Wurtzite-type ferroelectric material, such as e.g., AlScN, has attracted considerable attention to fabricate new electronic devices for its large remanent polarization (70-120 mu C/cm(2)), the integration compatibilit...
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ISBN:
(纸本)9798331517137;9798331517144
Wurtzite-type ferroelectric material, such as e.g., AlScN, has attracted considerable attention to fabricate new electronic devices for its large remanent polarization (70-120 mu C/cm(2)), the integration compatibility with back-end-of-line (BEOL) process, and dimensional scaling. In this work, the high-quality ferroelectric Al0.73Sc0.27N film has been prepared and Cu/Al0.73Sc0.27N/Pt memristors array was fabricated. The device exhibits volatile threshold switching (TS) characteristics. In addition, its synaptic plasticity has been studied by applying pulse stimulation. This work is meaningful for the development of neuromorphic computing based on ferroelectric memristors.
This work presents the temperature dependence in the coercive field (E-c) of ferroelectric Al0.8Sc0.2N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric-semiconductor (MFS) capacitor shows a ...
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ISBN:
(纸本)9798331517137;9798331517144
This work presents the temperature dependence in the coercive field (E-c) of ferroelectric Al0.8Sc0.2N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric-semiconductor (MFS) capacitor shows a remnant polarization (P-r) exceeding 143 mu C/cm(2) and E-c of 8 MV/cm at 300 K. Furthermore, both the maximum E-c (E-c, (max)) and the concentrated E-c (E-c, (con)) exhibit a linear decrease with a temperature coefficient of - 0.0126 MV/cm.K as the temperature increases. These results provide a reference for the prediction of variable temperature in wurtzite ferroelectric memory.
This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode st...
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ISBN:
(纸本)9798331517137;9798331517144
This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode structure to achieve higher output power, better reverse isolation and stability. The two-stage differential cascade structure, combined with the transformer for good circuit matching, improves the overall circuit gain. At the same time, the cross-coupling capacitor is used to neutralize the Miller effect, and the negative feedback is introduced to further improve the circuit stability. Measurements of the PA show a 3dB-bandwith of the output power from 18GHz to 40GHz. The maximum output power is 17.8dBm at 1dB-compression-point (P1dB) and 18.9dBm in saturation. Togeher with the peak gain of 20 dB high power added efficiencies (PAEs) of 10% in saturation are achieved.
The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching thei...
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ISBN:
(纸本)9798331517137;9798331517144
The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of SiNx and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.
Today's on-chip computing power is hindered by the "memory wall", "power wall" and Von Neumann bottleneck. As one promising solution, a field effect (FE) oxide resistive switching memory device...
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ISBN:
(纸本)9798331517137;9798331517144
Today's on-chip computing power is hindered by the "memory wall", "power wall" and Von Neumann bottleneck. As one promising solution, a field effect (FE) oxide resistive switching memory device (RRAM) based memorable logic gates have been developed in this work. Based on the fabricated three terminal RRAM, the polynomial control source (PCS) based compact circuit model is proposed to describe the devices' behavior. The FE-RRAM could be regarded as a non-volatile transmission gate. In addition, a memorable logic gates with an input storage function has been designed using only 2 FE-RRAMs. It shows that the memorable logic gates have great potential in the applications of computing- in-memory.
In this paper, a step-down converter chip with high conversion efficiency is designed based on silicon- based gallium nitride heterogeneous integration technology. Among them, the GaN HEMT uses EPC2036 FET bare die, t...
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ISBN:
(纸本)9798331517137;9798331517144
In this paper, a step-down converter chip with high conversion efficiency is designed based on silicon- based gallium nitride heterogeneous integration technology. Among them, the GaN HEMT uses EPC2036 FET bare die, the control circuit adopts the TSMC 0.25um BCD process for research and design, and the pulse width modulation and voltage mode control are used to design the overall system. The simulation results show that the switching frequency of the buck converter is 1MHz, the input voltage is 48V, the output voltage is 3.3V similar to 5V, the output power is 3.6W at full load, and the maximum conversion efficiency is 93.7% when the output voltage is 5V. The chip designtechnology is suitable for miniaturized vehicle power converter and other applications.
