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European Conference on solid-state Circuits (ESSCIRC)

作者： D.G. Lomas J.V. Hatfield Department of Electrical Engineering & Electronics UMIST (University of Manchester Institute of Science and Technology) Manchester UK

This paper reports the development of a new kind of two dimensional high resolution electron imaging integrated circuit. It is used in conjunction with Microchannel Plate electron multiplier arrays for image amplification. The High-resolution Electron Detector Array IC (HEDAIC) consists of a two dimensional array of 256 × 256 nMOS charge sensing circuits, each covered by its own 20µm × 20µm aluminium electrode on the IC surface. These electrodes are used to collect the electron charge from the MCP channel outputs. The sensors are arranged and accessed in a RAM like manner, and can be configured to generate either an analogue or digital output.

关键词： Image resolution High-resolution imaging sensor arrays Electrodes Microchannel Electron multipliers Detectors MOS devices Circuits Aluminum

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development of micromachined switches with increased reliability

Development of micromachined switches with increased reliabi...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： K.M. Hiltmann B. Schmidt H. Sandmaier W. Lang Hahn Schickard Society Institute of Micro and Informationtechnology Villingen-Schwenningen Germany

By micromachining of silicon and glass, an electrical switch with low-resistance metal contacts was made. The switch is aimed at applications as a binary pressure sensor and to replace conventional push-button switches. First measurements on switches yielded electrical lifetimes over 10/sup 5/ cycles and contact resistance clearly below 1 /spl Omega/.

关键词： Switches Silicon Glass Bonding Switching circuits Surface morphology Biomembranes Contact resistance sensor systems solid state circuits

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A 4 M-pixel CMD image sensor with block and skip access capability

A 4 M-pixel CMD image sensor with block and skip access capa...

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IEEE International Conference on solid-state Circuits (ISSCC)

作者： T. Nomoto S. Hosokai T. Isokawa R. Hyuga S. Nakajima T. Terada Corporate Research Division Olympus Optical Company Limited Tatsuno Nagano Japan

A 4 M-pixel charge-modulation device (CMD) image sensor for high-resolution imaging and machine vision applications features large pixel count, three scanning modes, and low dark-current generation. The three scanning modes include a full readout mode, a block access mode and a skip access mode. A 4 M-pixel resolution image is obtained in a single readout cycle with the full readout mode, while an arbitrary window-of-interest can be read out with the block access mode. The skip access mode reads every 4 pixels in both horizontal and vertical directions. The block and the skip access modes allow a real-time monitoring of a partial and a whole image.

关键词： Image sensors Clocks Shift registers Inverters Pixel Switches sensor arrays Switching circuits Digital cameras Dark current

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Micro-actuators employing acoustic streaming caused by high-frequency ultrasonic waves

Micro-actuators employing acoustic streaming caused by high-...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： K. Hashimoto K. Ikekame M. Yamaguchi Department of Electrical and Electronics Engineering Chiba University Inage Chiba Japan

This paper proposes the application of acoustic streaming to the development of micro-actuators, such as micro-manipulators for small particles and micro-pumps for liquid. Since high-frequency ultrasonic waves induce acoustic streaming very efficiently only in the vicinity of the transducer, micro-manipulators are realised by using a two-dimensional ultrasonic transducer array and controlling the electrical power supplied to each transducer. It is also concluded that micro-pumps can be developed by combining a transducer array with a topographic channel structure for liquid flow.

关键词： Microactuators Ultrasonic transducers Acoustic transducers Micropumps Ultrasonic transducer arrays Acoustic applications Acoustic waves Acoustic arrays Power supplies Fluid flow

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A 3-V 0.5-/spl mu/m CMOS A/D audio processor for a microphone array

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IEEE Journal of solid-state Circuits 1997年第7期32卷 1122-1126页

作者： F. Balestro V. Fraisse G. Martel D. Morche P. Senn G. Le Tourneur Y. Mahieux France Telecom CNET Meylan France France Telecom CNET Lannion France

A 0.5-/spl mu/m 3-V CMOS mixed-mode audio processor is presented. It is mainly composed of 11 low-noise input channels and a dedicated digital audio processor. Analog input signals are provided through an 11-microphone array. The chip size is about 50 mm/sup 2/, and the power dissipation is less than 100 mW. This circuit is dedicated to multimedia applications.

关键词： Microphone arrays CMOS process Frequency Finite impulse response filter Transfer functions sensor phenomena and characterization

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Neural networks for the design and fabrication of integrated circuits for aerospace applications

Neural networks for the design and fabrication of integrated...

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IEEE Conference on Aerospace

作者： G.L. Creech Electron Devices Division Wright Laboratories OH USA

A great effort has been underway in recent years to develop microwave and millimeter wave monolithic integrated circuit (MIMIC) technology for phased array radar systems for airborne and space based applications. solid-state MIMICs have made a dramatic impact on capability, reliability, and cost of these sensor systems. However, the computer-aided engineering (CAE) tools necessary for the modeling and simulation of such complex systems has not kept pace. This paper presents a methodology for the utilization of neurocomputing technology to achieve enhanced yield and efficient yield prediction in integrated circuit (IC) manufacturing. Specifically, artificial neural networks (ANNs) are employed to model complex relationships between material and device characteristics at critical stages of the semiconductor fabrication process. Additionally, a methodology for the development of ANN models of MIMIC passive elements based on the elements physical parameters is described. Results are presented which illustrate that a ANN can predict the equivalent circuit parameters (ECPs) and/or the scattering-parameters of these passive elements to nearly the same degree of accuracy as that afforded by electromagnetic (EM) simulation.

