The proceedings contain 606 papers. The topics discussed include: new industrialization and integratedcircuits industry in the mainland of China;directions for silicon technology as we approach the end of CMOS scalin...
ISBN:
(纸本)9781424457984
The proceedings contain 606 papers. The topics discussed include: new industrialization and integratedcircuits industry in the mainland of China;directions for silicon technology as we approach the end of CMOS scaling;self-powered nanosystem: from nanogenerators to piezotronics;technologies for embedded processors and applications for intelligent control;system architecture, design/circuit and technology optimization for advanced mobile wireless devices;challenge and opportunity in circuit simulation and verification;mobility enhancement in silicon nanowire transistors;wafer-level magnetotransport measurement of advanced transistors - making a powerful technique even more powerful;future of nanoelectronics at the end of the roadmap and beyond;silicon photonics technologies for monolithic electronic-photonic integratedcircuit applications;and source/drain and gate engineering on Si nanowire transistors with reduced parasitic resistance and strained silicon channel.
The proceedings contain 472 papers. The topics discussed include: an optimization algorithm for pre-bond TSV probing tests and fault localization;a prebond TSV test scheme using oscillator;improved crystallinity of ul...
ISBN:
(纸本)9781467397179
The proceedings contain 472 papers. The topics discussed include: an optimization algorithm for pre-bond TSV probing tests and fault localization;a prebond TSV test scheme using oscillator;improved crystallinity of ultra-thin amorphous film by 2D-limited regrowth: process and characterization;wafer level chip scale packing for Si-based driver application;Si-based horizontal InAs nanowire transistors;study on neutron radiation effect of FinFET SRAM;research of transient radiation effects on FinFET SRAMs compared with planar SRAMs;AND investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN schottky barrier diodes.
The proceedings contain 426 papers. The topics discussed include: research on design and test method of high performance 6 input LUT;performance enhancement by gate tunable strain in p-type piezoelectric FinFETs;a low...
ISBN:
(纸本)9781538644409
The proceedings contain 426 papers. The topics discussed include: research on design and test method of high performance 6 input LUT;performance enhancement by gate tunable strain in p-type piezoelectric FinFETs;a low power and wideband 28-41GHz PLL design for mm-wave applications;method for practical use of parasitic capacitances of reference current sources in dual-input-stages for increasing the SR of operational amplifiers in inverting connection circuits;studies on ReRAM conduction mechanism and the varying-bias read scheme for MLC and wide temperature range TMO ReRAM;TCAD based design technology co-optimization in advanced CMOS technology;impact of process imperfection of CNFET on circuit-level performance and proposal to improve using approximate circuits;and implementing RISCV system-on-chip for acceleration of convolution operation and activation function based on FPGA.
The proceedings contain 536 papers. The topics discussed include: evolving challenges and techniques for nanometer SoC clock network synthesis;a security coprocessor embedded system-on-chip architecture for smart mete...
ISBN:
(纸本)9781479932962
The proceedings contain 536 papers. The topics discussed include: evolving challenges and techniques for nanometer SoC clock network synthesis;a security coprocessor embedded system-on-chip architecture for smart metering, control and communication in power grid;the threshold voltages of low temperature polycrystalline silicon thin film transistors;toward 0.1V operation of mosfets for ultra-low power applications;GaN-based metal-oxide-semiconductor field-effect transistors;realization of GaN-based mGH frequency planar schottky barrier diodes through air-bridge technology;silicon-migration technology for mems-cmos monolithic integration;design challenges of high speed ADC in CMOS technology for next generation optical communication applications;and 10 years of transistor innovations in system-on-chip (SoC) era.
The proceedings contain 281 papers. The topics discussed include: an integrated SoC for image processing in space flight instruments;performance enhancement of ATZO TFTs by component control and post treatment;a novel...
ISBN:
(纸本)9781728162355
The proceedings contain 281 papers. The topics discussed include: an integrated SoC for image processing in space flight instruments;performance enhancement of ATZO TFTs by component control and post treatment;a novel HSPICE model for dual-threshold independent-gate TFET;impacts of lateral charge migration on data retention and read disturb in 3D charge-trap NAND flash memory;a simple and efficient fuse-trimming circuit for analog design;a two-ASIC front-end for MEMS accelerometers;an ultra-low-voltage single-phase adaptive pulse latch with redundant toggling elimination;MF-Conv: a novel convolutional approach using bit-resolution-based weight decomposition to eliminate multiplications for CNN acceleration;a wafer map defect pattern classification model based on deep convolutional neural network;and a lightweight CNN for low-complexity HEVC intra encoder.
The proceedings contain 298 papers. The topics discussed include: sharp-switching devices with positive feedback mechanisms based on silicon-on-insulator substrate;impact of nanosheet pitch, ambient temperature, and t...
ISBN:
(纸本)9781665469067
The proceedings contain 298 papers. The topics discussed include: sharp-switching devices with positive feedback mechanisms based on silicon-on-insulator substrate;impact of nanosheet pitch, ambient temperature, and thermal contact resistance on electrothermal characteristics of vertical gate-all-around nanosheet FETs;bias temperature instability analysis of nanosheet based SRAM;parallel dual-gate thin-film transistors for sensing and neuromorphic computing;a micro transfer-printer for high-accuracy optoelectronic and photonic integration;silicon nanowire transistor integrated with phase change gate;a new type of homogenization field power semiconductor devices;ultralow loss lateral insulated gate bipolar transistor with U-shape trench anode;a novel approach to suppress the inhomogeneous reverse recovery behavior of the body diode in superjunction MOSFET;a novel full tun-on reverse-conducting IGBT with enhanced carrier concentration modulation in collector side;and a novel insulating-pillar superjunction with vertical insulators: breakthrough of specific ON-resistance limit.
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for le...
ISBN:
(纸本)9798350361834
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for leakage suppression and strain enhancement in gate-all-around nanosheet FETs;high performance termination design and fabrication For SiC MOSFET device;a blocker-tolerant high-linear receiver employing baseband noise-cancelling and bottom-plate switched-capacitor techniques;vanadium oxide-based artificial synapses for construction of artificial neural system;pseudo-parallel symmetrical and crossed perovskite solar cells for bifacial applications;deep investigation into variability of complementary dopant segregated tunneling FET based on foundry platform;and a dual-gate trigger thyristor for reducing the probability of false triggering.
The proceedings contain 467 papers. The topics discussed include: a supervised ANN method for memory failure signature classification;a cot-effective design of non-linear modulation profile for spread spectrum clock;a...
ISBN:
(纸本)9781467324724
The proceedings contain 467 papers. The topics discussed include: a supervised ANN method for memory failure signature classification;a cot-effective design of non-linear modulation profile for spread spectrum clock;a 25-28Gbps clock and data recovery system with embedded equalization in 65-nm CMOS;WIPAL: window-based parallel layout decomposition in double patterning lithography;characterizing, modeling, and simulating soft error susceptibility in cell-based designs in highly scaled technologies;a direct digital frequency synthesizer based on optimized two segment sixth-order polynomial approximation;an advanced embedded flash technology for broad market applications;comparison of local programming method for multi-bit/level 90nm SONOS memory;a power and area efficient CMOS charge-pump phase-locked loop;a positive-peak detector with adaptive micro-current compensator for wideband VCOs;and study of the disturb in SONOS memory.
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