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检索条件"任意字段=IEEE International Conference on Integrated Circuit Design and Technology"
76526 条 记 录,以下是11-20 订阅
排序:
Simulation and Analysis of GaN MIS-HEMT Based Optimized Bootstrap Comparator Applied to DC-DC Buck Converter Feedback Loop
Simulation and Analysis of GaN MIS-HEMT Based Optimized Boot...
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ieee international conference on IC design and technology (ICICDT)
作者: Fan, Rui Tani, Junzhe Xu, Yunsong Quan, Dechang Gong, Ruiqi Low, Kain Lu Cuil, Pengju Gul, Jiangmin Liu, Wen Xian Jiaotong Liverpool Univ Sch Adv Technol Suzhou 215123 Peoples R China Univ Liverpool Dept Elect Engn & Elect Liverpool L69 3GJ Merseyside England
This paper presents a feedback circuit topologies based on AlGaN/GaN (Aluminum Gallium Nitride / Gallium Nitride) MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistor) to address the issue of abno... 详细信息
来源: 评论
An Ultra-Low Power CMOS Low Noise Amplifier Using Self-Forward Body Biasing for 2.4 GHz Wireless Communication
An Ultra-Low Power CMOS Low Noise Amplifier Using Self-Forwa...
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ieee international conference on IC design and technology (ICICDT)
作者: Li, Shuai Thangarasu, Bharatha Kumar Yeo, Kiat Seng Tianjin Univ Sch Microelect Tianjin Peoples R China Singapore Univ Technol & Design Singapore Singapore
This work presents the design of a low noise amplifier (LNA) using TSMC CMOS 28-nm technology, capable of operating at an ultra-low voltage of 0.2 V with a minimum power consumption of 48 mu W. The LNA achieves a gain... 详细信息
来源: 评论
A 2.4 GHz High Efficiency Wideband Power Amplifier in 28-nm CMOS Process
A 2.4 GHz High Efficiency Wideband Power Amplifier in 28-nm ...
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ieee international conference on IC design and technology (ICICDT)
作者: Hongshi, Yu Thangarasu, Bharatha Kumar Yeo, Kiat Seng Tianjin Univ Sch Microelect Tianjin Peoples R China Singapore Univ Technol & Design Singapore Singapore
This article presents a high efficiency power amplifier (PA) based on TSMC 28 nm complementary metal oxide semiconductor (CMOS) process at 2.4 GHz. The transistors in the proposed amplifier are biased at different sta... 详细信息
来源: 评论
Low-Voltage Low-Power Scalable Voltage Reference
Low-Voltage Low-Power Scalable Voltage Reference
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ieee international conference on IC design and technology (ICICDT)
作者: Zhang Kangyu Liter, Siek Nanyang Technol Univ Sch Elect & Elect Engn Singapore Singapore
A Low-Voltage Low-Power (LVLP) scalable voltage reference without the use of the parasitic vertical PNP, based on Two Transistor (2T) bandgap core is proposed. The voltage reference is achieved through Global Foundry ... 详细信息
来源: 评论
A Transient-Enhanced Low-Dropout Regulator design With Embedded Voltage Reference in 55-nm CMOS technology
A Transient-Enhanced Low-Dropout Regulator Design With Embed...
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ieee international conference on IC design and technology (ICICDT)
作者: Xie, Xinzhe Siek, Liter Nanyang Technol Univ Sch Elect & Elect Engn Singapore Singapore
This paper presented a transient-enhanced low dropout voltage (LDO) regulator with an integrated push- pull composite power transistor and an embedded voltage reference (VR). The use of a composite power transistor sh... 详细信息
来源: 评论
A 2.4 GHz Fully integrated Highly Linear Class E Power Amplifier in 28-nm CMOS
A 2.4 GHz Fully Integrated Highly Linear Class E Power Ampli...
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ieee international conference on IC design and technology (ICICDT)
作者: Liu, Yuqing Thangarasu, Bharatha Kumar Yeo, Kiat Seng Tianjin Univ Sch Microelect Tianjin Peoples R China Singapore Univ Technol & Design Singapore Singapore
In this paper, a fully integrated 2.4 GHz high-linearity class E power amplifier (PA) is proposed based on the TSMC 28 nm CMOS process. By optimizing the topology of the design, balance between linearity and efficienc... 详细信息
来源: 评论
Temperature Dependence in Coercive Field of Ferroelectric AlScN integrated on Si Substrate
Temperature Dependence in Coercive Field of Ferroelectric Al...
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ieee international conference on IC design and technology (ICICDT)
作者: Sun, Wenxin Zhou, Jiuren Jin, Faxin Liu, Ning Zheng, Siying Li, Bochang Li, Xiaoxi Liu, Yan Hao, Yue Han, Genquan Xidian Univ Sch Microelect Xian 710126 Peoples R China Xidian Univ Hangzhou Inst Technol Hangzhou 311200 Peoples R China
This work presents the temperature dependence in the coercive field (E-c) of ferroelectric Al0.8Sc0.2N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric-semiconductor (MFS) capacitor shows a ... 详细信息
来源: 评论
Exploration of Synaptic Plasticity in Memristor based Wurtzite Ferroelectric Material
Exploration of Synaptic Plasticity in Memristor based Wurtzi...
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ieee international conference on IC design and technology (ICICDT)
作者: Han, Cong Wei, Yixin Zhang, Miaocheng Liu, Yi Wang, Xinpeng Tong, Yi Nanjing Univ Posts & Telecommun Coll Integrated Circuit Sci & Engn Nanjing Peoples R China Gusu Lab Mat Suzhou Peoples R China
Wurtzite-type ferroelectric material, such as e.g., AlScN, has attracted considerable attention to fabricate new electronic devices for its large remanent polarization (70-120 mu C/cm(2)), the integration compatibilit... 详细信息
来源: 评论
Reversible transition of volatile to non-volatile resistive switching in Cu/SiNx/ZnO/Pt memristor
Reversible transition of volatile to non-volatile resistive ...
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ieee international conference on IC design and technology (ICICDT)
作者: Li, Pengtao Zhang, Ziyang Wang, Zijian Zhang, Guobin Xing, Shengpeng Wang, Zhen Fan, Xuemeng Zhang, Zhejia Luo, Qi Zhang, Yishu Zhejiang Univ Coll Integrated Circuits Hangzhou 311200 Peoples R China ZJU Hangzhou Global Sci & Technol Innovat Ctr Hangzhou 310027 Peoples R China
The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching thei... 详细信息
来源: 评论
A K- to-Ka Band Ultra Wideband Power Amplifier in 180-nm SiGe technology
A K- to-Ka Band Ultra Wideband Power Amplifier in 180-nm SiG...
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ieee international conference on IC design and technology (ICICDT)
作者: He, Yuxin Meng, Fanyi Kok, Chiang Liang Ho, Chee Kit Tianjin Univ Sch Microelect Tianjin Peoples R China Univ Newcastle Coll Engn Callaghan NSW Australia Singapore Inst Technol Engn Cluster Singapore Singapore
This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode st... 详细信息
来源: 评论