The proceedings contain 44 papers. The topics discussed include: a new aspect of plasma-induced physical damage in three-dimensional scaled structures;random telegraph noise as a new measure of plasma-induced charging...
ISBN:
(纸本)9781479921539
The proceedings contain 44 papers. The topics discussed include: a new aspect of plasma-induced physical damage in three-dimensional scaled structures;random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs;ALD ZrO2 processes for BEoL device applications;pathfinder3D: a framework for exploring early thermal tradeoffs in 3DIC;a brief introduction on contemporary high-level synthesis;bio-integrated electronics;characterization and modeling of charge trapping: from single defects to devices;robust low-power reconfigurable computing with a variation-aware preferential design approach;assessing device reliability through atomic-level modeling of material characteristics;piezoelectric soft MEMS for tactile sensing and energy harvesting;and understanding timing impact of BTI/RTN with massively threaded atomistic transient simulations.
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for le...
ISBN:
(纸本)9798350361834
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for leakage suppression and strain enhancement in gate-all-around nanosheet FETs;high performance termination design and fabrication For SiC MOSFET device;a blocker-tolerant high-linear receiver employing baseband noise-cancelling and bottom-plate switched-capacitor techniques;vanadium oxide-based artificial synapses for construction of artificial neural system;pseudo-parallel symmetrical and crossed perovskite solar cells for bifacial applications;deep investigation into variability of complementary dopant segregated tunneling FET based on foundry platform;and a dual-gate trigger thyristor for reducing the probability of false triggering.
The proceedings contain 37 papers. The topics discussed include: fault tolerant design for memristor-based AI accelerators;design enhancement of folded beams attachment for mems-based triaxial accelerometer;LDO compar...
ISBN:
(纸本)9798350363128
The proceedings contain 37 papers. The topics discussed include: fault tolerant design for memristor-based AI accelerators;design enhancement of folded beams attachment for mems-based triaxial accelerometer;LDO comparison with new push-pulled flipped voltage follower topology for transient response improvement;punch-through variability in buried channel transistors;machine learning-based feasibility estimation of digital blocks in BCD technology;testing ReRAM-based TCAM for computation-in-memory applications;structure for characterization of MOS transistors in 28FD-SOI technology;embedded feature selection in MCU performance screening;and extreme temperature automotive testing.
The proceedings contain 22 papers. The topics discussed include: Cortex-M0+-based pacemaker: CMOS technologies benchmark to achieve ultra-low power operations;analysis and design of an innovative 19.5 GHz active phase...
ISBN:
(纸本)9798350316957
The proceedings contain 22 papers. The topics discussed include: Cortex-M0+-based pacemaker: CMOS technologies benchmark to achieve ultra-low power operations;analysis and design of an innovative 19.5 GHz active phase shifter architecture, implemented in a 0.13 m BiCMOS SiGe: C process, for beamforming in 5G applications;fusion with EEG signals and Images for closed or open eyes detection using deep learning;HealthBeat traceability platform based on blockchain technology;static nonlinear errors compensation for RF front-end circuit on high speed RF sampling (Ti)ADCs;design techniques for reference clock jitter optimization for high speed PHYs;simulation improvements, challenges solutions while using DTL, signal access DebuggerDB optimization, PC, TC, save-restore;and novel and scalable instantaneous voltage drop based scan methodology.
The proceedings contain 298 papers. The topics discussed include: sharp-switching devices with positive feedback mechanisms based on silicon-on-insulator substrate;impact of nanosheet pitch, ambient temperature, and t...
ISBN:
(纸本)9781665469067
The proceedings contain 298 papers. The topics discussed include: sharp-switching devices with positive feedback mechanisms based on silicon-on-insulator substrate;impact of nanosheet pitch, ambient temperature, and thermal contact resistance on electrothermal characteristics of vertical gate-all-around nanosheet FETs;bias temperature instability analysis of nanosheet based SRAM;parallel dual-gate thin-film transistors for sensing and neuromorphic computing;a micro transfer-printer for high-accuracy optoelectronic and photonic integration;silicon nanowire transistor integrated with phase change gate;a new type of homogenization field power semiconductor devices;ultralow loss lateral insulated gate bipolar transistor with U-shape trench anode;a novel approach to suppress the inhomogeneous reverse recovery behavior of the body diode in superjunction MOSFET;a novel full tun-on reverse-conducting IGBT with enhanced carrier concentration modulation in collector side;and a novel insulating-pillar superjunction with vertical insulators: breakthrough of specific ON-resistance limit.
