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Design and Evaluation of Laminated Busbar for Three-Level T-Type NPC Power Electronics Building Block With Enhanced Dynamic Current Sharing

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ieee journal OF emerging AND selected topics IN POWER ELECTRONICS 2020年第1期8卷 395-406页

作者： Yuan, Zhao Peng, Hongwu Deshpande, Amol Narayanasamy, Balaji Emon, Asif Imran Luo, Fang Chen, Cai Univ Arkansas Coll Engn Fayetteville AR 72701 USA Huazhong Univ Sci & Technol Sch Elect & Elect Engn Wuhan 430074 Peoples R China

This article focuses on providing the laminated busbar design guidance for a three-level T-type neutral-point-clamped (3L-TNPC) inverter to achieve low stray inductance and balanced inductance distribution between paralleled power switches. As a result, equalized dynamic current sharing can be accomplished. To discover the design strategy, this article first derives the mutual-inductance-decoupled equivalent circuit for 3L-TNPC. Then, the effects of each inductance item on switching performance can be unveiled, and the parametric targets are then summarized. Accordingly, the busbar design considerations are discussed. A step-by-step busbar design procedure to achieve the aforementioned design targets is provided in the next. The design procedure starts from 2-D optimization to achieve the optimal component and terminal allocation, and then, it increases the optimization degree to 3-D. Using this design procedure, we proposed a novel double-side-end busbar structure to achieve the busbar stray inductance of 12.7 nH and the inductance differences between the paralleled switches to be less than 2 nH. Extensive experiments are carried out in the end to evaluate the design procedure and demonstrate the performance of the busbar.

关键词： Inductance Equivalent circuits Inverters Optimization Legged locomotion Integrated circuit modeling Current sharing laminated busbar SiC MOSFET stray inductance three-level T-type neutral-point-clamped (3L-TNPC) inverter

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An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs

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ieee journal OF emerging AND selected topics IN POWER ELECTRONICS 2020年第1期8卷 99-110页

作者： Kozak, Joseph P. Barchowsky, Ansel Hontz, Michael R. Koganti, Naga Babu Stanchina, William E. Reed, Gregory E. Mao, Zhi-Hong Khanna, Raghav Virginia Tech Ctr Power Elect Syst Blacksburg VA 24061 USA NASA Jet Prop Lab Power Subsyst Engn Dept Pasadena CA 91109 USA Naval Surface Warfare Ctr Philadelphia PA USA Gen Motors Plymouth MI USA Univ Pittsburgh Elect & Comp Engn Dept Pittsburgh PA 15261 USA Univ Toledo Dept Elect Engn & Comp Sci Toledo OH 43606 USA

Recently, a major challenge in the adoption of wide bandgap semiconductors for power electronic applications is the need to trade device performance for device safety. In this article, methods for predicting gate voltage overshoot in normally-OFF gallium nitride (GAN) high electron mobility transistors (HEMTs) are derived in order to deliver optimal device performance. Two models are proposed;a simple, yet less accurate second order model and a complex, yet more accurate fourth order model. These models allow for the calculation of gate resistances necessary for a desired amount of gate voltage overshoot. The nonlinear capacitances of the device are considered in the analysis. The models are validated with an experimental double-pulse tester. These newly developed models allow design engineers to extract the best possible performance of commercially available GaN devices while keeping the devices in their safe-operating region.

关键词： Logic gates Gallium nitride Capacitance Integrated circuit modeling Power electronics Analytical models Switching circuits Gate-driving circuits semiconductor device modeling switching transients wide bandgap semiconductors

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Analysis and Design of Multiphase, Reconfigurable Switched-Capacitor Converters

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ieee journal OF emerging AND selected topics IN POWER ELECTRONICS 2020年第4期8卷 4046-4059页

作者： Krstic, Marko Eren, Suzan Jain, Praveen Queens Univ Kingston ON K7L 3N6 Canada Genopt LED Inc Calgary AB T2C 5C3 Canada Queens Univ Dept Elect & Comp Engn Kingston ON K7L 3N6 Canada

A comprehensive framework for the analysis and design of multiphase, reconfigurable switched-capacitor (SC) dc-dc converters is presented. A generalized method, utilizing graph theory and network analysis, is first proposed, which enumerates all attainable ideal conversion ratios for a given SC converter structure. From this analysis, the performance limits of multiphase SC converters are expanded, and a reconfigurable, multiphase SC dc-dc converter is proposed. The converter utilizes a programmable and optimized switching configuration that can generate an increased number of attainable ideal conversion ratios for the given number of capacitors and switching states. This property allows the converter to maintain high efficiency across a wide range of operating conditions and achieve very high step-up and step-down conversion ratios. A set of sample switching sequences are provided to generate any attainable ideal conversion ratio, for up to four capacitors, using a minimal number of switching states. An experimental prototype of the converter has been designed and fabricated as an integrated circuit using 0.35-mu m CMOS technology to validate the performance.

