This paper presents a feedback circuit topologies based on AlGaN/GaN (Aluminum Gallium Nitride / Gallium Nitride) MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistor) to address the issue of abno...
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ISBN:
(纸本)9798331517137;9798331517144
This paper presents a feedback circuit topologies based on AlGaN/GaN (Aluminum Gallium Nitride / Gallium Nitride) MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistor) to address the issue of abnormal output ripple in DC-DC buck converters and mitigate voltage overcharge at the operating point. The proposed circuit structure is simulated and calibrated using the ADS (Advanced design System) platform. Subsequently, the circuit's output characteristics and principles of the optimized bootstrap comparator are analyzed. The results show that the maximum output voltage fluctuation is 0.05 V and the average fluctuation is less than 0.5 %, providing references and suggestions for the feasibility and application potential of the buck converter circuit structure in monolithic integrated GaN power converters.
This work presents the design of a low noise amplifier (LNA) using TSMC CMOS 28-nm technology, capable of operating at an ultra-low voltage of 0.2 V with a minimum power consumption of 48 mu W. The LNA achieves a gain...
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ISBN:
(纸本)9798331517137;9798331517144
This work presents the design of a low noise amplifier (LNA) using TSMC CMOS 28-nm technology, capable of operating at an ultra-low voltage of 0.2 V with a minimum power consumption of 48 mu W. The LNA achieves a gain ranging from 11.3 dB to 29.3 dB while maintaining input and output return losses below -10 dB. At maximum gain, the LNA achieves a NF of 1.93 dB. Furthermore, an optimized performance mode offers power consumption below 100 mu W, with other performance metrics remaining competitive.
This article presents a high efficiency power amplifier (PA) based on TSMC 28 nm complementary metal oxide semiconductor (CMOS) process at 2.4 GHz. The transistors in the proposed amplifier are biased at different sta...
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ISBN:
(纸本)9798331517137;9798331517144
This article presents a high efficiency power amplifier (PA) based on TSMC 28 nm complementary metal oxide semiconductor (CMOS) process at 2.4 GHz. The transistors in the proposed amplifier are biased at different states to enhance both the linearity and power added efficiency (PAE). The PA's saturation output is 25.6 dBm and it gets a maximum output of 23.7 dBm at output 1 dB compression point (OP1dB). The PAE achieved 41% at the OP1dB point.
A Low-Voltage Low-Power (LVLP) scalable voltage reference without the use of the parasitic vertical PNP, based on Two Transistor (2T) bandgap core is proposed. The voltage reference is achieved through Global Foundry ...
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ISBN:
(纸本)9798331517137;9798331517144
A Low-Voltage Low-Power (LVLP) scalable voltage reference without the use of the parasitic vertical PNP, based on Two Transistor (2T) bandgap core is proposed. The voltage reference is achieved through Global Foundry (GF) 55 nm CMOS technology, the minimum power supply can be lowered to 0.55V. At the nominal supply voltage 0.9V, the temperature coefficient of the proposed voltage reference is 1.837ppm/degrees C with 0.17%-line sensitivity and -66.24dB power supply rejection (PSR). By using extremely large resistance, at the minimum supply voltage 0.5V the power consumption 16.35nW.
This paper presented a transient-enhanced low dropout voltage (LDO) regulator with an integrated push- pull composite power transistor and an embedded voltage reference (VR). The use of a composite power transistor sh...
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ISBN:
(纸本)9798331517137;9798331517144
This paper presented a transient-enhanced low dropout voltage (LDO) regulator with an integrated push- pull composite power transistor and an embedded voltage reference (VR). The use of a composite power transistor shifts parasitic poles to higher frequencies, enhancing stability. A recycling folded cascode (RFC) amplifier achieves higher loop gain, improving load and line regulation. A recovery time enhancement circuit reduces overshoot recovery. The VR employs various resistor types for high-order compensation, with trimming ensuring stable performance across corners. Implemented in GF 55nm technology, the LDO operates at 1V to 1.2V input voltage, delivering up to 50mA current with less than 200mV dropout. It consumes 43.85 mu A quiescent current, settles within 1 mu A, and exhibits excellent line regulation (3.76mV/V), load regulation (0.0076mA/mV), and PSRR (-44dB @ 1KHz).
