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共 521 条记录，以下是431-440 订阅

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High performance design for InP-based strained-layer quantum well laser diodes

High performance design for InP-based strained-layer quantum...

引用

1995 International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures, PCMDLS 1995

作者： Yokoyama, Kiyoyuki Seki, Shunji NTT Opto-electronics Labs Atsugi Kanagawa243-01 Japan NTT Multimedia Systems Dept. Japan

ISBN: (纸本)0818673214

InP-based laser diodes (LDs) play an important role in opto-electronic integrated circuits and optical telecommunication systems. To achieve high performance characteristics, strained-layer multi-quantum well (SL-MQW) structures are commonly used. The authors believe that SL-MQW LDs are one of the useful devices among the lowdimensional devices proposed so far for actual applications. Design guidelines for these high performance devices with regard to low threshold, high-speed modulation, and high-temperature operation, are described based upon an understanding of the underlying physics. © 1996 IEEE.

关键词： High temperature operations

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A ray-based computational model of light sources and illumination

A ray-based computational model of light sources and illumin...

引用

proceedings of the workshop on physics-based modeling in computer vision

作者： M.S. Langer S.W. Zucker Centre for Intelligent Machines McGill University Montreal Canada

Models of light sources and illumination are fun damental in physics-based vision. Light sources have traditionally been modelled as objects that emit light, while illumination has been modelled as a radiance function defined over free space. The difficulty with traditional light source models is that, while a diverse collection of models exists, each is so specific that relationships between them, and between the algorithms based on them, are unclear. At the other extreme, models of spatial illumination have been so general that they have not provided sufficient constraint for vision. We seek to unify these two extremes by de veloping a ray-based computational model of light sources and illumination. sources and illumination. The model articulates strong constraints on the geometry and radiance of light rays in a scene, and expresses the relationship between free space, sources, and illumination. Appli cations of this model to problems in computer vision are discussed.

关键词： Lighting Light sources Layout Solids Light scattering Sun Image segmentation Extraterrestrial measurements Density measurement Particle measurements

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Logic design and quantum challenge

Logic design and quantum challenge

引用

International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： V.I. Varshavsky Department of Computer Hardware University of Aizu Aizu-Wakamatsu Japan

Is the design methodology of logical and computing structures ready to efficiently use new functional possibilities of quantum devices? Does the range of existing and suggested quantum devices provide effective design of logical and computing structures? With some examples, we discuss the possibility of obtaining positive answers to these questions uniting the efforts of physicists, technologists and experts in computer engineering. A number of hot points is outlined where this collaboration may be fruitful.

关键词： Logic design Quantum computing Voltage physics computing Very large scale integration Nanotechnology Resonant tunneling devices Diodes Hardware Design methodology

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Joule heat in point contacts

Joule heat in point contacts

引用

International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： M. Rokni Y. Levinson Department of Condensed Matter Physics Weizmann Institute of Science Rehovot Israel

We considered Joule heat in point contacts which are the elementary building blocks of ballistic devices with nonlocal transport based on two dimensional electron gas. We present a theory of a point contact up to second order in the applied voltage. Out of our calculation arises the main difference in Joule heat delivery between local and nonlocal transport. While for local transport the Joule heat is delivered in the same domains where the drop of potential happens, in the case of nonlocal transport these domains are well separated in space.

关键词： Space heating Electron mobility Current density Resistance heating Phonons physics Reservoirs Voltage control Quantization Conductivity

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Optical absorption of semiconductor quantum wells

Optical absorption of semiconductor quantum wells

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International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： M. Willander Y. Fu Department of Physics and Measurement Technology Linköping University Linkoping Sweden

The envelope function theory is discussed to derive the proper expression of the photon-electron interaction, and thus the general expression of the optical absorption coefficient, in the multiple band scheme for the fast developing long wavelength quantum well infrared photodetectors. The real n-type AlAs/AlGaAs detector is investigated to understand the effects of electrostatic fields due to doping impurities and free carriers and the finite barrier height, while the optical transitions due to inter-band mixings are principal in p-type Ge/sub x/Si/sub 1-x/ detectors.

关键词： physics Electromagnetic wave absorption Doping Detectors Conducting materials Wavelength measurement Photonics Genetic expression Quantum mechanics Impurities

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Enhancement of electron mobility in 2D MODFET structures

Enhancement of electron mobility in 2D MODFET structures

引用

International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： J. Pozela V. Juciene K. Pozela Lithuanian Branch of ICSC-World Laboratory Semiconductor Physics Institute Vilnius Lithuania

Calculations of electron-polar optical phonon scattering rates in AlAs/GaAs two-dimensional quantum wells (2D QWs) with independent electron and phonon confinement are performed. It is shown that the electron-optical phonon scattering rate can be changed by designing the heterostructure. In a single heterostructure (analogous with a 2D MODFET channel) the scattering rate decreases (hence, the mobility increases) when a phonon wall (phonon-reflecting barrier transparent to electrons) is inserted into the electron QW.