关键词： DC-DC power converters network analysis switched capacitor (SC) circuits

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Single-Phase Voltage Source Inverter With Voltage Boosting and Power Decoupling Capabilities

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ieee journal OF emerging AND selected topics IN POWER ELECTRONICS 2020年第3期8卷 2977-2988页

作者： Xu, Shuang Chang, Liuchen Shao, Riming Univ New Brunswick Emera & NB Power Res Ctr Smart Grid Technol Fredericton NB E3B 5A3 Canada Alpha Technol Inc Bellingham WA 98226 USA

This article proposes a single-phase bridge inverter with both voltage boosting and power decoupling capabilities. The proposed inverter topology diverts the second-order ripple power into a small film capacitor instead of using a bulky electrolytic capacitor at the dc side, thus eliminating the large electrolytic capacitor that has a short lifetime. The voltage across the decoupling capacitor is controlled as a dc-biased sine wave to cancel out the second-order ripple power originated from the single-phase grid power, and the dc offset in the decoupling capacitor is used to boost the dc-link voltage, as opposed to being under-utilized in previous dc voltage-reference power decoupling techniques. The proposed topology also maintains the advantages of the traditional bridge inverters with the unipolar sinusoidal pulsewidth modulation technique. Moreover, the output filter and power decoupling control method are designed for the proposed inverter. Finally, the simulation and experimental results verify the feasibility of the proposed topology and control algorithm, which show successful voltage boosting and power decoupling functions.

关键词： Capacitors Inverters Bridge circuits Inductors Voltage control Topology Bridge inverter power decoupling second-order ripple single-phase inverters voltage boost

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Nanophotonic Cavity Based Synapse for Scalable Photonic Neural Networks

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ieee journal OF selected topics IN QUANTUM ELECTRONICS 2022年第6期28卷 1页

作者： Jha, Aashu Huang, Chaoran deLima, Thomas Ferreira Peng, Hsuan-Tung Shastri, Bhavin Prucnal, Paul R. Princeton Univ Dept Elect & Comp Engn Princeton NJ 08544 USA Chinese Univ Hong Kong Dept Elect Engn Hong Kong Peoples R China NEC Labs Amer Princeton NJ 08542 USA PsiQuantum Palo Alto CA 94304 USA Queens Univ Dept Phys Engn Phys & Astron Kingston ON K7L 3N6 Canada

The bandwidth and energy demands of neural networks has spurred tremendous interest in developing novel neuromorphic hardware, including photonic integrated circuits. Although an optical waveguide can accommodate hundreds of channels with THz bandwidth, the channel count of photonic systems is always bottlenecked by the devices within. In WDM-based photonic neural networks, the synapses, i.e. network interconnections, are typically realized by microring resonators (MRRs), where the WDM channel count (N) is bounded by the free-spectral range of the MRRs. For typical Si MRRs, we estimate N <= 30 within the C-band. This not only restrains the aggregate throughput of the neural network but also makes applications with high input dimensions unfeasible. We experimentally demonstrate that photonic crystal nanobeam based synapses can be FSR-free within C-band, eliminating the bound on channel count. This increases data throughput as well as enables applications with high-dimensional inputs like natural language processing and high resolution image processing. In addition, the smaller physical footprint of photonic crystal nanobeam cavities offers higher tuning energy efficiency and a higher compute density than MRRs. Nanophotonic cavity based synapse thus offers a path towards realizing highly scalable photonic neural networks.

关键词： Photonic integrated circuits photonic neural networks

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Maximum Efficiency Tracking Control Method for WPT System Based on Dynamic Coupling Coefficient Identification and Impedance Matching Network

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ieee journal OF emerging AND selected topics IN POWER ELECTRONICS 2020年第4期8卷 3633-3643页

作者： Liu, Yuanyuan Feng, Hongwei Jiangnan Univ Inst Automat Sch Internet Things IoT Engn Wuxi 214122 Jiangsu Peoples R China Wuxi Vocat Coll Sci & Technol Wuxi 214028 Jiangsu Peoples R China Wuxi Inst Technol Sch Control Technol Wuxi 214121 Jiangsu Peoples R China

Transfer efficiency (TE) is an important research topic in the practical application of a wireless power transfer (WPT) system. WPT system is a loosely coupled system;the coupling coefficient changes drastically due to the relative movement of the transmitting and receiving sides. It is difficult to achieve maximum efficiency tracking (MET) only from the research of frequency tracking, impedance matching, and system parameters under a fixed coupling coefficient. This article proposes a novel MET control method of the WPT system with optimized T-type impedance matching network under the real-time identification of a coupling coefficient to realize the MET control. This method synthetically analyzes the nonlinearity of the rectifier circuit, the identification of coupling coefficient, the variation of load resistor, and the controllability of the output voltage, involving the main factors of the MET control. The simulation and experimental results show that the WPT system has a good performance on MET and constant output voltage control;the validity and accuracy of the proposed MET control method are consistently verified.