In this paper, a fully integrated 2.4 GHz high-linearity class E power amplifier (PA) is proposed based on the TSMC 28 nm CMOS process. By optimizing the topology of the design, balance between linearity and efficienc...
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ISBN:
(纸本)9798331517137;9798331517144
In this paper, a fully integrated 2.4 GHz high-linearity class E power amplifier (PA) is proposed based on the TSMC 28 nm CMOS process. By optimizing the topology of the design, balance between linearity and efficiency, as well as reducing power consumption is achieved under the condition of low voltage power supply. The proposed power amplifier adopts the differential topology with two-stage linear power amplifier driving a class E power amplifier. By utilizing the source inductance and series resistance, the stability of the PA is improved. Finally, the proposed PA achieves saturation output power (Psat) of 18.53 dBm, gain of 24.52 dB, output 1 dB compression point (OP1dB) of 17.17 dBm, maximum power added efficiency (PAE) of 48.96%, and 37.38% at the OP1dB point. The area of the layout is 1959 mu m x 726 mu m.
This work presents the temperature dependence in the coercive field (E-c) of ferroelectric Al0.8Sc0.2N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric-semiconductor (MFS) capacitor shows a ...
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ISBN:
(纸本)9798331517137;9798331517144
This work presents the temperature dependence in the coercive field (E-c) of ferroelectric Al0.8Sc0.2N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric-semiconductor (MFS) capacitor shows a remnant polarization (P-r) exceeding 143 mu C/cm(2) and E-c of 8 MV/cm at 300 K. Furthermore, both the maximum E-c (E-c, (max)) and the concentrated E-c (E-c, (con)) exhibit a linear decrease with a temperature coefficient of - 0.0126 MV/cm.K as the temperature increases. These results provide a reference for the prediction of variable temperature in wurtzite ferroelectric memory.
Wurtzite-type ferroelectric material, such as e.g., AlScN, has attracted considerable attention to fabricate new electronic devices for its large remanent polarization (70-120 mu C/cm(2)), the integration compatibilit...
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ISBN:
(纸本)9798331517137;9798331517144
Wurtzite-type ferroelectric material, such as e.g., AlScN, has attracted considerable attention to fabricate new electronic devices for its large remanent polarization (70-120 mu C/cm(2)), the integration compatibility with back-end-of-line (BEOL) process, and dimensional scaling. In this work, the high-quality ferroelectric Al0.73Sc0.27N film has been prepared and Cu/Al0.73Sc0.27N/Pt memristors array was fabricated. The device exhibits volatile threshold switching (TS) characteristics. In addition, its synaptic plasticity has been studied by applying pulse stimulation. This work is meaningful for the development of neuromorphic computing based on ferroelectric memristors.
The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching thei...
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ISBN:
(纸本)9798331517137;9798331517144
The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of SiNx and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.
This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode st...
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ISBN:
(纸本)9798331517137;9798331517144
This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode structure to achieve higher output power, better reverse isolation and stability. The two-stage differential cascade structure, combined with the transformer for good circuit matching, improves the overall circuit gain. At the same time, the cross-coupling capacitor is used to neutralize the Miller effect, and the negative feedback is introduced to further improve the circuit stability. Measurements of the PA show a 3dB-bandwith of the output power from 18GHz to 40GHz. The maximum output power is 17.8dBm at 1dB-compression-point (P1dB) and 18.9dBm in saturation. Togeher with the peak gain of 20 dB high power added efficiencies (PAEs) of 10% in saturation are achieved.
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