This paper presents an area-efficient rail-to-rail input and output operational amplifier (op-amp). The presented amplifier consumes 120 mu W from a 1.2 V supply and implements gain boosting [1] to achieve high open-l...
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ISBN:
(纸本)9798331517137;9798331517144
This paper presents an area-efficient rail-to-rail input and output operational amplifier (op-amp). The presented amplifier consumes 120 mu W from a 1.2 V supply and implements gain boosting [1] to achieve high open-loop voltage gain (> 115 dB) despite being designed on a 55 nm BCD process. By leveraging Miller and damping-factor-control frequency compensation (DFCFC) [2] techniques, the presented amplifier is shown to be unity-gain stable and capable of driving capacitive loads up to 200 pF, making it suitable for use as an output line driver for monitoring internal nets of an IC. Furthermore, a constant-transconductance input stage is employed to obtain good linearity: 0.022 % THD.
This paper introduces a fully integrated miniature temperature sensor based on CMOS technology for passive Radio Frequency Identification (RFID) tags. The sensor has a simple architecture that consists of a sensing ci...
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ISBN:
(纸本)9798350384406
This paper introduces a fully integrated miniature temperature sensor based on CMOS technology for passive Radio Frequency Identification (RFID) tags. The sensor has a simple architecture that consists of a sensing circuit, currentcontrolled oscillators (CCO), a Control circuit, and a frequency to digital converter(FDC). Moreover, it is designed without using any current, voltage, or clock reference circuits and operate in sub-threshold region to minimize the power consumption. The proposed temperature sensor is realized in a standard 0.18 mu m CMOS technology with an active area of 0.018 mm2. With a supply voltage of 0.5V, the sensor has a power consumption of 542.2 nw with a resolution of 0.14. C. Furthermore, the experimental results illustrate that the proposed work attains an accuracy of -1.58 /+1.38. C across -40. C to 125.C temperature range and a Resolution FoM of 1.06 pJ.K2.
The carrier scattering mechanisms of mobility degradation in ultrathin body (UTB) SOI pMOSFETs have been experimentally investigated using different channel thicknesses. It is confirmed that, when the Si layer thickne...
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ISBN:
(纸本)9798331517137;9798331517144
The carrier scattering mechanisms of mobility degradation in ultrathin body (UTB) SOI pMOSFETs have been experimentally investigated using different channel thicknesses. It is confirmed that, when the Si layer thickness is between 2 nm and 5 nm, the hole mobility constrained by phonon scattering (mu ph) exhibits a marked reduction as the thickness diminishes, while the thickness fluctuation scattering limited mobility (mu tf) still exhibits a traditional dependence of TSi6. However, as the Si thickness decreases further, the hole mobility becomes predominantly governed by thickness fluctuation scattering. These findings offer a revised model to enhance the understanding of carrier transport in thin-channel Si devices, crucial for future advanced technology nodes.
Fabrication technologies of 6-inch GaN-on-Si wafers for monolithic microwave integratedcircuits (MMICs) have been developed. The high electron mobility transistor (HEMT) with a T-shape gate with a foot length Lg of 0...
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ISBN:
(纸本)9798331517137;9798331517144
Fabrication technologies of 6-inch GaN-on-Si wafers for monolithic microwave integratedcircuits (MMICs) have been developed. The high electron mobility transistor (HEMT) with a T-shape gate with a foot length Lg of 0.5 mu m and width of 4x100 mu m shows a maximum drain current (I-dmax) of 600 mA/mm, a peak transconductance (gmmax) of 200 mS/mm, and a cut-off frequency/a maximum oscillation frequency (f(T)/f(max)) of 18/27 GHz. Large-signal load-pull measurement at a frequency of PW (100 mu s pulse width and 10 ms pulse period) 3.5 GHz and a drain voltage of 30 V showed a saturated output power density (Psat) of 4.2 W/mm, and a peak power-added efficiency (PAE) of 78%, respectively. We also compared the devices with different Wg. Compared to the device without field palte, the devices with source field plate (SFP) or gate field plate (GFP) show better DC and current collapse performance. In addition, passive devices like resistors, capacitors and spiral inductors were fabracited and their equivalent circuit models were established respectively to characterized the parasitic effects accurately. These results provide a viable alternative for low cost and large size-wafer GaN-on-Si fabrication of MMIC.
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