关键词： Electron mobility MODFETs HEMTs Phonons Optical scattering Electron optics Particle scattering Gallium arsenide Temperature Frequency

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Vertical transport of hot carriers in multibarrier heterostructure diode

Vertical transport of hot carriers in multibarrier heterostr...

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International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： A. Reklaitis Semiconductor Physics Institute Vilnius Lithuania

The vertical transport properties of multibarrier GaAs/AlGas hot electron heterostructure diode (HHED) are examined by Monte Carlo simulations. It is found that in addition to hot carrier tunneling and thermionic emission, the interband impact ionization plays a very important part in the electronic switching from low to high conduction, and in the formation of S-shaped negative differential conductivity (SNDC). The analysis indicates that SNDC and current instability originate predominantly due to electron tunneling and thermoemission across the heterointerface closest to cathode, and due to the subsequent impact ionization. The remaining heterointerfaces are of no importance in the diode operation under instability regime.

关键词： Hot carriers Charge carrier processes Gallium arsenide Light scattering Tunneling Electrons Ionization Semiconductor diodes Monte Carlo methods Anodes

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High performance design for InP-based strained-layer quantum well laser diodes

High performance design for InP-based strained-layer quantum...

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International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： K. Yokoyama S. Seki Opto-electronics Labs. NTT Atsugi Kanagawa Japan Nihon Denshin Denwa Kabushiki Kaisha Chiyoda-ku Tokyo JP NTT Opto-Electron. Labs. Kanagawa Japan

InP-based laser diodes (LDs) play an important role in opto-electronic integrated circuits and optical telecommunication systems. To achieve high performance characteristics, strained-layer multi-quantum well (SL-MQW) structures are commonly used. The authors believe that SL-MQW LDs are one of the useful devices among the low-dimensional devices proposed so far for actual applications. Design guidelines for these high performance devices with regard to low threshold, high-speed modulation, and high-temperature operation, are described based upon an understanding of the underlying physics.

关键词： Optical design Diode lasers High speed optical techniques Optical pumping Tensile strain physics History Carrier confinement Charge carrier processes Wire

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High-frequency characteristics of resonant tunneling diodes

High-frequency characteristics of resonant tunneling diodes

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International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： V.F. Elesin D.V. Melnikov A.I. Podlivaev Department of Physics and Technical Applications of Superconductivity Moscow State Engineering Physics Institute Technical University Moscow Russia

The current and the generation power of resonant tunneling diode versus frequency and applied dc bias voltage are determined from the numerical solution of the time-dependent Schrodinger equation. It is shown that the amplification takes place in the region which is substantially broader then the interval of the negative differential conductance, and the maximum available frequencies essentially exceed values obtained for this region. It is also shown that at various constant voltages on the heterostructure maximum efficiency will be obtained at different frequencies, and even a small deviation from the optimal frequency decreases its value sharply. Influence of impurities of various types on high-frequency characteristics of the structure is investigated. It is shown that impurities with negative potential influence on the efficiency of this device weakly, while the impurities with positive potential suppress this characteristic essentially.

关键词： Resonant tunneling devices Diodes Impurities Voltage Frequency Equations physics Oscillators Switches Admittance

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Optimization of light emitting diodes based on bipolar double-barrier resonant-tunneling structures

Optimization of light emitting diodes based on bipolar doubl...

引用

International workshop on physics and computer modeling of Devices based on Low-Dimensional Structures

作者： A. Kindlihagen K.A. Chao M. Willander J. Genoe Department of Physics and Measurement Technology University of Linköping Linkoping Sweden Department of Physics Norwegian Institute of Technology University of Trondheim Trondheim Norway High Magnetic Field Laboratory Center National de la Recherche Scientifique Grenoble France

A bipolar double-barrier resonant-tunneling light emitting diode will have maximum emitted light intensity if (1) electrons and holes simultaneously resonant-tunnel into the quantum well, (2) the charge carriers are entirely trapped in the well as the only light source, and (3) the device operates at nearly zero-field condition. We have performed a theoretical modeling, by solving selfconsistently the Schrodinger equation and the Poisson equation, to optimize such resonant-tunneling light emitting diodes with respect to the geometric structures, the chemical compositions, and the doping profiles. All physical parameters are calculated from first principle, except the electron-hole recombination rate which is treated as an input parameter. We have also optimized the device performance with respect to the temperature stability, such that the profile of the electroluminescence spectrum is insensitive to the temperature. A completely automated computer code has been constructed for such theoretical modeling of light emitting diodes.

关键词： Light emitting diodes Resonant tunneling devices Temperature Charge carrier processes Electron emission Charge carriers Electron traps Light sources Semiconductor process modeling Solid modeling

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