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检索条件"任意字段=IEEE International Conference on Integrated Circuit Design and Technology"
76526 条 记 录,以下是71-80 订阅
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Hardware Implementation of High Speed Fault-Tolerant Parallel Accelerator  17
Hardware Implementation of High Speed Fault-Tolerant Paralle...
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Ma, Wenzhe Fudan University School of Microelectronics Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai201203 China
Process advancements and single-event effects in terrestrial environments have heightened the importance of fault-tolerant design for FPGA-based digital circuits. This paper presents a hardware implementation of a fau... 详细信息
来源: 评论
New Insights into the Saturation Behavior of the Hot Carrier Degradation in STI-Based N-Type LDMOS  17
New Insights into the Saturation Behavior of the Hot Carrier...
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Yu, Zhuoqing Gao, Dan Sun, Yongsheng Huang, Junlin Team of Design For Reliabilty Hisilicon Shanghai China
The saturation behavior of Hot Carrier Degradation (HCD) kinetics in a Shallow Trench Isolation (STI)-based N-type Laterally Diffused MOS (NLDMOS) is studied which is found mainly due to the decrease of impact ionizat... 详细信息
来源: 评论
FCE: A Fast CGRA Architecture Exploration Framework  17
FCE: A Fast CGRA Architecture Exploration Framework
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Chen, Sichao Mao, Yiqing Dai, Yuan Gao, Xuchen Luk, Wai-Shing Yin, Wenbo Wang, Lingli Fudan University State Key Laboratory of Integrated Chips and Systems China
Conventional design space exploration (DSE) flows of Coarse-grained reconfigurable arrays (CGRAs) are based on black-box optimization methods, which are slow and ineffective. This paper proposes FCE, a fast CGRA DSE f... 详细信息
来源: 评论
design of a High-Precision Self-Calibration Readout circuit for CMOS Microbolometer  17
Design of a High-Precision Self-Calibration Readout Circuit ...
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Zhang, Qianhao Liu, Jie Xu, Sheng Liao, Yiming Yan, Feng Ji, Xiaoli School of Electronic Science and Engineering Nanjing University Jiangsu210046 China School of Electronic and Optical Engineering Nanjing University of Science and Technology Jiangsu210094 China
Microbolometer has a wide range of applications in military detection, fire warning, security monitoring and biomedical detection. However, because the response current signal of polycrystalline silicon microbolometer... 详细信息
来源: 评论
A 109 dB 44-pArms Current Readout circuit with Automatic Current Control for Multimodality Electrochemical Sensing  17
A 109 dB 44-pArms Current Readout Circuit with Automatic Cur...
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Wang, Lina Li, Jianzheng Hu, Weiming Qin, Yajie School of Information Science and Technology Fudan University Shanghai200433 China
This paper reports a high-resolution and wide dynamic range current readout circuit for multimodality electrochemical sensing in 0.11 μ m standard CMOS process. The design utilizes a bidirectional current sensing pot... 详细信息
来源: 评论
Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization
Interface Engineering for Performance and Reliability Optimi...
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ieee international conference on IC design and technology (ICICDT)
作者: Li, Xueyang Yuan, Yaxuan Jin, Chengji Li, Xinze Yu, Xiao Chen, Bing Ran, Cheng Han, Genquan Zhejiang Univ Coll Integrated Circuits Hangzhou 311200 Peoples R China Zhejiang Lab Res Ctr Intelligent Chips Hangzhou 311121 Peoples R China Xidian Univ Hangzhou Inst Technol Hangzhou 311231 Peoples R China
We report an integration and comprehensive study of the ozone SiO2/HfO2 interfacial layer (IL) on Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with HfO2/SiO2 IL, HfO2 IL and no IL were... 详细信息
来源: 评论
Porting OpenRAM generator to an OTFT process  6
Porting OpenRAM generator to an OTFT process
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2024 ieee international Flexible Electronics technology conference
作者: Herrera-Sanchez, Pablo Rezaee, Ashkan Saiz, Joaquin Castells-Rufas, David Ogier, Simon Casanova, Raimon Carrabina, Jordi Autonomous Univ Barcelona Microelect Dept Bellaterra Spain Flexi SL R&D Dept Sant Cugat Del Valles Spain Smartkem Ltd R&D Dept Sedgefield England
Memories are essential components for building flexible organic integrated microsystems for Smart Sensors. This work presents the steps to build a parameterizable SRAM memory generator for the 6-layer OTFT PMOS proces... 详细信息
来源: 评论
Research on Reliability Risk-Based Microstructure Evaluation Method for integrated circuits  25
Research on Reliability Risk-Based Microstructure Evaluation...
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25th international conference on Electronic Packaging technology (ICEPT)
作者: Chen, Mian-Zhi Cai, Jin-Bao He, Sheng-Zong Liang, He Yong, Wang Kong, Ling-Ming Jun, Chen Wu, Jing-Xi Guangzhou Power Supply Bur Guangzhou Peoples R China CEPREI Lab Guangzhou Peoples R China
The reliability of design, process, inner microstructure and material used in integrated circuit is the key to determining the inherent reliability level of the device itself. With the continuous updating and iteratio... 详细信息
来源: 评论
design and Evaluation of a Power Efficient Phase-Frequency Detector with PVT Tolerance in 45 nm CMOS technology  3
Design and Evaluation of a Power Efficient Phase-Frequency D...
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3rd ieee international conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2024
作者: Sharma, Jyoti Singhal, Archana Varma, Tarun Boolchandani, Dharmendar MNIT Jaipur Bit Mesra Department of Ece Jaipur Campus Jaipur India Mnit Jaipur Department of Ece Jaipur India
This study investigates the deployment of a phase frequency detector by utilizing 45 nm CMOS technology. The work involves designing and analyzing the proposed detector to evaluate its performance and capabilities wit... 详细信息
来源: 评论
Vertical Channel Transistor (VCT) for Advanced Logic and Memory Applications  17
Vertical Channel Transistor (VCT) for Advanced Logic and Mem...
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17th ieee international conference on Solid-State and integrated circuit technology, ICSICT 2024
作者: Shi, Mingmin Bi, Ran Li, Ming School of Integrated Circuits Peking University 100871 China Beijing Advanced Innovation Center for Integrated Circuits 100871 China
With the device feature size scaling down continuously, vertical channel transistor (VCT) becomes promisingly attractive for IC manufacturing thanks to its structural benefits in decoupling gate patterning and junctio... 详细信息
来源: 评论