Cell-to-pack (CTP) is the prevailing method for EV battery assembly due to its compact size, cost-effectiveness, streamlined assembly with fewer connections, and enhanced reliability. The primary challenges in Battery...
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ISBN:
(纸本)9798331517137;9798331517144
Cell-to-pack (CTP) is the prevailing method for EV battery assembly due to its compact size, cost-effectiveness, streamlined assembly with fewer connections, and enhanced reliability. The primary challenges in Battery Monitoring ICs (BMIC) for CTP lie in supporting more series-connected monitoring cells and achieving greater measurement precision. This presentation outlines how Auto Power-SOI technology facilitates the development of advanced BMICs that excel in precision, integrate high and low voltage components on a single die, and meet stringent functional safety demands, addressing the evolving needs of CTP technology in EV batteries.
Isolation capacitors are widely used in high-voltage systems to protect low-voltage circuits and ensure user safety. However, the electric field at the edges of the capacitor is much larger than in the center, which m...
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ISBN:
(纸本)9798331517137;9798331517144
Isolation capacitors are widely used in high-voltage systems to protect low-voltage circuits and ensure user safety. However, the electric field at the edges of the capacitor is much larger than in the center, which makes the edge structure prone to breakdown, thus affecting its voltage withstand performance. We control the distribution of the electric field by altering the design of the capacitor's metal plates to reduce the maximum field strength and achieve more uniform distribution of the electric field.
A broadband monolithic millimeter-wave transceiver multi-function chip (MFC) operating from 24 to 33 GHz has been developed based on the GaN-on-Si technology. This chip is composed of three modules: a single-pole doub...
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ISBN:
(纸本)9798331517137;9798331517144
A broadband monolithic millimeter-wave transceiver multi-function chip (MFC) operating from 24 to 33 GHz has been developed based on the GaN-on-Si technology. This chip is composed of three modules: a single-pole double-throw (SPDT) switch, a low-noise amplifier (LNA), and a power amplifier (PA) with a total surface area of 4.5x3 mm(2). In the transmit-mode (Tx), the chip achieves a saturated output power greater than 33 dBm with a power-added efficiency (PAE) exceeding 23.8%. In the receive-mode (Rx), the chip exhibits a noise figure less than 2.7 dB and a small signal gain greater than 18 dB.
The demands for near-infrared (NIR) image sensors keep increasing for camera applications. For high sensitivity in NIR imaging, RGBW color filter array is used with the white color filter adapted for the infrared pixe...
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ISBN:
(纸本)9798331517137;9798331517144
The demands for near-infrared (NIR) image sensors keep increasing for camera applications. For high sensitivity in NIR imaging, RGBW color filter array is used with the white color filter adapted for the infrared pixel. However, the crosstalk also increases with high sensitivity. Crosstalk is one of the important optical performance, especially affecting modulation transfer function (MTF). In this paper, the crosstalk is studied and reduced by a NIR-cutoff layer. By optical simulation, the crosstalk in each of the R, G, and B pixels is reduced by about 10%. The overall crosstalk in the pixels was reduced from 75.5% to 48.2%. Therefore, this paper shows that the crosstalk at NIR wavelengths is improved while maintaining the high sensitivity characteristics of RGBW CFA image sensors.
The ion-sensitive field effect transistors (ISFETs) with direct ionic solution gate (DG) and an extended gate (EG) are fabricated for electrophysiology detection. Backgate modulation is employed to adjust the operatio...
详细信息
ISBN:
(纸本)9798331517137;9798331517144
The ion-sensitive field effect transistors (ISFETs) with direct ionic solution gate (DG) and an extended gate (EG) are fabricated for electrophysiology detection. Backgate modulation is employed to adjust the operation point of ISFETs, thereby achieving enhanced sensitivity during operation. It has been determined that the charging mechanisms of the electric double layer (EDL) between ion liquids and solids are a key determinant of sensitivity. In this case, ensuring direct contact between the ionic liquid and the oxide film, rather than using an extended gate, is crucial for fabricating high-performance ISFETs.
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