The proceedings contain 44 papers. The topics discussed include: a new aspect of plasma-induced physical damage in three-dimensional scaled structures;random telegraph noise as a new measure of plasma-induced charging...
ISBN:
(纸本)9781479921539
The proceedings contain 44 papers. The topics discussed include: a new aspect of plasma-induced physical damage in three-dimensional scaled structures;random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs;ALD ZrO2 processes for BEoL device applications;pathfinder3D: a framework for exploring early thermal tradeoffs in 3DIC;a brief introduction on contemporary high-level synthesis;bio-integrated electronics;characterization and modeling of charge trapping: from single defects to devices;robust low-power reconfigurable computing with a variation-aware preferential design approach;assessing device reliability through atomic-level modeling of material characteristics;piezoelectric soft MEMS for tactile sensing and energy harvesting;and understanding timing impact of BTI/RTN with massively threaded atomistic transient simulations.
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for le...
ISBN:
(纸本)9798350361834
The proceedings contain 304 papers. The topics discussed include: improved channel width and morphology of Epi silicon FinFET via low thermal budgets fin thinning technology;reverse-biased PN junction isolation for leakage suppression and strain enhancement in gate-all-around nanosheet FETs;high performance termination design and fabrication For SiC MOSFET device;a blocker-tolerant high-linear receiver employing baseband noise-cancelling and bottom-plate switched-capacitor techniques;vanadium oxide-based artificial synapses for construction of artificial neural system;pseudo-parallel symmetrical and crossed perovskite solar cells for bifacial applications;deep investigation into variability of complementary dopant segregated tunneling FET based on foundry platform;and a dual-gate trigger thyristor for reducing the probability of false triggering.
The proceedings contain 33 papers. The topics discussed include: an improved small signal model of a MOS transistor in millimeter wave band considering longitudinal distributed effects;YogurtNet: enhanced machine lear...
The proceedings contain 33 papers. The topics discussed include: an improved small signal model of a MOS transistor in millimeter wave band considering longitudinal distributed effects;YogurtNet: enhanced machine learning approach for voltage drop prediction;a charge pump phase-locked loop with low phase noise based on ring oscillator;anti-pollution intelligent window control system based on air detection;a study of the effects on human electrostatic discharge current waveform verification;an adaptive analog front-end for action potential detection;study of general framework of ferroelectric transistors-based reservoir computing platform;validation of an electronic transformer electromagnetic nuisance online monitoring system in a true type platform;a wideband readout charge amplifier for superconducting nanowire single photon detector;and bending mechanics simulation and device fabrication for module stacking design of flexible micro-LEDs.
The proceedings contain 22 papers. The topics discussed include: Cortex-M0+-based pacemaker: CMOS technologies benchmark to achieve ultra-low power operations;analysis and design of an innovative 19.5 GHz active phase...
ISBN:
(纸本)9798350316957
The proceedings contain 22 papers. The topics discussed include: Cortex-M0+-based pacemaker: CMOS technologies benchmark to achieve ultra-low power operations;analysis and design of an innovative 19.5 GHz active phase shifter architecture, implemented in a 0.13 m BiCMOS SiGe: C process, for beamforming in 5G applications;fusion with EEG signals and Images for closed or open eyes detection using deep learning;HealthBeat traceability platform based on blockchain technology;static nonlinear errors compensation for RF front-end circuit on high speed RF sampling (Ti)ADCs;design techniques for reference clock jitter optimization for high speed PHYs;simulation improvements, challenges solutions while using DTL, signal access DebuggerDB optimization, PC, TC, save-restore;and novel and scalable instantaneous voltage drop based scan methodology.
The proceedings contain 37 papers. The topics discussed include: fault tolerant design for memristor-based AI accelerators;design enhancement of folded beams attachment for mems-based triaxial accelerometer;LDO compar...
ISBN:
(纸本)9798350363128
The proceedings contain 37 papers. The topics discussed include: fault tolerant design for memristor-based AI accelerators;design enhancement of folded beams attachment for mems-based triaxial accelerometer;LDO comparison with new push-pulled flipped voltage follower topology for transient response improvement;punch-through variability in buried channel transistors;machine learning-based feasibility estimation of digital blocks in BCD technology;testing ReRAM-based TCAM for computation-in-memory applications;structure for characterization of MOS transistors in 28FD-SOI technology;embedded feature selection in MCU performance screening;and extreme temperature automotive testing.
