees C. This module greatly improves the ability to measure phase and bridge current which can be problematic in extreme environments. In addition, by packaging these electronics at the die level, we achieve significant weight and size savings. This modules is one of several modules that employ similar techniques that are integrated into a distributed or centralized motor controller. This paper will discuss the modules design along with a summa of our test results.

关键词： Microprocessor chips

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Research on Miniaturized E-band Integrated Transmitter module

Research on Miniaturized E-band Integrated Transmitter Modul...

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International conference on Communication Technology (ICCT)

作者： Shengsi Wang Ran Chu Linlin Sun Jia Liao Yanhong Wang School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing China

ISBN: (数字)9798350363760

ISBN: (纸本)9798350363777

With the development of microwave communication systems, integrated, ultra-wideband, and highly reconfigurable microwave components have gradually become the first choice for electronic warfare communication systems, and the transmitter front-end is an important part of the communication system. In the paper, based on microwave monolithic integrated circuits, a highly integrated transmitter assembly in E-band is designed by using multi-chip micro-assembly technology, and the dimensions of the transmitter are 60mm×30mm×*** E-band integrated transmitter assembly can output an RF signal of 73.5GHz±2.5GHz, with the output power of 10.3dBm at the center frequency point, and output flatness is less than ±1.1dB, and using the error vector magnitude (EVM) of the transmit signal under 16QAM modulation is less than 7.34%.

关键词： Transmitters RF signals Microwave communication Microwave circuits Vectors Broadband communication Microwave FET integrated circuits Assembly Power generation Ultra wideband technology

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Design of a Broadband HTCC SIP Packaging module 13

Design of a Broadband HTCC SIP Packaging Module

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13th International conference on Microwave and Millimeter Wave Technology, ICMMT 2021

作者： Zhang, Yang Zhang Wei, Wei Yong, Wang Biao, Sun Xingwen, Zhang Jun, Xun Xin Xing, Fei China Shipbuilding Industry Co. 723 Institute Yangzhou225600 China

ISBN: (纸本)9781665434379

In this paper, we use the characteristics of high temperature co-fired ceramic materials, a novel broadband electromagnetic transmission structure is designed and verified by simulation and experiment. Based on this structure and combined with gold wire bonding, BGA, ect. we obtain a broadband RF multi-chip SIP packaging module, which can be in a compact size of broadband RF front end integration into a ceramic SIP package. © 2021 ieee.

关键词： System-in-package

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