关键词： Impedance matching Couplings Rectifiers Impedance Voltage control Resistance Bridge circuits Coupling coefficient identification impedance matching network maximum efficiency tracking (MET) wireless power transfer (WPT)

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Photonic Generation of Multi-Format Radar Waveforms Based on an Integrated Silicon IQ Modulator

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ieee journal OF selected topics IN QUANTUM ELECTRONICS 2022年第5期28卷 1页

作者： Wang, Lu Zhang, Yuguang Wang, Dong Hao, Tengfei Chong, Yuhua Gu, Yiying Li, Guangyi Li, Ming Xiao, Xi Zhu, Ninghua Li, Wei Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China Univ Chinese Acad Sci Sch Elect Elect & Commun Engn Beijing 100049 Peoples R China Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100190 Peoples R China China Informat & Commun Technol Grp Corp CICT Natl Informat Optoelect Innovat Ctr Wuhan 430074 Peoples R China China Informat & Commun Technol Grp Corp CICT State Key Lab Opt Commun Technol & Networks Wuhan 430074 Peoples R China China Elect Technol Grp Corp Res Inst 38 Hefei 230000 Peoples R China Dalian Univ Technol Sch Optoelect Engn & Instrumentat Sci Dalian 116024 Peoples R China

We propose and demonstrate a photonic scheme to generate reconfigurable radar waveforms based on an integrated silicon in-phase and quadrature-phase (IQ) modulator. It has significant advantages over commercial LiNbO3 modulator-based schemes in terms of the compatibility with CMOS technology, compact size, light weight, low cost and low power consumption. Experimentally, multi-format radar waveforms, including dual-chirp microwave waveforms, phase-shift keying signals, and amplitude-shift keying signals are successfully generated. The generated waveforms have flexible tunability of center frequency and bandwidth. Our scheme shows the great potential of an on-chip scheme to generate multi-format microwave waveforms for modern radars and electronic warfare systems.

关键词： Radio frequency Modulation Microwave photonics Radar Microwave theory and techniques Microwave integrated circuits Microwave circuits Microwave photonics integrated modulator radar waveforms pulse compression

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III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated circuits

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ieee journal OF selected topics IN QUANTUM ELECTRONICS 2020年第2期26卷

作者： Ramirez, Joan Manel Elfaiki, Hajar Verolet, Theo Besancon, Claire Gallet, Antonin Neel, Delphine Hassan, Karim Olivier, Egolene Jany, Christophe Malhouitre, Stephane Gradkowski, Kamil Morrissey, Padraic E. OBrien, Peter Caillaud, Christophe Vaissiere, Nicolas Decobert, Jean Lei, Shenghui Enright, Ryan Shen, Alexandre Achouche, Mohand III V Lab F-91767 Palaiseau France CEA Leti F-38054 Grenoble France Tyndall Natl Inst Cork T12 R5CP Ireland Nokia Bell Labs Ireland Dublin 15 Ireland

Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical systems that go beyond single device performance. Recent advances on the field are expected to impact the next generation of optical communications to attain low power, high efficiency and portable solutions. To accomplish this aim, intense research on hybrid lasers, modulators and photodetectors is being done to implement optical modules and photonic integrated networks with specifications that match the market demands. Similarly, important advances on packaging and thermal management of hybrid photonic integrated circuits (PICs) are currently in progress. In this paper, we report our latest results on hybrid III-V on Si transmitters, receivers and packaged optical modules for high-speed optical communications. In addition, a review of recent advances in this field will be provided for benchmarking purposes.

关键词： Silicon Photonics Bonding High-speed optical techniques Epitaxial growth Optical transmitters Indium phosphide III-V on SOI photonic integrated circuits hybrid integrated lasers on-chip silicon transmitters and receivers thermal management silicon photonics packaging

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ieee circuits and systems Society Information

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ieee journal on emerging and selected topics in circuits and systems 2022年第3期12卷 C3-C3页

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

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ieee circuits and systems Society Information

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ieee journal on emerging and selected topics in circuits and systems 2022年第4期12卷 C3-C3页

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

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