The proceedings contain 36 papers. The topics discussed include: design of mask recognition and temperature monitoring system;a fast and low power consumption crystal oscillator driving circuitdesign;development of a...
The proceedings contain 36 papers. The topics discussed include: design of mask recognition and temperature monitoring system;a fast and low power consumption crystal oscillator driving circuitdesign;development of a high-temperature piezoelectric ultrasonic transducer based on a glass substrate;design of a multi-modulus divider with a wide frequency dividing range and low power consumption;the surface ligands of PbSe colloidal quantum dots towards the high-performing infrared photodetection;a thermal resistance detection of heteromorphic devices using SiC diode's temperature-sensitive parameters;a fast-transient responses power-efficiency LDO regulator with transient-current enhanced buffer;design and implementation of microcirculation cooling device for microelectronic devices based on electrostatic force;frequency band broadening of piezoelectric ultrasonic transducer using multifrequency impedance network coupling method;a high peak-efficiency cross-coupled charge pump with low input voltage for energy harvesting system;FPGA-based implementation of reverse electrical pulse stress and measurement system for gallium nitride high-electron-mobility transistors;and suppression of crosstalk in quantum computers based on instruction exchange rules and duration.
The proceedings contain 20 papers. The topics discussed include: design and implementation of a dynamic task mapping algorithm based on hotspot statistics;design and optimization of metal cavity bandpass filter and fr...
The proceedings contain 20 papers. The topics discussed include: design and implementation of a dynamic task mapping algorithm based on hotspot statistics;design and optimization of metal cavity bandpass filter and fragmented patch antenna by combining simulation software and genetic algorithm;implementation of fast measurement system of semiconductor device parameter temperature coefficient based on FPGA;optimization method of microwave devices based on improved extreme learning machine;a wireless power transmission system with high misalignment tolerance and high efficiency for autonomous underwater vehicles;a fourth-order dielectric narrow-band bandpass filter using coaxial resonator;multi-scale cooperative search simplified particle swarm optimization algorithm and performance analysis;and an improved particle swarm optimization algorithm for unmanned aerial vehicle route planning.
A broadband monolithic millimeter-wave transceiver multi-function chip (MFC) operating from 24 to 33 GHz has been developed based on the GaN-on-Si technology. This chip is composed of three modules: a single-pole doub...
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ISBN:
(纸本)9798331517137;9798331517144
A broadband monolithic millimeter-wave transceiver multi-function chip (MFC) operating from 24 to 33 GHz has been developed based on the GaN-on-Si technology. This chip is composed of three modules: a single-pole double-throw (SPDT) switch, a low-noise amplifier (LNA), and a power amplifier (PA) with a total surface area of 4.5x3 mm(2). In the transmit-mode (Tx), the chip achieves a saturated output power greater than 33 dBm with a power-added efficiency (PAE) exceeding 23.8%. In the receive-mode (Rx), the chip exhibits a noise figure less than 2.7 dB and a small signal gain greater than 18 dB.
Cell-to-pack (CTP) is the prevailing method for EV battery assembly due to its compact size, cost-effectiveness, streamlined assembly with fewer connections, and enhanced reliability. The primary challenges in Battery...
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ISBN:
(纸本)9798331517137;9798331517144
Cell-to-pack (CTP) is the prevailing method for EV battery assembly due to its compact size, cost-effectiveness, streamlined assembly with fewer connections, and enhanced reliability. The primary challenges in Battery Monitoring ICs (BMIC) for CTP lie in supporting more series-connected monitoring cells and achieving greater measurement precision. This presentation outlines how Auto Power-SOI technology facilitates the development of advanced BMICs that excel in precision, integrate high and low voltage components on a single die, and meet stringent functional safety demands, addressing the evolving needs of CTP technology in EV batteries.
Isolation capacitors are widely used in high-voltage systems to protect low-voltage circuits and ensure user safety. However, the electric field at the edges of the capacitor is much larger than in the center, which m...
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ISBN:
(纸本)9798331517137;9798331517144
Isolation capacitors are widely used in high-voltage systems to protect low-voltage circuits and ensure user safety. However, the electric field at the edges of the capacitor is much larger than in the center, which makes the edge structure prone to breakdown, thus affecting its voltage withstand performance. We control the distribution of the electric field by altering the design of the capacitor's metal plates to reduce the maximum field strength and achieve more uniform distribution of the electric field.
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