关键词： Neural networks Fabrication MIMICs Space technology Artificial neural networks Millimeter wave technology Millimeter wave radar Integrated circuit technology Phased arrays Spaceborne radar

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Magnetoresistance effect of InAs quantum well structure grown on GaAs substrates by molecular beam epitaxy

Magnetoresistance effect of InAs quantum well structure grow...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： T. Yoshida A. Okamoto S. Muramatsu N. Kuze I. Shibasaki Electronic Devices Research & Development Department Asahikasei Electronics Company Limited Fuji Shizuoka Japan Corporate Research & Development Administration Asahi Chemical Industry Company Limited Fuji Shizuoka Japan

We have developed a new type of semiconductor magnetoresistance sensor. InAs deep quantum well structures (InAs DQWs) were grown on a GaAs substrate with AlGaAsSb insulating layers by molecular beam epitaxy (MBE). The magnetoresistance effect of these InAs DQWs has been measured for the first time. The large magnetoresistance and geometrical effect of a InAs DQWs MR element have been observed. The InAs DQWs MR sensor is promising for future magnetic sensor applications, such as those in automobiles.

关键词： Magnetoresistance Gallium arsenide Substrates Magnetic sensors Molecular beam epitaxial growth Electron mobility Insulation Transistors Electrodes Thin film sensors

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An integrated resonant accelerometer microsystem for automotive applications

An integrated resonant accelerometer microsystem for automot...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： P. Ohlckers R. Holm H. Jakobsen T. Kvisteroy G. Kittilsl M. Nese S.M. Nilsen A. Ferber SensoNor ASA Horten Norway SINTEF Electronics and Cybernetics Oslo Norway

In the project "IRMA-EU" (IRMA: Integrated Resonant Accelerometer Microsystem for Automotive applications), a project sponsored by the European Commision under ESPRIT, SensoNor and project partners Autoliv and SINTEF are developing a resonant structure two-chip accelerometer silicon microsystem for automotive applications, the SA30: Crash sensor for front impacts, with range /spl plusmn/50 g. The project is focusing on the development of key process technologies, product designs and manufacture of functional prototypes. The IRMA project is coordinated with other activities performed by the partners to cover all aspects of research and technology development as well establishment of high volume production capabilities needed for successful product innovation of this new generation of crash sensors. The sensing principle is an acceleration sensitive resonant structure, with an ASIC for resonance control and signal conditioning. Prototypes in silicon of both the sensor chip and the ASIC chip have confirmed the feasibility of the concept, and ramp up to high volume production has now started.

关键词： Resonance Accelerometers Automotive engineering Automotive applications Silicon Prototypes Production Application specific integrated circuits Vehicle crash testing Product design

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CdZnTe solid-state gamma camera

CdZnTe solid-state gamma camera

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： J.F. Butler C.L. Lingren S.J. Friesenhahn F.P. Doty W.L. Ashburn R.L. Conwell F.L. Augustine B. Apotovsky B. Pi T. Collins S. Zhao C. Isaacson Digital Equipment Corporation San Diego CA USA

We report the development of a CdZnTe gamma ray imager whose advantages over the conventional Anger camera include: 1) improved contrast and spatial resolution resulting from superior energy resolution and unambiguous position determination and 2) the small size and weight and high reliability inherent in an all-solid-state construction. It provides high energy resolution and peak efficiency by incorporating Digirad's new SpectrumPlus/sup TM/ detector technology. The new imager employs a modular design, in which each 1"/spl times/1" module incorporates a monolithic 64-element CdZnTe detector array and ASIC-based circuitry that provides signal conditioning for every channel, identification of valid events and addressing functions. Imagers with a wide range of sizes and shapes can be assembled by timing modules together on a specially designed signal routing board.

关键词： solid state circuits Cameras Energy resolution Detectors Signal design Spatial resolution Event detection sensor arrays Signal processing Shape

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Deep level spectroscopy in high-power laser diode arrays

Deep level spectroscopy in high-power laser diode arrays

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IEEE Photonics Conference (IPC)

作者： J.W. Tomm A. Jaeger A. Barwolf T. Elsaesser J. Bollmann W.T. Masselink A. Gerhardt J. Donecker Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie Berlin Germany Humboldt-Universität zu Berlin Berlin Germany Institut für Kristallzüchtung Berlin Berlin Germany

High-power laser diode arrays (LDA) are of utmost importance for a number of applications such as for pumping solid state lasers, laser frequency conversion, material processing and printing. For these applications device operation conditions include heavy thermal load, resulting in aging processes which limit lifetime and reliability. In order to overcome these limits microscopic insight into the aging processes is needed. Device aging is well-known to be accompanied by deep level creation, however, the mechanism trough in which specific deep levels are associated with a failure event must be separately proved for each device design. Thus analytical work and the development of new analytical techniques are required. Here we introduce Fourier-transform photo-current (FTPC) spectroscopy as a new method for the spectroscopy of deep levels in devices, e.g. for monitoring changes in the deep level concentration within the optically active layer. The basic idea of this technique is to measure the spectral sensitivity of the LDA for front facet illumination by the light coming from a FT spectrometer. The electrical signal generated within the LDA is taken from the power supply contacts of the device and is fed into the signal input port of the spectrometer. We find that the spectra obtained in this way are extremely sensitive to the aging processes and in particular to the increase of deep level contributions.

关键词： Spectroscopy Diode lasers Optical arrays Semiconductor laser arrays Aging Linear discriminant analysis solid lasers Frequency conversion Laser excitation Pump lasers

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