With beyond-CMOS circuit technologies emerging from scientific endeavors in an effort to outperform transistor-based logic in feature size, operation speed, and energy dissipation, it has become apparent that besides ...
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ISBN:
(纸本)9798350386257;9798350386240
With beyond-CMOS circuit technologies emerging from scientific endeavors in an effort to outperform transistor-based logic in feature size, operation speed, and energy dissipation, it has become apparent that besides their differences in physical implementations, their design automation techniques also have to evolve past established norms. While conventional logic synthesis aggressively optimizes the number of nodes in logic networks (as a proxy criterion for area, delay, and power improvements), this trope does not incorporate the additional costs caused by inverters and interconnects in the form of wire segments, signal splitters, and cross-over cells as imposed onto novel circuit implementations such as photonic crystals and field-coupled nanotechnologies. In this work, we propose a novel scalable technology mapping algorithm that captures these unconventional costs by utilizing subcircuit databases that are obtained by applying technology-aware exact physical design techniques. This overcomes the substantial quality loss that previously inevitably occurred when generating beyond-CMOS circuit layouts from conventionally optimized logic networks. Our method achieves average improvements of 84.5%, 74.5%, and 65.2% for the number of buffers, the number of crossings, and the critical path length, respectively, as compared to a state-of-the-art physical design algorithm for FCN circuits.
Cryptographic algorithms, despite their computational security, can inadvertently reveal critical information through side channels such as power consumption and electromagnetic radiation. For over two decades, the So...
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We report an integration and comprehensive study of the ozone SiO2/HfO2 interfacial layer (IL) on Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with HfO2/SiO2 IL, HfO2 IL and no IL were...
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ISBN:
(纸本)9798331517137;9798331517144
We report an integration and comprehensive study of the ozone SiO2/HfO2 interfacial layer (IL) on Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with HfO2/SiO2 IL, HfO2 IL and no IL were fabricated to study the roles of HfO2 and SiO2 as ILs. HZO FeFETs with ozone SiO2/HfO2 IL shows great advantages in offleakage, memory window (MW) and interface trap density, since the HfO2 layer can enhancement the polarization and the SiO2 IL is ideal for interface with Si and electrical isolation. As SiO2 IL greatly suppresses the interface traps, the degradation of MW and interface traps are also optimized with the ozone SiO2/HfO2 IL technique for endurance cycles at a level of 104, showing it an ideal IL engineering technique for the performance and reliability optimization of HfO2-based FeFETs.
This paper presents the application of a substrate-integrated waveguide (SIW) for the design of a leaky-wave antenna (LWA). The antenna radiates through a wide slot in the top wall of the SIW structure in the forward ...
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This paper presents the application of a substrate-integrated waveguide (SIW) for the design of a leaky-wave antenna (LWA). The antenna radiates through a wide slot in the top wall of the SIW structure in the forward direction. The effective width of the slot is varied by changing capacitances of two arrays of varactors connected between slot edges and inserted conducting strips. The radiation pattern of the antenna is by this way controlled by DC bias, which sets the capacitances of varactors. The maximum radiation direction in elevation can be varied within 35 degrees by changing the DC bias from 2 to 12 V. This elevation angle is measured from the broad side direction perpendicular to the antenna substrate. The measured antenna characteristics are in accord with those predicted by simulation. The antenna can be simply fabricated by a planar circuit board technology.
To facilitate the versatile use of flexible energy harvesters, this work discusses the design and characterization of a novel radio frequency (RF) to DC converter built in indium gallium zinc oxide (IGZO) thin film tr...
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ISBN:
(纸本)9798350383270;9798350383263
To facilitate the versatile use of flexible energy harvesters, this work discusses the design and characterization of a novel radio frequency (RF) to DC converter built in indium gallium zinc oxide (IGZO) thin film transistor (TFT) technology, developed to meet the energy requirements of near-field communication (NFC) and biomedical applications. The design uses a hybrid topology that combines the efficiency of a cross-coupled converter with the voltage-enhancing capabilities of Dickson charge pumps. This converter is designed to address the challenges of variable RF environments because of its dynamic adjustment technique involving self-biasing resistors and gate voltage-boosting capacitors. The circuit is implemented in a 600 nm TFT technology, and post-layout simulations verify that the circuit can achieve a peak power conversion efficiency (PCE) of 41.5 % at a load resistance of 906 k Omega and exhibiting sensitivity levels as low as -20 dBm. The compact area of 0.0127 mm(2) gives this circuit the potential for integration into disposable NFC tags and single-use biomedical devices where efficiency, size, and cost are key factors.
Customary low-voltage circuit breakers lack integrated chips, making them challenging to enhance with smart capabilities. However, with advancements in chip and data technology, it's now possible to incorporate el...
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Analog integratedcircuit (IC) design and its automation face challenges due to time-consuming computations and design complexity. Current automation falls short, necessitating a more accurate model and improved datas...
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ISBN:
(纸本)9798350385939;9798350385922
Analog integratedcircuit (IC) design and its automation face challenges due to time-consuming computations and design complexity. Current automation falls short, necessitating a more accurate model and improved dataset collection techniques. Transmitter and receiver in 6G Communication requires amplifiers like the Differential Amplifier (DiffAmp) and Two-Stage Operational Amplifier (OpAmp). This research utilizes Deep Neural Networks to introduce a novel architecture for enhanced prediction of circuit parameters. The significant characteristics of the proposed architecture includes enhanced circuit automation of both DiffAmp and OpAmp using a singular Machine Learning pipeline. A notable contribution is an efficient dataset acquisition technique. The methodologies achieve high accuracy, with 97.3% for DiffAmp and OpAmp.
On the basis of in-depth study of electronic engineering technology, this paper innovatively designed and realized a displacement signal acquisition system based on peak detection. This system solves the problem of re...
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In this paper, a high-impedance current source is developed to rapidly establish the output current. Under the framework of low bandwidth and large load capacitor, the output current can be quickly established by addi...
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High speed and large bandwidth with carrier frequencies higher than 100GHz are attractive for next-generation satellite communication and radar payload applications. The abundant spectrum resources in D-band could be ...
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ISBN:
(纸本)9798350389968
High speed and large bandwidth with carrier frequencies higher than 100GHz are attractive for next-generation satellite communication and radar payload applications. The abundant spectrum resources in D-band could be leveraged for high-resolution sensing and high data rate transmission. In this paper, a novel design of a D-band integrated low-loss planar duplexer is proposed, which overcomes the problem of the sharp increase of plane circuit loss caused by a high-frequency band. Furthermore, compared with CNC machined waveguide devices, the volume, and weight are reduced by tens of times. Simulation results show that using the micro- machined or micro-3D printing technology, the D-band duplexer could be integrated into the sub-millimeter system, which presents a good application prospect in the space industry.
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